Matches 1 - 50 out of 241 1 2 3 4 5 >
Match Document Document Title
7618901 Process for growing a dielectric layer on a silicon-containing surface using a mixture of N2O and O3  
This invention is embodied in an improved process for growing high-quality silicon dioxide layers on silicon by subjecting it to a gaseous mixture of nitrous oxide (N 2 O) and ozone (O 3 ). The...
7618891 Method for forming self-aligned metal silicide contacts  
The present invention relates to a method for forming self-aligned metal silicide contacts over at least two silicon-containing semiconductor regions that are spaced apart from each other by an...
7585729 Method of manufacturing a non-volatile memory device  
A method of manufacturing a non-volatile memory device, includes forming a tunnel isolation layer comprising an oxynitride on a substrate by a simultaneous oxidation and nitridation treatment in...
7563726 Semiconductor device with multiple gate dielectric layers and method for fabricating the same  
Disclosed are a semiconductor device with dual gate dielectric layers and a method for fabricating the same. The semiconductor device includes: a silicon substrate divided into a cell region where...
7557030 Method for fabricating a recess gate in a semiconductor device  
A method for fabricating a recess gate in a semiconductor device is provided. The method includes selectively etching an active region of a substrate to form a recess pattern, performing a post...
7550353 Method of forming semiconductor device  
One embodiment of a method for forming a semiconductor device can include forming a gate pattern on a semiconductor substrate and performing a selective re-oxidation process on the gate pattern in...
7547643 Techniques promoting adhesion of porous low K film to underlying barrier layer  
Adhesion of a porous low K film to an underlying barrier layer is improved by forming an intermediate layer lower in carbon content, and richer in silicon oxide, than the overlying porous low K...
7541295 Method of manufacturing semiconductor device  
A method of manufacturing a semiconductor device according to one aspect of the present invention comprises: forming a gate insulation film on a semiconductor substrate in which element separation...
7541246 Method of manufacturing semiconductor device  
A gate insulating film and a gate electrode are formed on a silicon substrate. The gate insulating film contains at least hafnium, oxygen, fluorine, and nitrogen. The fluorine concentration is high...
7534729 Modification of semiconductor surfaces in a liquid  
Compositions and methods are provided herein that include modifications to at least one surface of a silicon-based semiconductor material. Modifications occur in a liquid and comprise alterations...
7531427 Thermal oxidation of a SiGe layer and applications thereof  
The invention concerns a method for oxidizing a surface region of a SiGe layer that includes an oxidizing thermal treatment of the SiGe layer for oxidizing the surface region. The method includes...
7521375 Method of forming an oxinitride layer  
In methods of forming an oxide layer and an oxynitride layer, a substrate is loaded into a reaction chamber having a first pressure and a first temperature. The oxide layer is formed on the...
7521325 Semiconductor device and method for fabricating the same  
A permeation preventing film of a silicon nitride film 16 is inserted between a silicon substrate 10 and a High-k gate insulation film 18 to thereby prevent the High-k gate insulation film ...
7501352 Method and system for forming an oxynitride layer  
The present invention generally provides a method for preparing an oxynitride film on a substrate. A surface of the substrate is exposed to oxygen radicals formed by ultraviolet (UV) radiation...
7476627 Surface preparation prior to deposition  
Methods are provided herein for treating substrate surfaces in preparation for subsequent nucleation-sensitive depositions (e.g., polysilicon or poly-SiGe) and adsorption-driven deposition (e.g....
7470583 Method of improved high K dielectric-polysilicon interface for CMOS devices  
Methods for forming dielectric layers over polysilicon substrates, useful in the construction of capacitors and other semiconductor circuit components are provided. A self-limiting nitric oxide...
7459390 Method for forming ultra thin low leakage multi gate devices  
The present invention provides a method for manufacturing a semiconductor device having multiple gate dielectric thickness layers. The method, in one embodiment, includes forming a first layer of...
7432216 Semiconductor device and manufacturing method thereof  
The technique capable of reducing the power consumption in the MISFET by suppressing the scattering of the carriers due to the fixed charges is provided. A silicon oxynitride film with a physical...
7429540 Silicon oxynitride gate dielectric formation using multiple annealing steps  
A method for processing a semiconductor substrate in a chamber includes forming a silicon oxynitride film using a two-step anneal process. The first anneal step includes annealing the silicon...
7429539 Nitriding method of gate oxide film  
A substrate processing method comprises the step of forming an oxide film on a silicon substrate surface, and introducing nitrogen atoms into the oxide film by exposing the oxide film to nitrogen...
7429538 Manufacturing method for two-step post nitridation annealing of plasma nitrided gate dielectric  
A method of forming a silicon oxynitride gate dielectric. The method includes incorporating nitrogen into a dielectric film using a plasma nitridation process to form a silicon oxynitride film. The...
7429369 Silicon nanoparticle nanotubes and method for making the same  
A relatively thick electrode is positioned opposite the surface of a substrate/second electrode. The electrode and the substrate surface are both contacted by a solution including silicon...
7420202 Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device  
An electronic device can include a transistor structure of a first conductivity type, a field isolation region, and a layer of a first stress type overlying the field isolation region. For example,...
7410911 Method for stabilizing high pressure oxidation of a semiconductor device  
A method and apparatus for preventing N 2 O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus...
7402472 Method of making a nitrided gate dielectric  
A gate dielectric is treated with a nitridation step and an anneal. After this, an additional nitridation step and anneal is performed. The second nitridation and anneal results in an improvement...
7396776 Semiconductor-on-insulator (SOI) structures including gradient nitrided buried oxide (BOX)  
A semiconductor-on-insulator structure includes a buried dielectric layer interposed between a base semiconductor substrate and a surface semiconductor layer. The buried dielectric layer comprises...
7387972 Reducing nitrogen concentration with in-situ steam generation  
In-situ steam generation (ISSG) is used to reduce the nitrogen concentration in silicon and silicon oxide areas.
7384880 Method for making a semiconductor device having a high-k gate dielectric  
A method for making a semiconductor device is described. That method comprises converting a hydrophobic surface of a substrate into a hydrophilic surface, and forming a high-k gate dielectric layer...
7378358 Method for forming insulating film on substrate, method for manufacturing semiconductor device and substrate-processing apparatus  
A substrate-processing apparatus ( 100, 40 ) comprises a radical-forming unit ( 26 ) for forming the nitrogen radicals and oxygen radicals through a high-frequency plasma, a processing vessel ( 21...
7378319 Method of forming double gate dielectric layers and semiconductor device having the same  
A method of forming double gate dielectric layers composed of an underlying oxide layer and an overlying oxy-nitride layer is provided to prevent degradation of gate dielectric properties due to...
7361613 Semiconductor device, manufacture and evaluation methods for semiconductor device, and process condition evaluation method  
A gate insulating film made of silicon oxynitride is disposed on the partial surface area of a semiconductor substrate. A gate electrode is disposed on the gate insulating film. Source and drain...
7358595 Method for manufacturing MOS transistor  
Disclosed is a method for fabricating a MOS transistor. The present method includes forming a buffer layer pattern including nitrogen on the semiconductor substrate; forming a gate insulating layer...
7358198 Semiconductor device and method for fabricating same  
A method is provided with: arranging nitrogen atoms on a surface of a silicon substrate; performing a heat treatment in a hydrogen atmosphere so that the nitrogen atoms and silicon atoms...
7358171 Method to chemically remove metal impurities from polycide gate sidewalls  
An embodiment includes a process of forming a gate stack that acts to resist the redeposition to the semiconductive substrate of mobilized metal such as from a metal gate electrode. An embodiment...
7335606 Silicide formed from ternary metal alloy films  
A NiSi layer over silicon that is thermally stable and can form even in the presence of oxides. The method of fabricating the nickel silicide layer includes providing a substrate comprising...
7304002 Method of oxidizing member to be treated  
A method for oxidation of an object to be processed is provided wherein an oxide film can provide favorable film quality and a laminate structure of nitride film and oxide film can be obtained by a...
7294553 Plasma-enhanced chemical vapour deposition process for depositing silicon nitride or silicon oxynitride, process for producing one such layer arrangement, and layer arrangement  
A plasma-enhanced chemical vapor deposition process for depositing relatively high dielectric constant silicon nitride or oxynitride to form an MIM capacitor is described. The flow rate ratios for...
7282457 Apparatus for stabilizing high pressure oxidation of a semiconductor device  
A method and apparatus for preventing N 2 O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace is disclosed. The method and apparatus...
7250375 Substrate processing method and material for electronic device  
A method of processing a for an electronic device, comprising, at least: a nitridation step (a) of supplying nitrogen radicals on the surface of the electronic device substrate, to thereby form a...
7235502 Transitional dielectric layer to improve reliability and performance of high dielectric constant transistors  
A gate dielectric structure ( 201 ) fabrication process includes forming a transitional dielectric film ( 205 ) overlying a silicon oxide film ( 204 ). A high dielectric constant film ( 206 ) is...
7232772 Substrate processing method  
A substrate processing method comprises the step of forming an oxide film on a silicon substrate surface, and introducing nitrogen atoms into the oxide film by exposing the oxide film to nitrogen...
7192887 Semiconductor device with nitrogen in oxide film on semiconductor substrate and method of manufacturing the same  
A method of manufacturing a MOS transistor is provided that achieves high-speed devices by reducing nitrogen diffusion to a silicon substrate interface due to redistribution of nitrogen and further...
7189661 Method of forming silicon oxynitride layer in semiconductor device and apparatus of forming the same  
There are provided a method and an apparatus of forming an insulating layer including silicon oxynitride. The method includes performing a plasma treatment process for supplying a plasma reaction...
7183143 Method for forming nitrided tunnel oxide layer  
A method for forming a nitrided tunnel oxide layer is described. A silicon oxide layer as a tunnel oxide layer is formed on a semiconductor substrate, and a plasma nitridation process is performed...
7166519 Method for isolating semiconductor devices with use of shallow trench isolation method  
The present invention relates to a method for isolating semiconductor devices. The method includes the steps of: forming a patterned pad nitride layer pattern to open at least one isolation region...
7157360 Memory device and method for forming a passivation layer thereon  
A memory device with an improved passivation structure. The memory device includes a semiconductor substrate with memory units thereon, an interconnect structure over the surface of the...
7135417 Method of forming a semiconductor device  
In the formation of semiconductor devices, a processing method is provided, including steps for forming an oxide layer. The embodied methods involve a series of oxidation steps, with optional...
7129187 Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films  
A method for low-temperature plasma-enhanced chemical vapor deposition of a silicon-nitrogen-containing film on a substrate. The method includes providing a substrate in a process chamber, exciting...
7129128 Method of improved high K dielectric-polysilicon interface for CMOS devices  
Methods for forming dielectric layers over polysilicon substrates, useful in the construction of capacitors and other semiconductor circuit components are provided. A self-limiting nitric oxide...
7125811 Oxidation method for semiconductor process  
An oxidation method for a semiconductor process, which oxidizes a surface of a target substrate, includes heating a process container that accommodates the target substrate, and supplying hydrogen...
Matches 1 - 50 out of 241 1 2 3 4 5 >