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7407893 Liquid precursors for the CVD deposition of amorphous carbon films  
Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including positioning the substrate in a processing...
7358162 Method of manufacturing semiconductor device  
A method of manufacturing a semiconductor device, includes the steps of: raising a temperature of a sapphire substrate which is included in the semiconductor device from a room temperature to a...
7338828 Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD)  
A method of growing planar non-polar m-plane III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such...
7327036 Method for depositing a group III-nitride material on a silicon substrate and device therefor  
The present invention is related to a device comprising a substrate comprising a silicon substrate having a porous top layer, a second layer on said top layer, said second layer made of a material...
7312156 Method and apparatus for supporting a semiconductor wafer during processing  
A semiconductor wafer is processed while being supported without mechanical contact. Instead, the wafer is supported by gas streams emanating from a large number of passages in side sections...
7309660 Buffer layer for selective SiGe growth for uniform nucleation  
Methods for preparing a surface for selective silicon-germanium epitaxy by forming a thin silicon (Si) buffer layer or a thin, low concentration SiGe buffer layer for uniform nucleation, are...
7294520 Method for fabricating a plurality of semiconductor bodies, and electronic semiconductor body  
A method for fabricating a plurality of semiconductor bodies, in particular based on nitride compound semiconductor material. The method includes forming a mask layer ( 3 ) over a substrate ( 1 )...
7285500 Thin films and methods of making them  
Thin, smooth silicon-containing films are prepared by deposition methods that utilize a silicon containing precursor. In preferred embodiments, the methods result in Si-containing films that are...
7259108 Methods for fabricating strained layers on semiconductor substrates  
Methods for fabricating multi-layer semiconductor structures including strained material layers using a minimum number of process tools and under conditions optimized for each layer. Certain...
7189639 Use of germanium dioxide and/or alloys of GeO2 with silicon dioxide for semiconductor dielectric applications  
A method is disclosed for depositing a dielectric film on a substrate having a plurality of gaps formed between adjacent raised surfaces disposed in a high density plasma substrate processing...
7186663 High density plasma process for silicon thin films  
A method is provided for forming a Si and Si—Ge thin films. The method comprises: providing a low temperature substrate material of plastic or glass; supplying an atmosphere; performing a...
7176146 Method of making a molecule-surface interface  
This invention is generally related to a method of making a molecule-surface interface comprising at least one surface comprising at least one material and at least one organic group wherein the...
7157379 Strained semiconductor structures  
A method for in situ formation of low defect, strained silicon and a device formed according to the method are disclosed. In one embodiment, a silicon germanium layer is formed on a substrate, and...
7144747 Method for thermally treating a substrate that comprises several layers  
A method of thermally treating a substrate that has multiple layers is provided. A substrate layer that is covered on opposite sides is oxidized from side edges thereof toward a center thereof such...
7135416 Method of manufacturing semiconductor device  
A method of manufacturing a semiconductor device including a gallium nitride related semiconductor. The method include preparing a substrate having surface of a gallium nitride related...
7132372 Method for preparing a semiconductor substrate surface for semiconductor device fabrication  
A method for preparing a semiconductor substrate surface ( 28 ) for semiconductor device fabrication, includes providing a semiconductor substrate ( 20 ) having a pure Ge surface layer ( 28 ) or a...
7078300 Thin germanium oxynitride gate dielectric for germanium-based devices  
A method for producing thin, below 6 nm of equivalent oxide thickness, germanium oxynitride layer on Ge-based materials for use as gate dielectric is disclosed. The method involves a two step...
7067401 Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby  
Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD...
7060632 Methods for fabricating strained layers on semiconductor substrates  
Methods for fabricating multi-layer semiconductor structures including strained material layers using a minimum number of process tools and under conditions optimized for each layer. Certain...
7060620 Method of preparing a surface of a semiconductor wafer to make it epiready  
The invention concerns a method of preparing the surface of a semiconductor wafer intended for microelectronics and/or optoelectronics applications. In particular, a method of preparing a SiC...
7041530 Method of production of nano particle dispersed composite material  
A method of the production of a nanoparticle dispersed composite material capable of controlling a particle size and a three dimensional arrangement of the nanoparticles is provided. The method of...
7001849 Surface treatment and protection method for cadmium zinc telluride crystals  
A method for treatment of the surface of a CdZnTe (CZT) crystal that provides a native dielectric coating to reduce surface leakage currents and thereby, improve the resolution of instruments...
6987073 Low selectivity deposition methods  
A deposition method includes forming a nucleation layer over a substrate, forming a layer of a first substance at least one monolayer thick chemisorbed on the nucleation layer, and forming a layer...
6933244 Method of fabrication for III-V semiconductor surface passivation  
A method passivates a surface of a semiconductor structure. The method provides III-V semiconductor material having a surface to be passivated. Upon the surface of the III-V semiconductor material...
6921726 Growing smooth semiconductor layers  
A method includes epitaxially growing a semiconductor layer with a free surface and performing an anneal that reduces atomic roughness on the free surface. The free surface has an orientation with...
6855641 CMOS transistor having different PMOS and NMOS gate electrode structures and method of fabrication thereof  
In a CMOS semiconductor device using a silicon germanium gate and a method of fabricating the same, a gate insulating layer, a conductive electrode layer that is a seed layer, a silicon germanium...
6841436 Method of fabricating SiC semiconductor device  
In a method of fabricating a SiC semiconductor device, a surface of a SiC layer ( 5, 48, 102 ) is processed into a cleaned surface terminated at Si. An oxide film ( 7, 49, 105 ) is formed on the...
6833328 Method for removing a coating from a substrate, and related compositions  
A method for selectively removing one or more coatings from the surface of a substrate is described. The coating is treated with an aqueous composition which includes an acid of the formula H x AF...
6815323 Ohmic contacts on n-type silicon carbide using carbon films  
Ohmic contact formation inclusive of Carbon films on 4H and 6H n-type Silicon Carbide is disclosed. Contact formation includes an initial RF sputtering to produce an amorphous Carbon film with the...
6797643 Plasma enhanced CVD low k carbon-doped silicon oxide film deposition using VHF-RF power  
A method of depositing a low dielectric constant film on a substrate. In one embodiment, the method includes the steps of positioning the substrate in a deposition chamber, providing a gas mixture...
6706542 Application of InAIAs double-layer to block dopant out-diffusion in III-V device Fabrication  
The present invention relates to a multi-layer dopant barrier and its method of fabrication for use in semiconductor structures. In an illustrative embodiment, the multi-layer dopant barrier is...
6703293 Implantation at elevated temperatures for amorphization re-crystallization of Si1-xGex films on silicon substrates  
A method of fabricating a Si 1−X Ge X film on a silicon substrate includes preparing a silicon substrate; epitaxially depositing a Si 1−X Ge X layer on the silicon substrate forming a Si...
6624078 Methods for analyzing the effectiveness of wafer backside cleaning  
A method for using a monitor substrate to determine effectiveness of a cleaning operation is provided. The method includes selecting a substrate from a lot of substrates and inspecting a surface of...
6620665 Method for fabricating semiconductor device  
A process control is performed for fabricating both a wafer for a device including a Ge-containing semiconductor film and a wafer for a device, for example, including no Ge-containing semiconductor...
6613695 Surface preparation prior to deposition  
Methods are provided herein for treating substrate surfaces in preparation for subsequent nucleation-sensitive depositions (e.g., polysilicon or poly-SiGe) and adsorption-driven deposition (e.g....
6610612 Method of efficient controllable and repeatable wet oxidation in a phosphorous-rich III-V material system  
A method of selectively oxidizing III-V semiconductor material is provided. There is provided a III-V semiconductor system comprising a short-period super lattice (SSL) of N periods of alternating...
6593193 Semiconductor device and method for fabricating the same  
An insulating-gate semiconductor device has a first nitride semiconductor layer formed over a substrate and an insulating oxidation layer obtained by oxidizing a second nitride semiconductor layer...
6566277 Liquid-phase growth method, liquid-phase growth apparatus, and solar cell  
The present invention provides a method for producing a semiconductor substrate which comprises the steps of growing a first semiconductor layer on a substrate in liquid phase at a properly...
6566162 Method of producing Cu (In, Ga) (Se, S) 2 semiconductor film  
A method of producing a semiconductor film of Cu(M III )(M VI ) 2 wherein M III represents In 1-x Ga x where x is between 0 and 1 and M VI represents Se y S 1-y where y is between 0.5 and 1,...
6563166 Flash cell device  
A memory device includes a first memory cell and a second memory cell both controlled by a common control gate. The device includes: a substrate; first and second stacks each including an...
6563144 Process for growing epitaxial gallium nitride and composite wafers  
A novel growth procedure to grow epitaxial Group III metal nitride thin films on lattice-mismatched substrates is proposed. Demonstrated are the quality improvement of epitaxial GaN layers using a...
6531414 Method of oxidizing strain-compensated superlattice of group III-V semiconductor  
A method of forming a native oxide from at least one strain-compensated superlattice of Group III-V semiconductor material, where each at least one superlattice includes two monolayers of a Group...
6524969 High density plasma chemical vapor deposition (HDP-CVD) processing of gallium arsenide wafers  
Method for processing gallium arsenide (GaAs) wafers is provided. One embodiment of the invention provides a method for processing a substrate comprising disposing the substrate on a substrate...
6498050 Bipolar transistor, semiconductor light emitting device and semiconductor device  
In a GaAs type semiconductor device, In p Ga 1−p N (0<p≦1) is used to thereby form heterojunction having a large difference in energy gap, thereby providing a high performance semiconductor...
6479312 Gallium phosphide luminescent device  
By providing a nitrogen-doped low carrier concentration layer 13 having both of a donor concentration and an acceptor concentration controlled below 1×10 16 /cm 3 at a p-n junction portion...
6464780 Method for the production of a monocrystalline layer on a substrate with a non-adapted lattice and component containing one or several such layers  
The invention relates to a method for the production of a monocrystalline layer on a substrate with a non-adapted lattice. To this end, a monocrystalline substrate with a buried amply defective...
6451711 Epitaxial wafer apparatus  
A system for coating the surface of compound semiconductor wafers includes providing a single-wafer epitaxial production system in a cluster-tool architecture with a loading, storage, and transfer...
6380101 Method of forming patterned indium zinc oxide and indium tin oxide films via microcontact printing and uses thereof  
Microcontact printing to pattern a self-assembled monolayer (SAM) of an alkanephosphonic acid on a film of indium zinc oxide (IZO). The SAM is robust enough to protect the undelying IZO from wet...
6346481 Method of reducing pitting of a coated heater  
Provided herein is a method of depositing a film on a substrate in a high temperature chemical vapor deposition (CVD) reactor, comprising the steps of polishing sharp corner(s) of the surface of a...
6319566 Method of molecular-scale pattern imprinting at surfaces  
A method for mask-free molecular or atomic patterning of surfaces of reactive solids is disclosed. A molecular-scale pattern of adsorbate molecules is used in place of the conventional macroscopic...
Matches 1 - 50 out of 143 1 2 3 >