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7569496 Method for manufacturing SiC semiconductor device  
A method for manufacturing a SiC semiconductor device includes: forming an impurity layer in a SiC layer; and forming an oxide film on the SiC layer. The forming the impurity layer includes:...
7566482 SOI by oxidation of porous silicon  
A method in which a SOI substrate structure is fabricated by oxidation of graded porous Si is provided. The graded porous Si is formed by first implanting a dopant (p- or n-type) into a...
7550369 Method for fabricating low-defect-density changed orientation Si  
The present invention provides a method for forming low-defect density changed-orientation Si by amorphization/templated recrystallization (ATR) processes in which regions of Si having a first...
7531438 Method of fabricating a recess channel transistor  
A method of fabricating a recess channel transistor is provided. First, a hard mask is formed on a doped-semiconductor layer and a substrate. The doped-semiconductor layer and the substrate are...
7528056 Low-cost strained SOI substrate for high-performance CMOS technology  
A cost-effective and simple method of fabricating strained semiconductor-on-insulator (SSOI) structures which avoids epitaxial growth and subsequent wafer bonding processing steps is provided. In...
7524744 Method of producing SOI wafer and SOI wafer  
The present invention provides a method of producing an SOI wafer, comprising at least steps of forming an oxygen ion-implanted layer by implanting oxygen ions into a silicon wafer from one main...
7485538 High performance SiGe HBT with arsenic atomic layer doping  
A base structure for high performance Silicon Germanium (SiGe) based heterojunction bipolar transistors (HBTs) with arsenic atomic layer doping (ALD) is disclosed. The ALD process subjects the base...
7465478 Plasma immersion ion implantation process  
A method of processing a workpiece includes placing the workpiece on a workpiece support pedestal in a main chamber with a gas distribution showerhead, introducing a process gas into a remote...
7452826 Oxidation method and oxidation system  
An oxidation method is capable of forming oxide films in an improved interfilm thickness uniformity. The oxidation method includes the steps of supplying an oxidizing gas and a reducing gas into a...
7429514 Use of selective oxidation to form asymmetrical oxide features during the manufacture of a semiconductor device  
A sidewall oxidation process for use during the formation of a transistor such as a flash memory cell allows for improved control of a gate oxide profile. The method comprises doping transistor...
7419917 Ion implanted microscale and nanoscale device method  
A method is used for producing nanoscale and microscale devices in a variety of materials, such as silicon dioxide patterned buried films. The method is inexpensive and reliable for making small...
7413996 High k gate insulator removal  
A method of forming a high k gate insulation layer in an integrated circuit on a substrate. A high k layer is deposited onto the substrate, and patterned with a mask to define the high k gate...
7384857 Method to fabricate completely isolated silicon regions  
The construction of Shallow Trench Isolation, STI, regions is integrated in to a SIMOX fabrication process for a Silicon On Insulator, SOI, wafer. Prior to the beginning of the SOI process, a...
7371648 Method for manufacturing a transistor device having an improved breakdown voltage and a method for manufacturing an integrated circuit using the same  
The present invention provides a method for manufacturing a transistor device, and a method for manufacturing an integrated circuit including the same. The method for manufacturing the transistor...
7348283 Mechanically robust dielectric film and stack  
A method for forming a mechanically robust dielectric film comprises depositing a dielectric film on a substrate and then inducing a compressive strain in a top surface of the dielectric film to...
7348186 Method for improving a semiconductor substrate having SiGe film and semiconductor device manufactured by using this method  
A method of improving a semiconductor substrate including a SiGe film on a Si or SOI substrate is provided. The method includes determining a relationship between a film condition of the SiGe film...
7332443 Method for fabricating a semiconductor device  
The present invention relates to a method for fabricating a semiconductor device. In order to provide for a high carrier mobility in an active region of the device, germanium atoms are implanted...
7309646 De-fluoridation process  
A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist...
7306965 Oxygen ion conductor device, method for fabricating oxygen ion conductor device, and oxygen concentration control system  
A first electrode thin film is formed on an upper surface of the oxygen ion conductive thin film so as to have a through hole. A resistor is formed on part of the upper surface of the oxygen...
7291566 Barrier layer for a processing element and a method of forming the same  
In order to mitigate erosion of exposed processing elements in a processing system by the process and any subsequent contamination of the substrate in the processing system, processing elements...
7285495 Methods for thermally treating a semiconductor layer  
A method for thermally treating a semiconductor layer is described. An embodiment of the technique includes implanting atomic species into a first surface of a donor wafer to form a zone of...
7285452 Method to selectively form regions having differing properties and structure  
A semiconductor device is formed having two physically separate regions with differing properties such as different surface orientation, crystal rotation, strain or composition. In one form a first...
7282449 Thermal treatment of a semiconductor layer  
A method for thermally treating a silicon germanium semiconductor layer from a donor wafer is described. An embodiment of the technique includes co-implanting atomic species into a first surface of...
7253120 Selectable area laser assisted processing of substrates  
A system and method for selectable area laser treatment of a substrate, such as thin film transistors, the system including a holder holding a substrate in proximity to reactant, and laser beams...
7241702 Processing method for annealing and doping a semiconductor  
A treatment method of annealing and doping a semiconductor including irradiating a semiconductor layer ( 13 ) formed on a substrate ( 11 ) with a laser beam (a), thereby melting at least a part of...
7217667 Processes for forming electronic devices including a semiconductor layer  
An impurity can be introduced into a semiconductor layer of a workpiece to affect the oxidation and the relative concentration of one element with respect to another element within the...
7199063 Process for passivating polysilicon and process for fabricating polysilicon thin film transistor  
A process for passivating polysilicon and a process for fabricating a polysilicon thin film transistor. A polysilicon layer is formed. Next, high-pressure annealing is performed using a...
RE39484 Process for the production of thin semiconductor material films  
Process for the preparation of thin monocrystalline or polycrystalline semiconductor material films, characterized in that it comprises subjecting a semiconductor material wafer having a planar...
7144820 Method of manufacturing a layer sequence and a method of manufacturing an integrated circuit  
A method of manufacturing a layer sequence having a first and a second laterally confined structure comprises the steps of providing a first layer on a first surface portion of a substrate, which...
7144746 Method for monitoring implantation depth of impurity  
The present invention provides a method for measuring an implantation depth of an impurity injected into a wafer by an ion implantation device, using a measurement device and monitoring whether the...
7129186 Oxidation method and oxidation system  
An oxidation method is capable of forming oxide films in an improved interfilm thickness uniformity. The oxidation method includes the steps of supplying an oxidizing gas and a reducing gas into a...
7125811 Oxidation method for semiconductor process  
An oxidation method for a semiconductor process, which oxidizes a surface of a target substrate, includes heating a process container that accommodates the target substrate, and supplying hydrogen...
7105427 Method for shallow dopant distribution  
Vacancies and dopant ions are introduced near the surface of a semiconductor wafer. The dopant ions which diffuse by an interstitialcy mechanism have diffusivity greatly reduced, which leads to a...
7067410 Method of forming a metal silicide  
The present invention provides a technique for forming a metal silicide, such as a cobalt disilicide, even at extremely scaled device dimensions without unduly degrading the film integrity of the...
7060558 Method for fabricating a field-effect transistor having a floating gate  
In the course of a method for fabricating a field-effect transistor having a floating gate, a structure is formed which has uncovered sidewalls of a layer made of the material for forming the...
7056841 Method for fabricating semiconductor device  
A method for fabricating a semiconductor device for reducing coupling noise resulting from high integration of devices, comprises the steps of forming a plurality of metal wiring leads spaced from...
7052981 Ion implantation method  
Disclosed is an ion implantation method capable of preventing a channeling phenomenon caused by a lattice structure of a semiconductor substrate. The ion implantation method includes the steps of...
7041530 Method of production of nano particle dispersed composite material  
A method of the production of a nanoparticle dispersed composite material capable of controlling a particle size and a three dimensional arrangement of the nanoparticles is provided. The method of...
7029939 P-type semiconductor manufacturing method and semiconductor device  
A p-GaN layer 5 comprising materials such as a Group III nitride compound semiconductor is formed on a sapphire substrate 1 through MOVPE treatment, and a first metal layer 6 made of Co/Au is...
7001852 Method of making a high quality thin dielectric layer  
A method of making a high quality thin dielectric layer includes annealing a substrate and a base oxide layer overlying a top surface of the substrate at a first temperature in a first ambient and...
6998353 Active wafer cooling during damage engineering implant to enhance buried oxide formation in SIMOX wafers  
The present invention provides methods and system for forming a buried oxide layer (BOX) region in a semiconductor substrate, such as, a silicon wafer. In one aspect, in a method of the invention,...
6989332 Ion implantation to modulate amorphous carbon stress  
A method of manufacturing an integrated circuit includes providing a layer of polysilicon material above a semiconductor substrate. A layer of amorphous carbon is provided above the layer of...
6984590 Method of manufacturing an EEPROM device  
A method of manufacturing an EEPROM device is disclosed. An example method forms a screen oxide film on a semiconductor substrate, forms a first ion implantation mask defining a gate insulating...
6972461 Channel MOSFET with strained silicon channel on strained SiGe  
A structure for use as a MOSFET employs an SOI wafer with a SiGe island resting on the SOI layer and extending between two blocks that serve as source and drain; epitaxially grown Si on the...
6972247 Method of fabricating strained Si SOI wafers  
A method of fabricating a strained semiconductor-on-insulator (SSOI) substrate in which the strained semiconductor is a thin semiconductor layer having a thickness of less than 50 nm that is...
6958299 Methods of manufacturing semiconductor devices  
A method for manufacturing a semiconductor device is disclosed. One example manufacturing method includes successively depositing gate insulating layer forming material and gate electrode forming...
6949477 Method of fabricating a capacitive element for a semiconductor device  
A method of fabricating a semiconductor device includes depositing a dielectric film and subjecting the dielectric film to a wet oxidation in a rapid thermal process chamber. The technique can be...
6946358 Method of fabricating shallow trench isolation by ultra-thin SIMOX processing  
The present invention provides a cost effective and simple method of forming isolation regions, such as shallow trench isolation regions, in a semiconductor substrate that avoids etching into the...
6943116 Method for fabricating a p-channel field-effect transistor on a semiconductor substrate  
A p-channel field-effect transistor is formed on a semiconductor substrate. The transistor has an n-doped gate electrode, a buried channel, a p-doped source and a p-doped drain. The transistor is...
6943098 Method of forming semiconductor device with non-conformal liner layer that is thinner on sidewall surfaces  
A method of forming a contact opening is provided. First, a substrate having a plurality of conductive structures formed thereon is provided. An ion implantation is performed. Thereafter, a thermal...
Matches 1 - 50 out of 280 1 2 3 4 5 6 >