Matches 1 - 50 out of 159 1 2 3 4 >
Match Document Document Title
7635654 Magnetic tunnel junction device with improved barrier layer  
Methods and apparatus are provided for magnetic tunnel junction (MTJ) devices and arrays, comprising metal-insulator-metal (M-I-M) structures with opposed first and second ferro-magnetic electrodes...
7622397 InN/TiO2 photosensitized electrode  
The present invention is a photosensitized electrode which absorbs sun light to obtain pairs of separated electron and hole. The photosensitized electrode is fabricated with simple procedure and...
7576015 Methods for manufacturing alignment layer, active device array substrate and color filter substrate  
A method for manufacturing an alignment layer is provided, which includes the following steps. First, a substrate is provided. Next, an auxiliary layer is formed on the substrate. Then, an...
7572741 Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen  
Methods of forming oxide layers on silicon carbide layers are disclosed, including placing a silicon carbide layer in a chamber such as an oxidation furnace tube that is substantially free of...
7566481 Method of making scratch resistant coated glass article including layer(s) resistant to fluoride-based etchant(s)  
A method is provided for making a coated article including an anti-etch layer(s) that is resistant to attacks by at least some fluoride-based etchant(s) for at least a period of time. In certain...
7560352 Selective deposition  
A method for epitaxially forming a silicon-containing material on a substrate surface utilizes a halogen containing gas as both an etching gas as well as a carrier gas through adjustments of the...
7553776 Patterned functionalized silicon surfaces  
The present invention provides a method for preparing a silicon substrate and a silicon substrate having a silicon surface comprising a pattern of covalently bound monolayers. Each of the...
7547643 Techniques promoting adhesion of porous low K film to underlying barrier layer  
Adhesion of a porous low K film to an underlying barrier layer is improved by forming an intermediate layer lower in carbon content, and richer in silicon oxide, than the overlying porous low K...
7541295 Method of manufacturing semiconductor device  
A method of manufacturing a semiconductor device according to one aspect of the present invention comprises: forming a gate insulation film on a semiconductor substrate in which element separation...
7541294 Semiconductor package and semiconductor package mounting method  
To provide a semiconductor package mounting method, with excellent work efficiency, wherein the direction of a semiconductor package can be verified by a simple method before mounting. One corner...
7534730 Producing method of semiconductor device and substrate processing apparatus  
Disclosed is a method for manufacturing a semiconductor device which comprises a step for carrying a plurality of substrates ( 1 ) in a process chamber ( 4 ), a step for supplying an...
7534729 Modification of semiconductor surfaces in a liquid  
Compositions and methods are provided herein that include modifications to at least one surface of a silicon-based semiconductor material. Modifications occur in a liquid and comprise alterations...
7521376 Method of forming a semiconductor structure using a non-oxygen chalcogen passivation treatment  
A method and structure in which Ge-based semiconductor devices such as FETs and MOS capacitors can be obtained are provided. Specifically, the present invention provides a method of forming a...
7517812 Method and system for forming a nitrided germanium-containing layer using plasma processing  
A method and system for forming a nitrided germanium-containing layer by plasma processing. The method includes providing a germanium-containing substrate in a process chamber, generating a plasma...
7420202 Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device  
An electronic device can include a transistor structure of a first conductivity type, a field isolation region, and a layer of a first stress type overlying the field isolation region. For example,...
7413914 Method and apparatus for manufacturing semiconductor device, method and apparatus for controlling the same, and method and apparatus for simulating manufacturing process of semiconductor device  
A process of manufacturing a semiconductor device utilizing a thermo-chemical reaction is started based on preset initial settings, a state function of an atmosphere associated with the...
7378319 Method of forming double gate dielectric layers and semiconductor device having the same  
A method of forming double gate dielectric layers composed of an underlying oxide layer and an overlying oxy-nitride layer is provided to prevent degradation of gate dielectric properties due to...
7378358 Method for forming insulating film on substrate, method for manufacturing semiconductor device and substrate-processing apparatus  
A substrate-processing apparatus ( 100, 40 ) comprises a radical-forming unit ( 26 ) for forming the nitrogen radicals and oxygen radicals through a high-frequency plasma, a processing vessel ( 21...
7365028 Methods of forming metal oxide and semimetal oxide  
The invention includes methods of forming metal oxide and/or semimetal oxide. The invention can include formation of at least one metal-and-halogen-containing material and/or at least one...
7358162 Method of manufacturing semiconductor device  
A method of manufacturing a semiconductor device, includes the steps of: raising a temperature of a sapphire substrate which is included in the semiconductor device from a room temperature to a...
7309660 Buffer layer for selective SiGe growth for uniform nucleation  
Methods for preparing a surface for selective silicon-germanium epitaxy by forming a thin silicon (Si) buffer layer or a thin, low concentration SiGe buffer layer for uniform nucleation, are...
7304002 Method of oxidizing member to be treated  
A method for oxidation of an object to be processed is provided wherein an oxide film can provide favorable film quality and a laminate structure of nitride film and oxide film can be obtained by a...
7288490 Increased alignment in carbon nanotube growth  
Method and system for fabricating an array of two or more carbon nanotube (CNT) structures on a coated substrate surface, the structures having substantially the same orientation with respect to a...
7256259 Methods for ligation of molecules to surfaces  
The present invention is a method for a covalent ligation of one or more molecules to one or more surfaces, that is site-specific and both rapid and high yielding. The covalent ligation to the...
7250375 Substrate processing method and material for electronic device  
A method of processing a for an electronic device, comprising, at least: a nitridation step (a) of supplying nitrogen radicals on the surface of the electronic device substrate, to thereby form a...
7238612 Methods of forming a double metal salicide layer and methods of fabricating semiconductor devices incorporating the same  
A metal salicide layer is formed by sequentially depositing a physical vapor deposition (PVD) metal layer and a chemical vapor deposition (CVD) metal layer on a semiconductor device having an...
7238629 Deposition method, method of manufacturing semiconductor device, and semiconductor device  
The present invention relates to a deposition method of a low dielectric constant insulating film, which comprises the steps of generating a first deposition gas containing at least one silicon...
7232772 Substrate processing method  
A substrate processing method comprises the step of forming an oxide film on a silicon substrate surface, and introducing nitrogen atoms into the oxide film by exposing the oxide film to nitrogen...
7199063 Process for passivating polysilicon and process for fabricating polysilicon thin film transistor  
A process for passivating polysilicon and a process for fabricating a polysilicon thin film transistor. A polysilicon layer is formed. Next, high-pressure annealing is performed using a...
7176146 Method of making a molecule-surface interface  
This invention is generally related to a method of making a molecule-surface interface comprising at least one surface comprising at least one material and at least one organic group wherein the...
7172967 Methods for forming cobalt layers including introducing vaporized cobalt precursors and methods for manufacturing semiconductor devices using the same  
The present invention provides methods for forming cobalt silicide layers, including introducing a vaporized cobalt precursor onto a silicon substrate to form a cobalt layer. The vaporized cobalt...
7169713 Atomic layer deposition (ALD) method with enhanced deposition rate  
An atomic layer deposition method for forming a microelectronic layer employs a reactor chamber pressure of greater than about 500 mtorr and more preferably from about 20 to about 50 torr. By...
7144747 Method for thermally treating a substrate that comprises several layers  
A method of thermally treating a substrate that has multiple layers is provided. A substrate layer that is covered on opposite sides is oxidized from side edges thereof toward a center thereof such...
7144746 Method for monitoring implantation depth of impurity  
The present invention provides a method for measuring an implantation depth of an impurity injected into a wafer by an ion implantation device, using a measurement device and monitoring whether the...
7125811 Oxidation method for semiconductor process  
An oxidation method for a semiconductor process, which oxidizes a surface of a target substrate, includes heating a process container that accommodates the target substrate, and supplying hydrogen...
7122464 Systems and methods of forming refractory metal nitride layers using disilazanes  
A method of forming (and apparatus for forming) refractory metal nitride layers (including silicon nitride layers), such as a tantalum (silicon) nitride barrier layer, on a substrate by using a...
7122484 Process for removing organic materials during formation of a metal interconnect  
A method for removing organic material from an opening in a low k dielectric layer and above a metal layer on a substrate is disclosed. An ozone water solution comprised of one or more additives...
7105459 Method for forming thin film  
It is an object to provide, with a high productivity, a dielectric thin film having a high degree of pore and a very great mechanical strength, and there are included a surfactant film forming step...
7091136 Method of forming semiconductor compound film for fabrication of electronic device and film produced by same  
A process of forming a compound film includes formulating a nano-powder material with a controlled overall composition and including particles of one solid solution. The nano-powder material is...
7091135 Method of manufacturing semiconductor device  
There is disclosed a method of manufacturing a semiconductor device, which comprises forming a film containing metal elements and silicon elements on a semiconductor substrate, exposing the...
7084075 Method for producing a layer on a substrate  
The invention relates to a method for the production of structures in the nanometer range from larger, existing structures. An elastic strain field in generated in an already structured layer and...
7071127 Methods for improving quality of semiconductor oxide composition formed from halogen-containing precursor  
A method and apparatus are disclosed for reducing the concentration of chlorine and/or other bound contaminants within a semiconductor oxide composition that is formed by chemical vapor deposition...
7067328 Methods, devices and compositions for depositing and orienting nanostructures  
Methods and systems for depositing nanomaterials onto a receiving substrate and optionally for depositing those materials in a desired orientation, that comprise providing nanomaterials on a...
7067410 Method of forming a metal silicide  
The present invention provides a technique for forming a metal silicide, such as a cobalt disilicide, even at extremely scaled device dimensions without unduly degrading the film integrity of the...
7053007 Method for fabricating semiconductor integrated circuit device  
A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and...
7033956 Semiconductor memory devices and methods for making the same  
Methods for making memory devices are disclosed for forming germanium nanocrystals in an oxynitride layer. The method includes: forming a first dielectric layer over a substrate; forming an...
7030013 Method for fabricating semiconductor device using high dielectric material  
Disclosed is a method for fabricating a semiconductor device using high dielectric material. The method comprises the steps of: forming an Hf thin film on a silicon substrate; oxidizing the Hf thin...
7015150 Exposed pore sealing post patterning  
Methods and structures having pore-closing layers for closing exposed pores in a patterned porous low-k dielectric layer, and optionally a reactive liner on the low-k dielectric. A first reactant...
6960515 Method of forming a metal gate  
In a method of forming a metal gate electrode, an annealing process is performed in a hydrogen-containing gas ambient following a selective oxidation process. During the annealing process, a metal...
6960502 Semiconductor device fabrication method  
A reduction of a leakage current as well as a decrease in the thickness of an insulating film is realized in a semiconductor device. To this end, a silicon oxide film and a silicon nitride film are...
Matches 1 - 50 out of 159 1 2 3 4 >