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7576015 Methods for manufacturing alignment layer, active device array substrate and color filter substrate  
A method for manufacturing an alignment layer is provided, which includes the following steps. First, a substrate is provided. Next, an auxiliary layer is formed on the substrate. Then, an...
7538044 Process for producing high-purity silicon and apparatus  
When high purity silicon is produced through a gas-phase reaction between silicon tetra-chloride and zinc in a reaction furnace, the produce silicon is obtained as block or molten state. after the...
7482283 Thin film forming method and thin film forming device  
The present invention relates to a method and apparatus for forming a thin film using the ALD process. Prior to the ALD process where each of a plurality of source gasses is supplied one by one,...
7446055 Aerosol misted deposition of low dielectric organosilicate films  
This invention relates to an improvement in a deposition process for producing low dielectric films having a dielectric constant of 3, preferably <2.7 and lower. The process comprises the...
7420202 Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device  
An electronic device can include a transistor structure of a first conductivity type, a field isolation region, and a layer of a first stress type overlying the field isolation region. For example,...
7355269 IC on non-semiconductor substrate  
An integrated circuit and method of fabrication including a non-semiconductor material substrate with a layer of single crystal rare earth deposited on the surface thereof. A layer of single...
7300888 Methods of manufacturing integrated circuit devices having an encapsulated insulation layer  
An integrated circuit device is manufactured by forming an insulating layer on a substrate. A capping layer is formed on the insulating layer and both the capping layer and the insulating layer are...
7268088 Formation of low leakage thermally assisted radical nitrided dielectrics  
One or more aspects of the present invention relate to forming a dielectric suitable for use as a gate dielectric in a transistor. The gate dielectric is formed by a nitridation process that adds...
7265061 Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties  
Methods and apparatus for preparing a porous low-k dielectric material on a substrate are provided. The methods optionally involve the use of ultraviolet radiation to react with and remove porogen...
7176145 Manufacturing method of semiconductor device  
In forming a high density plasma oxide film, a projection shaped like the mesa, the peaked roof, the cone or the like is formed on an element formation region. This projection gives rise to a...
7157331 Ultraviolet blocking layer  
Methods and apparatuses are disclosed relating to blocking ultraviolet electromagnetic radiation from a semiconductor. Ultraviolet electromagnetic radiation, such as ultraviolet electromagnetic...
7138607 Determining method of thermal processing condition  
The invention is a method of determining a set temperature profile of a method of controlling respective substrate temperatures of plurality of groups in accordance with respective corresponding...
7022628 Method for forming quantum dots using metal thin film or metal powder  
Disclosed herein is a method for forming quantum dots, comprising the steps of (a) depositing a metal thin layer onto a substrate, (b) coating a dielectric precursor onto the metal thin layer, and...
6991999 Bi-layer silicon film and method of fabrication  
A bi-layer silicon electrode and its method of fabrication is described. The electrode of the present invention comprises a lower polysilicon film having a random grain microstructure, and an upper...
6977223 Three dimensional microfabrication  
Method for making three-dimensional structures. A template is provided having at least two conductive regions separated by a non-conductive region. The template is disposed in an electrolyte in an...
6949476 Method of creating shielded structures to protect semiconductor devices  
An apparatus on a wafer, comprising: a first metal layer of a wall, a second metal layer of the wall, a third metal layer of the wall comprising: one or more base frames, a fourth metal layer of...
6893982 Method for forming a thin film, methods for forming a gate electrode and transistor using the same, and a gate electrode manufactured using the same  
A method for forming a thin film on a gate electrode reduces oxidation of the gate electrode during a re-oxidation process to fix the damage to the gate oxide film caused during the formation of...
6872972 Method for forming silicon film with changing grain size by thermal process  
Roughly described, a silicon layer transitions from polysilicon at one surface to amorphous silicon at the opposite surface. The transition can be monotonic, and can be either continuous or it can...
6818485 Thin film transistor, thin film transistor array substrate, liquid crystal display device, and electroluminescent display device  
A thin film transistor having a source region and a drain region having a low melting point region composed of a semiconductor with a melting point lower than that of the semiconductor of the...
6780789 Laser thermal oxidation to form ultra-thin gate oxide  
Ultra-thin gate oxides are formed by exposing the upper surface of a substrate to a pulsed laser light beam in an atmosphere containing oxygen. Embodiments include exposing a silicon substrate to a...
6774061 Nanocrystalline silicon quantum dots within an oxide layer  
A process for forming a thin layer of Silicon nanocrystals in an oxide layer is disclosed. The process includes, on a semiconductive substrate, thermally oxidizing a first portion of the substrate...
6770570 Method of forming a semiconductor device with a substantially uniform density low-k dielectric layer  
A semiconductor device 100 includes a low-k dielectric insulator 104 . In the preferred embodiment, a low-k dielectric material 104 is deposited. This material 104 is then cured using a...
6767773 Method of Production of a thin film type semiconductor device having a heat-retaining layer  
An operating semiconductor layer is formed in such a manner that amorphous silicon layer is formed to be shaped so that it has a wide region and a narrow region and the narrow region is connected...
6767799 Laser beam irradiation method  
A laser beam irradiation method that achieves uniform crystallization, even if a film thickness of an a-Si film or the like fluctuates, is provided. The present invention provides a laser beam...
6756319 Silica microstructure and fabrication method thereof  
There is provided a silica microstructure fabrication method. An etch stop layer is first partially deposited on an etching area of a first silica layer formed on a semiconductor substrate. A...
6660570 Method of fabricating a high voltage semiconductor device using SIPOS  
A high voltage semiconductor device including a semiconductor substrate on which a semi-insulating polycrystalline silicon layer is formed to alleviate electric field concentration in a field...
6649032 System and method for sputtering silicon films using hydrogen gas mixtures  
A method has been provided for forming a polycrystalline silicon (p-Si) film with a small amount of hydrogen. Such a film has been found to have excellent sheet resistance, and it is useful in the...
6624921 Micromirror device package fabrication method  
A window is mounted directly to an upper surface of a micromirror device chip. More particularly, the window is mounted above a micromirror device area on the upper surface of the micromirror...
6566219 Method of forming a self aligned trench in a semiconductor using a patterned sacrificial layer for defining the trench opening  
A method of forming a trench can be used in the fabrication of dynamic random access memory (DRAM) cells. In one aspect, a first layer of a first material (e.g., polysilicon) is formed over a...
6492240 Method for forming improved high resistance resistor by treating the surface of polysilicon layer  
Performance of the high resistance resistor, which is polysilicon, is improved by treating the surface of the polysilicon layer in mixed signal integrated circuits for ADSL (Asymmetric Digital...
6486045 Apparatus and method for forming deposited film  
In order to make possible formation of a deposited film of a relatively large area at a treatment rate which could not accomplished by the plasma process of the prior art, and in order to make...
6451694 Control of abnormal growth in dichloro silane (DCS) based CVD polycide WSix films  
In a process for mitigating and/or eliminating the abnormal growth of underlying polysilicon in dichloro silane-based CVD polycide WSix films, a first technique conducts the deposition of the...
6403445 Enhanced trench isolation structure  
An improved method of trench isolation formation includes, for one embodiment, applying a polysilicon layer above a planarized trench, and converting the polysilicon to oxide prior to etching the...
6287987 Method and apparatus for deposition of porous silica dielectrics  
A method and apparatus for forming a dielectric layer. A dielectric precursor solution is deposited onto a surface of a substrate. The substrate is spun to spread the dielectric precursor solution...
6277712 Multilayered wafer with thick sacrificial layer using porous silicon or porous silicon oxide and fabrication method thereof  
A multilayered wafer with a thick sacrificial layer, which is obtained by forming a sacrificial layer of oxidized porous silicon or porous silicon and growing an epitaxial polysilicon layer on the...
6277741 Method and planarizing polysilicon layer  
A method for planarizing a polysilicon layer is described. A polysilicon layer is etched with an oxygen-based gas and a halogen-based gas. The oxygen-based gas comprises an nitrogen oxide oxygen...
6239040 Method of coating amorphous silicon film  
A method of coating an amorphous silicon layer. An amorphous silicon layer is directly deposited on the polysilicon nodes by a self-aligned method. A chemical mechanical polishing process is...
6238995 Method for forming layer of hemispherical grains and for fabricating a capacitor of a semiconductor device  
A method for forming a layer of hemispherical silicon grains having a desired density and a desired shape in order to increase the surface area of the storage electrode of a capacitor. The method...
6197694 In situ method for cleaning silicon surface and forming layer thereon in same chamber  
A method is described for cleaning a silicon surface of a semiconductor wafer in a vacuum chamber while radiantly heating said silicon surface to maintain it within a first temperature range in the...
6133119 Photoelectric conversion device and method manufacturing same  
Catalytic elements such as Ni are intentionally combined with defects that remain inside of a semiconductor substrate or thin film so that the energy state of the defects comes to a stable state....
6114256 Stable metallization for diamond and other materials  
An adherent and metallurgically stable metallization system for diamond is presented. The big improvement in metallurgical stability is attributed to the use of a ternary, amorphous Ti--Si--N...
6090727 Method for local oxidation of silicon (LOCOS) field isolation  
A method for forming field oxide comprises the steps of forming a pad oxide layer over a semiconductor substrate, then forming a silicon layer over the pad oxide layer. A patterned mask is formed...
6087249 Transistor fabrication process employing a common chamber for gate oxide and gate conductor formation  
An integrated circuit transistor is provided having a gate oxide and a gate conductor arranged upon a semiconductor topography, the gate oxide and gate conductor are formed within a common chamber....
5993893 Evaluation method for polycrystalline silicon film  
The invention provides an evaluation method for a polycrystalline silicon film by which the film quality of a polycrystalline silicon film can be evaluated by a simple method. A silicon oxide film...
5963804 Method of making a doped silicon structure with impression image on opposing roughened surfaces  
A silicon structure is formed that includes a free-standing wall having opposing roughened inner and outer surfaces using ion implantation and an unimplanted silicon etching process which is...
5933728 Process for fabricating bottom electrode of capacitor  
A process for fabricating bottom electrodes for storage capacitors of memory cell units of a DRAM is disclosed. The process employs the use of a protective dielectric layer that serves as an...
5817368 Method for forming a thin film  
Alternate formation of high-resistance and low-resistance layers form a thin film with reduced dopant gradient in its thickness. A desired sheet resistance is attained by adjusting the thickness of...
5783257 Method for forming doped polysilicon films  
A number of wafers are loaded into a reaction vessel on a wafer boat; monosilane gas, phosphine gas and N 2 O gas are supplied to form amorphous silicon film doped with, e.g., phosphorus; and then...
5780347 Method of forming polysilicon local interconnects  
A method and apparatus of forming local interconnects in a MOS process deposits a layer of polysilicon over an entire region after several conventional MOS processing steps. The region is then...
5695819 Method of enhancing step coverage of polysilicon deposits  
A thermal decomposition CVD method is provided for forming a polysilicon layer over a stepped surface on a semiconductor wafer. The method includes introducing a continuous flow of silicon...
Matches 1 - 50 out of 112 1 2 3 >