|
Match
|
Document |
Document Title |
|
|
7615421 |
Method for fabricating thin film transistor
The present invention relates to a method for fabricating thin film transistor, more particularly, to a method for fabricating thin film transistor which not only manufactures a polycrystalline...
|
|
|
7611974 |
Multilayer structure and fabrication thereof
A process for fabricating a multilayer structure is provided as well as the structure itself. In accordance with one embodiment, the process includes growing a growth layer on a silicon substrate...
|
|
|
7611972 |
Semiconductor devices and methods of manufacture thereof
Semiconductor devices and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of forming an insulating material layer. The method includes forming a barrier...
|
|
|
7611928 |
Method for producing a substrate
Substrate having a first partial substrate with a carrier layer and a second partial substrate, which is bonded to the first partial substrate. The second partial substrate has an insulator layer,...
|
|
|
7601648 |
Method for fabricating an integrated gate dielectric layer for field effect transistors
Methods for forming a integrated gate dielectric layer on a substrate are provided. In one embodiment, the method includes forming a silicon oxide layer on a substrate, plasma treating the silicon...
|
|
|
7592269 |
Method and apparatus for depositing charge and/or nanoparticles
A method of forming a charge pattern includes treating a stamp layer with a plasma, applying the treated stamp layer to a surface of a substrate to thereby form a charge pattern on the surface of...
|
|
|
7592268 |
Method for fabricating semiconductor device
A method for fabricating a semiconductor device is provided. The method includes: forming a plurality of gate lines on a substrate by performing an etching process; forming an oxide layer on the...
|
|
|
7589029 |
Atomic layer deposition and conversion
A method for growing films for use in integrated circuits using atomic layer deposition and a subsequent converting step is described. In an embodiment, the subsequent converting step includes...
|
|
|
7585786 |
Methods of forming spin-on-glass insulating layers in semiconductor devices and associated semiconductor device
Methods of forming an insulating layer in a semiconductor device are provided in which a metal oxide layer is formed on a semiconductor structure that includes a plurality of gap regions thereon. A...
|
|
|
7585783 |
Drop discharge apparatus, method for forming pattern and method for manufacturing semiconductor device
In this invention, it provides a method for forming a pattern, which is capable of improving position control after a drop, which was discharged from a drop discharge apparatus, was landed on a...
|
|
|
7585769 |
Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE
A method of suppressing parasitic particle formation in a metal organic chemical vapor deposition process is described. The method may include providing a substrate to a reaction chamber, and...
|
|
|
7582555 |
CVD flowable gap fill
The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a...
|
|
|
7579590 |
Method of measuring thin layers using SIMS
A method for measuring the thickness of a layer is provided, comprising (a) providing a structure ( 101 ) comprising a first layer disposed on a second layer; (b) impinging ( 103 ) the structure...
|
|
|
7576015 |
Methods for manufacturing alignment layer, active device array substrate and color filter substrate
A method for manufacturing an alignment layer is provided, which includes the following steps. First, a substrate is provided. Next, an auxiliary layer is formed on the substrate. Then, an...
|
|
|
7569495 |
Semiconductor devices and methods of manufacturing the same
Semiconductor devices and methods of manufacturing the same are disclosed. In a disclosed method, a dangling bond in the active region(s) is removed by providing an enough H 2 in the PMD liner...
|
|
|
7569403 |
Pattern evaluation method, manufacturing method of semiconductor device, correction method of mask pattern and manufacturing method of exposure mask
A pattern evaluation method using a circuit arrangement provided with N (N is a natural number of 2 or greater) circuit groups having wiring whose widths are different to each other, each circuit...
|
|
|
7563728 |
Methods of modifying interlayer adhesion
Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method...
|
|
|
7560377 |
Plasma processes for depositing low dielectric constant films
A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of...
|
|
|
7560329 |
Semiconductor device and method for fabricating the same
The semiconductor device comprises a gate electrode 112 formed over a semiconductor substrate 10 , a sidewall spacer 116 formed on the side wall of the gate electrode 112 , a sidewall spacer ...
|
|
|
7560297 |
Active matrix substrate, manufacturing method thereof, electro-optical device, and electronic apparatus
A method for manufacturing an active matrix substrate, comprises forming a first conductive layer across a first wiring line forming area and a second wiring line forming area on a substrate...
|
|
|
7557047 |
Method of forming a layer of material using an atomic layer deposition process
Disclosed is a method of forming a layer of material using an atomic layer deposition (ALD) process in a process chamber of a process tool. In one illustrative embodiment, the method includes...
|
|
|
7553775 |
Method for coating semiconductor surface, process for production of semiconductor particles using said method, and optical element using said semiconductor particles
The present invention provides a method for coating a group 4 semiconductor surface composed mainly of a group 4 semiconductor elements and a process for producing group 4 semiconductor...
|
|
|
7550397 |
Method of manufacturing a semiconductor device having a pre-metal dielectric liner
Embodiments relate to a semiconductor device and a method of manufacturing a semiconductor device having a pre-metal dielectric liner. In embodiments, method for forming a semiconductor device may...
|
|
|
7544535 |
Method for manufacturing semiconductor laser element
The method for manufacturing a semiconductor laser element according to the present invention has the steps of: forming a semiconductor laminated structure having an active layer composed of a...
|
|
|
7538045 |
Coating process to enable electrophoretic deposition
The present invention relates to a process for the deposition of protective coatings on complex shaped Si-based substrates which are used in articles and structures subjected to high temperature,...
|
|
|
7538007 |
Semiconductor device with flowable insulation layer formed on capacitor and method for fabricating the same
Disclosed is a semiconductor device with a flowable insulation layer formed on a capacitor and a method for fabricating the same. Particularly, the semiconductor device includes: a capacitor formed...
|
|
|
7538000 |
Method of forming double gate transistors having varying gate dielectric thicknesses
Double gate transistors ( 12, 13 ) having different bottom gate dielectric thicknesses are formed on a first wafer ( 101 ) by forming a first gate dielectric layer ( 107 ); removing part of the...
|
|
|
7534731 |
Method for growing a thin oxynitride film on a substrate
A method for growing an oxynitride film on a substrate includes positioning the substrate in a process chamber, heating the process chamber, flowing a wet process gas comprising water vapor and a...
|
|
|
7531467 |
Manufacturing method of semiconductor device and substrate processing apparatus
To provide a manufacturing method of a semiconductor device and a substrate processing apparatus capable of easily controlling a nitrogen concentration distribution in a film containing a metal...
|
|
|
7524777 |
Method for manufacturing an isolation structure using an energy beam treatment
The invention provides a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device, among others, may include forming one or more layers of material...
|
|
|
7521380 |
Methods for fabricating a stress enhanced semiconductor device having narrow pitch and wide pitch transistors
A method is provided for fabricating a semiconductor device on a semiconductor substrate. A plurality of narrow gate pitch transistors (NPTs) and wide gate pitch transistors (WPTs) are formed on...
|
|
|
7521312 |
Method and system for creating self-aligned twin wells with co-planar surfaces in a semiconductor device
A method and system for providing a twin well in a semiconductor device is described. The method and system include providing at least one interference layer and providing a first mask that covers...
|
|
|
7514372 |
Epitaxial growth of relaxed silicon germanium layers
A relaxed silicon germanium structure comprises a silicon buffer layer produced using a chemical vapor deposition process with an operational pressure greater than approximately 1 torr. The relaxed...
|
|
|
7507644 |
Method of forming dielectric layer of flash memory device
A method of manufacturing a flash memory device, wherein according to one embodiment, when a high dielectric material is formed by a remote plasma atomic layer deposition method, first and second...
|
|
|
7498232 |
Semiconductor devices and methods of manufacture thereof
Methods of fabricating semiconductor devices and structures thereof are disclosed. In a preferred embodiment, a method of fabricating a semiconductor device includes providing a workpiece having a...
|
|
|
7498208 |
Chevron CMOS trigate structure
Disclosed herein is a structure with two different type tri-gate MOSFETs formed on the same substrate. Each MOSFET comprises a fin with optimal mobility for the particular type of MOSFET. Due to...
|
|
|
7494894 |
Protection in integrated circuits
A method including, prior to a plasma heat-up operation, forming a liner on a structure coated with an insulator. And a method including forming a trench on a substrate, forming an insulator on the...
|
|
|
7488514 |
Methods of forming barium strontium titanate layers
A chemical vapor deposition method of forming a barium strontium titanate comprising dielectric layer. A substrate is positioned within a reactor. Barium and strontium are provided within the...
|
|
|
7482215 |
Self-aligned dual segment liner and method of manufacturing the same
A method of forming a dual segment liner covering a first and a second set of semiconductor devices is provided. The method includes forming a first liner and a first protective layer on top...
|
|
|
7479430 |
Non-volatile semiconductor memory device
A non-volatile semiconductor memory device according to the present invention has a semiconductor substrate and a memory cell having a floating gate provided through a tunnel insulating layer on...
|
|
|
7476626 |
Etch stop layer for a metallization layer with enhanced etch selectivity and hermeticity
By providing a barrier layer stack including a silicon nitride layer for confining a copper-based metal region, thereby also effectively avoiding any diffusion of oxygen and moisture into the...
|
|
|
7470611 |
In situ deposition of a low K dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
The present invention provides a SiC material, formed according to certain process regimes, useful as a barrier layer, etch stop, and/or an ARC, in multiple levels, including the pre-metal...
|
|
|
7470584 |
TEOS deposition method
A TEOS deposition method. A mixture of gases is introduced into a process chamber, in which the mixture of gases comprises tetra-ethyl-ortho-silicate (TEOS) and N 2 . Compressive stress of a TEOS...
|
|
|
7459405 |
Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill
Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to...
|
|
|
7459372 |
Methods of manufacturing a thin film including hafnium titanium oxide and methods of manufacturing a semiconductor device including the same
The present invention can provide methods of manufacturing a thin film including hafnium titanium oxide. The methods can include introducing a first reactant including a hafnium precursor onto a...
|
|
|
7459325 |
MEMS passivation with transition metals
Organic surfactants are employed to passivate the surfaces of MEMS devices, such as digital micromirrors. The binding of these surfactants to the surface is improved by first associating with the...
|
|
|
7445952 |
Method of forming laminate and method of manufacturing photovoltaic device
A method of forming a laminate and a method of manufacturing a photovoltaic device using the laminate are provided. The laminate forming method includes a first step of forming an intermediate...
|
|
|
7442654 |
Method of forming an oxide layer on a compound semiconductor structure
A method of forming a dielectric layer structure on a supporting semiconductor structure having a first surface comprises providing a first beam of oxide; depositing a first layer of oxide on the...
|
|
|
7432201 |
Hybrid PVD-CVD system
A method for making a film stack containing one or more silicon-containing layers and one or more metal-containing layers and a substrate processing system for forming the film stack on a substrate...
|
|
|
7432126 |
Substrate with semiconductor layer, electronic component, electronic circuit, printable composition and method for production thereof
A substrate comprises at least one semiconductor layer applied to a substrate material, whereby the semiconductor layer comprises an inert matrix material, in which an inorganic semiconductor...
|