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7618891 |
Method for forming self-aligned metal silicide contacts
The present invention relates to a method for forming self-aligned metal silicide contacts over at least two silicon-containing semiconductor regions that are spaced apart from each other by an...
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7611928 |
Method for producing a substrate
Substrate having a first partial substrate with a carrier layer and a second partial substrate, which is bonded to the first partial substrate. The second partial substrate has an insulator layer,...
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7605086 |
Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof
A corrosion resistant component of a plasma chamber includes a liquid crystalline polymer. In a preferred embodiment, the liquid crystalline polymer (LCP) is provided on an aluminum component...
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7598159 |
Method of fabricating thin film transistor substrate and thin film transistor substrate produced using the same
A method of fabricating a thin film transistor substrate includes forming a gate wiring on an insulating substrate and forming a gate insulating layer on the gate wiring; performing a first...
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7592267 |
Method for manufacturing semiconductor silicon substrate and apparatus for manufacturing the same
This invention provides a method for manufacturing a semiconductor silicon substrate by use of carbon dioxide in a supercritical state, which method is capable of making the semiconductor silicon...
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7576016 |
Process for manufacturing semiconductor device
An objective of this invention is to solve the problem that in ALD film deposition using a vertical batch processing machine advantageous for improving a throughput, reliability in a dielectric...
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7575991 |
Removing a high-k gate dielectric
A metal oxide layer on a substrate is converted at least partly to a metal layer. At least part of the metal layer is covered by an oxidation resistant cover. The covered layer and underlying metal...
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7569494 |
Apparatus and method for deposition of thin films
An apparatus for forming a multicomponent thin film, such as a superconducting thin film, on a substrate includes a holder for holding at least one substrate and a deposition/reaction vessel. The...
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7566667 |
Methods of fabricating a semiconductor device having a barrier metal layer and devices formed thereby
A semiconductor device is formed by forming a gate region, including a gate oxide layer, and impurity diffusion regions on a semiconductor substrate, forming a barrier metal layer on the gate...
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7560352 |
Selective deposition
A method for epitaxially forming a silicon-containing material on a substrate surface utilizes a halogen containing gas as both an etching gas as well as a carrier gas through adjustments of the...
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7557004 |
Method for fabricating semiconductor device
The method for fabricating the semiconductor device includes the steps of: forming an insulating film 20 , a conductive film 22 and an insulating film 24 over a semiconductor substrate 10 ...
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7553775 |
Method for coating semiconductor surface, process for production of semiconductor particles using said method, and optical element using said semiconductor particles
The present invention provides a method for coating a group 4 semiconductor surface composed mainly of a group 4 semiconductor elements and a process for producing group 4 semiconductor...
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7553704 |
Antifuse element and method of manufacture
An antifuse element ( 102, 152, 252, 302, 352, 402, 602, 652, 702 ) and method of fabricating the antifuse element, including a substrate material ( 101 ) having an active area ( 106 ) formed in an...
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7531467 |
Manufacturing method of semiconductor device and substrate processing apparatus
To provide a manufacturing method of a semiconductor device and a substrate processing apparatus capable of easily controlling a nitrogen concentration distribution in a film containing a metal...
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7514038 |
Sensor substrate and method of fabricating same
A substrate with hermetically sealed vias extending from one side of the substrate to another and a method for fabricating same. The vias may be filled with a conductive material such as, for...
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7449385 |
Gate dielectric and method
CMOS gate dielectric made of high-k metal silicates by reaction of metal with silicon dioxide at the silicon surface. Optionally, a silicon dioxide monolayer may be preserved at the interface.
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7416994 |
Atomic layer deposition systems and methods including metal beta-diketiminate compounds
The present invention provides atomic layer deposition systems and methods that include metal compounds with at least one β-diketiminate ligand. Such systems and methods can be useful for...
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7405120 |
Method of forming a gate insulator and thin film transistor incorporating the same
Disclosed herein is a method of manufacturing a gate insulator and a thin film transistor (“TFT”) incorporating the gate insulator, including forming an oxygen-containing, conductive gate on a...
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7393785 |
Methods and apparatus for forming rhodium-containing layers
A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula L y RhY z is provided. Also provided is a chemical vapor co-deposited...
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7384880 |
Method for making a semiconductor device having a high-k gate dielectric
A method for making a semiconductor device is described. That method comprises converting a hydrophobic surface of a substrate into a hydrophilic surface, and forming a high-k gate dielectric layer...
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7344913 |
Spin on memory cell active layer doped with metal ions
A method of making organic memory cells made of two electrodes with a controllably conductive media between the two electrodes is disclosed. The controllably conductive media contains an active...
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7338826 |
Silicon nitride passivation with ammonia plasma pretreatment for improving reliability of AlGaN/GaN HEMTs
This invention pertains to an electronic device and to a method for making it. The device is a heterojunction transistor, particularly a high electron mobility transistor, characterized by presence...
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7335606 |
Silicide formed from ternary metal alloy films
A NiSi layer over silicon that is thermally stable and can form even in the presence of oxides. The method of fabricating the nickel silicide layer includes providing a substrate comprising...
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7312156 |
Method and apparatus for supporting a semiconductor wafer during processing
A semiconductor wafer is processed while being supported without mechanical contact. Instead, the wafer is supported by gas streams emanating from a large number of passages in side sections...
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7304002 |
Method of oxidizing member to be treated
A method for oxidation of an object to be processed is provided wherein an oxide film can provide favorable film quality and a laminate structure of nitride film and oxide film can be obtained by a...
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7291566 |
Barrier layer for a processing element and a method of forming the same
In order to mitigate erosion of exposed processing elements in a processing system by the process and any subsequent contamination of the substrate in the processing system, processing elements...
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7279432 |
System and method for forming an integrated barrier layer
An apparatus and method for forming an integrated barrier layer on a substrate is described. The integrated barrier layer comprises at least a first refractory metal layer and a second refractory...
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7271077 |
Deposition methods with time spaced and time abutting precursor pulses
An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer...
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7238612 |
Methods of forming a double metal salicide layer and methods of fabricating semiconductor devices incorporating the same
A metal salicide layer is formed by sequentially depositing a physical vapor deposition (PVD) metal layer and a chemical vapor deposition (CVD) metal layer on a semiconductor device having an...
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7205217 |
Method for forming trench gate dielectric layer
A method for forming a trench gate dielectric layer is described. First, a substrate having a trench therein is provided. An in-situ steam generated oxidation process is performed to form a...
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7176094 |
Ultra-thin gate oxide through post decoupled plasma nitridation anneal
DPN (decoupled plasma nitridation) is used to improve robustness of ultra thin gate oxides. Conventionally, this is followed by an anneal in pure helium to remove structural defects in the oxide....
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7172967 |
Methods for forming cobalt layers including introducing vaporized cobalt precursors and methods for manufacturing semiconductor devices using the same
The present invention provides methods for forming cobalt silicide layers, including introducing a vaporized cobalt precursor onto a silicon substrate to form a cobalt layer. The vaporized cobalt...
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7172935 |
Method of forming multiple gate insulators on a strained semiconductor heterostructure
A method for forming multiple gate insulators on a strained semiconductor heterostructure, including the steps of oxidation and deposition.
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7157383 |
Method for forming silicon dioxide film on silicon substrate, method for forming oxide film on semiconductor substrate, and method for producing semiconductor device
After cleaning a surface of a silicon substrate ( 1 ), impurities and natural oxide film existing on the silicon substrate ( 1 ) are removed by soaking the silicon substrate ( 1 ) in a...
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7157331 |
Ultraviolet blocking layer
Methods and apparatuses are disclosed relating to blocking ultraviolet electromagnetic radiation from a semiconductor. Ultraviolet electromagnetic radiation, such as ultraviolet electromagnetic...
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7125811 |
Oxidation method for semiconductor process
An oxidation method for a semiconductor process, which oxidizes a surface of a target substrate, includes heating a process container that accommodates the target substrate, and supplying hydrogen...
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7118968 |
Method for manufacturing interpoly dielectric
Roughly described, a floating gate memory cell is fabricated by forming an oxide-nitride dielectric layer above a floating gate of the memory cell and in an oxide growth region not above a floating...
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7091138 |
Forming method and a forming apparatus of nanocrystalline silicon structure
A forming method and a forming apparatus of nanocrystalline silicon structure makes it possible to prepare a nanocrystalline silicon structure at a low temperature to have densely packed silicon...
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7056381 |
Fabrication method of semiconductor device
Concentration of metal element which promotes crystallization of silicon and which exists within a crystal silicon film obtained by utilizing the metal element is reduced. A first heat treatment...
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7052997 |
Method to form etch and/or CMP stop layers
In a DRAM fabrication process, a first oxide is provided over a transistor gate and over a substrate extending from under the gate. The deposition is non-conformal in that the oxide is thicker over...
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7045470 |
Methods of making thin dielectric layers on substrates
Apparatus comprising: a first substrate; a dielectric layer comprising a first dielectric material on the first substrate, the dielectric layer having a dielectric layer thickness and being...
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7033956 |
Semiconductor memory devices and methods for making the same
Methods for making memory devices are disclosed for forming germanium nanocrystals in an oxynitride layer. The method includes: forming a first dielectric layer over a substrate; forming an...
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7008845 |
Method and composite for decreasing charge leakage
A dielectric insulating composite for insulating a floating gate from a control gate in a non-volatile memory is described. A material, such as an undoped polysilicon, amorphous silicon, or...
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6992020 |
Method of fabricating semiconductor device
A semiconductor device of this invention includes a silicon nitride film formed on a semiconductor substrate and having a density of 2.2 g/cm 3 or less, and a silicon oxide film formed on the...
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6992018 |
Chemical fluid deposition for the formation of metal and metal alloy films on patterned and unpatterned substrates
Methods are described for depositing a film or discontinuous layer of discrete clusters, of material (e.g., metals, metal mixtures or alloys, metal oxides, or semiconductors) on the surface of a...
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6936503 |
Method for manufacturing a MOS transistor
In a pretreatment process, a silicon oxide film ( 13 ) with nitrogen content is formed on a semiconductor substrate ( 10 ). In a segregation process executing heat treatment in an in-oxidiz-able...
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6933248 |
Method for transistor gate dielectric layer with uniform nitrogen concentration
The instant invention describes a method for forming a dielectric film with a uniform concentration of nitrogen. The films are formed by first incorporating nitrogen into a dielectric film using...
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6927144 |
Method for manufacturing buried insulating layer type single crystal silicon carbide substrate
Provided is a manufacturing method of a buried insulating layer type semiconductor silicon carbide substrate excellent in flatness of an interfaces in contact the insulating layer and a...
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6913979 |
Method of manufacturing a metal oxide semiconductor transistor
Disclosed is a method of manufacturing a MOS transistor having an enhanced reliability. A passivation layer is formed on a gate electrode and on a substrate to prevent a generation of a recess on...
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6911400 |
Nonlithographic method to produce self-aligned mask, articles produced by same and compositions for same
A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having...
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