|
Match
|
Document |
Document Title |
|
|
7615501 |
Method for making a thin film layer
A method of making a patterned layer comprises directing a beam of vaporized material toward a reflector such that the beam of vaporized material impinges an impingement surface of the reflector...
|
|
|
7615500 |
Method for depositing film and method for manufacturing semiconductor device
A method for depositing a film includes: (a) processing a wafer, including forming a high dielectric constant film on a first wafer; and achieving nitridation of the high dielectric constant film...
|
|
|
7615498 |
Method of manufacturing a semiconductor device
A semiconductor device 200 comprises a SiCN film 202 formed on a semiconductor substrate (not shown), a first SiOC film 204 formed thereon, a SiCN film 208 formed thereon, a second SiOC...
|
|
|
7615479 |
Assembly comprising functional block deposited therein
An electronic assembly. The assembly includes a substrate, a plurality of recessed regions, and a plurality of functional blocks. Each functional block is deposited in one of the recessed regions....
|
|
|
7608549 |
Method of forming non-conformal layers
In one aspect, non-conformal layers are formed by variations of plasma enhanced atomic layer deposition, where one or more of pulse duration, separation, RF power on-time, reactant concentration,...
|
|
|
7604832 |
Film forming method, film forming apparatus, pattern forming method, and manufacturing method of semiconductor apparatus
There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port...
|
|
|
7598182 |
Anti-reflective coating forming composition containing polyamic acid
There is provided an anti-reflective coating forming composition for use in a lithography and for forming an anti-reflective coating that can be developed with an alkaline developer for...
|
|
|
7592254 |
Methods for coating and filling high aspect ratio recessed features
The present invention provides methods for conformally or superconformally coating and/or uniformly filling structures with a continuous, conformal layer or superconformal layer. Methods of the...
|
|
|
7591937 |
Method of fixing macro-objects to an electricity conducting- or semi-conducting surface by means of electrografting, surfaces thus obtained and applications thereof
The invention relates to a method of fixing macro-objects to an electricity conducting- or semi-conducting surface by means of electrografting. The invention also relates to the electricity...
|
|
|
7588995 |
Method to create damage-free porous low-k dielectric films and structures resulting therefrom
Low dielectric constant dielectric films having a high degree of porosity suffer from poor mechanical strength and can be damaged during processing steps. Damage can be substantially eliminated or...
|
|
|
7588799 |
Metal film production apparatus
A source gas is supplied into a chamber through a nozzle, and electromagnetic waves are thrown from a plasma antenna into the chamber. The resulting Cl 2 gas plasma causes an etching reaction to a...
|
|
|
7585784 |
System and method for reducing etch sequencing induced downstream dielectric defects in high volume semiconducting manufacturing
A system and method is disclosed for reducing etch sequencing induced downstream dielectric defects produced in a SOG planarization process used in high volume semiconductor manufacturing. Three...
|
|
|
7585783 |
Drop discharge apparatus, method for forming pattern and method for manufacturing semiconductor device
In this invention, it provides a method for forming a pattern, which is capable of improving position control after a drop, which was discharged from a drop discharge apparatus, was landed on a...
|
|
|
7582585 |
Coating compositions
Coating compositions are provided that include a component that is a product of materials comprising an amine and an anhydride and/or an anhydride derivative. Compositions of the invention are...
|
|
|
7582571 |
Substrate processing method and recording medium
A substrate processing method using a substrate processing apparatus including: a process container holding a substrate to be processed therein; first gas supplying means having flow rate adjusting...
|
|
|
7582555 |
CVD flowable gap fill
The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a...
|
|
|
7576016 |
Process for manufacturing semiconductor device
An objective of this invention is to solve the problem that in ALD film deposition using a vertical batch processing machine advantageous for improving a throughput, reliability in a dielectric...
|
|
|
7576012 |
Atomic layer deposition methods
A first precursor gas is flowed to the substrate within the chamber effective to form a first monolayer on the substrate. A second precursor gas different in composition from the first precursor...
|
|
|
7572739 |
Tape removal in semiconductor structure fabrication
A semiconductor structure fabrication method for removing a tape physically attached to a device side of the semiconductor substrate by an adhesive layer of the tape, wherein the adhesive layer...
|
|
|
7572686 |
System for thin film deposition utilizing compensating forces
A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film...
|
|
|
7569913 |
Boron etch-stop layer and methods related thereto
A method for forming an etch-stop layer and a resulting structure fabricated therefrom. The etch-stop layer has a semiconductor layer having a first surface and a boron layer formed below the first...
|
|
|
7560392 |
Electrical components for microelectronic devices and methods of forming the same
Electrical components for microelectronic devices and methods for forming electrical components. One particular embodiment of such a method comprises depositing an underlying layer onto a...
|
|
|
7557047 |
Method of forming a layer of material using an atomic layer deposition process
Disclosed is a method of forming a layer of material using an atomic layer deposition (ALD) process in a process chamber of a process tool. In one illustrative embodiment, the method includes...
|
|
|
7550336 |
Method for fabricating an NMOS transistor
A method for fabricating an NMOS transistor is disclosed. First, a substrate having a gate structure thereon is provided. A carbon implantation process is performed thereafter by implanting carbon...
|
|
|
7547645 |
Method for coating a structure comprising semiconductor chips
A method for coating a structure that includes at least one semiconductor chip involves electrostatically depositing coating particles on the areas of the structure to be coated. The coating...
|
|
|
7547644 |
Methods and apparatus for forming barrier layers in high aspect ratio vias
In a first aspect, a method is provided that includes ( 1 ) forming a first barrier layer over the sidewalls and bottom of a via using atomic layer deposition within an atomic layer deposition...
|
|
|
7547643 |
Techniques promoting adhesion of porous low K film to underlying barrier layer
Adhesion of a porous low K film to an underlying barrier layer is improved by forming an intermediate layer lower in carbon content, and richer in silicon oxide, than the overlying porous low K...
|
|
|
7541297 |
Method and system for improving dielectric film quality for void free gap fill
A method of forming a silicon oxide layer on a substrate. The method includes providing a substrate and forming a first silicon oxide layer overlying at least a portion of the substrate, the first...
|
|
|
7541226 |
Manufacturing process of thin film transistor
A manufacturing process of a thin film transistor, includes:
forming a silicon film of a preset thickness, in which film stress becomes under 2.0×10 9 dyne/cm 2 in absolute value, on one...
|
|
|
7538043 |
Phase change memory device and fabrication method thereof
A phase change memory device comprising an electrode, a phase change layer crossing and contacting the electrode at a cross region thereof, and a transistor comprising a source and a drain, wherein...
|
|
|
7534729 |
Modification of semiconductor surfaces in a liquid
Compositions and methods are provided herein that include modifications to at least one surface of a silicon-based semiconductor material. Modifications occur in a liquid and comprise alterations...
|
|
|
7534467 |
Reduced-pressure drying unit and coating film forming method
The invention includes a hermetic container provided with a substrate mount; a vacuum exhauster connected to the hermetic container; a current member; and a current member raising and lowering...
|
|
|
7531891 |
Semiconductor device
A semiconductor device having improved adhesiveness between films composing an interlayer insulating film is presented by providing multilayered films in the interlayer insulating films having film...
|
|
|
7531452 |
Strained metal silicon nitride films and method of forming
A method for forming a strained metal nitride film and a semiconductor device containing the strained metal nitride film. The method includes exposing a substrate to a gas containing a metal...
|
|
|
7524750 |
Integrated process modulation (IPM) a novel solution for gapfill with HDP-CVD
A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an...
|
|
|
7521379 |
Deposition and densification process for titanium nitride barrier layers
In one embodiment, a method for forming a titanium nitride barrier material on a substrate is provided which includes depositing a titanium nitride layer on the substrate by a metal-organic...
|
|
|
7521376 |
Method of forming a semiconductor structure using a non-oxygen chalcogen passivation treatment
A method and structure in which Ge-based semiconductor devices such as FETs and MOS capacitors can be obtained are provided. Specifically, the present invention provides a method of forming a...
|
|
|
7517771 |
Method for manufacturing semiconductor device having trench
A method for manufacturing a semiconductor device includes steps of: forming a trench on a semiconductor substrate, which is made of silicon; and filling the trench with an epitaxial layer. The...
|
|
|
7514371 |
Semiconductor substrate surface protection method
A semiconductor substrate surface protection method for maintaining surfaces thereof clean includes providing a tank containing pure water and a chemical protection material which is a high...
|
|
|
7514370 |
Compressive nitride film and method of manufacturing thereof
Embodiments of the invention provide a method of forming a compressive stress nitride film overlying a plurality of p-type field effect transistor gate structures produced on a substrate through a...
|
|
|
7514277 |
Etching method and apparatus
An etching method capable of controlling the film thickness of a hard mask layer uniformly is provided. A plasma etching is performed on a native oxide film by using an etching gas containing, for...
|
|
|
7507675 |
Device manufacturing method and device
A method for patterning a polished silicon surface is disclosed, the method including steps leading to an organic monolayer on at least a part of the silicon surface, the monolayer being...
|
|
|
7504344 |
Method of forming a carbon polymer film using plasma CVD
A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a...
|
|
|
7501350 |
Plasma processing method
Disclosed is a plasma processing method for processing a target object by using a plasma of a process gas containing a fluorocarbon compound. Used is a fluorocarbon compound having at least one...
|
|
|
7501315 |
Methods and devices for forming nanostructure monolayers and devices including such monolayers
Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, patterning using resist, and/or...
|
|
|
7498232 |
Semiconductor devices and methods of manufacture thereof
Methods of fabricating semiconductor devices and structures thereof are disclosed. In a preferred embodiment, a method of fabricating a semiconductor device includes providing a workpiece having a...
|
|
|
7491628 |
Method for patterning large scale nano-fibrous surfaces using capillography
A method of assembling large numbers of nanoscale structures in pre-determined ways using fluids or capillary lithography to control the patterning and arrangement of the individual nanoscale...
|
|
|
7488656 |
Removal of charged defects from metal oxide-gate stacks
The present invention provides a method for removing charged defects from a material stack including a high k gate dielectric and a metal contact such that the final gate stack, which is useful in...
|
|
|
7485560 |
Method for fabricating crystalline silicon thin films
An amorphous silicon (Si) film is taken to form a metal silicide of Si—Al(aluminum) under a high temperature. Al atoms is diffused into the amorphous Si film for forming the metal silicide of...
|
|
|
7485202 |
Method for making a flat-top pad
A method for preparing flat-top pads in electronic components includes the steps of: a) stencil printing a flat-top deposit of a curable silicone composition onto a first electronic substrate,...
|