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6878641 |
Composition and chemical vapor deposition method for forming organic low k dielectric films
Precursor compositions for the CVD formation of low k dielectric films on a substrate, e.g., as an interlayer dielectric for fabrication of microelectronic device structures. The precursor...
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6875702 |
Plasma treatment system
A process for forming a conductive via in an integrated circuit structure that includes a first dielectric layer overlying a first conductive layer. A via cavity is formed in the first dielectric...
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6875642 |
Method for manufacturing thin film, and thin film
A method for manufacturing thin film and a thin film. The method comprises dipping a substrate in a solution that dries up forming a layer on the surface of the substrate and controlling layer...
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6868888 |
Thin film forming apparatus, film supplier, film cassette, transport mechanism and transport method
A center robot is fixed approximately in a central portion of a process part. A coating unit, a drying unit, a transfer unit, a peeling unit, a film supplying unit and a reversing unit are arranged...
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6869875 |
Method to achieve continuous hydrogen saturation in sparingly used electroless nickel plating process
An improved wire bonding process for copper-metallized integrated circuits is provided by a nickel layer that acts as a barrier against up-diffusing copper. In accordance with the present invention...
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6869890 |
Processing apparatus to be sealed against workpiece
A processing apparatus is used for processing a workpiece such as a semiconductor wafer. The processing apparatus comprises a cover for covering a portion of a surface, to be processed, of a...
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6867149 |
Growth of multi-component alloy films with controlled graded chemical composition on sub-nanometer scale
The chemical composition of thin films is modulated during their growth. A computer code has been developed to design specific processes for producing a desired chemical composition for various...
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6864189 |
Methodology for measuring and controlling film thickness profiles
A method evaluating an integrated circuit manufacturing process first establishes a “desired” profile of a given film in a prescribed manufacturing process by first recording multiple thickness...
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6861377 |
Surface treatment method, surface-treated substrate, method for forming film pattern, method for making electro-optical device, electro-optical device, and electronic apparatus
The invention provides a surface treatment method by which a substrate with desired uniform lyophilicity is obtained in order to enhance the formation of a film pattern by an ink-jet process; a...
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6858548 |
Application of carbon doped silicon oxide film to flat panel industry
A process for depositing a low dielectric constant layer (k<3) on a flat panel display and a flat panel display. The process includes reacting one or more organosilicon compounds with an oxygen...
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6852644 |
Atmospheric robot handling equipment
A semiconductor-manufacturing tool has two load locks, one for semiconductor wafers entering the tool for processing and the other for wafers leaving the tool after being processed. The load locks...
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6849560 |
Method of depositing silicon thin film and silicon thin film solar cell
In a method of depositing a silicon thin film by using a vertical plasma CVD apparatus having steps of holding a substrate having an area not smaller than 1,200 cm 2 and having a conductive film...
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6848191 |
Apparatus and method for forming a combined substrate structure
An apparatus for supporting a combined substrate structure, comprising first and second substrates combined, includes: level-adjustable supporting mechanisms for supporting plural supporting points...
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6844261 |
Method of forming ruthenium and ruthenium oxide films on a semiconductor structure
A method is provided for forming a film of ruthenium or ruthenium oxide to the surface of a substrate by employing the techniques of chemical vapor deposition to decompose ruthenium precursor...
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6841489 |
Method of manufacturing a semiconductor device and method of forming a film
A semiconductor device manufacturing method includes the steps of (a) introducing a first substrate into a first CVD chamber; (b) raising the first substrate temperature to a predetermined value;...
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6841342 |
Substrate processing apparatus and substrate processing method
A substrate processing apparatus for processing a substrate coated with a chemical amplification type resist and subjected to a light-exposure treatment comprises a substrate table on which is...
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6835669 |
Film forming method, semiconductor device and semiconductor device manufacturing method
The present invention relates to a film forming method of forming an interlayer insulating film having a low dielectric constant for covering wiring. The insulating film covering wiring is formed...
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6833322 |
Apparatuses and methods for depositing an oxide film
Methods and apparatuses for forming an oxide film. The method includes depositing an oxide film on a substrate using a process gas mixture that comprises a silicon source gas, an oxygen gas, and a...
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6830996 |
Device performance improvement by heavily doped pre-gate and post polysilicon gate clean
The present disclosure provides a method is provided for fabricating a metal oxide semiconductor (MOS) gate stack on a semiconductor substrate. The method includes generating moisture on a surface...
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6830624 |
Blocker plate by-pass for remote plasma clean
A flow of a remotely-generated plasma to a processing chamber by-passes a blocker plate and thereby avoids unwanted recombination of active species. By-passing the blocker plate according to...
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6827835 |
Method for electroplated metal annealing process
A method for electroplated metal annealing process. First, a semiconductor structure is provided, wherein the semiconductor structure has a plurality of semiconductor components, such as a gate...
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6828246 |
Gas delivering device
A gas delivering device inside a gaseous reaction chamber capable of increasing gas flow in areas having a deficient supply of gas by forming additional holes in corresponding positions. Because a...
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6828254 |
Plasma enhanced chemical vapor deposition apparatus and method for forming nitride layer using the same
A plasma enhanced chemical vapor deposition apparatus and a method of forming a nitride layer using the same, wherein the plasma enhanced CVD apparatus includes a process chamber including an upper...
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6825122 |
Method for fabricating a patterned thin film and a micro device
An organic resin with an optical crosslinking agent therein is coated to form an organic resin layer over a resist mast and a patterned thin film, and crosslinked. Although some debris are formed...
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6821563 |
Gas distribution system for cyclical layer deposition
Embodiments of the invention are generally directed to a cyclical layer deposition system, which includes a processing chamber, at least one load lock chamber connected to the processing chamber, a...
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6821909 |
Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application
A method for depositing a passivation layer on a substrate surface using one or more electroplating techniques is provided. Embodiments of the method include selectively depositing an initiation...
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6821910 |
Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation
A multizone, segmented showerhead provides a gas impingement flux distribution which is controllable in two lateral dimensions to achieve programmable uniformity in chemical vapor deposition, in...
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6821550 |
Apparatus and method for applying process solution
A process solution applying apparatus comprising a substrate holding mechanism for holding a substrate, a process solution supplying system for applying process solution in a prescribed amount to...
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6818566 |
Thermal activation of fluorine for use in a semiconductor chamber
A method and system for thermally activating a oxidizing cleaning gas for use in a semiconductor process chamber cleaning process. The oxidizing cleaning gas is thermally activated by reacting the...
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6815372 |
Sputtered insulating layer for wordline stacks
Insulating material is deposited onto a gate dielectric surface separating two wordline stacks, the method comprising the steps of: A. Forming at least two adjacent wordline stacks over a common...
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6814572 |
Heat treating method and heat treating device
A thermal processing unit of the present invention includes: a reaction container which an object to be processed is conveyed into and from; a process-gas introducing part for introducing a process...
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6815369 |
Method for monitoring deposition reaction during processing the surface of a semiconductor substrate
A semiconductor manufacturing apparatus and a method for processing a surface of a substrate are provided, which can realize a process at a constant etching rate, a low microloading effect, high...
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6811671 |
Method of controlling zinc-doping in a copper-zinc alloy thin film electroplated on a copper surface and a semiconductor device thereby formed
A method of fabricating a semiconductor device, having a reduced-oxygen Cu—Zn alloy thin film ( 30 ) electroplated on a Cu surface ( 20 ) by electroplating, using an electroplating apparatus, the...
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6812162 |
Rapid deposition of borosilicate glass films
A method for rapidly depositing a borosilicate glass film on a semiconductor wafer includes controlling the pressure within the chamber, introducing oxygen into the chamber, introducing a carrier...
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6806194 |
Apparatus and methods for processing a workpiece
A system for processing a workpiece includes a head attached to a head lifter. A workpiece is supported in the head between an upper rotor and a lower rotor. A base has a bowl for containing a...
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6806210 |
Tantalum oxide film, use thereof, process for forming the same and composition
A composition for forming a high-quality tantalum film which is advantageously used as an capacitor insulating film and a process for forming the high-quality tantalum film. The composition for...
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6800538 |
Semiconductor device fabrication method and semiconductor fabrication control method
The method for fabricating a semiconductor device including a step of forming a gate insulation film on a semiconductor substrate 10 , the method further comprises, before the step of forming the...
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6800565 |
Method of forming thin oxidation layer by cluster ion beam
A method of forming a thin-film magnetic element, such as a TMR element or a spin valve element, on a substrate wherein at least a surface portion of a nonmagnetic metal layer is oxidized by...
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6797607 |
Contact planarization using nanoporous silica materials
A process for forming a substantially planarized nanoporous dielectric silica coating on a substrate suitable for preparing a semiconductor device, and semiconductor devices produced by the methods...
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6797642 |
Method to improve barrier layer adhesion
The present invention provides a method to improve adhesion of barrier, metal, dielectric interfaces. In the process flow, a first barrier material is formed on a dielectric layer and bombarded...
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6797643 |
Plasma enhanced CVD low k carbon-doped silicon oxide film deposition using VHF-RF power
A method of depositing a low dielectric constant film on a substrate. In one embodiment, the method includes the steps of positioning the substrate in a deposition chamber, providing a gas mixture...
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6794300 |
Mechanically scanned wet chemical processing
A substrate such as a semiconductor wafer is move across the top of an open trough while a liquid is maintained in the trough at a level just above the walls of the trough, as by supplying the...
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6794291 |
Reactor for processing a semiconductor wafer
An apparatus for processing a semiconductor wafer or similar article includes a reactor having a processing chamber formed by upper and lower rotors. The wafer is supported between the rotors. The...
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6794308 |
Method for reducing by-product deposition in wafer processing equipment
A method of reducing by-product deposition inside wafer processing equipment includes providing a chamber having a peripheral inner wall and placing a semiconductor wafer within the chamber. The...
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6790787 |
Structure having narrow pores
A method of producing a structure having narrow pores includes a first step of bringing pore-guiding members into contact with upper and lower surfaces of a member comprising aluminum as a...
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6790793 |
Method for manufacturing semiconductor device
In a method for manufacturing a semiconductor device, the following three steps (oxide film forming step, cycle purge step, and coating step) are performed sequentially before performing substrates...
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6787478 |
Method of forming deposited film
In a deposited-film-forming method of forming a compound film on a substrate by a chemical reaction between the particles of a raw material emitted from a raw material particle generation source...
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6787477 |
Methods of forming dielectric layers and methods of forming capacitors
Methods of forming dielectric layers and methods of forming capacitors are described. In one embodiment, a substrate is placed within a chemical vapor deposition reactor. In the presence of...
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6787463 |
Chemical vapor deposition methods, and atomic layer deposition method
The invention includes reactive gaseous deposition precursor feed apparatus and chemical vapor deposition methods. In one implementation, a reactive gaseous deposition precursor feed apparatus...
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6783592 |
Lateral movement of screw dislocations during homoepitaxial growth and devices yielded therefrom free of the detrimental effects of screw dislocations
The present invention is related to a method that enables and improves wide bandgap homoepitaxial layers to be grown on axis single crystal substrates, particularly SiC. The lateral positions of...
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