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7037856 |
Method of fabricating a low-defect strained epitaxial germanium film on silicon
A method of fabricating a germanium film on a silicon substrate includes preparing a silicon substrate; depositing a first germanium film to form a continuous germanium film on the silicon...
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7037855 |
Method of forming fluorine-doped low-dielectric-constant insulating film
A method of forming low-dielectric-constant silicon oxide films by capacitive-coupled plasma CVD comprises: introducing a processing gas comprising SiH 4 as a silicon source gas, SiF 4 as a...
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7033937 |
Apparatus and method for use in manufacturing a semiconductor device
An apparatus for use in manufacturing a semiconductor device allows one or more substrates treated substantially free of the metal particles released from the chamber wall and the high energy...
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7030036 |
Method of forming oxide layer in semiconductor device
Provided is related to a method of forming an oxide layer of a semiconductor device. In the method, a first oxide layer is formed with a first thickness on a semiconductor substrate, that is...
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7030035 |
Prevention of electrostatic wafer sticking in plasma deposition/etch tools
To remove unwanted electrostatic charge from a substrate or substrate clamping mechanism in a plasma processing chamber following the plasma processing of the substrate, the process of shutting...
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7026053 |
Process for producing silica-based film, silica-based film, insulating film, and semiconductor device
A process for producing a silica-based film which comprises irradiating a film comprising at least one siloxane compound with electron beams to thereby convert the film into a film having a...
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7018940 |
Method and apparatus for providing uniform gas delivery to substrates in CVD and PECVD processes
A showerhead diffuser apparatus for a CVD process has a first channel region having first plural independent radially-concentric channels and individual gas supply ports from a first side of the...
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7015144 |
Compositions including perhydro-polysilazane used in a semiconductor manufacturing process and methods of manufacturing semiconductor devices using the same
Compositions that can be used in semiconductor manufacturing processes, comprising perhydro-polysilazane having a weight average molecular weight of about 300 to about 3,000 and a polydispersity...
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7015150 |
Exposed pore sealing post patterning
Methods and structures having pore-closing layers for closing exposed pores in a patterned porous low-k dielectric layer, and optionally a reactive liner on the low-k dielectric. A first reactant...
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7011863 |
Substrate processing apparatus and substrate processing method
A substrate which has been subjected to heat processing in any of hot plate units is transferred to a normal cooling unit by a transfer device and subjected to cooling processing to some extent,...
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7008879 |
Isolation chamber arrangement for serial processing of semiconductor wafers for the electronic industry
An apparatus for the treatment of semiconductor wafers, comprising a supportive frame and a process table arranged on the supportive frame. The process table comprises a stationary upper platen and...
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7005389 |
Methods for forming a thin film on an integrated circuit device by sequentially providing energies to activate the reactants
Methods for forming a thin film on an integrated circuit device including providing energy to reactants in a deposition chamber to activate the reactants. The activated reactants are then deposited...
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7005391 |
Method of manufacturing inorganic nanotube
A method of manufacturing an inorganic nanotube using a carbon nanotube (CNT) as a template, includes preparing a template on which a CNT or a CNT array is formed, forming an inorganic thin film on...
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7001850 |
Method of depositing dielectric films
A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon...
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6998351 |
Method for forming a micro pattern
Disclosed is a method for forming a micro pattern. After a dual photoresist film having different glass transition temperatures is coated, an exposure process and a wet development process are...
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6989336 |
Process for laminating a dielectric layer onto a semiconductor
This invention relates to processes useful for fabricating electronic devices, more particularly to a process for laminating a layer of dielectric material onto a semiconductor.
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6979474 |
Heat treatment method, heat treatment apparatus and treatment system
When a substrate coated with a coating solution which oxidizes at high temperatures is heat-treated, an oxygen concentration of a treatment atmosphere is lowered when the temperature is low. Next,...
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6980418 |
Method and apparatus for controlling the temperature of electronic device enclosures
An electronic device housing comprising a device enclosure with electronic components mounted inside the enclosure is disclosed. Mounted between the electronic device housing and the device...
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6969682 |
Single workpiece processing system
A system for processing wafers includes a robot moveable within an enclosure to load and unload workpieces into and out of workpiece processors. A processor includes an upper rotor having alignment...
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6969538 |
Method for heat processing of substrate
The present invention relates to a method for heat processing a substrate. After a coating film is formed on the substrate, the substrate is baked at a predetermined high temperature. The baking...
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6969621 |
Contamination distribution apparatus and method
Embodiments of the invention include an apparatus for uniformly contaminating samples. The apparatus includes a housing that contains a rotatable carousel for the holding samples. A drive element...
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6955914 |
Method for making a molecularly smooth surface
A method is provided for making a molecularly smooth surface, preferably on an electrode of an assay chip. This is desirable because it allows molecules, preferably oligonucloetides, to attach to...
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6951826 |
Silicon carbide deposition for use as a low dielectric constant anti-reflective coating
The present invention generally provides a process for depositing silicon carbide using a silane-based material with certain process parameters that is useful for forming a suitable ARC for IC...
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6949472 |
Method for high kinetic energy plasma barrier deposition
A novel method for depositing a barrier layer on a single damascene, dual damascene or other contact opening structure. The method eliminates the need for pre-cleaning argon ion bombardment of the...
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6949471 |
Method for fabricating poly patterns
A method of fabricating polysilicon patterns. The method includes depositing polysilicon on a substrate. The polysilicon may be doped or pre-doped depending upon the application. A mask layer is...
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6949465 |
Preparation process for semiconductor device
According to this invention, residues generated after selectively removing a low-dielectric-constant film such as SiOC can be effectively removed without damage on an insulating film or metal film....
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6946403 |
Method of making a MEMS electrostatic chuck
The present invention is directed to a method of forming a clamping plate for a multi-polar electrostatic chuck. The method comprises forming a first electrically conductive layer over a...
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6943122 |
Vacuum processing system for producing components
The present invention provides a vacuum processing system for creating processed substrates having a domed lid on at least the transfer chamber. The lid may be provided either convex to the...
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6939813 |
Apparatus for improved low pressure inductively coupled high density plasma reactor
A plasma reactor comprises an electromagnetic energy source coupled to a radiator through first and second variable impedance networks. The plasma reactor includes a chamber having a dielectric...
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6936547 |
Gas delivery system for deposition processes, and methods of using same
The present invention is generally directed to a novel gas delivery system for various deposition processes, and various methods of using same. In one illustrative embodiment, a deposition tool...
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6936503 |
Method for manufacturing a MOS transistor
In a pretreatment process, a silicon oxide film ( 13 ) with nitrogen content is formed on a semiconductor substrate ( 10 ). In a segregation process executing heat treatment in an in-oxidiz-able...
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6919270 |
Method of manufacturing silicon carbide film
A method for forming a silicon carbide film on a semiconductor substrate by plasma CVD includes (a) introducing a raw material gas containing silicon, carbon, and hydrogen and an inert gas into a...
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6916749 |
Method of manufacturing semiconductor device
A multilayer structure which provides for optimization of a configuration of a patterned photoresist is designed. A multilayer structure ( 20 ) includes polysilicon ( 10 ), a silicon oxide film (...
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6914011 |
Film deposition system and method of fabricating semiconductor device employing the film deposition system
A film deposition system comprises a chamber having an internal space, a support part provided in the internal space of the chamber for supporting a substrate, a gas supply part supplying gas to...
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6911401 |
Method for CVD process control for enhancing device performance
A method implemented by one or more processors, including receiving first information relating a plurality of flow rates of a species to corresponding concentrations of the species within films...
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6911352 |
Semiconductor device and method of manufacturing same
A semiconductor device which is capable of suppressing short-circuit currents caused to flow through defective areas in a first semiconductor layer can be manufactured at high yield, by utilizing a...
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6911400 |
Nonlithographic method to produce self-aligned mask, articles produced by same and compositions for same
A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having...
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6908781 |
Method and apparatus for protecting wiring and integrated circuit device
A method and apparatus for protecting a conductor in an integrated circuit. A protective covering can be disposed over a conductor for a substantial length along the conductor while allowing a...
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6905978 |
Method of forming interlayer insulation film
A method of forming an interlayer insulation film on a semiconductor substrate using plasma CVD includes introducing a source gas into a reaction chamber, applying radio-frequency power after the...
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6903028 |
Soft-landing etching method using doping level control
The method of the present invention comprises the steps of: (a) laying on a prior layer, a first oxide layer doped in one form; (b) laying on said first oxide layer, a second oxide layer doped in a...
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6900144 |
Film-forming surface reforming method and semiconductor device manufacturing method
A film-forming surface reforming method includes the steps of bringing a gas or an aqueous solution containing ammonia, hydrazine, an amine, an amino compound or a derivative thereof into contact...
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6900132 |
Single workpiece processing system
A system for processing semiconductor wafers has process units on a deck of a frame. The process units and the deck have precision locating features, such as tapered pins, for precisely positioning...
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6891744 |
Configurable nanoscale crossbar electronic circuits made by electrochemical reaction
Configurable electronic circuits comprise arrays of cross-points of one layer of metal/semiconductive nanoscale lines crossed by a second layer of metal/semiconductive nanoscale lines, with a...
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6887719 |
Magnetoresistive random access memory (MRAM) cell patterning
A process that advantageously forms MRAM cells without the application of ion beam milling processes. Unlike conventional processes that rely on ion beam milling processes to remove materials from...
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6884737 |
Method and apparatus for precursor delivery utilizing the melting point depression of solid deposition precursors in the presence of supercritical fluids
A method for providing a precursor to a supercritical processing chamber is provided. The precursor in solid form is provided in an ampoule external to the supercritical processing chamber. A fluid...
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6884738 |
Manufacturing method of semiconductor device and substrate processing apparatus
According to the present invention, flatness of a thin film formed on a substrate is improved without generating particles and lowering productivity. A method of manufacturing a semiconductor...
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6881437 |
Methods and system for processing a microelectronic topography
Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, the methods may include...
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6881680 |
Low nitrogen concentration carbonaceous material and manufacturing method thereof
The present invention relates to a low nitrogen concentration carbonaceous material with a nitrogen concentration according to glow discharge mass spectrometry of 100 ppm or less, as well as a...
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6881681 |
Film deposition on a semiconductor wafer
Heating a reaction chamber or other apparatus in the absence of product wafers to a “curing” temperature above a deposition temperature between the deposition of a film on a first set of...
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6881683 |
Insulation film on semiconductor substrate and method for forming same
An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and...
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