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5858863 |
Fabrication system and method having inter-apparatus transporter
Disclosed is a fabricating system including a plurality of processing apparatuses connected to each other by means of an inter-apparatus transporter, wherein one group of semiconductor wafers are...
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5858881 |
Method of producing thin film
A method of producing a high-purity and high-quality thin film, wherein chlorine trifluoride is used as a cleaning gas for the purpose of lowering temperature at which a cleaning operation is...
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5856240 |
Chemical vapor deposition of a thin film onto a substrate
Vacuum CVD chambers are disclosed which provide a more uniformly deposited thin film on a substrate. The chamber susceptor mount for the substrate is heated resistively with a single coil firmly...
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5856241 |
Method of manufacturing semiconductor device
The present invention provides a method for reducing the size of a semiconductor chip to be manufactured and improving the precision of processing a fine resist pattern provided for manufacturing...
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5853607 |
CVD processing chamber
A process chamber is disclosed which provides a 360° circular gas/vacuum distribution over a substrate being processed. The substrate being processed is supported on a heated and optionally cooled...
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5834068 |
Wafer surface temperature control for deposition of thin films
A method for improving the characteristics of deposited thin films by improved control and stabilization of wafer surface temperatures. Further, the invention provides the ability to rapidly change...
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5824605 |
Gas dispersion window for plasma apparatus and method of use thereof
A gas dispersion window for a plasma etching or plasma deposition reactor including a housing having a chamber in which an article can be treated with plasma. The housing includes at least one...
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5817534 |
RF plasma reactor with cleaning electrode for cleaning during processing of semiconductor wafers
The invention is carried out in a plasma reactor for processing a semiconductor wafer, the plasma reactor having a chamber for containing a processing gas and having a conductor connected to an RF...
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5807792 |
Uniform distribution of reactants in a device layer
A method and apparatus for forming a multi-constituent device layer on a wafer surface are disclosed. The multi-constituent device layer is formed by flowing a first chemistry comprising a first...
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5789322 |
Low volume gas distribution assembly for a chemical downstream etch tool
An improved low-volume gas distribution assembly for a chemical downstream etch tool includes a focusing collar positioned within a process chamber and having a depending shroud in close proximity...
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5789309 |
Method and system for monocrystalline epitaxial deposition
A method for monocrystalline epitaxial deposition which reduces the occurrence of large area defects for chemical vapor depositions carried out at near atmospheric pressure. Reactant gas is passed...
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5783492 |
Plasma processing method, plasma processing apparatus, and plasma generating apparatus
A plasma processing method of performing plasma processing such as plasma film formation processing on a target object arranged in a processing vessel is disclosed. This method includes the first...
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5779925 |
Plasma processing with less damage
A method of manufacturing a semiconductor device including the steps of: (a) transporting a semiconductor wafer into a plasma process system, the semiconductor wafer having a semiconductor layer, a...
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5768592 |
Method and apparatus for managing profile data
A heuristic prediction method of generating profile information for compilers in a computer system that associates profile information to attribute-vectors of a source code derived from observation...
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5747362 |
Method of manufacturing a semiconductor device in which a layer of material is deposited on the surface of a semiconductor wafer from a process gas
A method of manufacturing a semiconductor device whereby a layer of material (6) is deposited on a surface (3) of a semiconductor wafer (4) from a process gas (5) in a reactor chamber (1) which is...
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5736195 |
Method of coating a thin film on a substrate
A method for coating a substrate with a relatively thin, uniform film of a fluid with a minimum of waste. A volume of fluid is produced and the size and velocity of the volume of fluid are selected...
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5736423 |
Method for depositing very thin PECVD SiO.sub.2 in 0.5 micron and 0.35 micron technologies
A very thin (less than 350 angstrom) layer of silicon dioxide (SiO 2 ) is produced using plasma-enhanced chemical vapor deposition (PECVD) by substantially increasing the time duration of pre-coat...
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5714406 |
Method for forming film on semiconductor substrate by thermal CVD method
A semiconductor substrate is supported on a lower electrode provided within a chamber. The semiconductor substrate is heated up to about 600° to 700° by radiation heat from a halogen lamp. While...
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5700725 |
Apparatus and method for making integrated circuits
An improved apparatus and method for the manufacture of integrated circuits is disclosed. At least three protrusions extend from the wafer support susceptor. The protrusions slightly electrically...
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5674786 |
Method of heating and cooling large area glass substrates
Glass substrates suitable for thin film processing can be batch heated to processing temperatures and batch cooled after processing by radiant heating and cooling in a vacuum chamber. The heating...
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5605866 |
Clamp with wafer release for semiconductor wafer processing equipment
An apparatus for releasably clamping a substrate to a support platform, or other support means, at a face of the substrate is described. In one embodiment, a retractable clamp holds a substrate...
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5601686 |
Wafer transport method
A wafer transport method including the steps of preparing a semiconductor process equipment having a transport chamber, a process chamber, an interface means for connecting the transport chamber to...
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5589421 |
Method of manufacturing annealed films
A chemical vapor deposition apparatus comprises a reaction chamber for annealing a silicon wafer, a transportation mechanism for transporting the silicon wafer to the reaction chamber, a detecting...
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5561087 |
Method of forming a uniform thin film by cooling wafers during CVD
A plurality of wafers are placed on a boat, and the boat is inserted into a reactor. The reactor is heated by a heater, thereby heating the inserted wafers. Then, air is supplied between the...
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5561071 |
DNA and DNA technology for the construction of networks to be used in chip construction and chip production (DNA-chips)
The invention relates to construction of specific molecular microcircuits by the use of double and single stranded nucleic acids and specific DNA-binding proteins.
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5534309 |
Method and apparatus for depositing particles on surfaces
A method of providing particle deposition on a semiconductor wafer or other surface first provides a flow of clean gas into a deposition chamber that purges the chamber prior to introduction of the...
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5516545 |
Coating processes and apparatus
Processes and apparatus for uniformly coating discrete substrates by application of a controlled volume of fluid per unit surface area of a substrate. In one aspect, the invention provides a...
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5492862 |
Vacuum change neutralization method
A vacuum processing method including the steps of generating plasma of a charge neutralizing medium by plasma generating means in a vacuum process chamber, and supplying the charge neutralizing...
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5491112 |
Method and arrangement for treating silicon plates
A method for treating a silicon plate, a so-called wafer, in a cold-wall reactor when using the so-called CVD-technique in order, among other things, to deposit substances on the silicon plate by...
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5455070 |
Variable rate distribution gas flow reaction chamber
A wafer processing reactor having an input manifold to enable control of a process gas flow profile over a wafer that is being processed. Both process gas relative concentrations and flow rates can...
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5387557 |
Method for manufacturing semiconductor devices using heat-treatment vertical reactor with temperature zones
A wafer(s) for producing semiconductor devices is subjected to heat treatment in a vertical thermal reactor, which is provided with an electric heating means setting a first temperature and another...
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5374594 |
Gas-based backside protection during substrate processing
A suitable inert gas such as argon or a mixture of inert and reactive gases such as argon and hydrogen is introduced onto the backside of wafers being processed in a CVD reactor during the...
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5327624 |
Method for forming a thin film on a semiconductor device using an apparatus having a load lock
A method for forming a thin film on a semiconductor substrate wherein the substrate is transferred between an auxiliary chamber having an inert atmosphere to a reaction chamber having a reactive...
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5308791 |
Method and apparatus for processing surface of semiconductor layer
An apparatus for processing the surface of an Si wafer includes a vacuum cleaning chamber in which said Si wafer is housed. He gas is supplied into the cleaning chamber and micro-wave and magnetic...
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5278104 |
Semiconductor wafer carrier having a dust cover
A semiconductor device support carrier used for a liquid phase process of a semiconductor device with a process liquid is disclosed. The semiconductor device support carrier comprises a support...
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5219613 |
Process for producing storage-stable surfaces of polished silicon wafers
Silicon wafers are first subjected to an oxidative treatment and subsequey to exposure to organosilicon compounds which contain at least one radical in the molecule which is hydrolyzably bound to...
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5203960 |
Method of operation of electron cyclotron resonance plasma source
A method is disclosed employing electron cyclotron resonant (ECR) heating to produce plasma for applications including but not limited to chemical vapor deposition and etching. A magnetic field is...
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5194406 |
Installation for transport and processing under a pulsating double-floating condition
Installation (10) for processing of successive wafers (26) under pulsating double-floating condition within processing gaps (174) and (176) above and underneath such wafer of an at least almost...
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5147823 |
Method for forming an ultrafine metal pattern using an electron beam
In a method for forming a pattern, by selectively irradiating a charged particle beam onto a substrate in an atmosphere containing a raw material gas, a resist pattern comprising a material which...
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5089289 |
Method of forming thin films
Thin films having controlled properties are formed on a substrate by a method comprising the steps of (a) placing the substrate on a support member within a reaction chamber capable of being...
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4925701 |
Processes for the preparation of polycrystalline diamond films
A process for the preparation of continuous polycrystalline diamond films which comprises applying to a substrate diamond powder in an amount of from about one particle per ten square microns to...
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4864581 |
Semiconductor structures and a method of manufacturing semiconductor structures
A semiconductor structure and methods for making it, for use in opto-electronic devices, employs only MOVPE growth steps. The structure is based on a mesa having substantially non-reentrant sides....
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4678536 |
Method of photochemical surface treatment
A method of photochemically treating a surface of a material is disclosed which includes a step of introducing a reaction gas into a reaction chamber having a substrate therein, to make the...
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4668334 |
Method and apparatus for applying a layer of photosensitive material to a semiconductor wafer
In a method of applying a layer of photosensitive material to a semiconductor material wafer (3), the photosensitive material is applied in liquid form to the wafer and the wafer is then rotated in...
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4667076 |
Method and apparatus for microwave heat-treatment of a semiconductor water
The present invention relates to a method of heat-treating a semiconductor wafer by utilizing an electromagnetic wave. The wafer is floated by the blast of a gas and is held in a non-contacting...
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4615909 |
Method of manufacturing semiconductor devices, in which material is deposited from a reaction gas, and apparatus for carrying out such a method
A number of wafer slices of semiconductor material are heated in a reactor tube arranged inside a furnace tube with the reactor tube having openings through which a reaction gas is passed for...
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4601914 |
Method for fabricating a semiconductor gas sensor
A method for fabricating a solid state semiconductor gas sensor and the semiconductor sensor itself for use in equipment detecting small amounts of H 2 S. The method of sensor fabrication...
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4597989 |
Method of depositing silicon films with reduced structural defects
Silicon films in integrated circuits are mass produced with reduced structural defects by passing a reactant gas which contains silicon over a batch of wafers in a quartz chamber to deposit a...
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4544446 |
VLSI chemical reactor
A VLSI chemical reactor includes a fluid flow guide spaced from the corresponding substrate in the form of a wafer for significantly reducing contamination in the processing of semiconductor...
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4540466 |
Method of fabricating semiconductor device by dry process utilizing photochemical reaction, and apparatus therefor
Photochemical technique is applied, in a unique manner, to the so-called dry process intended for etching a substrate or for deposition thereon in the presence of a gas supplied into a chamber...
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