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6066573 |
Method of producing dielectric film
A surface of a substrate is coated with a coating agent to form a coating film. The coating agent contains a material capable of generating moisture (for example, hydrogen-silsesquioxane or...
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6063705 |
Precursor chemistries for chemical vapor deposition of ruthenium and ruthenium oxide
A method is provided for forming a film of ruthenium or ruthenium oxide on the surface of a substrate by employing the techniques of chemical vapor deposition to decompose precursors of ruthenium...
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6063440 |
Method for aligning a wafer
A method for aligning a wafer on a support member within a vacuum chamber includes increasing the pressure within the vacuum chamber to at least about 1 Torr before aligning the wafer. The wafer is...
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6063439 |
Processing apparatus and method using solution
A processing apparatus using solution comprises a rotary table which rotates while holding a substrate thereon, in the processing chamber provided in the casing, a supply mechanism for supplying a...
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6059939 |
Method for high density edge mounting of chips
An integrated circuit package derives increased mechanical robustness and electrical reliability consistent with increased heat dissipation capacity by edge bonding of integrated circuit chips onto...
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6060405 |
Method of deposition on wafer
A method of deposition with 4-PASS which is performed by a WJ-1000 or WJ-999 machine. Before each deposition is performed, it is necessary to turn the wafer an angle of 90° in the same direction....
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6057249 |
Method for improving optical proximity effect in storage node pattern
A semiconductor mask has storage node patterns (101a, 101b, 101c, 101d) defining a first region and a second region. Serifs (10) are provided adjacent comers of the storage node patterns for...
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6056864 |
Electropolishing copper film to enhance CMP throughput
In-laid metal, e.g., copper or copper alloy, contacts and conductive routing patterns are formed in recesses in the surface of a substrate by a damascene-type process, comprising depositing a layer...
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6054398 |
Semiconductor interconnect barrier for fluorinated dielectrics
A method is provided for forming tantalum adhesion/barrier layers on semiconductor channels or in vias in low dielectric constant, fluorinated dielectric layers. The dielectric layers are...
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6051509 |
Semiconductor integrated circuit manufacturing method and device
A manufacturing method produces a semiconductor IC device which can maintain a low power consumption for electronic circuits and form gate-isolation layers of different thicknesses without...
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6037272 |
Apparatus and method for low pressure chemical vapor deposition using multiple chambers and vacuum pumps
An apparatus for low pressure chemical vapor deposition for fabricating a semiconductor device comprises a group of reaction chambers, a group of high-vacuum pumps connected to the reaction...
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6037241 |
Apparatus and method for depositing a semiconductor material
Apparatus (12, 12a) and a method for depositing a semiconductor material on a glass sheet substrate (G) utilizes a distributor (22) including a heated permeable member (24) through which a carrier...
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6033997 |
Reduction of black silicon in semiconductor fabrication
Reduction of black silicon is achieved by providing a dielectric layer in at least the bead region of the wafer before the formation of a hard etch mask.
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6030667 |
Apparatus and method for applying RF power apparatus and method for generating plasma and apparatus and method for processing with plasma
On the bottom of a chamber, there is provided a lower electrode for supporting an object to be processed with intervention of an insulator. A first RF power source applies RF power to a multiple...
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6022811 |
Method of uniform CVD
A CVD method including the steps of: setting a semiconductor wafer on a heating stage within a CVD reaction chamber; and emitting CVD reaction gas towards at least the central major region of the...
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6010969 |
Method of depositing films on semiconductor devices by using carboxylate complexes
A method of forming a film on a substrate using chemical vapor deposition techniques and carboxylate complexes. The complexes and method are particularly suitable for the preparation of...
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6004885 |
Thin film formation on semiconductor wafer
A starting gas feeding apparatus for forming a gaseous starting material from a liquid starting material and feeding the gaseous starting material into a reaction chamber of a CVD apparatus,...
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6001267 |
Plasma enchanced chemical method
A plasma enhanced chemical processing reactor and method. The reactor includes a plasma chamber including a first gas injection manifold and a source of electromagnetic energy. The plasma chamber...
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6000947 |
Method of fabricating transistor or other electronic device using scanning probe microscope
A scanning probe microscope is used to fabricate a gate or other feature of a transistor by scanning a silicon substrate in which the transistor is to be formed. An electric field is created...
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6001746 |
Method of forming an undoped silicate glass layer on a semiconductor wafer
The present invention provides a method of forming an undoped silicate glass layer on a semiconductor wafer by performing a high density plasma chemical vapor deposition process. The semiconductor...
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5998304 |
Liquid phase deposition method for growing silicon dioxide film on III-V semiconductor substrate treated with ammonium hydroxide
A liquid phase deposition method involves the use of a supersaturated hydrofluosilicic acid aqueous solution for growing a silicon dioxide film at low temperature (30° C.-50° C.) on a III-V...
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5997649 |
Stacked showerhead assembly for delivering gases and RF power to a reaction chamber
A reaction chamber for chemical vapor deposition of a material layer onto a substrate using a process gas comprises a chamber body having an inner wall which defines a process space for containing...
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5998303 |
Semiconductor device making method
A method for making a semiconductor device includes: a step for preparing a substrate; a step for forming a wiring layer on the substrate; a step for loading the substrate onto a substrate...
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5994240 |
Method for cleaning semiconductor wafers
A low temperature in-situ precleaning process for a semiconductor surface is disclosed. Ambient reactant gases, such as NF 3 and GeH 4 , having a partial pressure of between approximately 10 -8 ...
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5985769 |
Method of forming an interlayer insulating film
A method of forming an uniform interlayer insulating film on a substrate of large size is provided. A semiconductor substrate is prepared which has an interconnection pattern formed thereon. A...
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5981403 |
Layered silicon nitride deposition process
A semiconductor device process for forming a multilayered nitride structure. The nitride is used as either isolation or as part of a dielectric structure. The deposition rate for the nitride is...
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5970381 |
Method for fabricating organic thin film
A method is provided that produces a good, strong organic monomolecular film having its atoms arranged in a three-dimensionally ordered manner by cleaving a III-V group compound semiconductor...
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5970382 |
Process for forming coatings on semiconductor devices
A process for forming coatings and films from a gaseous reactant onto a semiconductor device is disclosed. The process includes preheating a gas to a temperature so that the gas will immediately...
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5968592 |
Multi step coat
The objective of the invention is to provide a resist material deposition method which allows reliable deposition using a small amount of resist material without unevenness. The method of the...
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5968593 |
Semiconductor manufacturing apparatus
A semiconductor manufacturing apparatus including a heating device; a reaction tube disposed within the heating device, the reaction tube having a gas inlet portion and an exhaust portion parted...
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5970383 |
Method of manufacturing a semiconductor device with improved control of deposition layer thickness
The uniformity of the thickness of a deposition layer, generated by a chemical vapor deposition (CVD) process, on a semiconductor wafer is enhanced by providing an undercoating on the deposition...
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5969409 |
Combined in-situ high density plasma enhanced chemical vapor deposition (HDPCVD) and chemical mechanical polishing (CMP) process to form an intermetal dielectric layer with a stopper layer embedded therein
A wafer planarization process which utilizes combined high density plasma chemical vapor deposition (HDP-CVD) process and chemical mechanical polishing (CMP) process is disclosed. This process...
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5952045 |
Method and apparatus for improved coating of a semiconductor wafer
Disclosed is a spin coating apparatus and method for coating a semiconductor wafer of known diameter with a thin and substantially uniform coating of a solution. The apparatus comprises a...
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5946550 |
Self-assembled semiconductor and method of making same
A method for producing a ultrathin semiconducting film, utilizes a substrate with a reactive functionalized surface which is contacted with a reactant compound of a divalent and trivalent chelating...
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5942041 |
Non-sticking semi-conductor wafer clamp and method of making same
A clamp used in clamping semi-conductor wafers during processing operations permits ready release of the wafer and avoids adherence of the clamp to materials deposited onto the wafer which...
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5940723 |
Heteroepitaxial growth of III-V materials
The specification describes a process for growing device quality III-V heteroepitaxial layers without the use of buffer layers, i.e. largely defect free layers with thicknesses greater than 50...
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5925411 |
Gas-based substrate deposition protection
A platen supports a substrate on an interior platen region during the deposition of materials such as tungsten, metal nitrides, other metals, and silicides in a chemical vapor deposition ("CVD")...
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5926743 |
Process for chlorine trifluoride chamber cleaning
A method and apparatus for removing particles and residue that build up inside a substrate processing system during a substrate processing operation, without overetching system components, is...
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5920797 |
Method for gaseous substrate support
A method of reducing stress on a substrate in a thermal processing chamber. The method includes the steps of supporting a first portion of a substrate by means of contacting the same such that a...
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5904573 |
PE-TEOS process
An improvement in the properties of etch rate, mechanical stress, and chemical resistance of silicon layers obtained by plasma-enhanced chemical vapor deposition from mixtures of reactive gases...
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5904523 |
Process for device fabrication in which a layer of oxynitride is formed at low temperatures
A process for forming a silicon oxynitride layer in an N 2 atmosphere is disclosed. The silicon oxynitride layer is formed by heating a silicon substrate in an N 2 atmosphere for a period of time...
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5905117 |
Low dielectric resin composition
A low dielectric resin composition comprising the following components (a) and (b), and the dielectric constant of a coating film formed by this composition being at most 3: (a) a resin having...
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5904574 |
Process of making semiconductor device and improved semiconductor device
A semiconductor device and a method for making the semiconductor device is provided. The semiconductor device has a silicon surface of a silicon substrate from which particles and metallic...
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5899751 |
Method for forming a planarized dielectric layer
A method for forming a planarized dielectric layer comprising the steps of first dissolving hydrogen silsesquoxane (HSQ) in a solvent to form a solution, then spreading the solution over a silicon...
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5900064 |
Plasma process chamber
A process chamber (14) for processing a substrate (12) in a plasma, comprises a support for supporting the substrate having a surface with a perimeter (32). A gas distributor is provided for...
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5895530 |
Method and apparatus for directing fluid through a semiconductor processing chamber
A method and apparatus for directing a process gas through a wafer processing apparatus, such as a vapor deposition chamber is provided. The apparatus comprises a pumping plate (4) defining a...
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5893760 |
Method of heat treating a semiconductor wafer to reduce stress
A susceptor in a semiconductor wafer heat treatment apparatus holds a wafer such that the wafer is made flat at a heat treatment temperature. In particular, the susceptor is constituted by an...
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5885904 |
Method to incorporate, and a device having, oxide enhancement dopants using gas immersion laser doping (GILD) for selectively growing an oxide layer
A method for forming a uniform and reliable oxide layer on the surface of a semiconductor substrate using projection gas immersion laser doping (P-GILD) is provided. A semiconductor substrate is...
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5874350 |
Process for preparing a functional thin film by way of the chemical reaction among active species
A method for forming a functional silicon- or germanium-containing amorphous deposited film on a substrate which comprises a film-forming chamber having a film-forming space, a substrate holder and...
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5863842 |
Vacuum exhausting apparatus, semiconductor manufacturing apparatus, and vacuum processing method
A vacuum exhausting apparatus, a semiconductor manufacturing apparatus, and a vacuum processing method in which high performance semiconductor device can be manufactured with high stability and...
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