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6335281 |
Deposited film forming process
In a deposited film forming process or apparatus, a deposited film is formed on a film-forming substrate by reduced-pressure vapor phase growth. The film-forming substrate is set on an auxiliary...
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6333276 |
Semiconductor device and method of forming semiconductor device
A semiconductor device according to the present invention includes insulating branches which are formed as an interlayer insulating film on a semiconductor substrate. The interlayer insulating film...
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6333246 |
Semiconductor device manufacturing method using electrostatic chuck and semiconductor device manufacturing system
A semiconductor device manufacturing method comprises the steps of placing a substrate to be processed on an electrostatic chuck on a substrate stand in a process chamber, and applying a negative...
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6333277 |
Method for reducing non-homogenous density during forming process of borophosphosilicate glass layer
A method for reducing non-homogenous density during forming process of borophosphosilicate glass layer, at least includes following basic steps: delivers an oxygen gas through a gas pipeline into a...
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6331493 |
Process for making low dielectric constant dielectric films
A low dielectric constant material and a process for controllably reducing the dielectric constant of a layer of such material is provided and comprises the step of exposing the layer of dielectric...
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6329295 |
Semiconductor device capable of having amorphous carbon fluoride film of low dielectric constant as interlayer insulation material and method of manufacturing the same
A metal film with high melting point containing such nitrogen as titanium nitride is disposed on the interface between an amorphous carbon fluoride film and a metal. A structure is obtained from...
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6326315 |
Low temperature rapid ramping anneal method for fabricating layered superlattice materials and making electronic devices including same
A liquid precursor for forming a layered superlattice material is applied to an integrated circuit substrate. The precursor coating is annealed in oxygen using a rapid ramping anneal ("RRA")...
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6326319 |
Method for coating ultra-thin resist films
There is provided a method for applying a lower viscosity coating liquid onto a semiconductor wafer substrate so as to prevent adhesion loss and to maintain low defect level characteristics. This...
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6323140 |
Method of manufacturing semiconductor wafer
Disclosed is a method for manufacturing a semiconductor wafer having an epitxial layer on a surface thereof, by the steps of forming a pritective oxide film on a surface of a semiconductor wafer...
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6323113 |
Intelligent gate-level fill methods for reducing global pattern density effects
The present invention provides methods for intelligently filling a gate layer with dummy fill patterns to produce a target pattern density. A gate layout defining gate areas on the gate layer is...
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6319855 |
Deposition of nanoporous silic films using a closed cup coater
A process for forming a uniform nanoporous dielectric film on a substrate. The process includes horizontally positioning a flat substrate within a cup; depositing a liquid alkoxysilane composition...
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6316350 |
Post fuse slag etch
A post laser blown fuse slag etch for a copper fuse (30) with a barrier metal liner (18), (e.g., Ta x N y , Ta, Ti, Ti x N y ). After the fuse (30) is blown, copper and copper complexes may be...
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6313044 |
Methods for forming a spin-on-glass layer
There is provided a method for forming a SOG layer, which can enhance flatness. In the method, the SOG layer is spin-coated on a wafer and the SOG solvent is spread in a closed receptacle...
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6309982 |
Method for minimizing copper diffusion by doping an inorganic dielectric layer with a reducing agent
A method for reducing copper diffusion into an inorganic dielectric layer adjacent to a copper structure by doping the inorganic dielectric layer with a reducing agent (e.g. phosphorous, sulfur, or...
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6306764 |
Batch type heat-treating method
In a batch type vertical heat-treating method, first, product wafers and dummy wafers are set to be stacked on an upstream side of a flow of a process gas, in heat treatment, within main holding...
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6306776 |
Catalytic breakdown of reactant gases in chemical vapor deposition
Methods and apparatus for depositing films on semiconductor wafers in chemical vapor deposition processes employing a catalyst to provide one or more activated gases to reduce the surface...
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6306777 |
Flash memory having a treatment layer disposed between an interpoly dielectric structure and method of forming
A flash memory structure and fabrication process whereby stacks of a first poly-crystalline or of an amorphous silicon material (polysilicon), having a bottom layer member of an interpoly...
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6303466 |
Method of manufacturing a semiconductor device
A method for manufacturing a semiconductor device capable of improving properties during etching without degrading original properties of a doped oxide film as a hard mask includes a step of baking...
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6303519 |
Method of making low K fluorinated silicon oxide
A method of forming a fluorinated silicon oxide layer or an FSG film having a dielectric constant less than 3.2 is disclosed. The method includes introducing a fluorine-rich gas into a reacting...
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6303516 |
Method for forming dot element
A Rat IgG antibody film, formed on a p-type Si substrate, is selectively irradiated with ultraviolet rays, thereby leaving part of the Rat IgG antibody film, except for a region deactivated with...
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6303393 |
Method of doping barium titanate ferroelectric oxide
Optical waveguides exhibiting non-linear and/or electro-optic properties comprise a rare earth doped barium titanate thin film as an optical working medium. The thin film is metalorganic chemical...
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6303518 |
Methods to improve chemical vapor deposited fluorosilicate glass (FSG) film adhesion to metal barrier or etch stop/diffusion barrier layers
An improved CVD process, preferably a PECVD process, for forming a low-dielectric-constant insulating material on a semiconductor substrate, or on and/or under a metal barrier, or etch stop layer...
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6303517 |
Fast deposition on spherical-shaped integrated circuits in non-contact CVD process
An apparatus and method for depositing thin films on the surface of a device such as a spherical shaped devices. The apparatus includes an enclosure containing a plurality of apertures and a...
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6300167 |
Semiconductor device with flame sprayed heat spreading layer and method
A semiconductor device having a heat spreading layer (18,118) of material deposited by flame spraying on a back surface of the semiconductor die (12,112). The semiconductor die (12,112) has a...
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6294482 |
Method of forming an insulating layer pattern in a liquid crystal display
A method of forming an insulating layer pattern in a liquid crystal display which enables the formation of an insulating layer pattern on a substrate under a low temperature without the need of...
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6294479 |
Film forming method and apparatus
A method and apparatus for radiation of ions from an ion source 4 onto a surface of an objective substrate T and vacuum evaporation of a predetermined material from an evaporation source 5 onto the...
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6291362 |
Method of fabricating dielectric layer and fluorescent film for plasma display device
A method of fabricating a dielectric layer for a plasma display device that is suitable for forming the dielectric layer through a simple process and improving a characteristic of the dielectric...
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6287635 |
High rate silicon deposition method at low pressures
A method for high rate silicon deposition at low pressures, including a method of operating a CVD reactor having a high degree of temperature and gas flow uniformity, the method of operation...
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6287986 |
Sputtering film forming method, sputtering film forming equipment, and semiconductor device manufacturing method
There is provided an RF sputtering film forming method of forming a compound film having a stable composition by use of stable plasma with a broad process window to thus facilitate composition...
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6287889 |
Diamond thin film or the like, method for forming and modifying the thin film, and method for processing the thin film
An improved gas phase synthesized diamond, CBN, BCN, or CN thin film having a modified region in which strain, defects, color and the like are reduced and/or eliminated. The thin film can be formed...
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6287984 |
Apparatus and method for manufacturing semiconductor device
A loading area capable of forming a sealed space in co-operation with a reaction chamber is provided. In a state in which the inner space of the reaction chamber is separated from the inner space...
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6284673 |
Method for providing uniform gas delivery to substrates in CVD and PECVD processes
A showerhead diffuser apparatus for a CVD process has a first channel region having first plural independent radially-concentric channels and individual gas supply ports from a first side of the...
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6284050 |
UV exposure for improving properties and adhesion of dielectric polymer films formed by chemical vapor deposition
An ultraviolet-assisted chemical vapor deposition system for improving the adhesion, hardness, and thermal stability of organic polymer films deposited on semiconductor wafers is provided. The...
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6281125 |
Methods for preparing ruthenium oxide films
The present invention provides methods for the preparation of ruthenium oxide films from liquid ruthenium complexes of the formula (diene)Ru(CO) 3 wherein "diene" refers to linear, branched, or...
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6281139 |
Wafer having smooth surface
A method for preparing a wafer having a smooth surface is disclosed. The present invention includes the step of preparing a wafer base and a first material on the wafer base. The wafer base and...
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6274507 |
Plasma processing apparatus and method
A semiconductor processing apparatus includes a load chamber, an unload chamber, a common transfer chamber, a first process chamber, and a second process chamber, which are connected via gate...
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6271149 |
Method of forming a thin film on a substrate of a semiconductor device
A method of manufacturing a semiconductor device having a substrate with a thin film formed thereon, the method including washing the substrate with a washing liquid, removing the washing liquid...
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6270862 |
Method for high density plasma chemical vapor deposition of dielectric films
A plasma processing system for processes such as chemical vapor deposition includes a plasma processing chamber, a substrate holder for supporting a substrate within the processing chamber, a...
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6270687 |
RF plasma method
An RF plasma etch reactor having an etch chamber with electrically conductive walls and a protective layer forming the portion of the walls facing the interior of the chamber. The protective layer...
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6265324 |
Method of manufacturing semiconductor device and mask for forming thin film pattern
A mask 11 for vapor deposition is made of glass. Through-holes 15 are formed in the glass mask 11 so that they make a prescribed pattern on the surface of a semiconductor substrate 4. The...
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6261931 |
High quality, semi-insulating gallium nitride and method and system for forming same
A method for growing high-quality gallium nitride over a substrate is disclosed. The method comprises growing first layer with a high dislocation density over the substrate, a second layer having a...
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6258637 |
Method for thin film deposition on single-crystal semiconductor substrates
A method of preparing a surface for and forming a thin film on a single-crystal silicon substrate is disclosed. One embodiment of his method comprises forming an oxidized silicon layer (which may...
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6258733 |
Method and apparatus for misted liquid source deposition of thin film with reduced mist particle size
A mass flow controller controls the delivery of a precursor to a mist generator. The precursor is misted utilizing a venturi in which a combination of oxygen and nitrogen gas is charged by a corona...
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6251803 |
Method for forming a titanium dioxide layer
A method for forming a titanium dioxide layer is disclosed. The method includes the steps of providing a titanium-containing material, adding hydrogen chloride and nitric acid to the...
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6251798 |
Formation of air gap structures for inter-metal dielectric application
A method for the formation of an air gap structure for use in inter-metal applications. A metal pattern of metal lines is formed, a layer of Plasma Polymerized Methylsilane (PPMS) resist is...
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6248672 |
Method of producing a semiconductor device in a heating furnace having a reaction tube with a temperature-equalizing zone
In a method for producing a semiconductor device using a dual tube reactor, inert gas is fed into the vertical reaction-tube, a reaction gas is introduced into the vertical reaction-tube, the inert...
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6245648 |
Method of forming semiconducting materials and barriers
In a gaseous glow-discharge process for coating a substrate with semiconductor material, a variable electric field in the region of the substrate and the pressure of the gaseous material are...
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6245148 |
SOG dispensing system and its controlling sequences
The present invention relates to a SOG (Spin-On-Glass) dispensing system and its controlling sequences and, more particularly, to a SOG dispensing system allowing for continuous production and its...
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6242365 |
Method for preventing film deposited on semiconductor wafer from cracking
A method for preventing a target film deposited on a wafer in production from cracking after a post annealing procedure is disclosed. The method is performed by previously determining a crack limit...
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6239027 |
Method using a photoresist residue
An improved method for photoresist residue is described. The method is used for preventing a material layer from being damaged by the photoresist residue. A semiconductor substrate is provided. An...
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