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7410901 Submicron device fabrication  
A method for fabricating substrate material to include trenches and unreleased beams with submicron dimensions includes etching a first oxide layer on the substrate to define a first set of voids...
7410865 Method for fabricating capacitor of semiconductor device  
Disclosed herein is a method for fabricating a capacitor of a semiconductor device. The method comprises the steps of forming an interlayer insulating film on a semiconductor substrate, forming...
7375028 Method for manufacturing a semiconductor device  
A semiconductor device may be manufactured by a method that includes forming an etch stop layer on a semiconductor substrate, sequentially forming a first interlayer insulating layer, a first...
7371695 Use of TEOS oxides in integrated circuit fabrication processes  
A method for manufacturing a low temperature removable silicon dioxide hard mask for patterning and etching is provided, wherein tetra-ethyl-ortho-silane (TEOS) is used to deposit a silicon dioxide...
7368395 Method for fabricating a nano-imprinting mold  
An imprinting apparatus and method of fabrication provide a mold having a pattern for imprinting. The apparatus includes a semiconductor substrate polished in a [ 110 ] direction. The semiconductor...
7364666 Flexible circuits and method of making same  
Disclosed is a method for making flexible circuits in which portions of a tie layer are removed by etching the underlying polymer. Also disclosed are flexible circuits made by this method.
7358196 Wet chemical treatment to form a thin oxide for high k gate dielectrics  
Described herein are methods of forming a thin silicon dioxide layer having a thickness of less than eight angstroms on a semiconductor substrate to form the bottom layer of a gate dielectric. A...
7338610 Etching method for manufacturing semiconductor device  
A wafer having a dielectric layer and an electrode partially protruding from the top surface of the dielectric layer is provided. The dielectric layer is etched with a chemical solution such as...
7329616 Substrate processing apparatus and substrate processing method  
A substrate processing apparatus and a substrate processing method are provided wherein an oxide film which is thinner than the conventional films can be formed with uniform thickness when forming...
7312161 Advanced process control for low variation treatment in immersion processing  
The variability of immersion processes for treatment of semiconductor devices can be significantly lowered by initiating the termination of a treatment process according to a predetermined...
7312159 Compositions for dissolution of low-k dielectric films, and methods of use  
An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon...
7307026 Method of forming an epitaxial layer for raised drain and source regions by removing contaminations  
According to the present invention, a wet chemical oxidation and etch process cycle allows efficient removal of contaminated silicon surface layers prior to the epitaxial growth of raised source...
7297639 Methods for etching doped oxides in the manufacture of microfeature devices  
Methods for selectively etching doped oxides in the manufacture of microfeature devices are disclosed herein. An embodiment of one such method for etching material on a microfeature workpiece...
7294577 Method of manufacturing a silicide layer  
There is provided a method of manufacturing semiconductor device comprising removing an organic substance from a semiconductor surface having an oxide film thereon, the semiconductor surface being...
7259100 Nanoparticles and method for making the same  
A method for making nanoparticles, nanoparticle inks and device layers therefrom is disclosed. In accordance with the present invention, nanoparticles are isolated from a composite material that is...
7259078 Method for forming isolation layer in semiconductor memory device  
Disclosed herein is a method for forming an isolation film of a semiconductor memory device. According to the disclosure, in a pre-treatment cleaning process performed before a tunnel oxide film is...
7255801 Deep submicron CMOS compatible suspending inductor  
A new method is provided for the creation of an inductor. Layers of pad oxide, a thick layer of dielectric and an etch stop layer are successively created over the surface of a substrate. The...
7253114 Self-aligned method for defining a semiconductor gate oxide in high voltage device area  
A method is provided for forming at least three devices with different gate oxide thicknesses and different associated operating voltages, in the same integrated circuit device. The method includes...
7238620 System and method for providing a uniform oxide layer over a laser trimmed fuse with a differential wet etch stop technique  
A system and method is disclosed for using a differential wet etch stop technique to provide a uniform oxide layer over a metal layer in a laser trimmed fuse. A layer of boron doped oxide with a...
7235495 Controlled growth of highly uniform, oxide layers, especially ultrathin layers  
The present invention relates to methods of making oxide layers, preferably ultrathin oxide layers, with a high level of uniformity. One such method includes the steps of forming a substantially...
7235494 CMP cleaning composition with microbial inhibitor  
An antimicrobial cleaning composition and methods for cleaning semiconductor substrates, particularly after chemical mechanical planarization or polishing, are provided. In one embodiment, the...
7226871 Method for forming a silicon oxynitride layer  
A method for forming a silicon oxynitride layer, suitable to be used in the production of semiconductor devices, e.g. poly-silicon thin film transistors, is provided. A plasma surface treatment is...
7196013 Capping layer for a semiconductor device and a method of fabrication  
Numerous embodiments of a method and apparatus for a capping layer are disclosed. In one embodiment, a method of forming a capping layer for a semiconductor device comprises forming one or more...
7192883 Method of manufacturing semiconductor device  
The present invention relates to a method of manufacturing a semiconductor device. A minute pattern is formed using a hard mask film of a series of a nitride film as an etch mask. Before a hard...
7192860 Highly selective silicon oxide etching compositions  
Silicon oxide etching solutions containing the product of at least one bifluoride source compound dissolved in a solvent consisting of at least one carboxylic acid, and further comprising from...
7189628 Fabrication of trenches with multiple depths on the same substrate  
Dual trench depths are achieved on the same wafer by forming an initial trench having a depth corresponding to the difference in final depths of the shallow and deep trenches. A second mask is used...
7189623 Semiconductor processing method and field effect transistor  
A method of forming a transistor gate includes forming a gate oxide layer over a semiconductive substrate. Chlorine is provided within the gate oxide layer. A gate is formed proximate the gate...
7186657 Method for patterning HfO2-containing dielectric  
A wafer has a trench, a STI layer formed in the trench, an HfO2-containing gate dielectric covering the wafer and the STI layer, a gate electrode formed on the HfO2-containing gate dielectric, and...
7186649 Submicron semiconductor device and a fabricating method thereof  
A method of forming a pattern finer than an existing pattern in a semiconductor device using an existing light source and a hard mask, and a method of removing the hard mask which is used as an...
7183226 Method of forming a trench for use in manufacturing a semiconductor device  
A method for use in manufacturing a semiconductor device includes forming a photoresist pattern on a substrate, performing first etching process in which an initial trench is formed using the...
7176142 Method of manufacturing trench structure for device  
A porous low-k film, a sacrificial film that can be dissolved in a pure water, an antireflection film and a resist film are successively formed on a dielectric film on a wafer and subsequently...
7172971 Semiconductor device having a contact window including a lower with a wider to provide a lower contact resistance  
Semiconductor devices having a contact window and fabrication methods thereof are provided. A lower dielectric layer, conductive patterns and an upper dielectric layer are formed sequentially on a...
7160816 Method for fabricating semiconductor device  
The present invention relates to a method for fabricating a semiconductor device. In more detail of the aforementioned method, a first mask layer covering a cell region is formed on an insulation...
7160815 Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations  
A method and composition for removing silicon-containing sacrificial layers from Micro Electro Mechanical System (MEMS) and other semiconductor substrates having such sacrificial layers is...
7153729 Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same  
There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. A catalytic element for facilitating crystallization of an...
7138314 Method of manufacturing flash memory device  
Disclosed is a method of manufacturing a flash memory device using a STI process. Isolation films of a projection structure becomes isolation films of a nipple structure by means of a slant ion...
7132370 Method for selective removal of high-k material  
The present invention relates to a method for selectively removing a high-k material comprising providing a high-k material on a semiconductor substrate, and contacting the high-k material with a...
7129184 Method of depositing an epitaxial layer of SiGe subsequent to a plasma etch  
A method of preparing a silicon layer or substrate surface for growing an epitaxial layer of SiGe thereon. The process comprises removing native oxide from the surface of the silicon with an HF...
7119029 Method of oxidizing a silicon substrate and method of forming an oxide layer using the same  
In a method of forming an oxide layer, ozone is generated by reacting an oxygen gas having a first flow rate with a nitrogen gas having a second flow rate of more than about 1% of the first flow...
7119027 Method for manufacturing display device that includes supplying solution to the underside of a glass substrate  
Where a thin film formed on a glass substrate is etched with a solution containing a fluoride, insoluble residues formed by the reaction of the solution with glass substrate components adhere to...
7119006 Via formation for damascene metal conductors in an integrated circuit  
A method of fabricating an integrated circuit, having copper metallization formed by a dual damascene process, is disclosed. A layered insulator structure is formed over a first conductor ( 22 ),...
7115526 Method for wet etching of high k thin film at low temperature  
The present invention discloses an electrode structure of a light emitted diode and manufacturing method of the electrodes. After formed a pn junction of a light emitted diode on a substrate, a...
7098099 Semiconductor device having optimized shallow junction geometries and method for fabrication thereof  
The present invention provides, in one embodiment, a method of fabricating a semiconductor device ( 100 ). In one embodiment, the method includes growing an oxide layer 120 from a substrate 104,...
7094131 Microelectronic substrate having conductive material with blunt cornered apertures, and associated methods for removing conductive material  
A microelectronic substrate and method for removing conductive material from a microelectronic substrate. In one embodiment, the microelectronic substrate includes a conductive or semiconductive...
7084073 Method of forming a via hole through a glass wafer  
A method of forming a via hole through a glass wafer includes depositing a material layer on an outer surface of the glass wafer, the material layer having a selection ratio higher than that of the...
7084072 Method of manufacturing semiconductor device  
Disclosed is a method of manufacturing a semiconductor device. The method includes the steps of forming a gate in a cell region and a peripheral region of a substrate, depositing a buffer oxide...
7081417 Manufacturing method for electronic device and multiple layer circuits thereof  
To provide a planarization method which does not depend upon the size and the density of a wiring pattern and in which a reliable wiring system and a Josephson device can be formed and wiring...
7074725 Method for forming a storage node of a capacitor  
An improved method of manufacturing a capacitor on a semiconductor substrate is disclosed. A portion of an insulation film on a semiconductor substrate is etched to form a first opening in the...
7067425 Method of manufacturing flash memory device  
A method of manufacturing a flash memory device includes the steps of forming a nitride film on an entire surface of a trench by means of an annealing process to prevent implanted ions for...
7067390 Method for forming isolation layer of semiconductor device  
Disclosed is a method for forming an isolation layer of a semiconductor device. The method includes the steps of providing a semiconductor substrate having a predetermined isolation region,...
Matches 1 - 50 out of 446 1 2 3 4 5 6 7 8 9 >