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7625826 |
Method of manufacturing a semiconductor device and an apparatus for use in such a method
The invention relates to a method of manufacturing a semiconductor device ( 10 ) with a substrate ( 1 ) and a semiconductor body ( 11 ) which comprises at least one semiconductor element, wherein,...
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7625825 |
Method of patterning mechanical layer for MEMS structures
A method of making a microelectromechanical system (MEMS) device is disclosed. The method includes forming a stationary layer over a substrate. A sacrificial layer is formed over the stationary...
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7624742 |
Method for removing aluminum fluoride contamination from aluminum-containing surfaces of semiconductor process equipment
Described are methods of removing aluminum fluoride contaminants from aluminum, anodized aluminum, and sprayed ceramic surfaces. Hydrofluoric acid, long known to be effective at removing certain...
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7608547 |
Etchant and method for fabricating liquid crystal display using the same
Provided are an etchant used for a transparent conductive oxide layer and a method for fabricating a liquid crystal display (LCD) using the etchant. The etchant includes 2-5 wt % sulfuric acid,...
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7605091 |
Etchant for conductive materials and method of manufacturing a thin film transistor array panel using the same
The present invention provides a method for manufacturing a thin film transistor (TFT) array panel by forming a gate line having a gate electrode on an insulating substrate; sequentially depositing...
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7585782 |
Methods of forming semiconductor constructions, and methods of selectively removing metal-containing materials relative to oxide
The invention includes methods of selectively removing metal-containing copper barrier materials (such as tantalum-containing materials, titanium-containing materials and tungsten-containing...
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7585698 |
Thin film transistor having oxide semiconductor layer and manufacturing method thereof
A thin film transistor has a semiconductor thin film including zinc oxide, a protection film formed on entirely the upper surface of the semiconductor thin film, a gate insulating film formed on...
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7582570 |
Compositions for removal of processing byproducts and method for using same
A composition and methods for using the composition in removing processing byproducts is provided. The composition can be non-aqueous or semi-aqueous. The non-aqueous composition includes a...
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7563716 |
Polishing method
A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable...
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7553341 |
High power density supercapacitors with carbon nanotube electrodes
One embodiment of the present invention provides a process for fabricating an electrode for a capacitor using carbon nanotubes (CNTs), wherein the electrode comprises a metal substrate and a layer...
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7537943 |
Method of manufacturing a semiconductor integrated circuit device
A technique of manufacturing a semiconductor integrated circuit device is provided for reducing the possibility of attachment of foreign matter to a membrane probe when performing probe inspection...
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7531463 |
Fabrication of semiconductor interconnect structure
An etching process for selectively etching exposed metal surfaces of a substrate and forming a conductive capping layer over the metal surfaces is described. In some embodiments, the etching...
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7524752 |
Method of manufacturing semiconductor device
In a method of manufacturing a semiconductor device which method is made up of a process of forming a wiring groove using a hard mask, a metal hard mask 107 is used to form a wiring groove 111 ,...
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7521366 |
Manufacturing method of electro line for liquid crystal display device
A manufacturing method of an electro line for a liquid crystal display device includes depositing a barrier layer made of a conducting material on a substrate, depositing a copper layer (Cu) on the...
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7517811 |
Method for fabricating a floating gate of flash rom
A method for fabricating a floating gate of the flash memories is described. A pad oxide layer and a silicon nitride layer are formed sequentially on a substrate. A plurality of shallow trenches is...
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7517810 |
Reduced metal design rules for power devices
A process for etching a thick aluminum contact layer of a semiconductor wafer comprises the formation of a wet etch photoresist mask and the opening of a window in the mask, followed by a wet etch...
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7468316 |
Low fabrication cost, fine pitch and high reliability solder bump
A barrier layer is deposited over a layer of passivation including in an opening to a contact pad created in the layer of passivation. A column of three layers of metal is formed overlying the...
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7468105 |
CMP cleaning composition with microbial inhibitor
An antimicrobial cleaning composition and methods for cleaning semiconductor substrates, particularly after chemical mechanical planarization or polishing, are provided. In one embodiment, the...
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7456114 |
Microetching composition and method of using the same
The present invention is directed to a microetching composition comprising a source of cupric ions, acid, a nitrile compound, and a source of halide ions. Other additive, including organic...
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7439087 |
Semiconductor device and manufacturing method thereof
A technology for reducing distance between adjacent pixel electrodes to smaller than the limit set by conventional process margin and also preventing adjacent pixel electrodes from being short...
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7431861 |
Etchant, replenishment solution and method for producing copper wiring using the same
An etchant for copper and copper alloys, includes an aqueous solution containing: 14 to 155 g/liter of cupric ion source in terms of a concentration of copper ions; 7 to 180 g/liter of hydrochloric...
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7427569 |
Metal etching process and rework method thereof
A metal etching process is described. A substrate having a dielectric layer thereon is provided. An aluminum-copper alloy layer is formed on the dielectric layer. A hard mask layer is formed on the...
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7425278 |
Process of etching a titanium/tungsten surface and etchant used therein
An etchant which includes an aqueous solution of between about 30% and about 38% concentrated hydrogen peroxide, said percentages being by volume, based on the total volume of the solution; between...
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7422696 |
Multicomponent nanorods
Multicomponent nanorods having segments with differing electronic and/or chemical properties are disclosed. The nanorods can be tailored with high precision to create controlled gaps within the...
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7413976 |
Uniform passivation method for conductive features
The top surfaces of conductive features are treated with a treatment solution before forming a passivation layer over the conductive features. The treatment solution includes a cleaning solution...
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7402529 |
Method of applying cladding material on conductive lines of MRAM devices
A method of fabricating a cladding region for use in MRAM devices includes the formation of a conductive bit line proximate to a magnetoresistive memory device. The conductive bit line is immersed...
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7396773 |
Method for cleaning a gate stack
A method of making a semiconductor structure, comprises cleaning a gate stack with a cleaning solution. The gate stack comprises a gate layer, a metallic layer on the gate layer, and a etch-stop...
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7396708 |
Etching method for metal layer of display panel
An etching process of a metal layer of a display panel is provided. First, a substrate with at least one display panel region, a testing device region, and a non-device region is provided. Then, a...
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7390754 |
Method of forming a silicide
A method of stripping a remnant metal is disclosed. The remnant metal is formed on a transitional silicide of a silicon substrate. Firstly, a surface oxidation process is performed on the...
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7387970 |
Method of using an aqueous solution and composition thereof
A method for processing semiconductor wafers is disclosed. A semiconductor wafer is provided to a semiconductor processing stage where a block copolymer surfactant (BCS) is applied to the wafer...
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7384799 |
Method to avoid amorphous-si damage during wet stripping processes in the manufacture of MEMS devices
A method for forming a MEMS device using an amorphous silicon layer as a release layer includes etching superjacent films and using the amorphous silicon layer as an etch stop layer. The amorphous...
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7371333 |
Methods of etching nickel silicide and cobalt silicide and methods of forming conductive lines
The invention includes methods of etching nickel silicide and cobalt silicide, and methods of forming conductive lines. In one implementation, a substrate comprising nickel silicide is exposed to a...
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7368397 |
Method for monitoring edge bead removal process of copper metal interconnection
Disclosed is a method for monitoring an edge bead removal process for a copper metal interconnection. The method includes the steps of (a) forming a copper metal layer on a semiconductor wafer, (b)...
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7364666 |
Flexible circuits and method of making same
Disclosed is a method for making flexible circuits in which portions of a tie layer are removed by etching the underlying polymer. Also disclosed are flexible circuits made by this method.
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7358195 |
Method for fabricating liquid crystal display device
In etching a metal line formed as a dual layer of aluminum alloy and molybdenum, the metal line consisting of the dual layer of aluminum alloy and molybdenum is etched through one-time wet etching...
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7357878 |
Etchant, and method for fabricating a thin film transistor subtrate including conductive wires using the etchant and the resulting structure
Provided are an etchant, a method for fabricating a wire using the etchant, and a method for fabricating a thin film transistor (TFT) substrate using the etchant. The etchant includes a material...
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7341958 |
Integrated process for thin film resistors with silicides
The formation of devices in semiconductor material. In one embodiment, a method of forming a semiconductor device is provided. The method comprises forming at least one hard mask overlaying at...
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7326650 |
Method of etching dual damascene structure
In an etching method for achieving a dual damascene structure by using at least one layer of a low-k film and at least one layer of a hard mask, a dummy film, which is ultimately not left in the...
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7320942 |
Method for removal of metallic residue after plasma etching of a metal layer
A method for removal of metallic residue from a substrate after a plasma etch process in a semiconductor substrate processing system by cleaning the substrate in a hydrogen fluoride solution.
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7314834 |
Semiconductor device fabrication method
A semiconductor device fabrication method applies a diazo novolac photoresist to a semiconductor wafer, followed by light exposure of its entire surface to form an underlying resist layer; forms a...
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7309658 |
Molecular self-assembly in substrate processing
Systems and methods for molecular self-assembly are provided. The molecular self-assembly receives a substrate that includes one or more regions of dielectric material. A molecularly self-assembled...
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7276455 |
Methods of etching an aluminum oxide comprising substrate, and methods of forming a capacitor
This invention methods of etching an aluminum oxide comprising substrate, and methods of forming capacitors. In one implementation, a method of etching an aluminum oxide comprising substrate...
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7270762 |
Polishing compositions for noble metals
The polishing composition of this invention is useful for chemical-mechanical polishing of substrates containing noble metals such as platinum and comprises up to about 50% by weight of a adjuvant...
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7265040 |
Cleaning solution and method for selectively removing layer in a silicidation process
A cleaning solution selectively removes a titanium nitride layer and a non-reacting metal layer. The cleaning solution includes an acid solution and an oxidation agent with iodine. The cleaning...
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7256138 |
Method and composition for selectively etching against cobalt silicide
An etching method for use in integrated circuit fabrication includes providing a metal nitride layer on a substrate assembly, providing regions of cobalt silicide on first portions of the metal...
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7253119 |
Passivated nanoparticles, method of fabrication thereof, and devices incorporating nanoparticles
A plurality of semiconductor nanoparticles having an elementally passivated surface are provided. These nanoparticles are capable of being suspended in water without substantial agglomeration and...
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7244367 |
Metal alloy elements in micromachined devices
A micromechanical device is provided, which includes at least one flexible member formed from an alloy, where the alloy is made up of one or more noble metals and one or more alloying elements,...
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7202165 |
Electronic device having a stacked wiring layer including Al and Ti
In the case that a stacked layer, in which another metal layer is stacked on an Al layer or Al alloy layer having a low resistance, is used as a wiring material, an etchant is provided which can...
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7196013 |
Capping layer for a semiconductor device and a method of fabrication
Numerous embodiments of a method and apparatus for a capping layer are disclosed. In one embodiment, a method of forming a capping layer for a semiconductor device comprises forming one or more...
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7192835 |
Method of forming a high-k film on a semiconductor device
According to the present invention, high-k film can be etched to provide a desired geometry without damaging the silicon underlying material. A silicon oxide film 52 is formed on a silicon...
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