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7598181 Process for enhancing solubility and reaction rates in supercritical fluids  
Processes for enhancing solubility and the reaction rates in supercritical fluids are provided. In preferred embodiments, such processes provide for the uniform and precise deposition of...
7563717 Method for fabricating a semiconductor device  
The method includes chemical-mechanical polishing to planarize an insulating interlayer deposited on a lower pattern. The insulating interlayer is polished using a surfactant. The...
7550395 Control of photoelectrochemical (PEC) etching by modification of the local electrochemical potential of the semiconductor structure relative to the electrolyte  
A method for locally controlling an electrical potential of a semiconductor structure or device, and hence locally controlling lateral and/or vertical photoelectrochemical (PEC) etch rates, by...
7538042 Method of manufacturing a structure having a projection  
A method of manufacturing a structure is provided. This method include a steps of preparing a first substrate having a projection, forming a first layer on the projection, transferring the first...
7452478 Method for converting and purifying materials for modifying surfaces of semiconductor nanoparticles  
This invention provides a method for converting materials for stabilizing surfaces of semiconductor nanoparticles. In this method, surfaces of semiconductor nanoparticles are first modified and...
7410909 Method of removing ion implanted photoresist  
A method of removing an ion implanted photoresist comprises performing first cleaning a semiconductor substrate having the ion implanted photoresist using hot deionized water to which a megasonic...
7410814 Process and apparatus for cleaning silicon wafers  
An effective electropurge process and apparatus for wet processing of semiconductor wafers applies electrical charges to the wafer surface with an ample voltage sufficient to provide an effective...
7375017 Method for fabricating semiconductor device having stacked-gate structure  
A method for fabricating a semiconductor a semiconductor device having a stacked-gate structure. A polysilicon layer is formed overlying a substrate, which is insulated from the substrate by a...
7307026 Method of forming an epitaxial layer for raised drain and source regions by removing contaminations  
According to the present invention, a wet chemical oxidation and etch process cycle allows efficient removal of contaminated silicon surface layers prior to the epitaxial growth of raised source...
7247577 Insulated pad conditioner and method of using same  
A wafer planarization process with a conditioning tool having an electrical insulator that electrically insulates the abrasive surface of the conditioning tool. The electrical insulator extends the...
7129160 Method for simultaneously removing multiple conductive materials from microelectronic substrates  
A method and apparatus for simultaneously removing conductive materials from a microelectronic substrate. A method in accordance with one embodiment of the invention includes contacting a surface...
7064082 Methods for forming pin alloy-semiconductor devices with rectifying junction contacts  
The present invention pertains to a more efficient system and method for forming rectifying junction contacts in PIN alloy-semiconductor devices using photoelectrical and chemical etching. The...
7049235 Method of manufacturing semiconductor device  
A method of manufacturing a semiconductor device includes a process for forming a photoresist pattern. In the disclosed process, residual photoresist polymers are removed using a photoresist...
7026255 Method and device for photo-electrochemically etching a semiconductor sample, especially gallium nitride  
In a method for photo-electrochemical etching of a semiconductor sample, the semiconductor sample is brought in contact with an electrolyte liquid. The contact area formed thereby is illuminated...
7018938 Controlled use of photochemically susceptible chemistries for etching, cleaning and surface conditioning  
Radiant energy may be applied to a photochemically susceptible etching or conditioning solution to enable precise control of the removal of material or alteration of the top surface of a wafer...
7018936 Ion implant lithography method of processing a semiconductor substrate  
A method of masking and etching a semiconductor substrate includes forming a layer to be etched over a semiconductor substrate. An imaging layer is formed over the layer to be etched. Selected...
6989312 Method for fabricating semiconductor optical device  
Provided is a method for fabricating a semiconductor optical device that can be used as a reflecting semiconductor mirror or an optical filter, in which two or more types of semiconductor layers...
6943124 Two step exposure to strengthen structure of polyimide or negative tone photosensitive material  
A method is provided for forming features in a polyimide layer that is employed as an insulating layer or buffer layer during the fabrication of semiconductor devices or chip packaging structures....
6914008 Structure having pores and its manufacturing method  
A structure having pores includes a first layer containing alumina, a second layer that includes at least one of Ti, Zr, Hf, Nb, Ta, Mo, W and Si, and a third layer with electrical conductivity, in...
6897161 Method of cleaning component in plasma processing chamber and method of producing semiconductor devices  
A component having small holes, such as a silicon electrode plate having gas nozzles, used in a plasma processing apparatus is cleaned by producing a cavitation zone that extends through an entire...
6878634 Structure having recesses and projections, method of manufacturing structure, and functional device  
A structure having recesses and projections is provided. A method of manufacturing the structure comprises the steps of preparing a first substrate having a projection, forming a first layer on the...
6869889 Etching metal carbide films  
A metal carbide film may be etched in an etchant bath using sonication. The sonication may drive the reaction and, particularly, the gaseous byproducts in the form of carbon dioxide. Thus, the use...
6863769 Configuration and method for making contact with the back surface of a semiconductor substrate  
A base body is provided, on which a first sealing ring and a second sealing ring are disposed. A substrate is disposed on the sealing rings in such a way that a cavity is formed between the first...
6852643 Method for using ammonium fluoride solution in a photoelectrochemical etching process of a silicon wafer  
A method for using ammonium fluoride solution in a photoelectrochemical etching process of a silicon wafer, comprising steps of: placing a wafer after the pre-etching process into an alcohol...
6849859 Fabrication of precision optics using an imbedded reference surface  
The figure of a substrate is very precisely measured and a figured-correcting layer is provided on the substrate. The thickness of the figure-correcting layer is locally measured and compared to...
6835319 Method of patterning a substrate  
A method of patterning a substrate includes forming a liquid film on the substrate surface and directing laser energy from a laser through the film to etch the substrate surface. Etched material is...
6803322 PIN ALLOY-SEMICONDUCTOR, RADIATION DETECTORS WITH RECTIFYING JUNCTION CONTACTS, METHODS AND SYSTEMS FOR FORMING PIN ALLOY-SEMICONDUCTOR DEVICES WITH RECTIFYING JUNCTION CONTACTS, AND SYSTEMS AND METHODS FOR ANALYZING ALLOY-SEMICONDUCTOR PROPERTIES  
The present invention pertains to a more efficient system and method for forming rectifying junction contacts in PIN alloy-semiconductor devices using photoelectrical and chemical etching. The...
6784007 Nano-structures, process for preparing nano-structures and devices  
The present invention provides a nano-structure which can be applied to various high-function devices. The nano-structure includes an anodically oxidized layer having a plurality of kinds of pores.
6770568 Selective etching using sonication  
To provide for increased differentiation in etch rates, sonication may be used during etching. Such sonication may alter the relative etch rates of portions of a desired layer.
6586337 Method and apparatus for endpoint detection during chemical mechanical polishing  
An apparatus for in situ CMP endpoint detection is presented which includes a probe member for emitting and receiving light signals, a transparent plug mounted over the end of the probe, and a...
6566275 Spinner apparatus with chemical supply nozzle and methods of forming patterns and performing etching using the same  
A spinner apparatus for manufacturing a photomask, performing a developing process for forming a resist pattern on a specific substrate, and performing an etching process in which a resist pattern...
6562684 Methods of forming dielectric materials  
The invention encompasses a method of forming a dielectric material. A nitrogen-comprising layer is formed on at least some of the surface of a rugged polysilicon substrate to form a first portion...
6551943 Wet clean of organic silicate glass films  
A post-etch clean up process for OSG. After the trench ( 112 )/via ( 114 ) etch in a dual damascene process, a wet chemistry comprising HF and H 2 O 2 is used to remove residues without etching or...
6541386 Method for producing a structure with narrow pores  
Provided is a method for producing regularly ordered narrow pores excellent in linearity, and a structure with such narrow pores. A method for producing a narrow pore comprises a step of radiating...
6524965 Cleaning method for semiconductor manufacturing process to prevent metal corrosion  
A cleaning method for semiconductor manufacturing process. A to-be-cleaned wafer having a metal layer thereon is provided. The wafer is placed into a chemical cleaning equipment unit to clean the...
6513538 Method of removing contaminants from integrated circuit substrates using cleaning solutions  
A method for removing contaminants from an integrated circuit substrate include treating the substrate with a hydrogen peroxide cleaning solution containing a chelating agent, and treating the...
6497996 Fine pattern forming method  
As shown in FIG. 1 A, a first resist film 2 comprising organic high molecules and a second resist film 3 comprising a photosensitive material are sequentially applied to a substrate 1 by the...
6358861 Manufacturing method of silicon device  
A method of manufacturing a silicon device with a single crystal structure, including forming etching start patterns on a surface of a silicon substrate; etching the silicon substrate by applying a...
6333268 Method and apparatus for removing post-etch residues and other adherent matrices  
Adherent matrix layers such as post-etch and other post-process residues are removed from a substrate by exposing them to a vapor phase solvent to allow penetration of the vapor phase solvent into...
6331489 Semiconductor device production method  
An entire surface of a semiconductor substrate is coated with photoresist and baked. A circuit pattern area in the region excluding a peripheral region of the semiconductor substrate is subjected...
6319846 Method for removing solder bodies from a semiconductor wafer  
A method for removing a multiplicity of solder bodies connected to a semiconductor wafer through a copper wetting layer from the semiconductor wafer is disclosed. In the method, a semiconductor...
6265323 Substrate processing method and apparatus  
Disclosed herein is a method for processing a substrate. The method includes supplying a liquid agent such as a developer onto the surface of a substrate, bringing an upper surface of a film formed...
6245687 Precision wide band gap semiconductor etching  
A method for etching GaN material comprising configuring the GaN material as an anode in an electrochemical cell where the electrochemical cell is comprised of an anode, a cathode and an...
6177358 Photo-stimulated etching of CaF2  
Generally, and in one form of the invention, a method is presented for the photo-stimulated etching of a CaF 2 surface 12, comprising the steps of exposing the CaF 2 surface 12 to an ambient...
6174819 Low temperature photoresist removal for rework during metal mask formation  
A defective photoresist mask is removed from a metal layer prior to etching by low-temperature processing to minimize or substantially eliminate any resulting residue on the metal layer, thereby...
6127280 Photoelectrochemical capacitance-voltage measurements of wide bandgap semiconductors  
A method of determining the carrier concentration depth profile in n-type wide bandgap semiconductor wafers is disclosed. The method includes placing a semiconductor wafer within a...
6124207 Slurries for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods and apparatuses for making and using such slurries  
Slurries used in the manufacturing of microelectronic devices, and apparatuses and methods for making and using such slurries. In one aspect of the invention, a planarizing slurry for planarizing a...
6071829 Method of fabricating semiconductor components  
A method of fabricating a semiconductor component, the method including at least one step of etching an upper layer formed on a substrate. In the method, prior to forming the upper layer, at least...
6037270 Method of manufacturing semiconductor device and methods of processing, analyzing and manufacturing its substrate  
The gate oxide film is prevented from being thinned partially. The semiconductor substrate (wafer) can be etched (processed) under excellent conditions. The impurities on the wafer surface can be...
6033994 Apparatus and method for deprocessing a multi-layer semiconductor device  
An improved method of deprocessing semiconductor chips provides faster, more accurate and more complete deprocessing. The chip to be deprocessed is placed in a chemical agent to loosen or undercut...
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