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8133325 |
Dry cleaning method for plasma processing apparatus
This dry cleaning method for a plasma processing apparatus is a dry cleaning method for a plasma processing apparatus that includes: a vacuum container provided with a dielectric member; a planar...
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8129283 |
Plasma processing method and plasma processing apparatus
The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a...
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8124539 |
Plasma processing apparatus, focus ring, and susceptor
A plasma processing apparatus having a focus ring, enables the efficiency of cooling of the focus ring to be greatly improved, while preventing an increase in cost thereof. The plasma processing...
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8119532 |
Inductively coupled dual zone processing chamber with single planar antenna
A dual zone plasma processing chamber is provided. The plasma processing chamber includes a first substrate support having a first support surface adapted to support a first substrate within the...
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8110435 |
Method and apparatus for manufacturing semiconductor device
A method and apparatus for manufacturing a semiconductor device is disclosed, which is capable of realizing an extension of a cleaning cycle for a processing chamber, the method comprising...
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8105953 |
Method of manufacturing a semiconductor device
A semiconductor manufacturing apparatus includes a chamber, a gas supplier, a vacuum pump, an electrode, a conductive knitted wire mesh and a radio frequency power supply. The electrode is placed...
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8043971 |
Plasma processing apparatus, ring member and plasma processing method
[Problem to be Solved] In a plasma processing apparatus for executing a process using plasma, promoting the sharing of an apparatus in executing a plurality of different processes and plasma states...
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7943523 |
Plasma etching method and computer readable storage medium
A plasma etching method for plasma-etching an anti-reflective coating formed on a target object includes the step of placing the target object into a processing chamber having a first electrode and...
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7943524 |
Method of etching and etching apparatus
Silicon oxide film having, as a sublayer, a silicon nitride film layer serving as a protective film layer for 5 gate formed on silicon substrate is etched by introducing a processing gas including...
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7915062 |
Method of manufacturing a TFT array substrate
A TFT array substrate includes a TFT having an ohmic contact film and a source electrode and a drain electrode formed on the ohmic contact film. It also includes a pixel electrode electrically...
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7858155 |
Plasma processing method and plasma processing apparatus
It is intended to provide a plasma processing method and apparatus capable of increasing the uniformity of amorphyzation processing. A prescribed gas is introduced into a vacuum container 1 from a...
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7829463 |
Plasma processing method and plasma processing apparatus
A plasma processing method performs a desired plasma process on substrates by using a plasma generated in a processing space. A first and a second electrode are disposed in parallel in a processing...
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7772123 |
Through substrate via semiconductor components
A structure and method of forming through substrate vias in forming semiconductor components are described. In one embodiment, the invention describes a method of forming the through substrate via...
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7763863 |
Charged particle beam application apparatus
An apparatus capable of improving image quality by making it possible to suck specimens of different sizes electrostatically, and uniformalizing an electric field of a specimen edge portion, while...
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7759249 |
Method of removing residue from a substrate
A method of using a post-etch treatment system for removing photoresist and etch residue formed during an etching process is described. For example, the etch residue can include halogen containing...
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7758762 |
Method for manufacturing an electron-emitting device with first and second carbon films
An electron-emitting device comprises a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The...
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7759214 |
Semiconductor including STI and method for manufacturing the same
Provided is a semiconductor device and method of making, incorporating a trench having rounded edges. According to an embodiment, a pad oxide layer, nitride layer, and TEOS layer are sequentially...
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7754615 |
Method and apparatus for detecting endpoint in a dry etching system by monitoring a superimposed DC current
A method and apparatus for detecting the endpoint in a dry plasma etching system comprising a first electrode (e.g., upper electrode) and a second electrode (e.g., lower electrode) upon which a...
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7678705 |
Plasma semiconductor processing system and method
An apparatus to perform semiconductor processing includes a process chamber; a plasma generator for generating a plasma in the process chamber; and a helical ribbon electrode coupled to the output...
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7618515 |
Focus ring, plasma etching apparatus and plasma etching method
In a plasma etching apparatus for performing a plasma etching on a surface of a substrate mounted on a susceptor in a processing vessel, a focus ring is installed to surround the substrate and has...
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7608544 |
Etching method and storage medium
An etching method which makes it possible to obtain a desired etching shape with ease, and a computer-readable storage medium storing a program for implementing the method. The etching method is...
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7541292 |
Plasma etch process with separately fed carbon-lean and carbon-rich polymerizing etch gases in independent inner and outer gas injection zones
A plasma etch process for etching high aspect ratio openings in a dielectric film on a workpiece is carried out in a reactor having a ceiling electrode overlying the workpiece and an electrostatic...
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7517803 |
Silicon parts having reduced metallic impurity concentration for plasma reaction chambers
Silicon parts of a semiconductor processing apparatus containing low levels of metal impurities that are highly mobile in silicon are provided. The silicon parts include, for example, rings,...
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7485580 |
Method for removing organic electroluminescent residues from a substrate
A process for removing organic electroluminescent residues from a substrate is described herein. The process includes the steps of providing a process gas comprising a fluorine-containing gas,...
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7479457 |
Gas mixture for removing photoresist and post etch residue from low-k dielectric material and method of use thereof
Atomic oxygen generated in oxygen stripping plasmas reacts with and damages low-k dielectric materials during stripping of dielectric post etch residues. While damage of low-k dielectric materials...
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7473646 |
Dry etching method and production method of magnetic memory device
Provision of a process capable of preferably etching particularly PtMn used for a pin layer of an MRAM is an object: a dry etching method for performing dry etching on a layer including platinum...
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7442650 |
Methods of manufacturing semiconductor structures using RIE process
A method for etching on a semiconductors at the back end of line using reactive ion etching. The method comprises reduced pressure atmosphere and a mixture of gases at a specific flow rate ratio...
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7422982 |
Method and apparatus for electroprocessing a substrate with edge profile control
A method and apparatus for electroprocessing a substrate is provided. In one embodiment, a method for electroprocessing a substrate includes the steps of biasing a first electrode to establish a...
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7413673 |
Method for adjusting voltage on a powered Faraday shield
An apparatus and method for adjusting the voltage applied to a Faraday shield of an inductively coupled plasma etching apparatus is provided. An appropriate voltage is easily and variably applied...
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7384873 |
Manufacturing process of semiconductor device
A method of manufacturing a semiconductor device, includes: forming a resin layer with a resin containing an aromatic compound on a surface, where an electrode is formed, of a semiconductor...
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7375036 |
Anisotropic etch method
A method to anisotropically etch an oxide/silicide/poly sandwich structure on a silicon wafer substrate in situ, is disclosed, using a single parallel plate plasma reactor chamber and a single...
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7329365 |
Etchant composition for indium oxide layer and etching method using the same
An etchant for removing an indium oxide layer includes sulfuric acid as a main oxidizer, an auxiliary oxidizer such as H3PO4, HNO3, CH3COOH, HClO4, H2O2, and a Compound A that is obtained by mixing...
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7311852 |
Method of plasma etching low-k dielectric materials
A semiconductor manufacturing process wherein a low-k dielectric layer is plasma etched with selectivity to an overlying mask layer. The etchant gas can be oxygen-free and include a fluorocarbon...
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7279429 |
Method to improve ignition in plasma etching or plasma deposition steps
In one embodiment, the present invention relates to a method for increasing the ignition reliability of a plasma in a plasma reactor, the method comprising: supplying a source gas to the plasma...
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7241701 |
Method and furnace for the vapor phase deposition of components onto semiconductor substrates with a variable main flow direction of the process gas
A method and a furnace are provided for the vapor phase deposition of components onto semiconductor substrates. The main flow direction of the process gases can be varied or reversed by the furnace...
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7122479 |
Etching processing method
An etching processing method capable of etching a low dielectric constant layer at a reduced cost by using an etching processing apparatus comprising a vacuum vessel, a sample loading electrode...
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7109123 |
Silicon etching method
A Si etching method etches a Si wafer held on a susceptor placed in a processing vessel by a plasma-assisted etching process. A mixed etching gas prepared by mixing fluorosulfur gas, such as SF6...
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7033952 |
Apparatus and method using a remote RF energized plasma for processing semiconductor wafers
Chemical generator and method for generating a chemical species at a point of use such as the chamber of a reactor in which a workpiece such as a semiconductor wafer is to be processed. The species...
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7030035 |
Prevention of electrostatic wafer sticking in plasma deposition/etch tools
To remove unwanted electrostatic charge from a substrate or substrate clamping mechanism in a plasma processing chamber following the plasma processing of the substrate, the process of shutting...
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6972264 |
Method and apparatus for etching Si
A method for dry-etching a Si substrate or a Si layer in a processing chamber includes the step of supplying an etching gas into the processing chamber, wherein the etching gas is a mixture gas...
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6962879 |
Method of plasma etching silicon nitride
A semiconductor manufacturing process wherein silicon nitride is plasma etched with selectivity to an overlying and/or underlying dielectric layer such as a silicon oxide or low-k material. The...
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6951786 |
Method of forming a stack of refractory metal nitride over refractory metal silicide over silicon
The invention encompasses methods of forming silicide interconnects over silicon comprising substrates. In one implementation, a first layer comprising a metal and a non-metal impurity is formed...
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6926011 |
Post etching treatment process for high density oxide etcher
A three-step polymer removal process that reverses the conventional sequence in which polymer is removed. In the preferred embodiment of the present invention the polymer is first removed from the...
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6902683 |
Plasma processing apparatus and plasma processing method
A method of plasma-processing is provided which includes placing a sample on one of electrodes provided in a vacuum processing chamber and holding the sample onto the electrodes by an electrostatic...
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6897156 |
Vacuum plasma processor method
200 mm and 300 mm wafers are processed in vacuum plasma processing chambers that are the same or have the same geometry. Substantially planar excitation coils having different geometries for the...
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6852243 |
Confinement device for use in dry etching of substrate surface and method of dry etching a wafer surface
A confinement device for operative arrangement within a substrate etching chamber, having a lower surface of the device generally arranged over a substrate outer top surface such that a gap-spacing...
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6828248 |
Method of pull back for forming shallow trench isolation
A method of pull back for a shallow trench isolation (STI) structure is provided. The method firstly provides a substrate having a hard mask layer disposed thereupon and a dielectric layer above...
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6822311 |
DC or AC electric field assisted anneal
A method for forming a desired junction profile in a semiconductor device. At least one dopant is introduced into a semiconductor substrate. The at least one dopant is diffused in the semiconductor...
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6800559 |
Method and apparatus for generating H20 to be used in a wet oxidation process to form SiO2 on a silicon surface
Chemical generator and method for generating a chemical species at a point of use such as the chamber of a reactor in which a workpiece such as a semiconductor wafer is to be processed. The species...
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6720273 |
DEVICE AND METHOD FOR THE HIGH-FREQUENCY ETCHING OF A SUBSTRATE USING A PLASMA ETCHING INSTALLATION AND DEVICE AND METHOD FOR IGNITING A PLASMA AND FOR PULSING THE PLASMA OUT PUT OR ADJUSTING THE SAME UPWARDS
A device and a method capable of being carried out therewith for, preferably, anisotropically etching a substrate (10), in particular, a patterned silicon body, with the assistance of a plasma...
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