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7618515 Focus ring, plasma etching apparatus and plasma etching method  
In a plasma etching apparatus for performing a plasma etching on a surface of a substrate mounted on a susceptor in a processing vessel, a focus ring is installed to surround the substrate and has...
7608544 Etching method and storage medium  
An etching method which makes it possible to obtain a desired etching shape with ease, and a computer-readable storage medium storing a program for implementing the method. The etching method is...
7557049 Producing method of wired circuit board  
A producing method of a wired circuit board includes the step of preparing a wired circuit board including an insulating layer and a conductive pattern having a wire covered with the insulating...
7541292 Plasma etch process with separately fed carbon-lean and carbon-rich polymerizing etch gases in independent inner and outer gas injection zones  
A plasma etch process for etching high aspect ratio openings in a dielectric film on a workpiece is carried out in a reactor having a ceiling electrode overlying the workpiece and an electrostatic...
7517803 Silicon parts having reduced metallic impurity concentration for plasma reaction chambers  
Silicon parts of a semiconductor processing apparatus containing low levels of metal impurities that are highly mobile in silicon are provided. The silicon parts include, for example, rings,...
7485580 Method for removing organic electroluminescent residues from a substrate  
A process for removing organic electroluminescent residues from a substrate is described herein. The process includes the steps of providing a process gas comprising a fluorine-containing gas,...
7479457 Gas mixture for removing photoresist and post etch residue from low-k dielectric material and method of use thereof  
Atomic oxygen generated in oxygen stripping plasmas reacts with and damages low-k dielectric materials during stripping of dielectric post etch residues. While damage of low-k dielectric materials...
7473646 Dry etching method and production method of magnetic memory device  
Provision of a process capable of preferably etching particularly PtMn used for a pin layer of an MRAM is an object: a dry etching method for performing dry etching on a layer including platinum...
7442650 Methods of manufacturing semiconductor structures using RIE process  
A method for etching on a semiconductors at the back end of line using reactive ion etching. The method comprises reduced pressure atmosphere and a mixture of gases at a specific flow rate ratio...
7422982 Method and apparatus for electroprocessing a substrate with edge profile control  
A method and apparatus for electroprocessing a substrate is provided. In one embodiment, a method for electroprocessing a substrate includes the steps of biasing a first electrode to establish a...
7413673 Method for adjusting voltage on a powered Faraday shield  
An apparatus and method for adjusting the voltage applied to a Faraday shield of an inductively coupled plasma etching apparatus is provided. An appropriate voltage is easily and variably applied...
7384873 Manufacturing process of semiconductor device  
A method of manufacturing a semiconductor device, includes: forming a resin layer with a resin containing an aromatic compound on a surface, where an electrode is formed, of a semiconductor...
7375036 Anisotropic etch method  
A method to anisotropically etch an oxide/silicide/poly sandwich structure on a silicon wafer substrate in situ, is disclosed, using a single parallel plate plasma reactor chamber and a single...
7329365 Etchant composition for indium oxide layer and etching method using the same  
An etchant for removing an indium oxide layer includes sulfuric acid as a main oxidizer, an auxiliary oxidizer such as H 3 PO 4 , HNO 3 , CH 3 COOH, HClO 4 , H 2 O 2 , and a Compound A that is...
7311852 Method of plasma etching low-k dielectric materials  
A semiconductor manufacturing process wherein a low-k dielectric layer is plasma etched with selectivity to an overlying mask layer. The etchant gas can be oxygen-free and include a fluorocarbon...
7279429 Method to improve ignition in plasma etching or plasma deposition steps  
In one embodiment, the present invention relates to a method for increasing the ignition reliability of a plasma in a plasma reactor, the method comprising: supplying a source gas to the plasma...
7241701 Method and furnace for the vapor phase deposition of components onto semiconductor substrates with a variable main flow direction of the process gas  
A method and a furnace are provided for the vapor phase deposition of components onto semiconductor substrates. The main flow direction of the process gases can be varied or reversed by the furnace...
7122479 Etching processing method  
An etching processing method capable of etching a low dielectric constant layer at a reduced cost by using an etching processing apparatus comprising a vacuum vessel, a sample loading electrode...
7109123 Silicon etching method  
A Si etching method etches a Si wafer held on a susceptor placed in a processing vessel by a plasma-assisted etching process. A mixed etching gas prepared by mixing fluorosulfur gas, such as SF 6 ...
7033952 Apparatus and method using a remote RF energized plasma for processing semiconductor wafers  
Chemical generator and method for generating a chemical species at a point of use such as the chamber of a reactor in which a workpiece such as a semiconductor wafer is to be processed. The species...
7030035 Prevention of electrostatic wafer sticking in plasma deposition/etch tools  
To remove unwanted electrostatic charge from a substrate or substrate clamping mechanism in a plasma processing chamber following the plasma processing of the substrate, the process of shutting...
6972264 Method and apparatus for etching Si  
A method for dry-etching a Si substrate or a Si layer in a processing chamber includes the step of supplying an etching gas into the processing chamber, wherein the etching gas is a mixture gas...
6962879 Method of plasma etching silicon nitride  
A semiconductor manufacturing process wherein silicon nitride is plasma etched with selectivity to an overlying and/or underlying dielectric layer such as a silicon oxide or low-k material. The...
6951786 Method of forming a stack of refractory metal nitride over refractory metal silicide over silicon  
The invention encompasses methods of forming silicide interconnects over silicon comprising substrates. In one implementation, a first layer comprising a metal and a non-metal impurity is formed...
6926011 Post etching treatment process for high density oxide etcher  
A three-step polymer removal process that reverses the conventional sequence in which polymer is removed. In the preferred embodiment of the present invention the polymer is first removed from the...
6902683 Plasma processing apparatus and plasma processing method  
A method of plasma-processing is provided which includes placing a sample on one of electrodes provided in a vacuum processing chamber and holding the sample onto the electrodes by an electrostatic...
6897156 Vacuum plasma processor method  
200 mm and 300 mm wafers are processed in vacuum plasma processing chambers that are the same or have the same geometry. Substantially planar excitation coils having different geometries for the...
6852243 Confinement device for use in dry etching of substrate surface and method of dry etching a wafer surface  
A confinement device for operative arrangement within a substrate etching chamber, having a lower surface of the device generally arranged over a substrate outer top surface such that a gap-spacing...
6828248 Method of pull back for forming shallow trench isolation  
A method of pull back for a shallow trench isolation (STI) structure is provided. The method firstly provides a substrate having a hard mask layer disposed thereupon and a dielectric layer above...
6822311 DC or AC electric field assisted anneal  
A method for forming a desired junction profile in a semiconductor device. At least one dopant is introduced into a semiconductor substrate. The at least one dopant is diffused in the semiconductor...
6800559 Method and apparatus for generating H20 to be used in a wet oxidation process to form SiO2 on a silicon surface  
Chemical generator and method for generating a chemical species at a point of use such as the chamber of a reactor in which a workpiece such as a semiconductor wafer is to be processed. The species...
6720273 DEVICE AND METHOD FOR THE HIGH-FREQUENCY ETCHING OF A SUBSTRATE USING A PLASMA ETCHING INSTALLATION AND DEVICE AND METHOD FOR IGNITING A PLASMA AND FOR PULSING THE PLASMA OUT PUT OR ADJUSTING THE SAME UPWARDS  
A device and a method capable of being carried out therewith for, preferably, anisotropically etching a substrate ( 10 ), in particular, a patterned silicon body, with the assistance of a plasma (...
6660651 Adjustable wafer stage, and a method and system for performing process operations using same  
A process tool comprised of an adjustable wafer stage and various methods and systems for performing process operations using same is disclosed herein. In one illustrative embodiment, the process...
6649076 Method for performing plasma process on particles  
The disclosed is a method and apparatus capable of certainly performing a plasma process such as isotropic plasma etching on the whole surface of a particle. A particle ( 2 ) is passed through a...
6632726 Film formation method and film formation apparatus  
To perform a film formation process, source RF power is applied to a coil to generate a plasma in a processing chamber. Subsequently, O 2 gas and SiH 4 gas are introduced into the processing...
6624084 Plasma processing equipment and plasma processing method using the same  
In plasma processing equipment having a vacuum processing chamber, a plasma generation means, a stage for loading a wafer to be processed in the vacuum processing chamber, an opposing electrode...
6579805 In situ chemical generator and method  
Chemical generator and method for generating a chemical species at a point of use such as the chamber of a reactor in which a workpiece such as a semiconductor wafer is to be processed. The species...
6579775 Semiconductor device having a metal gate with a work function compatible with a semiconductor device  
The present invention provides a semiconductor device located on a semiconductor substrate having opposite types of first and second transistors formed thereon. The device preferably includes a...
6573190 Dry etching device and dry etching method  
A dry etching apparatus and method which can uniformly and stably generate a high-density plasma over a wide range, and can cope with increase of wafer diameter and making the pattern finer in etch...
6558564 Plasma energy control by inducing plasma instability  
In the present invention, electron temperature is controlled by modifying the power delivered to the plasma by inducing or enhancing natural instabilities between the plasma and the power source....
6538387 Substrate electrode plasma generator and substance/material processing method  
The substrate electrode plasma generating apparatus is constituted of an array of small gap thin film electrode pairs 1, 2, 3 , and 4 formed by sputtering and dry etching tungsten on a silicon...
6531068 Method of anisotropic etching of silicon  
A method of anisotropic etching of silicon with structures, preferably defined with an etching mask, by using a plasma, with a polymer being applied during a polymerization step to the lateral...
6506687 Dry etching device and method of producing semiconductor devices  
A technique of dry etching the surface of a wafer by using a dry etching apparatus in which the distance between a wafer and a surface facing the wafer is set to the half or less of the diameter of...
6506686 Plasma processing apparatus and plasma processing method  
In a plasma processing apparatus that has a vacuum chamber, a process gas supply means of supply gas to a processing chamber, an electrode to hold a sample inside said vacuum chamber, a plasma...
6492280 Method and apparatus for etching a semiconductor wafer with features having vertical sidewalls  
A method and apparatus provide for etching a semiconductor wafer using a two step physical etching and a chemical etching process in order to create vertical sidewalls required for high density...
6489249 Elimination/reduction of black silicon in DT etch  
In a method of etching a wafer in a plasma etch reactor, the improvement of conducting etching to reduce or eliminate “black silicon” comprising: a) providing a plasma etch reactor comprising...
6475918 Plasma treatment apparatus and plasma treatment method  
An etching method capable of obtaining a fine fabricated shape, particularly, a vertical fabricated shape with less bowing upon fabrication of insulation films in the production of semiconductors,...
6444586 Method of etching doped silicon dioxide with selectivity to undoped silicon dioxide with a high density plasma etcher  
Disclosed is a process for removing doped silicon dioxide from a structure selectively to undoped silicon dioxide. A structure having both doped and undoped silicon dioxide regions is exposed to a...
6432831 Gas distribution apparatus for semiconductor processing  
A gas distribution system for uniformly or non-uniformly distributing gas across the surface of a semiconductor substrate. The gas distribution system includes a support plate and a showerhead...
6426302 Process for producing semiconductor device  
A plasma processing apparatus having a vacuum vessel and a supporting means for supporting a processing target in the vacuum vessel, the apparatus comprising means for introducing a gas into a...
Matches 1 - 50 out of 195 1 2 3 4 >