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8133325 Dry cleaning method for plasma processing apparatus  
This dry cleaning method for a plasma processing apparatus is a dry cleaning method for a plasma processing apparatus that includes: a vacuum container provided with a dielectric member; a planar...
8129283 Plasma processing method and plasma processing apparatus  
The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a...
8124539 Plasma processing apparatus, focus ring, and susceptor  
A plasma processing apparatus having a focus ring, enables the efficiency of cooling of the focus ring to be greatly improved, while preventing an increase in cost thereof. The plasma processing...
8119532 Inductively coupled dual zone processing chamber with single planar antenna  
A dual zone plasma processing chamber is provided. The plasma processing chamber includes a first substrate support having a first support surface adapted to support a first substrate within the...
8110435 Method and apparatus for manufacturing semiconductor device  
A method and apparatus for manufacturing a semiconductor device is disclosed, which is capable of realizing an extension of a cleaning cycle for a processing chamber, the method comprising...
8105953 Method of manufacturing a semiconductor device  
A semiconductor manufacturing apparatus includes a chamber, a gas supplier, a vacuum pump, an electrode, a conductive knitted wire mesh and a radio frequency power supply. The electrode is placed...
8043971 Plasma processing apparatus, ring member and plasma processing method  
[Problem to be Solved] In a plasma processing apparatus for executing a process using plasma, promoting the sharing of an apparatus in executing a plurality of different processes and plasma states...
7943523 Plasma etching method and computer readable storage medium  
A plasma etching method for plasma-etching an anti-reflective coating formed on a target object includes the step of placing the target object into a processing chamber having a first electrode and...
7943524 Method of etching and etching apparatus  
Silicon oxide film having, as a sublayer, a silicon nitride film layer serving as a protective film layer for 5 gate formed on silicon substrate is etched by introducing a processing gas including...
7915062 Method of manufacturing a TFT array substrate  
A TFT array substrate includes a TFT having an ohmic contact film and a source electrode and a drain electrode formed on the ohmic contact film. It also includes a pixel electrode electrically...
7858155 Plasma processing method and plasma processing apparatus  
It is intended to provide a plasma processing method and apparatus capable of increasing the uniformity of amorphyzation processing. A prescribed gas is introduced into a vacuum container 1 from a...
7829463 Plasma processing method and plasma processing apparatus  
A plasma processing method performs a desired plasma process on substrates by using a plasma generated in a processing space. A first and a second electrode are disposed in parallel in a processing...
7772123 Through substrate via semiconductor components  
A structure and method of forming through substrate vias in forming semiconductor components are described. In one embodiment, the invention describes a method of forming the through substrate via...
7763863 Charged particle beam application apparatus  
An apparatus capable of improving image quality by making it possible to suck specimens of different sizes electrostatically, and uniformalizing an electric field of a specimen edge portion, while...
7759249 Method of removing residue from a substrate  
A method of using a post-etch treatment system for removing photoresist and etch residue formed during an etching process is described. For example, the etch residue can include halogen containing...
7758762 Method for manufacturing an electron-emitting device with first and second carbon films  
An electron-emitting device comprises a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The...
7759214 Semiconductor including STI and method for manufacturing the same  
Provided is a semiconductor device and method of making, incorporating a trench having rounded edges. According to an embodiment, a pad oxide layer, nitride layer, and TEOS layer are sequentially...
7754615 Method and apparatus for detecting endpoint in a dry etching system by monitoring a superimposed DC current  
A method and apparatus for detecting the endpoint in a dry plasma etching system comprising a first electrode (e.g., upper electrode) and a second electrode (e.g., lower electrode) upon which a...
7678705 Plasma semiconductor processing system and method  
An apparatus to perform semiconductor processing includes a process chamber; a plasma generator for generating a plasma in the process chamber; and a helical ribbon electrode coupled to the output...
7618515 Focus ring, plasma etching apparatus and plasma etching method  
In a plasma etching apparatus for performing a plasma etching on a surface of a substrate mounted on a susceptor in a processing vessel, a focus ring is installed to surround the substrate and has...
7608544 Etching method and storage medium  
An etching method which makes it possible to obtain a desired etching shape with ease, and a computer-readable storage medium storing a program for implementing the method. The etching method is...
7541292 Plasma etch process with separately fed carbon-lean and carbon-rich polymerizing etch gases in independent inner and outer gas injection zones  
A plasma etch process for etching high aspect ratio openings in a dielectric film on a workpiece is carried out in a reactor having a ceiling electrode overlying the workpiece and an electrostatic...
7517803 Silicon parts having reduced metallic impurity concentration for plasma reaction chambers  
Silicon parts of a semiconductor processing apparatus containing low levels of metal impurities that are highly mobile in silicon are provided. The silicon parts include, for example, rings,...
7485580 Method for removing organic electroluminescent residues from a substrate  
A process for removing organic electroluminescent residues from a substrate is described herein. The process includes the steps of providing a process gas comprising a fluorine-containing gas,...
7479457 Gas mixture for removing photoresist and post etch residue from low-k dielectric material and method of use thereof  
Atomic oxygen generated in oxygen stripping plasmas reacts with and damages low-k dielectric materials during stripping of dielectric post etch residues. While damage of low-k dielectric materials...
7473646 Dry etching method and production method of magnetic memory device  
Provision of a process capable of preferably etching particularly PtMn used for a pin layer of an MRAM is an object: a dry etching method for performing dry etching on a layer including platinum...
7442650 Methods of manufacturing semiconductor structures using RIE process  
A method for etching on a semiconductors at the back end of line using reactive ion etching. The method comprises reduced pressure atmosphere and a mixture of gases at a specific flow rate ratio...
7422982 Method and apparatus for electroprocessing a substrate with edge profile control  
A method and apparatus for electroprocessing a substrate is provided. In one embodiment, a method for electroprocessing a substrate includes the steps of biasing a first electrode to establish a...
7413673 Method for adjusting voltage on a powered Faraday shield  
An apparatus and method for adjusting the voltage applied to a Faraday shield of an inductively coupled plasma etching apparatus is provided. An appropriate voltage is easily and variably applied...
7384873 Manufacturing process of semiconductor device  
A method of manufacturing a semiconductor device, includes: forming a resin layer with a resin containing an aromatic compound on a surface, where an electrode is formed, of a semiconductor...
7375036 Anisotropic etch method  
A method to anisotropically etch an oxide/silicide/poly sandwich structure on a silicon wafer substrate in situ, is disclosed, using a single parallel plate plasma reactor chamber and a single...
7329365 Etchant composition for indium oxide layer and etching method using the same  
An etchant for removing an indium oxide layer includes sulfuric acid as a main oxidizer, an auxiliary oxidizer such as H3PO4, HNO3, CH3COOH, HClO4, H2O2, and a Compound A that is obtained by mixing...
7311852 Method of plasma etching low-k dielectric materials  
A semiconductor manufacturing process wherein a low-k dielectric layer is plasma etched with selectivity to an overlying mask layer. The etchant gas can be oxygen-free and include a fluorocarbon...
7279429 Method to improve ignition in plasma etching or plasma deposition steps  
In one embodiment, the present invention relates to a method for increasing the ignition reliability of a plasma in a plasma reactor, the method comprising: supplying a source gas to the plasma...
7241701 Method and furnace for the vapor phase deposition of components onto semiconductor substrates with a variable main flow direction of the process gas  
A method and a furnace are provided for the vapor phase deposition of components onto semiconductor substrates. The main flow direction of the process gases can be varied or reversed by the furnace...
7122479 Etching processing method  
An etching processing method capable of etching a low dielectric constant layer at a reduced cost by using an etching processing apparatus comprising a vacuum vessel, a sample loading electrode...
7109123 Silicon etching method  
A Si etching method etches a Si wafer held on a susceptor placed in a processing vessel by a plasma-assisted etching process. A mixed etching gas prepared by mixing fluorosulfur gas, such as SF6...
7033952 Apparatus and method using a remote RF energized plasma for processing semiconductor wafers  
Chemical generator and method for generating a chemical species at a point of use such as the chamber of a reactor in which a workpiece such as a semiconductor wafer is to be processed. The species...
7030035 Prevention of electrostatic wafer sticking in plasma deposition/etch tools  
To remove unwanted electrostatic charge from a substrate or substrate clamping mechanism in a plasma processing chamber following the plasma processing of the substrate, the process of shutting...
6972264 Method and apparatus for etching Si  
A method for dry-etching a Si substrate or a Si layer in a processing chamber includes the step of supplying an etching gas into the processing chamber, wherein the etching gas is a mixture gas...
6962879 Method of plasma etching silicon nitride  
A semiconductor manufacturing process wherein silicon nitride is plasma etched with selectivity to an overlying and/or underlying dielectric layer such as a silicon oxide or low-k material. The...
6951786 Method of forming a stack of refractory metal nitride over refractory metal silicide over silicon  
The invention encompasses methods of forming silicide interconnects over silicon comprising substrates. In one implementation, a first layer comprising a metal and a non-metal impurity is formed...
6926011 Post etching treatment process for high density oxide etcher  
A three-step polymer removal process that reverses the conventional sequence in which polymer is removed. In the preferred embodiment of the present invention the polymer is first removed from the...
6902683 Plasma processing apparatus and plasma processing method  
A method of plasma-processing is provided which includes placing a sample on one of electrodes provided in a vacuum processing chamber and holding the sample onto the electrodes by an electrostatic...
6897156 Vacuum plasma processor method  
200 mm and 300 mm wafers are processed in vacuum plasma processing chambers that are the same or have the same geometry. Substantially planar excitation coils having different geometries for the...
6852243 Confinement device for use in dry etching of substrate surface and method of dry etching a wafer surface  
A confinement device for operative arrangement within a substrate etching chamber, having a lower surface of the device generally arranged over a substrate outer top surface such that a gap-spacing...
6828248 Method of pull back for forming shallow trench isolation  
A method of pull back for a shallow trench isolation (STI) structure is provided. The method firstly provides a substrate having a hard mask layer disposed thereupon and a dielectric layer above...
6822311 DC or AC electric field assisted anneal  
A method for forming a desired junction profile in a semiconductor device. At least one dopant is introduced into a semiconductor substrate. The at least one dopant is diffused in the semiconductor...
6800559 Method and apparatus for generating H20 to be used in a wet oxidation process to form SiO2 on a silicon surface  
Chemical generator and method for generating a chemical species at a point of use such as the chamber of a reactor in which a workpiece such as a semiconductor wafer is to be processed. The species...
6720273 DEVICE AND METHOD FOR THE HIGH-FREQUENCY ETCHING OF A SUBSTRATE USING A PLASMA ETCHING INSTALLATION AND DEVICE AND METHOD FOR IGNITING A PLASMA AND FOR PULSING THE PLASMA OUT PUT OR ADJUSTING THE SAME UPWARDS  
A device and a method capable of being carried out therewith for, preferably, anisotropically etching a substrate (10), in particular, a patterned silicon body, with the assistance of a plasma...
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