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7622395 |
Two-step method for etching a fuse window on a semiconductor substrate
A two-step method for etching a fuse window on a semiconductor substrate is provided. A semiconductor substrate having thereon a fuse interconnect-wire is formed in a dielectric film stack. The...
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7622393 |
Method and apparatus for manufacturing a semiconductor device, control program thereof and computer-readable storage medium storing the control program
A semiconductor device manufacturing method includes a plasma etching process for selectively plasma etching a silicon nitride film against a silicon oxide film formed under the silicon nitride...
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7622391 |
Method of forming an electrically conductive line in an integrated circuit
A method of forming a semiconductor structure comprises providing a semiconductor structure comprising a layer of a dielectric material provided over an electrically conductive feature. An opening...
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7618895 |
Method for etching doughnut-type glass substrates
A method for etching doughnut-type glass substrates, which comprises laminating a plurality of doughnut-type glass substrates each having a circular hole at its center so that the circular holes...
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7615494 |
Method for fabricating semiconductor device including plug
A method for fabricating a semiconductor device includes forming an insulation layer over a substrate, etching the insulation layer using a hard mask pattern to form a contact hole, filling the...
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7615164 |
Plasma etching methods and contact opening forming methods
The invention includes etching and contact opening forming methods. In one implementation, a plasma etching method includes providing a bottom powered plasma chamber that includes a plasma...
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7611995 |
Method for removing silicon oxide film and processing apparatus
A silicon dioxide film removing method is capable of removing a silicon dioxide film, such as a natural oxide film or a chemical oxide film, at a temperature considerably higher than a room...
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7611944 |
Integrated circuit fabrication
A method for defining patterns in an integrated circuit comprises defining a plurality of features in a first photoresist layer using photolithography over a first region of a substrate. The method...
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7608196 |
Method of forming high aspect ratio apertures
A plasma etch process for etching a dielectric material employing two primary etchants at low flows and pressures, and a relatively low temperature environment within the etch chamber. The two...
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7608195 |
High aspect ratio contacts
A process for etching a insulating layer to produce an opening having an aspect ratio of at least 15:1 by supplying a first gaseous etchant having at least fifty (50) percent He to a plasma etch...
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7605090 |
Process for producing sublithographic structures
A layer structure and process for providing sublithographic structures are provided. A first auxiliary layer is formed over a surface of a carrier layer. A lithographically patterned second...
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7598177 |
Methods of filling trenches using high-density plasma deposition (HDP)
Methods of filling trenches/gaps defined by circuit elements on an integrated circuit substrate are provided. The methods include forming a first high-density plasma layer on an integrated circuit...
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7588957 |
CVD process gas flow, pumping and/or boosting
The present invention generally comprises a method and apparatus for supplemental pumping, gas feed, and/or RF current for a process. When depositing amorphous silicon, the amount of process gases,...
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7585775 |
System and method for faceting a masking layer in a plasma etch to slope a feature edge
A method is disclosed for applying a plasma etch process to facet a masking layer in a semiconductor device by creating sloped surfaces in the masking layer. The masking layer is plasma etched with...
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7579284 |
Etching solution, method of forming a pattern using the same, method of manufacturing a multiple gate oxide layer using the same and method of manufacturing a flash memory device using the same
Example embodiments of the present invention relate to an etching solution, a method of forming a pattern using the same, a method of manufacturing a multiple gate oxide layer using the same and a...
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7576011 |
Method of forming contact plug in semiconductor
A method of forming a contact plug in a semiconductor device includes the steps of forming a plurality of select lines and a plurality of word lines on a semiconductor substrate; forming a first...
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7576010 |
Method of forming pattern using fine pitch hard mask
A method of forming a first hard mask pattern including a plurality of first line patterns formed on the etch target layer in a first direction and having a first pitch. A third layer is formed on...
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7560391 |
Forming of trenches or wells having different destinations in a semiconductor substrate
A method for forming, in a semiconductor substrate, wells and/or trenches having different destinations, including the steps of at least partly simultaneously etching cavities according to the...
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7560387 |
Opening hard mask and SOI substrate in single process chamber
Methods for opening a hard mask and a silicon-on-insulator substrate in a single process chamber are disclosed. In one embodiment, the method includes patterning a photoresist over a stack...
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7560360 |
Methods for enhancing trench capacitance and trench capacitor
Methods for enhancing trench capacitance and a trench capacitor so formed are disclosed. In one embodiment a method includes forming a first portion of a trench; depositing a dielectric layer in...
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7553774 |
Method of fabricating semiconductor optical device
In a method of fabricating a semiconductor optical device, insulating structures for an alignment mark for use in electron beam exposure are formed on a primary surface of a first group III-V...
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7553769 |
Method for treating a dielectric film
A method and system for treating a dielectric film includes exposing at least one surface of the dielectric film to a C x H y containing material, wherein x and y are each integers greater than or...
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7553763 |
Salicide process utilizing a cluster ion implantation process
A salicide process contains providing a silicon substrate that comprises at least a predetermined salicide region, performing a cluster ion implantation process to form an amorphized layer in the...
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7550391 |
Method for forming fine patterns of a semiconductor device using double patterning
A method for forming fine patterns of a semiconductor device is disclosed. The method includes forming an etch film on a substrate, forming a protection film on the etch film, forming a hard mask...
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7547636 |
Pulsed ultra-high aspect ratio dielectric etch
A method for selectively etching an ultra high aspect ratio feature dielectric layer through a carbon based mask in an etch chamber is provided. A flow of an etch gas is provided, comprising a...
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7547635 |
Process for etching dielectric films with improved resist and/or etch profile characteristics
A process of etching openings in a dielectric layer includes supporting a semiconductor substrate in a plasma etch reactor, the substrate having a dielectric layer and a patterned photoresist...
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7547621 |
LPCVD gate hard mask
A gate hard mask is deposited on a gate structure using low pressure chemical vapor deposition (LPCVD). By doing so, the wet etch removal ratio (WERR) of the gate hard mask relative to the...
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7541292 |
Plasma etch process with separately fed carbon-lean and carbon-rich polymerizing etch gases in independent inner and outer gas injection zones
A plasma etch process for etching high aspect ratio openings in a dielectric film on a workpiece is carried out in a reactor having a ceiling electrode overlying the workpiece and an electrostatic...
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7541290 |
Methods of forming mask patterns on semiconductor wafers that compensate for nonuniform center-to-edge etch rates during photolithographic processing
Methods of forming integrated circuit devices include steps to selectively widen portions of a mask pattern extending adjacent an outer edge of a semiconductor wafer. These steps to selectively...
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7541286 |
Method for manufacturing semiconductor device using KrF light source
A semiconductor device manufacturing method using a KrF light source is disclosed. Embodiments relate to a method for manufacturing a semiconductor device including forming an oxide film over a...
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7517804 |
Selective etch chemistries for forming high aspect ratio features and associated structures
An interlevel dielectric layer, such as a silicon oxide layer, is selectively etched using a plasma etch chemistry including a silicon species and a halide species and also preferably a carbon...
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7517710 |
Method of manufacturing field emission device
A method of manufacturing a field emission device (FED), which reduces the number of photomask patterning processes and improves the manufacturing yield of the FED, is provided. The method includes...
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7514365 |
Method of fabricating opening and plug
A method of fabricating an opening or plug. In the process of forming the opening, before a photoresist layer is formed over a dielectric layer, a treatment process is performed to form a film on...
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7514282 |
Patterned silicon submicron tubes
An array of submicron silicon (Si) tubes is provided with a method for patterning submicron Si tubes. The method provides a Si substrate, and forms a silicon dioxide film overlying the Si...
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7514277 |
Etching method and apparatus
An etching method capable of controlling the film thickness of a hard mask layer uniformly is provided. A plasma etching is performed on a native oxide film by using an etching gas containing, for...
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7510972 |
Method of processing substrate, post-chemical mechanical polishing cleaning method, and method of and program for manufacturing electronic device
A method of processing a substrate which enables a surface damaged layer and polishing remnants on the surface of an insulating film to be removed, and enable the amount removed of the surface...
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7504341 |
Method of manufacturing a semiconductor apparatus using a substrate processing agent
A method of manufacturing a semiconductor device, including the steps of forming one or more insulation films over a substrate, said one or more insulation films including an insulation film at a...
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7504338 |
Method of pattern etching a silicon-containing hard mask
Disclosed herein is a method of pattern etching a layer of a silicon-containing dielectric material. The method employs a plasma source gas including CF 4 to CHF 3 , where the volumetric ratio of...
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7501349 |
Sequential oxide removal using fluorine and hydrogen
A method is provided for oxide removal from a substrate. The method includes providing the substrate in a process chamber where the substrate has an oxide layer formed thereon, and performing a...
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7498229 |
Transistor and in-situ fabrication process
A method of fabricating semiconductor components in-situ and in a continuous integrated sequence includes the steps of providing a single crystal semiconductor substrate, epitaxially growing a...
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7494933 |
Method for achieving uniform etch depth using ion implantation and a timed etch
A method of performing a timed etch of a material to a precise depth is provided. In this method, ion implantation of the material is performed before the timed etch. This ion implantation process...
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7491343 |
Line end shortening reduction during etch
A method for etching features in an etch layer is provided. A patterned photoresist mask is provided over the etch layer, the photoresist mask having at least one photoresist line having a pair of...
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7482278 |
Key-hole free process for high aspect ratio gap filling with reentrant spacer
A new method of depositing PE-oxide or PE-TEOS. An HDP-oxide is provided over a pattern of polysilicon. An etch back is performed to the deposited HDP-oxide, a layer of plasma-enhanced SiN is...
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7482262 |
Method of manufacturing semiconductor device
Disclosed are embodiments relating to a method of manufacturing a semiconductor device that may improve the yield rate of the semiconductor device. In embodiments, the method may include preparing...
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7476623 |
Method for microstructuring flat glass substrates
In the method for microstructuring flat glass substrates a substrate surface of a glass substrate is coated with at least one structured mask layer and subsequently exposed to a chemically reactive...
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7476609 |
Forming of a cavity in an insulating layer
A method for forming, by dry etch, an opening of a given shape in a silica glass layer, the layer having a doping profile similar to the shape and the etch plasma being a non-carbonated fluorinated...
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7473647 |
Method of forming pattern using fine pitch hard mask
A method of forming a fine pattern of a semiconductor device using a fine pitch hard mask is provided. A first hard mask pattern including first line patterns formed on an etch target layer of a...
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7470628 |
Etching methods
Processes, etchants, and apparatus useful for etching an insulating oxide layer of a substrate without damaging underlying nitride features or field oxide regions. The processes exhibit good...
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7470625 |
Method of plasma etching a substrate
A method for controlling striations and CD loss in a plasma etching method is disclosed. During the etching process, the substrate of semiconductor material to be etched is exposed first to plasma...
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7468323 |
Method of forming high aspect ratio structures
An etching process includes providing a dielectric first film on a substrate and a sacrificial second film on the dielectric first film. A conductive structure such as a container capacitor is...
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