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7629261 |
Patterning metal layers
A process for fabricating an electronic device comprising the step of patterning a metallic electrode to the electronic device by laser ablation followed by electroless plating, wherein the process...
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7625825 |
Method of patterning mechanical layer for MEMS structures
A method of making a microelectromechanical system (MEMS) device is disclosed. The method includes forming a stationary layer over a substrate. A sacrificial layer is formed over the stationary...
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7622391 |
Method of forming an electrically conductive line in an integrated circuit
A method of forming a semiconductor structure comprises providing a semiconductor structure comprising a layer of a dielectric material provided over an electrically conductive feature. An opening...
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7615495 |
Display device and manufacturing method of the same
A plurality of wires and electrodes are formed by forming a first conductive film, selectively forming a resist over the first conductive film, forming a second conductive film over the first...
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7605088 |
Method of uniformly etching refractory metals, refractory metal alloys and refractory metal silicides
This invention is directed to a process for etching a semiconductor device using an etchant composition to form a predetermined etched pattern therein. The semiconductor device typically has a...
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7605069 |
Method for fabricating semiconductor device with gate
A method for fabricating a semiconductor device with a gate is provided. The method includes: forming a gate insulation layer over a substrate; sequentially forming a polysilicon layer, a silicide...
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7595265 |
Semiconductor device and method for forming a metal line in the semiconductor device
Contact resistance of a semiconductor device may be reduced, and thereby the reliability of the semiconductor device may be enhanced, when a metal line is formed in a semiconductor device according...
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7585784 |
System and method for reducing etch sequencing induced downstream dielectric defects in high volume semiconducting manufacturing
A system and method is disclosed for reducing etch sequencing induced downstream dielectric defects produced in a SOG planarization process used in high volume semiconductor manufacturing. Three...
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7585698 |
Thin film transistor having oxide semiconductor layer and manufacturing method thereof
A thin film transistor has a semiconductor thin film including zinc oxide, a protection film formed on entirely the upper surface of the semiconductor thin film, a gate insulating film formed on...
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7585779 |
Fabrication method of semiconductor device
A fabrication method of a semiconductor device includes steps of performing any one of O 2 ashing, organic processing, and dry etching on a surface of a GaN-based semiconductor layer, etching the...
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7560315 |
Manufacturing method for semiconductor device
It is an object of the present invention to enhance a selection ratio in an etching process, and provide a method for manufacturing a semiconductor device that has favorable uniform characteristics...
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7538041 |
Magnetic recording medium, method of manufacturing the same, and intermediate for magnetic recording medium
A magnetic recording medium is provided in which a magnetic recording layer 5 is provided in a predetermined concavo-convex pattern on a substrate 1 A, a concave portion in a concavo-convex...
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7517810 |
Reduced metal design rules for power devices
A process for etching a thick aluminum contact layer of a semiconductor wafer comprises the formation of a wet etch photoresist mask and the opening of a window in the mask, followed by a wet etch...
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7517464 |
Method for manufacturing an LCD device
A method for manufacturing a TFT panel of an LCD device includes the steps of wet etching a multilayer metallic structure including a high-melting-point metal film (HMPM) film, Al film and another...
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7504680 |
Semiconductor device and mask pattern
A semiconductor device according to an aspect of the invention includes a semiconductor substrate, and a capacitor that is provided above the semiconductor substrate and is configured such that a...
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7501071 |
Method of forming a patterned conductive structure
A method of producing a patterned mirror on a transparent conductive substrate comprises the steps of; coating a layer of conductive material onto a substrate, coating a layer of metal onto the...
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7488689 |
Plasma etching method
In a vacuum processing chamber, an etching is performed on an object to be processed having at least a mask layer formed in a predetermined pattern and a Ti layer, as a layer to be etched, formed...
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7482277 |
Multilevel fabrication processing by functional regrouping of material deposition, lithography, and etching
A method of multilevel microfabrication processing is provided. The method includes providing a planar substrate that comprises one or more material layers. A first hardmask layer placed on top of...
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7446036 |
Gap free anchored conductor and dielectric structure and method for fabrication thereof
A microelectronic structure and a method for fabricating the microelectronic structure use a dielectric layer that is located and formed upon a first conductor layer. An aperture is located through...
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7442651 |
Plasma etching method
An etching technique capable of applying etching at high selectivity to a transition metal element-containing electrode material layer which is formed on or above a dielectric material layer made...
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7442647 |
Structure and method for formation of cladded interconnects for MRAMs
A structure and method for fabricating a top strap in a magnetic random access memory, MRAM, comprising a damascene process forming a trench in a dielectric layer and resulting in a metal conductor...
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7439087 |
Semiconductor device and manufacturing method thereof
A technology for reducing distance between adjacent pixel electrodes to smaller than the limit set by conventional process margin and also preventing adjacent pixel electrodes from being short...
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7439188 |
Reactor with heated and textured electrodes and surfaces
A reactor for processing semiconductor wafers with electrodes and other surfaces that can be one of heated, textured and/or pre-coated in order to facilitate adherence of materials deposited...
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7435681 |
Methods of etching stacks having metal layers and hard mask layers
Methods which comprise: providing a stack to be etched, the stack comprising a metal interconnect layer disposed above a substrate, a barrier layer disposed above the metal interconnect layer, a...
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7422983 |
Ta-TaN selective removal process for integrated device fabrication
Disclosed are a method and a system for processing a semiconductor structure of the type including a substrate, a dielectric layer, and a TaN—Ta liner on the dielectric layer. The method...
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7413993 |
Process for removing a residue from a metal structure on a semiconductor substrate
The invention is concerned with a process for removing residue comprising a polymeric resist and metal oxide from a metal structure on a semiconductor substrate, the process comprising the steps...
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7402522 |
Hard mask structure for deep trenched super-junction device
A hard mask structure is disclosed. The hard mask structure is used for manufacturing a deep trench of a super-junction device having a substrate and an epitaxial layer formed on the substrate. The...
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7393788 |
Method and system for selectively etching a dielectric material relative to silicon
A method and system for selectively and uniformly etching a dielectric layer with respect to silicon and polysilicon in a dry plasma etching system are described. The etch chemistry comprises the...
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7390752 |
Self-aligning patterning method
The present invention relates to a self-aligning patterning method which can be used to manufacture a plurality of multi-layer thin film transistors on a substrate. The method comprises firstly...
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7384873 |
Manufacturing process of semiconductor device
A method of manufacturing a semiconductor device, includes: forming a resin layer with a resin containing an aromatic compound on a surface, where an electrode is formed, of a semiconductor...
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7378352 |
Method of fabricating semiconductor device
After low dielectric constant films are formed on a wiring, hardmasks are formed on the low dielectric constant films. A resistmask is formed on the hardmasks. Via holes are formed in the low...
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7375036 |
Anisotropic etch method
A method to anisotropically etch an oxide/silicide/poly sandwich structure on a silicon wafer substrate in situ, is disclosed, using a single parallel plate plasma reactor chamber and a single...
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7368392 |
Method of fabricating a gate structure of a field effect transistor having a metal-containing gate electrode
A method of etching metals and/or metal-containing compounds using a plasma comprising a bromine-containing gas. In one embodiment, the method is used during fabrication of a gate structure of a...
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7361601 |
Chemical mechanical polish process and method for improving accuracy of determining polish endpoint thereof
A method for improving accuracy of determining polish endpoint of chemical mechanical polish (CMP) process is provided. The method is performed before the CMP process. First, a test wafer with a...
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7361606 |
Method of forming a metal line and method of manufacturing display substrate having the same
A method of forming a metal line is provided. A first metal layer and a second metal layer protecting the first metal layer are formed on a base substrate. The first metal layer includes aluminum...
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7354865 |
Method for removal of pattern resist over patterned metal having an underlying spacer layer
A method of removing the pattern resist that remains on a microchip wafer after etching a patterned layer that is supported by a spacer layer. After the etch, the wafer is cleaned with a develop...
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7354853 |
Selective dry etching of tantalum and tantalum nitride
The invention describes a method for the selective dry etching of tantalum and tantalum nitride films. Tantalum nitride layers ( 30 ) are often used in semiconductor manufacturing. The...
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7351661 |
Semiconductor device having trench isolation layer and a method of forming the same
A semiconductor device having a trench isolation layer in a semiconductor substrate is provided, wherein the trench isolation layer includes a silicon nitride liner, a silicon oxide liner; and a...
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7348279 |
Method of making an integrated circuit, including forming a contact
In order to form a contact in a layer on a substrate, in particular a contact in a logic circuit in a semiconductor component, the mask layer is structured for etching of the contact holes with a...
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7341958 |
Integrated process for thin film resistors with silicides
The formation of devices in semiconductor material. In one embodiment, a method of forming a semiconductor device is provided. The method comprises forming at least one hard mask overlaying at...
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7341950 |
Method for controlling a thickness of a first layer and method for adjusting the thickness of different first layers
A method for controlling a thickness of a first layer of an electrical contact of a semiconductor device, whereby the semiconductor device comprises a semiconductor layer, a first layer and a...
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7326650 |
Method of etching dual damascene structure
In an etching method for achieving a dual damascene structure by using at least one layer of a low-k film and at least one layer of a hard mask, a dummy film, which is ultimately not left in the...
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RE40028 |
Liquid crystal display device and method of manufacturing the same
The present invention discloses a method of manufacturing a liquid crystal display device including a first photolithography process forming a gate electrode on a substrate; a second...
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7316980 |
Method for forming ferrocapacitors and FeRAM devices
Ferrocapacitors having a vertical structure are formed by a process in which a ferroelectric layer is deposited over an insulator. In a first etching stage, the ferroelectric material is etched to...
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7312158 |
Method of forming pattern
A method of forming a pattern, including forming first and second films, and a resist film on the second film, patterning the resist film to form a first pattern, etching the first pattern to...
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7309657 |
Circuit board, liquid discharge apparatus, and method of manufacturing the circuit board
Provided is a method for manufacturing a circuit board including an electrode wiring formed above a surface portion of a substrate, and a plurality of electrothermal converting elements which have...
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7309655 |
Etching method in a semiconductor processing and etching system for performing the same
Disclosed is an etching method for semiconductor processing by which a pattern loading phenomenon is reduced. First, plasma is generated while setting a bias power applied to a wafer to zero and...
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7307012 |
Post vertical interconnects formed with silicide etch stop and method of making
A method to form a vertical interconnect advantageous for high-density semiconductor devices. A conductive etch stop layer, preferably of cobalt silicide, is formed. The etch stop layer may be in...
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7303997 |
Regionally thinned microstructures for microbolometers
Microbolometers with regionally thinned microbridges are produced by depositing a thin film (0.6 μm) of silicon nitride on a silicon substrate, forming microbridges on the substrate, etching the...
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7297638 |
Method for manufacturing a semiconductor device
A method of forming patterns in a semiconductor device comprises: forming a conductive film on a substrate; forming an anti-reflective layer on the conductive film; cleaning oxide residues on the...
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