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7622394 |
Method of fabricating semiconductor device including forming a protective layer and removing after etching a trench
The method of fabricating a semiconductor device includes subjecting a semiconductor substrate to trench etching by alternately repeating an etching step and a deposition step. The etching step...
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7615461 |
Method for forming shallow trench isolation of semiconductor device
A method for forming a shallow trench isolation (STI) of a semiconductor device comprises forming a nitride film pattern over a semiconductor substrate having a defined lower structure, etching a...
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7615494 |
Method for fabricating semiconductor device including plug
A method for fabricating a semiconductor device includes forming an insulation layer over a substrate, etching the insulation layer using a hard mask pattern to form a contact hole, filling the...
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7605090 |
Process for producing sublithographic structures
A layer structure and process for providing sublithographic structures are provided. A first auxiliary layer is formed over a surface of a carrier layer. A lithographically patterned second...
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7592262 |
Method for manufacturing MOS transistors utilizing a hybrid hard mask
A method for manufacturing MOS transistor with hybrid hard mask includes providing a substrate having a dielectric layer and a polysilicon layer thereon, forming a hybrid hard mask having a middle...
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7592263 |
Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device. In this method, a concave portion is formed in one surface in the thickness direction of a primary base plate comprising a semiconductor substrate...
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7576010 |
Method of forming pattern using fine pitch hard mask
A method of forming a first hard mask pattern including a plurality of first line patterns formed on the etch target layer in a first direction and having a first pitch. A third layer is formed on...
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7560387 |
Opening hard mask and SOI substrate in single process chamber
Methods for opening a hard mask and a silicon-on-insulator substrate in a single process chamber are disclosed. In one embodiment, the method includes patterning a photoresist over a stack...
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7544622 |
Passivation for cleaning a material
A contact is defined by an opening etched into borophosphosilicate glass (BPSG) down to a silicon substrate. In a contact cleaning process designed to remove native oxide at the bottom of the...
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7541286 |
Method for manufacturing semiconductor device using KrF light source
A semiconductor device manufacturing method using a KrF light source is disclosed. Embodiments relate to a method for manufacturing a semiconductor device including forming an oxide film over a...
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7541292 |
Plasma etch process with separately fed carbon-lean and carbon-rich polymerizing etch gases in independent inner and outer gas injection zones
A plasma etch process for etching high aspect ratio openings in a dielectric film on a workpiece is carried out in a reactor having a ceiling electrode overlying the workpiece and an electrostatic...
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7538377 |
Semiconductor memory device
In a cell contact pad method, a consecutive dummy cell contact pad intersecting with a cell gate electrode is formed at an outer peripheral portion of the memory cell array. The dummy cell contact...
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7531461 |
Process and system for etching doped silicon using SF6-based chemistry
A process and system for anisoptropically dry etching through a doped silicon layer is described. The process chemistry comprises SF 6 and a fluorocarbon gas. For example, the fluorocarbon gas can...
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7531460 |
Dry-etching method
A dry-etching method using an apparatus where a wafer is placed on either of a pair of opposed electrodes provided in an etching chamber, and high-frequency power is supplied to both the opposed...
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7517803 |
Silicon parts having reduced metallic impurity concentration for plasma reaction chambers
Silicon parts of a semiconductor processing apparatus containing low levels of metal impurities that are highly mobile in silicon are provided. The silicon parts include, for example, rings,...
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7514277 |
Etching method and apparatus
An etching method capable of controlling the film thickness of a hard mask layer uniformly is provided. A plasma etching is performed on a native oxide film by using an etching gas containing, for...
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7514282 |
Patterned silicon submicron tubes
An array of submicron silicon (Si) tubes is provided with a method for patterning submicron Si tubes. The method provides a Si substrate, and forms a silicon dioxide film overlying the Si...
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7498266 |
Method for structuring of silicon substrates for microsystem technological device elements and associated silicon substrate
A method for structuring of silicon substrates for microsystem technological device elements, wherein the silicon substrate is covered with an etching mask and wherein the structures are furnished...
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7494933 |
Method for achieving uniform etch depth using ion implantation and a timed etch
A method of performing a timed etch of a material to a precise depth is provided. In this method, ion implantation of the material is performed before the timed etch. This ion implantation process...
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7488689 |
Plasma etching method
In a vacuum processing chamber, an etching is performed on an object to be processed having at least a mask layer formed in a predetermined pattern and a Ti layer, as a layer to be etched, formed...
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7481943 |
Method suitable for etching hydrophillic trenches in a substrate
A method suitable for etching hydrophilic trenches into a substrate, such as silicon, is provided. The method comprises etching and sidewall passivation processes for achieving anisotropy....
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7468317 |
Method of forming metal line of semiconductor device
A method of forming a metal line, in which a nitride layer is used instead of a metal barrier layer, enabling a metal line structure with a relatively low resistance and therefore realizing a high...
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7468324 |
Microelectromechanical devices and their fabrication
A method of fabricating microelectromechanical (MEMs) systems and in particular for producing silicon carbide (SiC) MEMs devices with improved mechanical properties. The method comprises reacting a...
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7459399 |
Method for manufacturing probe structure of probe card
A method for manufacturing a probe structure of a probe card is disclosed. In accordance with the method of the present invention, a dual etching process of a silicon substrate or an etching...
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7459401 |
Method of dividing wafer
A method of dividing and separating a wafer having a plurality of devices formed on its front surface, which are separated by streets. The method includes applying a resist film coating to a...
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7456108 |
Manufacturing method for a semiconductor device
A manufacturing method for a semiconductor device, includes: preparing a semiconductor wafer having an active surface and a rear surface; forming a plurality of semiconductor regions, each of which...
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7439186 |
Method for structuring a silicon layer
A method for structuring a silicon layer applies lacquer mask onto the silicon layer, and the silicon layer is selectively etched relative to the lacquer mask using an etching gas mixture...
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7435354 |
Treatment method for surface of photoresist layer and method for forming patterned photoresist layer
A treatment method for a surface of a photoresist layer is provided. After forming a patterned photoresist layer over a wafer, a surface treatment step is performed to the photoresist layer by...
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7413992 |
Tungsten silicide etch process with reduced etch rate micro-loading
The embodiments provides an improved tungsten silicide etching process with reduced etch rate micro-loading effect. In one embodiment, a method for etching a layer formed on a substrate is...
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7410818 |
Thin film transistor, liquid crystal display using thin film transistor, and method of manufacturing thin film transistor
A semiconductor film, which is located over a gate electrode for forming a channel region between a source electrode and a drain electrode, has a width greater than a width of the source electrode...
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7405162 |
Etching method and computer-readable storage medium
An etching method forms an opening with a substantially vertical profile extending to a stopper layer by performing an etching with a plasma of an etching gas acting on an object to be processed...
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7399710 |
Method of controlling the pressure in a process chamber
The present invention consists in a method of plasma treatment of a semiconductor substrate in a process chamber connected to a vacuum line via a valve, said treatment including a plurality of...
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7396771 |
Plasma etching apparatus and plasma etching method
A plasma etching apparatus includes a processing chamber in which a specimen is subjected to plasma processing, a specimen holder for holding the specimen, the specimen holder including a...
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7390745 |
Pattern enhancement by crystallographic etching
A method for producing predetermined shapes in a crystalline Si-containing material that have substantially uniform straight sides or edges and well-defined inside and outside corners is provided...
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7390750 |
Method of patterning elements within a semiconductor topography
A method is provided which includes forming a hardmask feature adjacent to a patterned sacrificial structure of a semiconductor topography, selectively removing the patterned sacrificial structure...
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7390752 |
Self-aligning patterning method
The present invention relates to a self-aligning patterning method which can be used to manufacture a plurality of multi-layer thin film transistors on a substrate. The method comprises firstly...
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7358194 |
Sequential deposition process for forming Si-containing films
A method is provided for forming a Si film in sequential deposition process. The method includes providing a substrate in a process chamber, forming a chlorinated Si film by exposing the substrate...
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7344652 |
Plasma etching method
An etching method for forming a recess ( 220 ) having an opening dimension (R) of millimeter order in an object ( 212 ) to be etched such as a semiconductor wafer. A mask ( 214 ) having an opening...
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7341952 |
Multi-layer hard mask structure for etching deep trench in substrate
A method for etching a deep trench in a substrate. A multi-layer hard mask structure is formed overlying the substrate, which includes a first hard mask layer and at least one second hard mask...
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7338610 |
Etching method for manufacturing semiconductor device
A wafer having a dielectric layer and an electrode partially protruding from the top surface of the dielectric layer is provided. The dielectric layer is etched with a chemical solution such as...
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7323115 |
Substrate processing method and ink jet recording head substrate manufacturing method
A substrate (wafer) processing method for producing an ink jet recording head substrate in which the reverse surface thereof, that is, the surface having the larger of the two openings of the ink...
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RE40028 |
Liquid crystal display device and method of manufacturing the same
The present invention discloses a method of manufacturing a liquid crystal display device including a first photolithography process forming a gate electrode on a substrate; a second...
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RE40007 |
In-situ strip process for polysilicon etching in deep sub-micron technology
A new method of patterning the polysilicon layer in the manufacture of an integrated circuit device has been achieved. A polysilicon layer is provided overlying a semiconductor substrate. The...
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7314574 |
Etching method and apparatus
An etching apparatus comprises a workpiece holder ( 21 ) for holding a workpiece (X), a plasma generator ( 10, 20 ) for generating a plasma ( 30 ) in a vacuum chamber ( 3 ), an orifice electrode (...
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7309641 |
Method for rounding bottom corners of trench and shallow trench isolation process
A method for rounding the bottom corners of a trench is described. In the method, an etching process is performed using a fluorocarbon compound with at least two carbon atoms, He and O 2 as an...
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7309655 |
Etching method in a semiconductor processing and etching system for performing the same
Disclosed is an etching method for semiconductor processing by which a pattern loading phenomenon is reduced. First, plasma is generated while setting a bias power applied to a wafer to zero and...
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7307012 |
Post vertical interconnects formed with silicide etch stop and method of making
A method to form a vertical interconnect advantageous for high-density semiconductor devices. A conductive etch stop layer, preferably of cobalt silicide, is formed. The etch stop layer may be in...
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7303999 |
Multi-step method for etching strain gate recesses
Methods of performing controllable lateral etches into the silicon layer using a plasma-enhanced etch-deposit-etch sequence are disclosed. The first etch step etches into the silicon layer. The...
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7279429 |
Method to improve ignition in plasma etching or plasma deposition steps
In one embodiment, the present invention relates to a method for increasing the ignition reliability of a plasma in a plasma reactor, the method comprising: supplying a source gas to the plasma...
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7271102 |
Method of etching uniform silicon layer
A method of etching a silicon layer to avoid non-uniformity. First, a patterned silicon layer is provided. Next, an etching buffer layer is conformally formed on the surface and the top layer of...
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