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7585698 |
Thin film transistor having oxide semiconductor layer and manufacturing method thereof
A thin film transistor has a semiconductor thin film including zinc oxide, a protection film formed on entirely the upper surface of the semiconductor thin film, a gate insulating film formed on...
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7575998 |
Semiconductor device and metal line fabrication method of the same
Embodiments relate to a method for forming a wiring in a semiconductor device, that may include laminating a conductive layer for wiring formation on a semiconductor substrate, forming a...
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7544611 |
Method of manufacturing III-V nitride semiconductor device
An aluminum gallium nitride/gallium nitride layer (III-V nitride semiconductor layer) is formed on the surface of a silicone carbide substrate. The aluminum gallium nitride/gallium nitride layer is...
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7528076 |
Method for manufacturing gate oxide layer with different thicknesses
A method of manufacturing gate oxide layers with different thicknesses is disclosed. The method includes that a substrate is provided first. The substrate has a high voltage device region and a low...
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7482177 |
Method for manufacturing optical device, and optical device wafer
A method for manufacturing an optical device includes the steps of: forming a first multilayer film, including forming a first mirror above a substrate, forming an active layer above the first...
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7436075 |
Ion beam irradiation apparatus and ion beam irradiation method
The ion beam irradiation apparatus has a vacuum chamber 10 , an ion source 2 , a substrate driving mechanism 30 , rotation shafts 14 , arms 12 , and a motor. The ion source 2 is disposed...
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7429534 |
Etching a nitride-based heterostructure
An improved solution for producing nitride-based heterostructure(s), heterostructure device(s), integrated circuit(s) and/or Micro-Electro-Mechanical System(s) is provided. A nitride-based etch...
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7413958 |
GaN-based permeable base transistor and method of fabrication
An etched grooved GaN-based permeable-base transistor structure is disclosed, along with a method for fabrication of same.
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7390750 |
Method of patterning elements within a semiconductor topography
A method is provided which includes forming a hardmask feature adjacent to a patterned sacrificial structure of a semiconductor topography, selectively removing the patterned sacrificial structure...
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7387967 |
Columnar structured material and method of manufacturing the same
A method of manufacturing a dot pattern includes the steps of preparing a structured material composed of a plurality of columnar members containing a first component and a region containing a...
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7375037 |
Fabrication method for semiconductor integrated circuit device
To improve the shape of a gate electrode having SiGe, after patterning a gate electrode 15 G having an SiGe layer 15 b by a dry etching process, a plasma processing (postprocessing) is carried...
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7368394 |
Etch methods to form anisotropic features for high aspect ratio applications
Methods for forming anisotropic features for high aspect ratio application in etch process are provided in the present invention. The methods described herein advantageously facilitates profile and...
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7341952 |
Multi-layer hard mask structure for etching deep trench in substrate
A method for etching a deep trench in a substrate. A multi-layer hard mask structure is formed overlying the substrate, which includes a first hard mask layer and at least one second hard mask...
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RE40028 |
Liquid crystal display device and method of manufacturing the same
The present invention discloses a method of manufacturing a liquid crystal display device including a first photolithography process forming a gate electrode on a substrate; a second...
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7316979 |
Method and apparatus for providing an integrated active region on silicon-on-insulator devices
A method and apparatus for providing integrated active regions on silicon-on-insulator (SOI) devices by oxidizing a portion of the active layer. When the active layer of the SOI wafer is relatively...
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7309656 |
Method for forming step channel of semiconductor device
A method for forming a step channel of a semiconductor device is disclosed. The method for forming a step channel of a semiconductor device comprises forming a hard mask layer pattern defining a...
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7288486 |
Method for manufacturing semiconductor device having via holes
In a method for manufacturing a semiconductor device wherein via holes are formed in an SiC substrate, a stacked film consisting of a Ti film and an Au film is formed on the back face of the SiC...
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7282454 |
Switched uniformity control
A component delivery mechanism for distributing a component inside a process chamber is disclosed. The component is used to process a work piece within the process chamber. The component delivery...
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7262137 |
Dry etching process for compound semiconductors
Accordingly, this invention relates to an dry etching process for semiconductor wafers. More particularly, the present invention discloses a dry etching process including a halogen etchant ( 24 )...
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7259102 |
Etching technique to planarize a multi-layer structure
The present invention is directed to a method of etching a multi-layer structure formed from a layer of a first material and a layer of a second material differing from the first material to obtain...
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7256134 |
Selective etching of carbon-doped low-k dielectrics
The present invention includes a process for selectively etching a low-k dielectric material formed on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture...
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7250349 |
Method for forming ferroelectric memory capacitor
A ferroelectric memory capacitor is formed by forming a barrier layer, a first metal layer, a ferroelectric layer, a second metal layer, and a hard mask layer, on dielectric layer ( 70 ). Using the...
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7208423 |
Semiconductor device fabrication method and semiconductor device
A resist pattern ( 5 ) is formed in a dimension of a limitation of an exposure resolution over a hard mask material film ( 4 ) over a work film ( 3 ). The material film ( 4 ) is processed using the...
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7196017 |
Method for etching smooth sidewalls in III-V based compounds for electro-optical devices
III-V based compounds are etched to produce smooth sidewalls for electro-optical applications using BCl 3 together with chemistries of CH 4 and H 2 in RIE and/or ICP systems. HI or IBr or some...
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7169709 |
Laser etching method and apparatus therefor
The invention provides a laser etching method for optical ablation working by irradiating a work article formed of an inorganic material with a laser light from a laser oscillator capable of...
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7157379 |
Strained semiconductor structures
A method for in situ formation of low defect, strained silicon and a device formed according to the method are disclosed. In one embodiment, a silicon germanium layer is formed on a substrate, and...
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7157299 |
Nanofabrication of InAs/A1Sb heterostructures
A heterostructure comprising: a buffer layer; a bottom barrier layer formed on the buffer layer; a quantum well layer formed on the bottom barrier layer; a top barrier layer formed on the quantum...
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7148149 |
Method for fabricating nitride-based compound semiconductor element
A method for fabricating a nitride semiconductor element according to the present invention comprises the steps of: forming a nitride semiconductor layer 13 on a base substrate 11 ; forming, on...
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7147709 |
Non-contact etch annealing of strained layers
The present invention provides a method of forming a strained semiconductor layer. The method comprises growing a strained first semiconductor layer, having a graded dopant profile, on a wafer,...
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7135411 |
Method for etching mesa isolation in antimony-based compound semiconductor structures
Antimony-based semiconductor devices are formed over a substrate structure ( 10 ) that includes an antimony-based buffer layer ( 24 ) and an antimony-based buffer cap ( 26 ). Multiple epitaxial...
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7101805 |
Envelope follower end point detection in time division multiplexed processes
The present invention provides a method and an apparatus for establishing endpoint during an alternating cyclical etch process or time division multiplexed process. A substrate is placed within a...
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7098137 |
Micro corner cube array, method of making the micro corner cube array, and display device
A method of making a micro corner cube array includes the steps of: providing a substrate, at least a surface portion of which consists of cubic single crystals and which has a surface that is...
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7081410 |
Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization
A semiconductor structure including a semiconductor substrate, at least one first crystalline epitaxial layer on the substrate, the first layer having a surface which is planarized, and at least...
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7033944 |
Dual damascene process
A dual damascene process is disclosed. According to the dual damascene process of the present invention, a first recessed region through an intermetal dielectric layer is filled with a bottom...
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7031363 |
Long wavelength VCSEL device processing
A process for making a laser structure. The process is for the fabrication of a laser device such a vertical cavity surface emitting laser (VCSEL). The structures made involve dielectric and...
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7030028 |
Etching method
A dual damascene structure with a lesser degree of shoulder loss is achieved. In a method for forming a dual damascene structure having a shoulder in an organic low k film layer by dry-etching the...
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7022612 |
Method of removing etch residues
Organic etch residues are often left within vias formed by etching through resist masks. Since the etch is designed to expose an underlying metal layer and is directional in order to produce...
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6979584 |
Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device
A first Group III nitride compound semiconductor layer 31 is etched, to thereby form an island-like structure such as a dot-like, stripe-shaped, or grid-like structure, so as to provide a...
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6960526 |
Method of fabricating sub-100 nanometer field emitter tips comprising group III-nitride semiconductors
A method of producing a field emission device includes laying a group III-nitride semiconductor layer over a substrate, placing a photoresist mask over the group III-nitride semiconductor layer,...
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6951819 |
High efficiency, monolithic multijunction solar cells containing lattice-mismatched materials and methods of forming same
In one embodiment, a method of forming a multijunction solar cell having lattice mismatched layers and lattice-matched layers comprises growing a top subcell having a first band gap over a growth...
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6949437 |
Manufacturing method of semiconductor device including an anisotropic etching step
On a multilayer film which is formed on a semiconductor substrate, an opening which is opened on a base and an emitter is formed in the multilayer film, and after an SiGe/SiGeC film, which has a...
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6946400 |
Patterning method for fabricating integrated circuit
A patterning method for fabricating integrated circuits. The method includes forming a material layer over a substrate and then forming a photoresist layer over the material layer. The photoresist...
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6933242 |
Plasma etching
A substrate whose elemental constituents are selected from Groups III and V of the Periodic Table, is provided with pre-defined masked regions. Etching of the substrate comprising the steps of: a)...
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6921723 |
Etching method having high silicon-to-photoresist selectivity
Conventional methods of semiconductor fabrication and processing typically utilize three gas (e.g., HBr, Cl 2 and O 2 ) and four gas (e.g., HBr, Cl 2 , O 2 and CF 4 ) chemistries to perform gate...
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6908861 |
Method for imprint lithography using an electric field
A lithography process for creating patterns in an activating light curable liquid using electric fields followed by curing of the activating light curable liquid is described. The process involves...
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6846747 |
Method for etching vias
An improved method for etching a substrate that reduces the formation of pillars is provided by the present invention. In accordance with the method, the residence time of an etch gas utilized in...
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6836350 |
Device for coupling drive circuitry to electroabsorption modulator
Drive circuitry to provide a DC bias voltage and a high frequency modulation current to an electroabsorption modulator (EAM), including a high frequency modulation current source, a coupling...
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6833325 |
Method for plasma etching performance enhancement
A method for etching a feature in a layer through an etching mask is provided. A protective layer is formed on exposed surfaces of the etching mask and vertical sidewalls of the feature with a...
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6828245 |
Method of improving an etching profile in dual damascene etching
A plasma etching method for improving an etching profile including providing a substrate including an oxide containing insulating layer in a multilayer semiconductor device; providing a patterned...
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6824699 |
Method of treating an insulting layer
This invention relates to a method of heating an insulating layer, such as is found in semiconductor devices, in which a formation has been etched through a layer of resist comprising reactive...
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