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7622391 |
Method of forming an electrically conductive line in an integrated circuit
A method of forming a semiconductor structure comprises providing a semiconductor structure comprising a layer of a dielectric material provided over an electrically conductive feature. An opening...
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7622340 |
Method for manufacturing semiconductor device
A method for manufacturing a semiconductor device includes doping a surface of a silicon-containing dielectric film with nitrogen to change an etching rate of the silicon-containing dielectric film...
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7615164 |
Plasma etching methods and contact opening forming methods
The invention includes etching and contact opening forming methods. In one implementation, a plasma etching method includes providing a bottom powered plasma chamber that includes a plasma...
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7611995 |
Method for removing silicon oxide film and processing apparatus
A silicon dioxide film removing method is capable of removing a silicon dioxide film, such as a natural oxide film or a chemical oxide film, at a temperature considerably higher than a room...
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7611993 |
Plasma processing method and plasma processing apparatus
A plasma processing method for processing a sample by applying a high-frequency bias power periodically for each one period (T) which is divided along a time axis into a first sub-period (T 1 ) for...
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7608195 |
High aspect ratio contacts
A process for etching a insulating layer to produce an opening having an aspect ratio of at least 15:1 by supplying a first gaseous etchant having at least fifty (50) percent He to a plasma etch...
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7605088 |
Method of uniformly etching refractory metals, refractory metal alloys and refractory metal silicides
This invention is directed to a process for etching a semiconductor device using an etchant composition to form a predetermined etched pattern therein. The semiconductor device typically has a...
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7605069 |
Method for fabricating semiconductor device with gate
A method for fabricating a semiconductor device with a gate is provided. The method includes: forming a gate insulation layer over a substrate; sequentially forming a polysilicon layer, a silicide...
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7598178 |
Carbon precursors for use during silicon epitaxial film formation
The present invention provides systems and methods of forming an epitaxial film on a substrate. After heating in a process chamber, the substrate is exposed to a silicon source and at least one of...
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7589026 |
Method for fabricating a fine pattern in a semiconductor device
A method for fabricating a fine pattern in a semiconductor device includes forming a first polymer layer and a second polymer layer over an etch target layer. The second polymer layer is patterned...
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7589005 |
Methods of forming semiconductor structures and systems for forming semiconductor structures
A method and system for forming a semiconductor structure includes forming at least one material layer over a substrate. At least one portion of the material layer is etched with at least one first...
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7585776 |
Dry etching method of insulating film
It is an object to provide a high-precision method for forming deep holes of elliptic pattern, which can improve hole directionality on the short diameter side, the hole directionality being...
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7585775 |
System and method for faceting a masking layer in a plasma etch to slope a feature edge
A method is disclosed for applying a plasma etch process to facet a masking layer in a semiconductor device by creating sloped surfaces in the masking layer. The masking layer is plasma etched with...
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7582568 |
Method of forming a phase changeable structure
The present invention relates to a method of forming a phase changeable structure wherein an upper electrode is formed on a phase changeable layer. A material including fluorine can be provided to...
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7579283 |
Insulating layer patterning method, insulating layer formed by the insulating layer patterning method, display device having the insulating layer
Provided is an insulation layer patterning method employing a flowable oxide, which does not use a photo-resist. Also, an insulation layer pattern and display devices including the insulation layer...
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7573116 |
Etch aided by electrically shorting upper and lower sidewall portions during the formation of a semiconductor device
A method used to fabricate a semiconductor device comprises etching a dielectric layer, resulting in an undesirable charge buildup along a sidewall formed in the dielectric layer during the etch....
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7572737 |
Apparatus and methods for adjusting an edge ring potential substrate processing
A method for processing a substrate in a plasma processing chamber. The substrate is disposed above a chuck and surrounded by an edge ring while the edge ring being electrically isolated from the...
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7572736 |
Method of dry-etching semiconductor devices
A system, method and product of dry-etching a semiconductor device are disclosed, the system having a material supply for forming a material layer on the semiconductor substrate, a pattern for...
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7572734 |
Etch depth control for dual damascene fabrication process
The etch depth during trench over via etch of a dual damascene structure in a dielectric film stack is controlled to be the same over the dense area and the open area of a substrate and solve...
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7572732 |
Method to modulate etch rate in SLAM
Several techniques are described for modulating the etch rate of a sacrificial light absorbing material (SLAM) by altering its composition so that it matches the etch rate of a surrounding...
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7569492 |
Method for post-etch cleans
The current invention provides methods for performing a cleaning process that provides greater cleaning efficiency with less damage to device structures. After etching and photoresist stripping, a...
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7569488 |
Methods of making a MEMS device by monitoring a process parameter
Embodiments of the present invention relate to methods and systems for making a microelectromechanical system MEMS device comprising supplying an etchant to etch one or more sacrificial structures...
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7563723 |
Critical dimension control for integrated circuits
Methods of etching substrates with small critical dimensions and altering the critical dimensions are disclosed. In one embodiment, a sulfur oxide based plasma is used to etch an amorphous carbon...
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7560360 |
Methods for enhancing trench capacitance and trench capacitor
Methods for enhancing trench capacitance and a trench capacitor so formed are disclosed. In one embodiment a method includes forming a first portion of a trench; depositing a dielectric layer in...
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7554108 |
Forming a semiconductor device feature using acquired parameters
In one embodiment, a controller coupled to a focused ion beam tool can execute instructions to acquire parameters for a feature of a semiconductor device, determine a data array using the...
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7553773 |
Pressure control method and processing device
First and second pressure sensors 132 and 134 that perform pressure detection over different pressure detection ranges from each other detect the pressure within a process chamber 102 of an...
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7553679 |
Method of determining plasma ion density, wafer voltage, etch rate and wafer current from applied bias voltage and current
Plasma parameters such as plasma ion density, wafer voltage, etch rate and wafer current in the chamber are determined from external measurements on the applied RF bias electrical parameters such...
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7550394 |
Semiconductor device and fabrication process thereof
A method of fabricating a semiconductor device includes a dry etching process of a silicon surface. The dry etching process is conducted by an etching gas containing at least one gas species...
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7550392 |
Semiconductor device and method of manufacturing the same
A semiconductor device manufacturing method, includes a step of forming a first alumina film (underlying insulating film) 37 on a semiconductor substrate 20 , a step of forming a first...
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7550390 |
Method and apparatus for dielectric etching during integrated circuit fabrication
A method for multi-step dielectric etching includes discharge steps between each of the etching steps in order to help release accumulated charge on the wafer produced by the previous etching step....
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7547636 |
Pulsed ultra-high aspect ratio dielectric etch
A method for selectively etching an ultra high aspect ratio feature dielectric layer through a carbon based mask in an etch chamber is provided. A flow of an etch gas is provided, comprising a...
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7547635 |
Process for etching dielectric films with improved resist and/or etch profile characteristics
A process of etching openings in a dielectric layer includes supporting a semiconductor substrate in a plasma etch reactor, the substrate having a dielectric layer and a patterned photoresist...
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7538041 |
Magnetic recording medium, method of manufacturing the same, and intermediate for magnetic recording medium
A magnetic recording medium is provided in which a magnetic recording layer 5 is provided in a predetermined concavo-convex pattern on a substrate 1 A, a concave portion in a concavo-convex...
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7531460 |
Dry-etching method
A dry-etching method using an apparatus where a wafer is placed on either of a pair of opposed electrodes provided in an etching chamber, and high-frequency power is supplied to both the opposed...
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7528074 |
Method of manufacturing a semiconductor device and method of etching an insulating film
During etching of a contact hole, not only the energy of ion irradiation but also the gas composition are altered to change the etching from a high-rate etching to a low-rate etching, thereby...
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7521370 |
Method of operating a plasma reactor chamber with respect to two plasma parameters selected from a group comprising ion density, wafer voltage, etch rate and wafer current, by controlling chamber parameters of source power and bias power
A plasma reactor chamber is characterized by performing the following steps: (a) for each one of the chamber parameters, ramping the level of the one chamber parameter while sampling RF electrical...
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7521362 |
Methods for the optimization of ion energy control in a plasma processing system
A method in a plasma processing system for etching a feature through a dielectric layer of a dual damascene stack on a semiconductor substrate is disclosed. The method includes placing the...
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7517804 |
Selective etch chemistries for forming high aspect ratio features and associated structures
An interlevel dielectric layer, such as a silicon oxide layer, is selectively etched using a plasma etch chemistry including a silicon species and a halide species and also preferably a carbon...
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7517802 |
Method for reducing foreign material concentrations in etch chambers
A method of reducing foreign material concentrations in an etch chamber having inner chamber walls is described. The method includes the step of etching a work piece in the etch chamber such that...
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7517801 |
Method for selectivity control in a plasma processing system
A method in a plasma processing system for etching a feature through a given layer on a semiconductor substrate. The method includes placing the substrate in a plasma processing chamber of the...
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7510977 |
Method for manufacturing silicon carbide semiconductor device
A method for manufacturing a silicon carbide (SiC) semiconductor device is disclosed that uses dry etching with the use of high-density inductive coupled plasma (ICP). The method employs a first...
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7507673 |
Method for etching an object to be processed
An object to be process has a structure having an SiC film 61 and an organic Si-low dielectric constant film 62 formed on the SiC film 61 . The SiC film 61 is etched using a plasma produced...
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7507672 |
Plasma etching system and method
A system and a process for plasma etching a semiconductor device. The technique comprises periodically applying a heightened voltage bias during the plasma etching process so as to reduce...
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7504340 |
System and method for providing contact etch selectivity using RIE lag dependence on contact aspect ratio
A system and method is disclosed for providing contact etch selectivity for the etching of a plurality of contact etch holes through a dielectric layer of an integrated circuit. The method...
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7498266 |
Method for structuring of silicon substrates for microsystem technological device elements and associated silicon substrate
A method for structuring of silicon substrates for microsystem technological device elements, wherein the silicon substrate is covered with an etching mask and wherein the structures are furnished...
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7491649 |
Plasma processing apparatus
A plasma processing apparatus includes a chamber having a support for a substrate, and at least one gas inlet into the chamber. The apparatus is configured to alternately introduce an etch gas and...
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7488689 |
Plasma etching method
In a vacuum processing chamber, an etching is performed on an object to be processed having at least a mask layer formed in a predetermined pattern and a Ti layer, as a layer to be etched, formed...
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7482262 |
Method of manufacturing semiconductor device
Disclosed are embodiments relating to a method of manufacturing a semiconductor device that may improve the yield rate of the semiconductor device. In embodiments, the method may include preparing...
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7479458 |
Methods and apparatus for the optimization of highly selective process gases
A method for etching a barrier material on a semiconductor substrate is disclosed. The method includes placing the substrate in a plasma processing chamber of the plasma processing system, wherein...
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7479456 |
Gasless high voltage high contact force wafer contact-cooling electrostatic chuck
A method of electrostatically chucking a wafer while removing heat from the wafer in a plasma reactor includes providing a polished generally continuous surface on a puck, placing the wafer on the...
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