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7637269 Low damage method for ashing a substrate using CO2/CO-based process  
A method for removing a mask layer and reducing damage to a patterned dielectric layer is described. The method comprises disposing a substrate in a plasma processing system, wherein the substrate...
7622393 Method and apparatus for manufacturing a semiconductor device, control program thereof and computer-readable storage medium storing the control program  
A semiconductor device manufacturing method includes a plasma etching process for selectively plasma etching a silicon nitride film against a silicon oxide film formed under the silicon nitride...
7598177 Methods of filling trenches using high-density plasma deposition (HDP)  
Methods of filling trenches/gaps defined by circuit elements on an integrated circuit substrate are provided. The methods include forming a first high-density plasma layer on an integrated circuit...
7595005 Method and apparatus for ashing a substrate using carbon dioxide  
A method and apparatus for removing residue, such as etch reside, from a substrate with substantially reduced damage to the substrate in a plasma processing system is described. A plasma ashing...
7585777 Photoresist strip method for low-k dielectrics  
The present invention pertains to methods for removing unwanted material from a semiconductor wafer during wafer manufacturing. More specifically, the invention pertains to stripping photo-resist...
7585778 Method of etching an organic low-k dielectric material  
A method of etching organic low-k dielectric materials is provided herein. In one embodiment, a method of etching organic low-k dielectric materials includes placing a substrate comprising an...
7572386 Method of treating a mask layer prior to performing an etching process  
A method of pre-treating a mask layer prior to etching an underlying thin film is described. A thin film, such as a dielectric film, is etched using plasma that is enhanced with a ballistic...
7569488 Methods of making a MEMS device by monitoring a process parameter  
Embodiments of the present invention relate to methods and systems for making a microelectromechanical system MEMS device comprising supplying an etchant to etch one or more sacrificial structures...
7569492 Method for post-etch cleans  
The current invention provides methods for performing a cleaning process that provides greater cleaning efficiency with less damage to device structures. After etching and photoresist stripping, a...
7553772 Process and apparatus for simultaneous light and radical surface treatment of integrated circuit structure  
Process and apparatus provide reactive radicals generated from a remote plasma source which contact a portion of a substrate surface simultaneous with a contact of the same substrate surface with a...
7547621 LPCVD gate hard mask  
A gate hard mask is deposited on a gate structure using low pressure chemical vapor deposition (LPCVD). By doing so, the wet etch removal ratio (WERR) of the gate hard mask relative to the...
7528073 Dry etching method and diffractive optical element  
A dry etching method is provided, in which dry etching is performed in such a manner that a conductor to which an insulative substrate is attached is brought in electric, intimate contact with an...
7524769 Method and system for removing an oxide from a substrate  
A method and system for processing a substrate includes providing the substrate in a process chamber, where the substrate contains an oxide layer formed thereon, exciting a hydrogen-containing gas...
7488687 Methods of forming electrical interconnect structures using polymer residues to increase etching selectivity through dielectric layers  
Methods of forming electrical interconnect structures include forming a dielectric layer on a semiconductor substrate and forming a hard mask layer on the dielectric layer. A photoresist layer is...
7485581 Device with gaps for capacitance reduction  
A method for reducing capacitances between semiconductor devices is provided. A plurality of contact structures is formed in a dielectric layer. A mask is formed to cover the contact structures...
7482262 Method of manufacturing semiconductor device  
Disclosed are embodiments relating to a method of manufacturing a semiconductor device that may improve the yield rate of the semiconductor device. In embodiments, the method may include preparing...
7476623 Method for microstructuring flat glass substrates  
In the method for microstructuring flat glass substrates a substrate surface of a glass substrate is coated with at least one structured mask layer and subsequently exposed to a chemically reactive...
7429534 Etching a nitride-based heterostructure  
An improved solution for producing nitride-based heterostructure(s), heterostructure device(s), integrated circuit(s) and/or Micro-Electro-Mechanical System(s) is provided. A nitride-based etch...
7416973 Method of increasing the etch selectivity in a contact structure of semiconductor devices  
By providing an additional silicon dioxide based etch stop layer, a corresponding etch process for forming contact openings for directly connecting polysilicon lines and active areas may be...
7390755 Methods for post etch cleans  
The current invention provides methods for performing a cleaning process that provides greater cleaning efficiency with less damage to device structures. After etching and photoresist stripping, a...
7384876 Method and apparatus for determining consumable lifetime  
A plasma processing device comprising a gas injection system is described, wherein the gas injection system comprises a gas injection assembly body, a consumable gas inject plate coupled to the gas...
7365017 Method for finishing metal line for semiconductor device  
A method for finishing a metal line for a semiconductor device is disclosed, in which polymer generated when forming the metal line including aluminum and its alloy is effectively removed and the...
7312156 Method and apparatus for supporting a semiconductor wafer during processing  
A semiconductor wafer is processed while being supported without mechanical contact. Instead, the wafer is supported by gas streams emanating from a large number of passages in side sections...
7307025 Lag control  
A method for etching features in a silicon oxide based dielectric layer over a substrate, comprising performing an etch cycle. A lag etch partially etching features in the silicon oxide based...
7288484 Photoresist strip method for low-k dielectrics  
The present invention pertains to methods for removing unwanted material from a semiconductor wafer during wafer manufacturing. More specifically, the invention pertains to stripping photo-resist...
7288485 Device and method for anisotropic plasma etching of a substrate, particularly a silicon element  
A method and a device suitable for its execution are provided for the anisotropic plasma etching of a substrate, especially a silicon element. The device has a chamber and a plasma source for...
RE39895 Semiconductor integrated circuit arrangement fabrication method  
To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a...
7279427 Damage-free ashing process and system for post low-k etch  
A process is provided for substrate ashing following the etching of features in a low dielectric constant (low-k) layer. The low-k layer can include ultra-low-k material, or a porous low-k...
7268080 Method for printing contacts on a substrate  
A method for printing contacts utilizes photolithographic pattern reversal. A negative of the contact is printed on a resist layer. Unexposed portions of the resist layer are stripped to expose a...
7250373 Method and apparatus for etching material layers with high uniformity of a lateral etch rate across a substrate  
A method and apparatus for etching material layers with high uniformity of a lateral etch rate across a substrate using a gas mixture that includes a passivation gas. The passivation gas is...
7226869 Methods for protecting silicon or silicon carbide electrode surfaces from morphological modification during plasma etch processing  
Methods for forming a protective polymeric coating on a silicon or silicon-carbide electrode of a plasma processing chamber are provided. The polymeric coating provides protection to the underlying...
7217665 Method of plasma etching high-K dielectric materials with high selectivity to underlying layers  
A method of plasma etching a layer of dielectric material having a dielectric constant that is greater than four (4). The method includes exposing the dielectric material layer to a plasma...
7212878 Wafer-to-wafer control using virtual modules  
The invention relates to controlling a semiconductor processing system. Among other things, the invention relates to a run-to-run controller to create virtual modules to control a multi-pass...
7205235 Method for reducing corrosion of metal surfaces during semiconductor processing  
A semiconductor process exposes metal in anticipation of an additional processing step that includes a deposition of a layer. Between the two processing steps, the exposed metal is exposed to...
7192878 Method for removing post-etch residue from wafer surface  
A low-k dielectric film is deposited on the wafer. A metal layer is then deposited over the low-k dielectric film. A resist pattern is formed over the metal layer. The resist pattern is then...
7189653 Etching method and etching apparatus  
A mask material layer 102 of a desired pattern is formed on a silicon oxide film 101 . The exposed parts of the silicon oxide film 101 is etched in accordance with the pattern of the mask...
7148073 Methods and systems for preparing a copper containing substrate for analysis  
Methods and systems for preparing a substrate for analysis are provided. One method includes removing a portion of a copper structure on the substrate using an etch chemistry in combination with an...
7129171 Selective oxygen-free etching process for barrier materials  
A method of etching a barrier layer in an integrated circuit (IC) wherein said barrier layer is composed of silicon nitride or silicon carbide. The method comprises receiving an etched IC structure...
7115524 Methods of processing a semiconductor substrate  
The invention includes methods of processing semiconductor substrates. In one implementation, a semiconductor substrate is provided which has an outer surface. Such surface has a peripheral region...
7109123 Silicon etching method  
A Si etching method etches a Si wafer held on a susceptor placed in a processing vessel by a plasma-assisted etching process. A mixed etching gas prepared by mixing fluorosulfur gas, such as SF 6 ...
7105100 System and method for gas distribution in a dry etch process  
A system and method for distributing gas to a substrate in a dry etch chamber make use of different flow channels to distribute the gas to different portions of a substrate. A first flow channel...
7094706 Device and method for etching a substrate by using an inductively coupled plasma  
A device and a method for etching a substrate, in particular a silicon body, by using an inductively coupled plasma. A high-frequency electromagnetic alternating field is generated using an ICP...
7084074 CVD gas injector and method therefor  
Chemical vapor deposition (CVD) is enhanced by compensating for a depleted gas concentration zone in a CVD reactor. According to an example embodiment of the present invention, a chemical-vapor...
7053000 System, method and apparatus for constant voltage control of RF generator for optimum operation  
A system and method of generating RF includes an RF generator, a variable DC power supply, and a comparator. The RF generator has an RF output coupled to an input of the transducer. The variable DC...
7037846 Method and apparatus for micro-jet enabled, low energy ion generation and transport in plasma processing  
A method for creating and transporting low-energy ions for use in plasma processing of a semiconductor wafer is disclosed. In an exemplary embodiment of the invention, the method includes...
7037810 Method of replacing atmosphere of chamber apparatus, chamber apparatus, electro-optic apparatus, and organic EL device  
An atmosphere of an inert gas inside a chamber room in a chamber apparatus is replaced with an outside air by opening a discharge passage in the chamber room and by closing a gas supply passage for...
7033954 Etching of high aspect ration structures  
Plasma etching processes using a plasma containing fluorine as well as bromine and/or iodine are suited for high aspect ratio etching of trenches, contact holes or other apertures in silicon oxide...
7033952 Apparatus and method using a remote RF energized plasma for processing semiconductor wafers  
Chemical generator and method for generating a chemical species at a point of use such as the chamber of a reactor in which a workpiece such as a semiconductor wafer is to be processed. The species...
7033874 Method of forming insulating film and method of fabricating semiconductor device including plasma bias for forming a second insulating film  
With keeping an atmosphere including oxygen within a chamber and with a wafer kept at a low temperature, plasma generated within the chamber is biased toward the wafer, and the wafer is subjected...
7030027 Etching methods and apparatus for producing semiconductor devices  
A multi-layered film on a semiconductor substrate is etched with a multi-step etching process by sequentially providing a plurality of process gases having different compositions in a chamber. A...
Matches 1 - 50 out of 224 1 2 3 4 5 >