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7611993 |
Plasma processing method and plasma processing apparatus
A plasma processing method for processing a sample by applying a high-frequency bias power periodically for each one period (T) which is divided along a time axis into a first sub-period (T 1 ) for...
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7608196 |
Method of forming high aspect ratio apertures
A plasma etch process for etching a dielectric material employing two primary etchants at low flows and pressures, and a relatively low temperature environment within the etch chamber. The two...
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7605089 |
Method of manufacturing an electronic device
A method of manufacturing an electronic device is provided wherein an interconnect is made using 193 nm lithography. No deformation of the desired linewidth takes place in that during a plasma gas...
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7605088 |
Method of uniformly etching refractory metals, refractory metal alloys and refractory metal silicides
This invention is directed to a process for etching a semiconductor device using an etchant composition to form a predetermined etched pattern therein. The semiconductor device typically has a...
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7597816 |
Wafer bevel polymer removal
A method of forming a semiconductor device is provided. A wafer with a dielectric layer disposed under a photoresist mask is placed in an etch chamber. The dielectric layer is etched. The wafer is...
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7595005 |
Method and apparatus for ashing a substrate using carbon dioxide
A method and apparatus for removing residue, such as etch reside, from a substrate with substantially reduced damage to the substrate in a plasma processing system is described. A plasma ashing...
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7592267 |
Method for manufacturing semiconductor silicon substrate and apparatus for manufacturing the same
This invention provides a method for manufacturing a semiconductor silicon substrate by use of carbon dioxide in a supercritical state, which method is capable of making the semiconductor silicon...
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7585780 |
Method for manufacturing semiconductor device
A method for manufacturing a semiconductor device comprises: forming an interlayer insulating film including a storage node contact plug over a semiconductor substrate; forming an etching barrier...
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7585777 |
Photoresist strip method for low-k dielectrics
The present invention pertains to methods for removing unwanted material from a semiconductor wafer during wafer manufacturing. More specifically, the invention pertains to stripping photo-resist...
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7585775 |
System and method for faceting a masking layer in a plasma etch to slope a feature edge
A method is disclosed for applying a plasma etch process to facet a masking layer in a semiconductor device by creating sloped surfaces in the masking layer. The masking layer is plasma etched with...
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7585685 |
Method of determining wafer voltage in a plasma reactor from applied bias voltage and current and a pair of constants
The voltage of a wafer on the pedestal of an RF plasma reactor is instantly determined from the applied bias current and the applied bias voltage sampled during plasma processing of the wafer using...
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7582569 |
Distributor and distributing method, plasma processing system and method, and process for fabricating LCD
A distributor ( 30 ) includes a square waveguide ( 31 ) to be connected to a microwave oscillator ( 20 ) and a square waveguide ( 41 ) having a plurality of openings ( 43 ) formed in a narrow wall...
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7579228 |
Disposable organic spacers
A method for making a semiconductor device is provided, comprising (a) providing a semiconductor structure comprising a first gate electrode ( 210 ); (b) forming a first set of organic spacers (...
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7578945 |
Method and apparatus for tuning a set of plasma processing steps
In a plasma processing system, a method of tuning of a set of plasma processing steps is disclosed. The method includes striking a first plasma comprising neutrals and ions in a plasma reactor of...
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7578944 |
Apparatus for generating gas plasma, gas composition for generating plasma and method for manufacturing semiconductor device using the same
A method for manufacturing a semiconductor device may include: forming a main magnetic field having an axis, and forming a subsidiary magnetic field substantially parallel to the axis; applying an...
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7572686 |
System for thin film deposition utilizing compensating forces
A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film...
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7569488 |
Methods of making a MEMS device by monitoring a process parameter
Embodiments of the present invention relate to methods and systems for making a microelectromechanical system MEMS device comprising supplying an etchant to etch one or more sacrificial structures...
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7563722 |
Method of making a textured surface
A method of micro- and nanotexturing of various solid surfaces in plasma where carbon nanotubes are used as an etch mask. The method allows obtaining textures with feature sizes that can be...
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7557025 |
Method of etching a dielectric layer to form a contact hole and a via hole and damascene method
A method of etching a dielectric layer by a conductive mask includes providing the dielectric layer on a substrate, forming a pattern conductive mask on the dielectric layer, the pattern conductive...
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7557019 |
Electromagnetic treatment in atmospheric-plasma coating process
A plasma is produced in a treatment space ( 58 ) by diffusing a plasma gas at atmospheric pressure and subjecting it to an electric field created by two metallic electrodes ( 54,56 ) separated by a...
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7556970 |
Method of repairing damaged film having low dielectric constant, semiconductor device fabricating system and storage medium
A damaged layer repairing method repairs a damaged layer formed in a surface of a SiOCH film having a low dielectric constant film, containing silicon, carbon, oxygen and hydrogen and formed on a...
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7553679 |
Method of determining plasma ion density, wafer voltage, etch rate and wafer current from applied bias voltage and current
Plasma parameters such as plasma ion density, wafer voltage, etch rate and wafer current in the chamber are determined from external measurements on the applied RF bias electrical parameters such...
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7550390 |
Method and apparatus for dielectric etching during integrated circuit fabrication
A method for multi-step dielectric etching includes discharge steps between each of the etching steps in order to help release accumulated charge on the wafer produced by the previous etching step....
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7547636 |
Pulsed ultra-high aspect ratio dielectric etch
A method for selectively etching an ultra high aspect ratio feature dielectric layer through a carbon based mask in an etch chamber is provided. A flow of an etch gas is provided, comprising a...
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7547635 |
Process for etching dielectric films with improved resist and/or etch profile characteristics
A process of etching openings in a dielectric layer includes supporting a semiconductor substrate in a plasma etch reactor, the substrate having a dielectric layer and a patterned photoresist...
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7547584 |
Method of reducing charging damage to integrated circuits during semiconductor manufacturing
An integrated circuit die includes thereon a first device region, a second device region and a non-active region. A first implant mask, which covers the second device region and the non-active...
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7540971 |
Plasma etch process using polymerizing etch gases across a wafer surface and additional polymer managing or controlling gases in independently fed gas zones with time and spatial modulation of gas content
A plasma etch process etches high aspect ratio openings in a dielectric film on a workpiece in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the...
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7538038 |
Method of removing resist, semiconductor device thereby and method of manufacturing a semiconductor device
Disclosed is a method of removing resist preventing increase of dielectric constant of low permittivity insulating films and preventing remains of resist. Using a resist mask, a protection...
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7535688 |
Method for electrically discharging substrate, substrate processing apparatus and program
The present invention provides a substrate processing apparatus that executes electrical discharge processing before detaching a substrate held onto an electrostatic chuck of a lower electrode...
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7531460 |
Dry-etching method
A dry-etching method using an apparatus where a wafer is placed on either of a pair of opposed electrodes provided in an etching chamber, and high-frequency power is supplied to both the opposed...
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7524769 |
Method and system for removing an oxide from a substrate
A method and system for processing a substrate includes providing the substrate in a process chamber, where the substrate contains an oxide layer formed thereon, exciting a hydrogen-containing gas...
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7521369 |
Selective removal of rare earth based high-k materials in a semiconductor device
A method is disclosed for the selective removal of rare earth based high-k materials such as rare earth scandate high-k materials (e.g. DyScO 3 ) over silicon or silicon dioxide. As an example Dy...
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7521362 |
Methods for the optimization of ion energy control in a plasma processing system
A method in a plasma processing system for etching a feature through a dielectric layer of a dual damascene stack on a semiconductor substrate is disclosed. The method includes placing the...
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7520999 |
Method of processing a workpiece in a plasma reactor with dynamic adjustment of the plasma source power applicator and the workpiece relative to one another
A method for processing a workpiece in a plasma reactor chamber by applying RF source power to inner and outer source power applicators, and introducing a process gas into the reactor while...
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7517805 |
***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Method of in-situ ash strip to eliminate memory effect and reduce wafer damage
An in-situ ashing method for stripping a photoresist layer following a fluorocarbon based etch that transfers a pattern through a dielectric layer is disclosed. The method is especially effective...
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7517803 |
Silicon parts having reduced metallic impurity concentration for plasma reaction chambers
Silicon parts of a semiconductor processing apparatus containing low levels of metal impurities that are highly mobile in silicon are provided. The silicon parts include, for example, rings,...
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7517802 |
Method for reducing foreign material concentrations in etch chambers
A method of reducing foreign material concentrations in an etch chamber having inner chamber walls is described. The method includes the step of etching a work piece in the etch chamber such that...
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7517801 |
Method for selectivity control in a plasma processing system
A method in a plasma processing system for etching a feature through a given layer on a semiconductor substrate. The method includes placing the substrate in a plasma processing chamber of the...
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7514014 |
High density plasma chemical vapor deposition process
A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high...
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7510978 |
Method for forming mask for using dry-etching and method for forming fine structure pattern
In the invention of this application, the resist pattern having a given pattern of opening concavity is formed on the component to be dry etched, the aqueous solution containing a water-soluble...
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7510976 |
Dielectric plasma etch process with in-situ amorphous carbon mask with improved critical dimension and etch selectivity
A plasma etch process for successively different layers, including an anti-reflection coating (ARC), an amorphous carbon layer (ACL) and a dielectric layer, with successively different etch...
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7504338 |
Method of pattern etching a silicon-containing hard mask
Disclosed herein is a method of pattern etching a layer of a silicon-containing dielectric material. The method employs a plasma source gas including CF 4 to CHF 3 , where the volumetric ratio of...
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7501069 |
Flexible structures for sensors and electronics
This invention provides free-standing structures, functionalized free-standing structures and functional devices that are flexible, including nano- and micromachined flexible fabrics comprising...
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7500397 |
Activated chemical process for enhancing material properties of dielectric films
A method for restoring a dielectric constant of a layer of a silicon-containing dielectric material having a first dielectric constant and at least one surface, wherein the first dielectric...
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7498271 |
Nitrogen based plasma process for metal gate MOS device
The present invention, in one embodiment, provides a method of forming a gate structure including providing a substrate including a semiconducting device region, a high-k dielectric material...
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7498268 |
Gas delivery system for semiconductor processing
The present invention is directed to improving defect performance in semiconductor processing systems. In specific embodiments, an apparatus for processing semiconductor substrates comprises a...
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7498226 |
Method for fabricating semiconductor device with step gated asymmetric recess
A method for fabricating a semiconductor device with a step gated asymmetric recess is provided. The method includes: forming an organic bottom anti-reflective coating (BARC) layer over a...
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7494934 |
Method of etching carbon-containing layer and method of fabricating semiconductor device
A method of etching a carbon-containing layer on a semiconductor substrate using a Si-containing gas and a related method of fabricating a semiconductor device in which a plurality of contact holes...
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7491649 |
Plasma processing apparatus
A plasma processing apparatus includes a chamber having a support for a substrate, and at least one gas inlet into the chamber. The apparatus is configured to alternately introduce an etch gas and...
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7488690 |
Silicon nitride film with stress control
An assembly comprises a multilayer nitride stack having nitride etch stop layers formed on top of one another, each of the nitride etch stop layers is formed using a film forming process. A method...
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