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9039911 Plasma-enhanced etching in an augmented plasma processing system  
Methods for etching a substrate in a plasma processing chamber having at least a primary plasma generating region and a secondary plasma generating region separated from said primary plasma...
9040426 Method for manufacturing semiconductor device  
A method for manufacturing a semiconductor device includes: forming a first active region, a second active region, an inactive region located between the first active region and the second active...
9034771 Cooling pedestal for dicing tape thermal management during plasma dicing  
Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a plasma etch chamber includes a plasma source...
9029267 Controlling temperature of a faraday shield  
A method for controlling thermal cycling of a faraday shield in a plasma process chamber is provided. The method includes: performing a first plasma processing operation on a first wafer in the...
9023227 Increased deposition efficiency and higher chamber conductance with source power increase in an inductively coupled plasma (ICP) chamber  
Embodiments described herein generally relate to a substrate processing system and related methods, such as an etching/deposition method. The method comprises (A) depositing a protective layer on...
9023733 Method for block-copolymer lithography  
The present disclosure relates to a method (10) for block-copolymer lithography. This method comprises the step of obtaining (12) a self-organizing block-copolymer layer comprising at least two...
9011707 Etching method using an at least semi-solid media  
An etching method that uses an etch reactant retained within at least a semi-solid media (120, 220, 224, 230). The etch reactant media is applied to selectively etch a surface layer (106, 218,...
9012304 Semiconductor die singulation method  
In one embodiment, a method of singulating semiconductor die from a semiconductor wafer includes forming a material on a surface of a semiconductor wafer and reducing a thickness of portions of...
9005462 Method for manufacturing silicon carbide semiconductor device  
In a method for manufacturing a silicon carbide semiconductor device, a conductive layer is formed on a silicon carbide layer. The silicon carbide layer and the conductive layer react with each...
9006844 Process and structure for high temperature selective fusion bonding  
A method to prevent movable structures within a MEMS device, and more specifically, in recesses having one or more dimension in the micrometer range or smaller (i.e., smaller than about 10...
9005463 Methods of forming a substrate opening  
A method of forming a substrate opening includes forming a plurality of side-by-side openings in a substrate. At least some of immediately adjacent side-by-side openings are formed in the...
8999856 Methods for etch of sin films  
A method of selectively etching silicon nitride from a substrate comprising a silicon nitride layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation...
8999184 Method for providing vias  
A method for forming via holes in an etch layer disposed below a patterned organic mask with a plurality of patterned via holes is provided. The patterned organic mask is treated by flowing a...
8992724 Plasma processing apparatus and plasma processing method  
A plasma processing apparatus includes a processing chamber which plasma-processes a sample, a first high-frequency power supply which supplies first high-frequency power for plasma generation to...
8993352 Plasma processing method and plasma processing apparatus  
A plasma processing method is used to etch a multilayered material having a stacked structure, in which a first magnetic layer, an insulating layer, a second magnetic layer, and a mask material...
8993449 Etching method  
There is provided an etching method which can form trenches or via holes having desired aspect ratios and shapes in a to-be-processed object made of silicon. The etching method includes: a...
8993422 Process tools and methods of forming devices using process tools  
In accordance with an embodiment of the present invention, a process tool includes a chuck configured to hold a substrate. The chuck is disposed in a chamber. The process tool further includes a...
8987143 Hydrogen plasma cleaning of germanium oxide surfaces  
Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A...
8986558 Plasma etching method, plasma etching device, and method for producing photonic crystal  
A plasma etching method capable of oblique etching with a high aspect ratio and high uniformity is provided. In the plasma etching method, a base body is etched with a high aspect ratio by the...
8980111 Sidewall image transfer method for low aspect ratio patterns  
A method for patterning a substrate is described. The patterning method may include conformally depositing a material layer over a pattern according to a conformal deposition process, selectively...
8980760 Methods and apparatus for controlling plasma in a process chamber  
Methods and apparatus for controlling a plasma are provided herein. In some embodiments, a method may include supplying a first RF signal having a first frequency and a first period from an RF...
8980764 Method and apparatus for plasma dicing a semi-conductor wafer  
The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the...
8974682 Self-assembled pattern forming method  
A self-assembled pattern forming method in an embodiment includes: forming a guide pattern on a substrate; forming a layer of a first polymer; filling a first block copolymer; and phase-separating...
8974683 Method and system for modifying resist openings using multiple angled ions  
A method of reducing roughness in an opening in a surface of a resist material disposed on a substrate, comprises generating a plasma having a plasma sheath and ions therein. The method also...
8975191 Plasma etching method  
There is provided a plasma etching method including a first process of etching an intermediate layer, which contains silicon and nitrogen and is positioned below a resist mask formed on a surface...
8974684 Synchronous embedded radio frequency pulsing for plasma etching  
Methods for etching a substrate are provided herein. In some embodiments, a method of etching a substrate may include generating a plasma by providing only a first RF signal having a first...
8975188 Plasma etching method  
A plasma etching method is provided for forming a hole using a first processing gas to etch a silicon layer of a substrate to be processed including a silicon oxide film that is formed into a...
8975185 Forming charge trap separation in a flash memory semiconductor device  
During formation of a charge trap separation in a semiconductor device, a polymer deposition is formed in a reactor using a first chemistry. In a following step, a second chemistry can be used to...
8968588 Low electron temperature microwave surface-wave plasma (SWP) processing method and apparatus  
A surface wave plasma (SWP) source couples pulsed microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). To...
8969209 Method for removing oxide  
A method for removing oxide is described. A substrate is provided, including an exposed portion whereon a native oxide layer has been formed. A removing oxide process is performed to the substrate...
8969210 Plasma etching apparatus, plasma etching method, and semiconductor device manufacturing method  
There is provided a plasma etching apparatus provided for performing an etching in a desirable shape. The plasma etching apparatus includes a processing chamber 12 for performing a plasma process...
8962452 Semiconductor die singulation apparatus and method  
In one embodiment, a method of singulating semiconductor die from a semiconductor wafer includes forming a material on a surface of a semiconductor wafer and reducing a thickness of portions of...
8961805 Dry etching method for metal film  
A method for performing dry etching on a metal film containing Pt via a mask layer includes performing dry etching on the metal film by generating a plasma of an etching gas including a gaseous...
8956978 Semiconductor device, method for manufacturing semiconductor single-walled nanotubes, and approaches therefor  
Nanotube devices and approaches therefore involve the formation and/or implementation of substantially semiconducting single-walled nanotubes. According to an example embodiment of the present...
8956979 Systems and methods for improving front-side process uniformity by back-side metallization  
Disclosed are systems and methods for improving front-side process uniformity by back-side metallization. In some implementations, a metal layer can be formed on the back side of a semiconductor...
8951385 Plasma processing apparatus and plasma processing method  
A plasma processing apparatus is offered which has evacuable vacuum vessel, processing chamber disposed inside the vacuum vessel and having inside space in which plasma for processing sample to be...
8946058 Method and apparatus for plasma dicing a semi-conductor wafer  
The present invention provides a method for plasma dicing a substrate, the method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the...
8946085 Semiconductor process and structure  
A semiconductor process includes the following steps. Firstly, a conductive substrate is provided. Then, at least one insulating pattern is formed on the conductive substrate. Thereafter at least...
8946076 Methods of fabricating integrated structures, and methods of forming vertically-stacked memory cells  
Some embodiments include methods of forming vertically-stacked memory cells. An opening is formed to extend partially through a stack of alternating electrically insulative levels and electrically...
8941145 Systems and methods for dry etching a photodetector array  
Systems and methods for dry eteching a photodetector array based on InAsSb are provided. A method for fabricating an array of photodetectors includes receiving a pattern of an array of...
8940642 Method of multiple patterning of a low-K dielectric film  
Methods of multiple patterning of low-k dielectric films are described. For example, a method includes forming and patterning a first mask layer above a low-k dielectric layer, the low-k...
8932947 Methods for forming a round bottom silicon trench recess for semiconductor applications  
Embodiments of the present invention provide methods to etching a recess channel in a semiconductor substrate, for example, a silicon containing material. In one embodiment, a method of forming a...
8932406 In-situ generation of the molecular etcher carbonyl fluoride or any of its variants and its use  
The molecular etcher carbonyl fluoride (COF2) or any of its variants, are provided for, according to the present invention, to increase the efficiency of etching and/or cleaning and/or removal of...
8927436 Thin film transistor and method of manufacturing trench, metal wire, and thin film transistor array panel  
The present invention relates to a method for forming a trench that can remove residual particles in a trench using a metal mask, a method for forming a metal wire, and a method for manufacturing...
8926745 Method for preparing low K material and film thereof  
A method for preparing a low dielectric constant (low k) material and a film thereof is provided. The method includes the following steps. A substrate is first put into a plasma generating...
8921199 Precision IC resistor fabrication  
A method for fabricating a resistor in a dielectric layer of an integrated circuit (IC) is disclosed. The method may include creating a trench with a first side, a second side opposing the first...
8916477 Polysilicon etch with high selectivity  
Provided are methods and systems for removing polysilicon on a wafer. A wafer can include a polysilicon layer and an exposed nitride and/or oxide structure. An etchant with a hydrogen-based...
8916056 Biasing system for a plasma processing apparatus  
A plasma processing apparatus includes a process chamber housing defining a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate...
8911637 Plasma-enhanced substrate processing method and apparatus  
A method for processing a substrate in a capacitively-coupled plasma processing system having a plasma processing chamber and at least an upper electrode and a lower electrode. The substrate is...
8912022 Methods for making light emitting diodes and optical elements  
A method for making a LED comprises following steps. A substrate having a surface is provided. A first semiconductor layer, an active layer and a second semiconductor pre-layer is formed on the...