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6875366 Plasma processing apparatus and method with controlled biasing functions  
Processing technique using plasma to process the surface of a sample such as semiconductor device. The phases of RF bias voltages applied to a substrate electrode and an antenna electrode opposed...
6875699 Method for patterning multilevel interconnects  
A method of forming a damascene structure above a substrate is provided. A low-k dielectric layer is formed over the substrate, wherein the low-k dielectric layer does not have a trench stop layer....
6875700 Ion-Ion plasma processing with bias modulation synchronized to time-modulated discharges  
A system for plasma processing using electron-free ion-ion plasmas, wherein the substrate bias waveform is synched to a pulsed RF drive. A delay is included between the end of an RF drive pulse and...
6875701 Nanotopography removing method  
To remove nanotopography (unevenness of wavelength: 0.2 mm through 20 mm, wave height: 1 through several hundreds nm) which has already been produced on a surface of a semiconductor wafer which has...
6872668 Multi-step tungsten etchback process to preserve barrier integrity in an integrated circuit structure  
An improved method is provided for etching back a tungsten layer that overlies a titanium nitride adhesion layer on a semiconductor structure. This method includes the steps of: (1) performing a...
6872322 Multiple stage process for cleaning process chambers  
A process for etching multiple layers on a substrate 25 in an etching chamber 30 and cleaning a multilayer etchant residue formed on the surfaces of the walls 45 and components of the etching...
6870187 Thin film transistor array panel and manufacturing method thereof  
A thin film transistor array panel is provided, which includes: a substrate; a gate electrode; a gate insulating layer formed on the gate electrode; a polysilicon layer formed on the gate...
6869888 E-beam flood exposure of spin-on material to eliminate voids in vias  
A method for forming a semiconductor device is described. The method comprises forming a first layer over a semiconductor substrate. At least one hole is formed through the first layer. A bottom...
6869885 Method for a tungsten silicide etch  
A tungsten silicide etch process allows for a high etch rate and about 90° sidewall profiles of etched features. According to an example embodiment, a substrate is placed into an etch zone and a...
6867145 Method for fabricating semiconductor device using photoresist pattern formed with argon fluoride laser  
The present invention provides a method for fabricating a semiconductor device with use of an ArF light source capable of minimizing deformations of a photoresist pattern for ArF during an etching...
6867137 Fabrication method for a semiconductor structure having a partly filled trench  
The present invention provides a fabrication method for a semiconductor structure having a partly filled trench, having the following steps: provision of a semiconductor structure ( 1, 5 ) having a...
6867144 Apparatus and method for plasma processing high-speed semiconductor circuits with increased yield  
A plasma etching method of a wafer includes the steps of electrostatically attracting the wafer which has a gate oxide film onto a wafer mounting electrode in a vacuum processing chamber,...
6864174 Iteratively selective gas flow control and dynamic database to achieve CD uniformity  
A method for compensating for CD variations across a semiconductor process wafer surface in a plasma etching process including providing a semiconductor wafer having a process surface including...
6861362 Self-aligned contact process implementing bias compensation etch endpoint detection and methods for implementing the same  
A method for enhancing the fabrication process of a self-aligned contact (SAC) structure is provided. The method includes forming a transistor structure on a surface of a substrate. The method also...
6858446 Plasma monitoring method and semiconductor production apparatus  
In certain embodiments a plasma is supplied from a plasma chamber 10 into a reaction chamber 18 of a plasma CVD apparatus. An electrode 22 is disposed in the reaction chamber 18 . A...
6852638 Selective base etching  
A method for selective etching in the manufacture of a semiconductor device comprises: forming a layer ( 6 ) of silicon-germanium on a substrate ( 1 ) of monocrystalline silicon or on a substrate...
6852636 Insitu post etch process to remove remaining photoresist and residual sidewall passivation  
A method for performing a metallic etch, etch mask stripping, and removal of residual sidewall passivation in a single etch chamber. A wafer is placed in an etch chamber. A metal etch is performed...
6852637 Method of etching a mask layer and a protecting layer for metal contact windows  
A method of etching a mask layer as a protecting layer for metal contact windows uses a victim layer with slopes to avoid undercutting. First, a mask layer is formed on a semiconductor substrate....
6849193 Highly selective process for etching oxide over nitride using hexafluorobutadiene  
An oxide etching process, particularly useful for selectively etching oxide over a feature having a non-oxide composition, such as silicon nitride and especially when that feature has a corner that...
6849389 Method to prevent pattern collapse in features etched in sulfur dioxide-containing plasmas  
Disclosed is an in-situ process that prevents pattern collapse from occurring after they have been etched in S02-containing plasmas. The developed process involving treating the etched wafer to...
6846424 Plasma-assisted dry etching of noble metal-based materials  
A process for removing and/or dry etching noble metal-based material structures, e.g., iridium for electrode formation for a microelectronic device. Etch species are provided by plasma formation...
6846746 Method of smoothing a trench sidewall after a deep trench silicon etch process  
Disclosed herein is a method of smoothing a trench sidewall after a deep trench silicon etch process which minimizes sidewall scalloping present after the silicon trench etch. The method comprises...
6846745 High-density plasma process for filling high aspect ratio structures  
Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly...
6844265 Etching method  
To provide an etching method for broadening a trench opening between patterns of an etching mask in a dry process. The etching method of a semiconductor substrate in which silicon and a silicon...
6844264 Dry etching method  
When the Cu-containing aluminum film is dry-etched with etching gas containing chlorine gas, the gas stay time τ of the etching gas staying in the chamber, which is expressed by P·V/Q, where P...
6841483 Unique process chemistry for etching organic low-k materials  
Method for etching a feature in an integrated circuit wafer with minimized effect of micromasking. The method introduces a flow of etchant gas including a fluorocarbon gas to the wafer, and uses...
6841484 Method of fabricating a magneto-resistive random access memory (MRAM) device  
A method of etching a multi-layer magnetic stack (e.g., layers of cobalt-iron alloy (CoFe), ruthenium (Ru), platinum-manganese alloy (PtMn), and the like) of a magneto-resistive random access...
6838386 Method for precision-processing a fine structure  
A two-dimensional crystalline film of ferritin 4 holding iron-oxide cores 1 is formed on a silicon substrate 6. The silicon substrate 6 is then etched by using at least the cores 1 as an...
6837967 Method and apparatus for cleaning deposited films from the edge of a wafer  
A plasma edge cleaning apparatus is configured to remove film deposits from a wafer edge. A gas distribution manifold is annular shaped and positioned to provide plasma process gases near the edge...
6835665 Etching method of hardly-etched material and semiconductor fabricating method and apparatus using the method  
A film of hardly-etched material formed on a substrate is etched using a mask formed on the film of hardly-etched material and a plasma, wherein the film of hardly-etched material is etched using...
6830622 Cerium oxide containing ceramic components and coatings in semiconductor processing equipment and methods of manufacture thereof  
A corrosion resistant component of semiconductor processing equipment such as a plasma chamber comprises a cerium oxide containing ceramic material as an outermost surface of the component. The...
6831018 Method for fabricating semiconductor device  
After forming a resist pattern on an insulating film deposited on a semiconductor substrate, the insulating film is subjected to plasma etching using an etching gas including carbon and fluorine...
6828250 Process for etching vias in organosilicate glass materials without causing RIE lag  
Process for etching features in wafers incorporating OSG dielectrics. The process results at once in minimal RIE lag, minimal bowing of the features formed by the etch process, good etch profiles,...
6828241 Efficient cleaning by secondary in-situ activation of etch precursor from remote plasma source  
An electro-negative cleaning or etchant gas, such as fluorine, that was ionized from a stable supply gas such as NH3 in a secondary chamber and recombined in the primary chamber, is re-ionized...
6828246 Gas delivering device  
A gas delivering device inside a gaseous reaction chamber capable of increasing gas flow in areas having a deficient supply of gas by forming additional holes in corresponding positions. Because a...
6828247 Method for etching organic film, method for fabricating semiconductor device and pattern formation method  
An organic film is etched by using plasma generated from an etching gas including a first gas containing, as a principal constituent, a compound including carbon, hydrogen and nitrogen and a second...
6827869 Method of micromachining a multi-part cavity  
The present disclosure pertains to our discovery of a particularly efficient method for etching a multi-part cavity in a substrate. The method provides for first etching a shaped opening,...
6828245 Method of improving an etching profile in dual damascene etching  
A plasma etching method for improving an etching profile including providing a substrate including an oxide containing insulating layer in a multilayer semiconductor device; providing a patterned...
6828243 Apparatus and method for plasma treatment  
A compensation ring 31 disposed to surround a periphery of a wafer W on a susceptor 30 is concentrically divided into an inside first compensation ring member 32 and an outside second...
6824627 Stepped upper electrode for plasma processing uniformity  
A plasma discharge electrode having a front surface with a central portion thereof including gas outlets discharging a process gas which forms a plasma and a peripheral portion substantially...
6825125 Thin-film-transistor-array substrate, thin-film-transistor-array fabrication method, and display device  
A TFT array substrate 10 of the present invention includes an insulating substrate 12 , thin-film transistors formed on the insulating substrate 12 in a matrix, and wirings 46 electrically...
6821905 Method for avoiding carbon and nitrogen contamination of a dielectric insulating layer  
A method for preventing carbon and nitrogen penetration from a deposited overlayer into a dielectric insulating layer to improve a subsequent photolithographic patterning and anisotropic etching...
6821907 Etching methods for a magnetic memory cell stack  
A method and apparatus for etching a magnetic memory cell stack are described. More particularly, HCl is used as a main etchant gas for etching a magnetic memory cell stack. HCl is used in part to...
6821904 Method of blocking nitrogen from thick gate oxide during dual gate CMP  
In accordance with the objectives of the invention a new method is provided for the creation of layers of gate oxide having an unequal thickness. Active surface regions are defined over the surface...
6821451 Dry etching method, microfabrication process and dry etching mask  
A dry etching is performed using a mask made of a tantalum or a tantalum nitride under a reaction gas of a carbon monoxide with an additive of a nitrogen containing compound gas.
6821880 Process of dual or single damascene utilizing separate etching and DCM apparati  
A process of dual damascene or damascene. The dual damascene process entails providing an etching apparatus, a DCM machine and a wafer, the wafer having a metal line, a stop layer, a dielectric...
6821903 Method for making an integrated optical circuit  
In order to manufacture an integrated optical circuit, a first mask is formed on a first region of a substrate and defines the shape of at least one optical device (such as a waveguide). A second...
6821901 Method of through-etching substrate  
A method of through-etching a substrate that is simplified and by which the flow of ions can be kept to be regular during a plasma dry etching process, is provided. According to this method, a...
6821900 Method for dry etching deep trenches in a substrate  
A method for etching trenches in a substrate secures a wafer to an electrode in a plasma chamber and heats the wafer to a temperature of greater than 200 degrees Celsius. The wafer is exposed to a...
6818562 Method and apparatus for tuning an RF matching network in a plasma enhanced semiconductor wafer processing system  
A method and apparatus for operating a matching network within a plasma enhanced semiconductor wafer processing system that uses pulsed power to facilitate plasma processing.
Matches 401 - 450 out of 1108 < 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 >