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6933242 |
Plasma etching
A substrate whose elemental constituents are selected from Groups III and V of the Periodic Table, is provided with pre-defined masked regions. Etching of the substrate comprising the steps of: a)...
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6933239 |
Method for removing conductive residue
A method for removing conductive residue from a layer on a semiconductor substrate by exposing the substrate to a gas comprising a fluorine containing gas and a hydrogen containing gas. In one...
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6930048 |
Etching a metal hard mask for an integrated circuit structure
The invention is a method of etching an integrated circuit (IC) structure that includes a metal hard mask layer. The etching of the metal hard mask layer is performed by first feeding a gas mixture...
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6930047 |
Dry etching apparatus, etching method, and method of forming a wiring
An etching apparatus is provided, in which a plurality of electrodes are disposed for placing a substrate, high-frequency power sources as many as electrodes are provided, and the electrodes and...
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6931619 |
Apparatus for reshaping a patterned organic photoresist surface
The invention relates to a method of improving control over the dimensions of a patterned photoresist, which enables better control of the critical dimensions of a photomask or reticle which is...
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6926803 |
Confinement ring support assembly
A confinement ring support assembly for coupling together a plurality of confinement rings in a plasma processing chamber. The confinement ring support assembly includes a post having first end and...
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6927076 |
Method for recovering a plasma process
A method for automated monitoring and controlling of a semiconductor wafer plasma process including performing a plasma process in a plasma processing system to treat a semiconductor process wafer...
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6927173 |
Plasma processing method
Because of environmental pollution prevention laws, PFC (perfluorocarbon) and HFC (hydrofluorocarbon), both etching gases for silicon oxide and silicon nitride films, are expected to be subjected...
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6924239 |
Method for removal of hydrocarbon contamination on gate oxide prior to non-thermal nitridation using “spike” radical oxidation
The present invention is generally directed towards a method for removing hydrocarbon contamination from a substrate prior to a nitridation step, therein providing for a generally uniform...
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6921493 |
Method of processing substrates
This invention relates to a method of oxide hardmask aluminum etching in metal dry etch processors. It consists of two steps: the step of dry etching an aluminum interconnect stack by using an etch...
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6921725 |
Etching of high aspect ratio structures
Plasma etching processes using a plasma containing fluorine as well as bromine and/or iodine are suited for high aspect ratio etching of trenches, contact holes or other apertures in silicon oxide...
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6921723 |
Etching method having high silicon-to-photoresist selectivity
Conventional methods of semiconductor fabrication and processing typically utilize three gas (e.g., HBr, Cl 2 and O 2 ) and four gas (e.g., HBr, Cl 2 , O 2 and CF 4 ) chemistries to perform gate...
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6919280 |
Method of removing magnetoresistive sensor cap by reactive ion etching
During manufacture, a magnetoresistive sensor having a ferromagnetic free layer is commonly provided with a tantalum cap layer. The tantalum cap layer provides protection to the sensor during...
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6919279 |
Endpoint detection for high density plasma (HDP) processes
A method and system are provided for endpoint detection of plasma chamber cleaning or plasma etch processes. Optical emission spectroscopy is utilized to determine a spectral emission ratio of two...
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6915557 |
Method of assembling rotor structure
A method of assembling a rotor structure for a spindle motor for use in an information recording and playback apparatus is provided in which pollution of the recording medium due to gases emitted...
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6916697 |
Etch back process using nitrous oxide
A method for generating an organic plug within a via is described. The via resides in an integrated circuit (IC) structure having a silicon containing dielectric material. The method for generating...
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6916748 |
Method of forming emitter tips on a field emission display
A method of forming emitter tips on a field emission display. A conductive layer is formed on a substrate, and then a photoresist layer is formed on the conductive layer wherein the photoresist...
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6916746 |
Method for plasma etching using periodic modulation of gas chemistry
A method for etching a layer over a substrate is provided. A gas-modulated cyclic process is performed for more than three cycles. Each cycle comprises performing a protective layer forming phase...
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6916747 |
Method of manufacturing amorphous metal oxide film and methods of manufacturing capacitance element having amorphous metal oxide film and semiconductor device
A film deposition process for depositing an amorphous metal oxide film, for example, an amorphous tantalum oxide film, and a film treatment process for improving the film quality of the amorphous...
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6914005 |
Plasma etching method
A plasma etching method and apparatus in which a processing gas is supplied from a shower plate arranged on an electrode opposed to an electrode for generating a plasma or a sample toward the...
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6911395 |
Method of making borderless contacts in an integrated circuit
According to one embodiment ( 100 ), a method of forming borderless contacts may include forming a composite layer over a first insulating layer ( 102 ). A contact hole may be formed through a...
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6911346 |
Method of etching a magnetic material
A method of etching a magnetic material (e.g., nickel-iron alloy (NiFe), cobalt-iron alloy (CoFe), and the like) using a gas mixture comprising a hydrogen halide gas and a fluorocarbon-containing...
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6908865 |
Method and apparatus for cleaning substrates
Generally, a method for pre-cleaning native oxides and other contaminants from apertures on a substrate is provided. In one embodiment, a method for pre-cleaning apertures on a substrate includes...
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6908846 |
Method and apparatus for detecting endpoint during plasma etching of thin films
A method for controlling a plasma etch process while etching a layer stack having a first layer disposed above an end-point generating layer is disclosed. The method includes etching through the...
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6905626 |
Notch-free etching of high aspect SOI structures using alternating deposition and etching and pulsed plasma
A method of preventing notching during a cyclical etching and deposition of a substrate with an inductively coupled plasma source is provided by the present invention. In accordance with the...
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6905971 |
Treatment of dielectric material to enhance etch rate
In one embodiment, the present invention relates to a method for pre-treating and etching a dielectric layer in a semiconductor device comprising the steps of: (A) pre-treating one or more exposed...
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6902683 |
Plasma processing apparatus and plasma processing method
A method of plasma-processing is provided which includes placing a sample on one of electrodes provided in a vacuum processing chamber and holding the sample onto the electrodes by an electrostatic...
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6903027 |
Method of forming dielectric film and dielectric film
A first interlayer insulating film ( 3 ) having low dielectric constant is formed on an underlying insulating film ( 2 ) and a second interlayer insulating film ( 4 ) is formed on the first...
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6903026 |
Sputter etch methods
A sputter etch method in the semiconductor fabrication is disclosed. A sputter etch method for etching a layer on a semiconductor substrate in a chamber by RF plasma, includes loading a substrate...
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6902646 |
Sensor array for measuring plasma characteristics in plasma processing environments
A plasma processing system is provided with diagnostic apparatus for making in-situ measurements of plasma properties. The diagnostic apparatus generally comprises a non-invasive sensor array...
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6900139 |
Method for photoresist trim endpoint detection
A method for forming semiconductor features, e.g., gates, line widths, thicknesses and spaces, produced by a photoresist trim procedure, in a closed loop process is presented. The methodology...
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6900104 |
Method of forming offset spacer manufacturing for critical dimension precision
A method for forming an offset spacer adjacent a CMOS gate structure with improved critical dimension control including providing a substrate that has a gate structure; forming at least one oxide...
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6900138 |
Oxygen plasma treatment for nitride surface to reduce photo footing
The present invention includes a method for preventing distortion in semiconductor fabrication. The method comprises providing a substrate comprising a film comprising silicon nitride. The...
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6897156 |
Vacuum plasma processor method
200 mm and 300 mm wafers are processed in vacuum plasma processing chambers that are the same or have the same geometry. Substantially planar excitation coils having different geometries for the...
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6897154 |
Selective etching of low-k dielectrics
The present invention provides a low-k dielectric etching process with high etching selectivities with respect to adjacent layers of other materials, such as an overlying photoresist mask and an...
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6897128 |
Method of manufacturing semiconductor device, plasma processing apparatus and plasma processing method
In a method of manufacturing a semiconductor device by dividing a semiconductor wafer 6, on which a plurality of semiconductor elements are formed, into individual pieces of the semiconductor...
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6897153 |
Etching gas composition for silicon oxide and method of etching silicon oxide using the same
Disclosed are an etching gas composition for etching silicon oxide and a method of etching silicon oxide using the same. The etching gas composition for etching silicon oxide consists essentially...
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6893973 |
Method of etching silicon nitride film and method of producing semiconductor device
Provided is a method of etching a silicon nitride film, which comprises subjecting the silicon nitride film located on copper to dry etching using a mixture of fluorocarbon gas and an inert gas as...
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6893971 |
Dry etching method and apparatus
A dry etching method and apparatus are provided which are capable of performing deep etching fabrication rapidly on a substrate of an InP-based compound semiconductor. Etching gas is fed into and...
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6893969 |
Use of ammonia for etching organic low-k dielectrics
Method for etching organic low-k dielectric using ammonia, NH3, as an active etchant. Processes using ammonia results in at least double the etch rate of organic low-k dielectric materials than...
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6893970 |
Plasma processing method
According to a plasma processing method, a process gas supplied into a process chamber is used to generate plasma from the process gas and process a substrate placed in the process chamber by means...
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6890858 |
Methods of forming materials over uneven surface topologies, and methods of forming insulative materials over and between conductive lines
In one aspect, the invention encompasses a semiconductor processing method of forming a material over an uneven surface topology. A substrate having an uneven surface topology is provided. The...
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6890862 |
Processes for vacuum treating workpieces, and corresponding process equipment
A process for the vacuum treatment of workpieces, includes loading the workpieces into a treatment facility, surface treating the workpieces in at least one vacuum station of the facility grouped...
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6887794 |
Pre-cleaning method of substrate for semiconductor device
A pre-cleaning method of a substrate for a semiconductor device includes preparing a chamber, the chamber including a plasma electrode at an outside of the chamber, a power supplying system...
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6887793 |
Method for plasma etching a wafer after backside grinding
A method for plasma etching a wafer after a backside grinding process which incorporates an oxidation pretreatment step is disclosed. The method includes the step of first grinding a backside of a...
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6884635 |
Control of power delivered to a multiple segment inject electrode
An RF power supply system ( 200 ) for use with an electrode ( 60 ) in a plasma reactor system ( 10 ) capable of supporting a plasma ( 32 ) with a plasma load impedance (Z R ), wherein the electrode...
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6884730 |
Method of etching a film of magnetic material and method of manufacturing a thin-film magnetic head
In a thin-film magnetic head, a top pole layer for defining the recording track width includes a first layer that touches a recording gap layer, and a second layer located on the first layer. The...
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6881608 |
Semiconductor processing equipment having improved process drift control
A plasma processing chamber including a slip cast part having a surface thereof exposed to the interior space of the chamber. The slip cast part includes free silicon contained therein and a...
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6878641 |
Composition and chemical vapor deposition method for forming organic low k dielectric films
Precursor compositions for the CVD formation of low k dielectric films on a substrate, e.g., as an interlayer dielectric for fabrication of microelectronic device structures. The precursor...
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6878636 |
Method for enhancing substrate processing
Embodiments of the invention generally provide a method for enhancing chemical reactions within a substrate processing chamber during a substrate processing sequence. The method generally includes...
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