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7306745 |
Method and apparatus for stabilizing a plasma
A workpiece is processed in a chamber by striking a plasma in the chamber, treating the workpiece by cyclically adjusting the processing parameters between at least a first step having a first set...
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7306696 |
Interferometric endpoint determination in a substrate etching process
In determining an endpoint of etching a substrate, light that is directed toward the substrate is reflected from the substrate. A wavelength of the light is selected to locally maximize the...
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7303996 |
High-K gate dielectric stack plasma treatment to adjust threshold voltage characteristics
A method for treating a gate structure comprising a high-K gate dielectric stack to improve electric performance characteristics including providing a gate dielectric layer stack including a binary...
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7300884 |
Pattern forming method, underlayer film forming composition, and method of manufacturing semiconductor device
According to an aspect of the invention, there is provided a pattern forming method comprising forming an underlayer film on a film to be worked which has been formed on a semiconductor substrate,...
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7297640 |
Method for reducing argon diffusion from high density plasma films
A two-step high density plasma-CVD process is described wherein the argon content in the film is controlled by using two different argon concentrations in the argon/silane/oxygen gas mixture used...
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7297637 |
Use of pulsed grounding source in a plasma reactor
A method for grounding a semiconductor substrate pedestal during a portion of a high voltage power bias oscillation cycle to reduce or eliminate the detrimental effects of feature charging during...
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7297635 |
Processing method
A processing method which, when an organic film layer such as a PR film layer 202 formed on the surface of a wafer W is to be removed from an SiO 2 film layer 204 below it by generating plasma...
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7294580 |
Method for plasma stripping using periodic modulation of gas chemistry and hydrocarbon addition
A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for...
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7288484 |
Photoresist strip method for low-k dielectrics
The present invention pertains to methods for removing unwanted material from a semiconductor wafer during wafer manufacturing. More specifically, the invention pertains to stripping photo-resist...
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7288008 |
Nonlithographic method of defining geometries for plasma and/or ion implantation treatments on a semiconductor wafer
A method for defining geometries in a semiconductor wafer supported on a plate electrode in a processing chamber includes forming a reusable refractory coated laminar mask. The reusable refractory...
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7288204 |
Method and arrangement for treating a substrate with an atmospheric pressure glow plasma (APG)
Method for generating an atmospheric pressure glow plasma (APG), wherein said plasma is generated in a discharge space between a plurality of electrodes. A dielectric is present on at least one of...
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RE39895 |
Semiconductor integrated circuit arrangement fabrication method
To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a...
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7282454 |
Switched uniformity control
A component delivery mechanism for distributing a component inside a process chamber is disclosed. The component is used to process a work piece within the process chamber. The component delivery...
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7279428 |
Method of preventing photoresist residues
A method to prevent photoresist residues formed in an aperture is provided. The method includes using a halogen-containing plasma treatment before the aperture is filled with a photoresist. Due to...
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7279114 |
Method for stabilizing etching performance
The invention is directed to an etching method for patterning a first material layer over a second material layer to expose a portion of the second material layer. The etching method comprises...
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7279427 |
Damage-free ashing process and system for post low-k etch
A process is provided for substrate ashing following the etching of features in a low dielectric constant (low-k) layer. The low-k layer can include ultra-low-k material, or a porous low-k...
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7273815 |
Etch features with reduced line edge roughness
A method for forming a feature in a layer with reduced line edge roughening is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist...
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7271105 |
Method for making a micro-fluid ejection device
A method of etching a semiconductor substrate. The method includes the steps of applying a photoresist etch mask layer to a device surface of the substrate. A select first area of the photoresist...
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7268084 |
Method for treating a substrate
A method of treating a substrate includes disposing the substrate in a processing chamber having a first chamber portion configured to define a plasma space and a second chamber portion configured...
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7268086 |
Method for reducing critical dimension and semiconductor etching method
A method of reducing critical dimension is provided. A dielectric layer is formed on a substrate. Then, a patterned photoresist is formed on the dielectric layer to expose part of the dielectric...
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7265023 |
Fabrication method for a semiconductor structure
The present invention provides a fabrication method for a semiconductor structure having the steps of providing a semiconductor substrate ( 1 ); providing and patterning a silicon nitride layer ( 3...
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7264850 |
Process for treating a substrate with a plasma
A process for depositing a diamond-like carbon film, which comprises providing a means for generating a sheet-like beam-type plasma region inside a vacuum vessel for depositing the diamond-like...
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7265056 |
Method for forming novel BARC open for precision critical dimension control
A method for forming an opening in a semiconductor device is provided. In one embodiment, a bottom anti-reflective coating (BARC) layer is formed overlying an insulation layer of a substrate. A...
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7262136 |
Modified facet etch to prevent blown gate oxide and increase etch chamber life
A modified facet etch is disclosed to prevent blown gate oxide and increase etch chamber life. The modified facet etch is a two-stage process. The first stage is a plasma sputter etch to form a...
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7261825 |
Method for the production of a micromechanical device, particularly a micromechanical oscillating mirror device
A method for producing a micromechanical device, e.g., a micromechanical oscillating mirror device, is provided. It is provided, starting from the front side of an SOI/EOI(epipoly on insulator)...
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7259104 |
Sample surface processing method
A surface processing method of a sample having a mask layer that does not contain carbon as a major component formed on a substance to be processed, the substance being a metal, semiconductor and...
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7256148 |
Method for treating a wafer edge
A method for treating an edge portion of a wafer with a plasma or select chemical formulation in order to enhance adhesion characteristics and inhibit delamination of a layer of material from the...
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7256131 |
Method of controlling the critical dimension of structures formed on a substrate
The present invention provides a method of patterning a substrate, the method including, inter alia, forming a multi-layered structure on the substrate formed from first, second and third...
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7256134 |
Selective etching of carbon-doped low-k dielectrics
The present invention includes a process for selectively etching a low-k dielectric material formed on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture...
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7255799 |
Method for selectively covering a micro machined surface
On a die that has etchings on a surface, firstly a sheet of negative photoresist is laid down which, by means of an exposure and subsequent development, is left only above the etchings; then, upon...
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7256130 |
Process for defining a chalcogenide material layer, in particular in a process for manufacturing phase change memory cells
A process for defining a chalcogenide material layer using a chlorine based plasma and a mask, wherein the portions of the chalcogenide material layer that are not covered by the mask are etched...
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7253117 |
Methods for use of pulsed voltage in a plasma reactor
A method and apparatus for providing a positive voltage spike to a semiconductor substrate pedestal during a portion of a high voltage power bias oscillation cycle to reduce or eliminate the...
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7253116 |
High ion energy and reative species partial pressure plasma ash process
A high ion energy and high pressure O 2 /CO-based plasma for ashing field photoresist material subsequent to via-level damascene processing. The optimized plasma ashing process is performed at...
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7252773 |
Clean for high density capacitors
One aspect of the invention relates to a method of cleaning high density capacitors. According to the method, the capacitors are cleaned with a plasma that includes fluorine-containing radicals....
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7250373 |
Method and apparatus for etching material layers with high uniformity of a lateral etch rate across a substrate
A method and apparatus for etching material layers with high uniformity of a lateral etch rate across a substrate using a gas mixture that includes a passivation gas. The passivation gas is...
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7250349 |
Method for forming ferroelectric memory capacitor
A ferroelectric memory capacitor is formed by forming a barrier layer, a first metal layer, a ferroelectric layer, a second metal layer, and a hard mask layer, on dielectric layer ( 70 ). Using the...
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7250361 |
Method for forming a bonding pad of a semiconductor device including a plasma treatment
Disclosed is a method for forming a bonding pad of a semiconductor device. The present invention provides a method for forming a bonding pad of a semiconductor device comprising the steps of: (a)...
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7232746 |
Method for forming dual damascene interconnection in semiconductor device
A method for forming a dual damascene interconnection in a semiconductor device, which is capable of preventing a lower metal film from being corroded. The method includes the steps of forming an...
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7229929 |
Multi-layer gate stack
A method of making a semiconductor structure, comprises etching a nitride layer with a plasma to form a patterned nitride layer. The nitride layer is on a semiconductor substrate, a photoresist...
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7229915 |
Method for manufacturing semiconductor device
A first insulating film, a second insulating film, a third insulating film, an antireflective film, and a resist film are formed in this order on a lower-layer wiring. After dry etching the third...
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7229563 |
Plasma etching of Ni-containing materials
An apparatus and method are described for etching Ni-containing films using gas phase plasma etching. Etching of Ti—Ni alloys is carried out by exposure to plasma comprising hydrogen halide (HX)...
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7229930 |
Selective etching of low-k dielectrics
The present invention provides a low-k dielectric etching process with high etching selectivities with respect to adjacent layers of other materials, such as an overlying photoresist mask and an...
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7226870 |
Forming of oblique trenches
A method for forming an oblique recess of minimum dimension smaller than 10 μm in a wafer arranged in a plasma etch reactor in which the plasma extends along the wafer surface, including forming...
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7226869 |
Methods for protecting silicon or silicon carbide electrode surfaces from morphological modification during plasma etch processing
Methods for forming a protective polymeric coating on a silicon or silicon-carbide electrode of a plasma processing chamber are provided. The polymeric coating provides protection to the underlying...
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7226868 |
Method of etching high aspect ratio features
A plasma processing system for and method of utilizing an improved etch chemistry for effectively etching high aspect ratio silicon features. The process chemistry employs precursor gases suitable...
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7226865 |
Process for forming pattern and method for producing liquid crystal display apparatus
A process for forming a pattern contains steps of: forming a first mask pattern on a film to be etched on a substrate; forming a first pattern of the film to be etched by using the first mask...
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7223699 |
Plasma etch reactor and method
A plasma etch reactor 20 includes a upper electrode 24 , a lower electrode 24 , a peripheral ring electrode 26 disposed therebetween. The upper electrode 24 is grounded, the peripheral...
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7220678 |
Method for etching of a silicon substrate and etching apparatus
A method for etching a silicon substrate is presented in which fast etching speed and etching structures with smooth and perpendicular wall surfaces are achieved. In the etching step, a constant...
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7217371 |
Optical control interface between controller and process chamber
The present invention relates to interfacing new sensors to incumbent controls. In particular, it relates to optically interfacing a new sensor, such as a spectrometer with plasma generator, to an...
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7214625 |
Method for manufacturing movable portion of semiconductor device
A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and...
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