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6461971 |
Method of residual resist removal after etching of aluminum alloy filmsin chlorine containing plasma
A method of removing remaining photoresist over an Al or Al alloy structure after etching the Al or Al alloy structure in chlorine based plasma, the Al or Al alloy structure being over a substrate,...
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6461970 |
Method of reducing defects in anti-reflective coatings and semiconductor structures fabricated thereby
A method of fabricating a substantially smooth-surfaced anti-reflective coating on a semiconductor device structure including generating a plasma from an inert gas in a process chamber in which the...
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6457477 |
Method of cleaning a copper/porous low-k dual damascene etch
A method of cleaning a low-k material etched opening, comprising the following steps. A semiconductor structure having an exposed device therein is provided. An etch stop layer is formed over the...
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6458685 |
Method of forming a self-aligned contact opening
A bulk semiconductor substrate is provided which has an active area received between at least two undoped silicon dioxide comprising substrate isolation regions. The substrate includes at least two...
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6458254 |
Plasma & reactive ion etching to prepare ohmic contacts
A method of making a low-resistance electrical contact between a metal and a layer of p-type CdTe surface by plasma etching and reactive ion etching comprising: a) placing a CdS/CdTe layer into a...
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6458723 |
High temperature implant apparatus
An ion implantation apparatus and method. The apparatus has a vacuum chamber and an ion beam generator to generate an ion beam in the vacuum chamber. The apparatus also has an implant wheel ( 10 ),...
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6455437 |
Method and apparatus for monitoring the process state of a semiconductor device fabrication process
A method and apparatus for monitoring process state using plasma attributes are provided. Electromagnetic emissions generated by a plasma are collected, and a detection signal having at least one...
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6455431 |
NH3 plasma descumming and resist stripping in semiconductor applications
In general, the present disclosure pertains to a method for removing photoresist from locations on a semiconductor structure where its presence is undesired. In one embodiment, a method is...
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6451703 |
Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas
An oxide etch process practiced in magnetically enhanced reactive ion etch (MERIE) plasma reactor. The etching gas includes approximately equal amounts of a hydrogen-free fluorocarbon, most...
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6451702 |
Methods for forming lateral trench optical detectors
A method for forming an optical detector device on a semiconductor substrate. The method includes forming a first set and a second set of trenches in the substrate, wherein trenches of the first...
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6451706 |
Attenuation of reflecting lights by surface treatment
A new method of avoiding resist notching in the formation of a polysilicon gate electrode in the fabrication of an integrated circuit device is described. Bare active areas are provided surrounded...
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6448184 |
Formation of diamond particle interconnects
Rough, conductive diamond film regions are formed on a substrate for establishing electrical contact with a surface mount semiconductor package, or the like. The substrate base is heated in a...
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6444584 |
Plasma etch method for forming composite silicon/dielectric/silicon stack layer
A method for forming a patterned composite stack layer within a microelectronics fabrication. There is first provided a substrate. There is then formed over the substrate a blanket first silicon...
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6440863 |
Plasma etch method for forming patterned oxygen containing plasma etchable layer
A method for forming a patterned oxygen containing plasma etchable layer. There is first provided a substrate. There is then formed upon the substrate a blanket oxygen containing plasma etchable...
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6440756 |
Reduction of plasma charge-induced damage in microfabricated devices
A method and apparatus for reducing plasma-induced charging damage in a semiconducting device are provided. The method includes exposing an article having a dielectric material susceptible to...
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6440864 |
Substrate cleaning process
A substrate cleaning method comprises exposing a substrate 30 to an energized process gas to remove residue 60 and resist material 50 from the substrate 30. In one version, the process gas...
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6436838 |
Method of patterning lead zirconium titanate and barium strontium titanate
In an embodiment of the present invention, a method is provided of patterning PZT layers or BST layers. For example, a PZT layer or a BST layer is plasma etched through a...
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6436837 |
Domed wafer reactor vessel window with reduced stress at atmospheric and above atmospheric pressures
A thermal reactor having a wafer chamber for containing at least one semiconductor wafer during processing. The thermal reactor contains a quartz window having an inward bow defining a concave...
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6436303 |
Film removal employing a remote plasma source
A method and device for removing film from a substrate are provided that take advantage of a remote plasma source to etch away undesired portions of films, such as dielectric films formed on a...
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6436731 |
Method of producing a semiconductor device comprising a cleaning process for removing silicon-containing material
A method of producing a semiconductor device is described. The semiconductor device has a semiconductor chip with wiring terminals, conductor tracks for the electrical connection of the...
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6433484 |
Wafer area pressure control
A plasma processing chamber is provided which provides improved wafer area pressure control. The plasma processing chamber is a vacuum chamber with a device connected for generating and sustaining...
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6432831 |
Gas distribution apparatus for semiconductor processing
A gas distribution system for uniformly or non-uniformly distributing gas across the surface of a semiconductor substrate. The gas distribution system includes a support plate and a showerhead...
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6432318 |
Dielectric etch process reducing striations and maintaining critical dimensions
An oxide etching recipe including a heavy hydrogen-free fluorocarbon having F/C ratios less than 2 such as C 4 F 6 or C 5 F 8 , an oxygen-containing gas such as O 2 , CO or CO 2 , a lighter...
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6429137 |
Solid state thermal switch
A solid state thermal switch providing thermal conductivity in an ON state and enhanced thermal isolation in an OFF state. The thermal switch is manufactured on a substrate by forming an oxide...
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6429132 |
Combination CMP-etch method for forming a thin planar layer over the surface of a device
A combination CMP-etch method for forming a thin planar layer over the surface of a device includes the steps of providing a substrate including a plurality of surface projections defining gaps...
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6426302 |
Process for producing semiconductor device
A plasma processing apparatus having a vacuum vessel and a supporting means for supporting a processing target in the vacuum vessel, the apparatus comprising means for introducing a gas into a...
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6420194 |
Method for extracting process determinant conditions from a plurality of process signals
A system and method for identifying events in a manufacturing process from a sequence of m-dimensional input data signals, m≧2 obtained from monitoring of the manufacturing process utilizing a...
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6417544 |
Diode-like plasma induced damage protection structure
A novel structured for a diode-like PID protection (DLPP) device structure and process are described. An N-well, three associate N+ regions and a P+ region are formed on a P substrate. The DLPP is...
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6417111 |
Plasma processing apparatus
A plasma processing method includes introducing at least one first processing gas into a processing chamber including a mounting stage supporting a substrate having a surface; generating a plasma...
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6417090 |
Damascene arrangement for metal interconnection using low k dielectric constant materials for etch stop layer
A method of forming a damascene structure in a semiconductor device arrangement uses a low k dielectric material in an etch stop layer that overlays a metal interconnect layer. The etch stop layer...
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6415198 |
Plasma etching of silicon using a chlorine chemistry augmented with sulfur dioxide
A method of etching silicon using a chlorine and sulfur dioxide gas chemistry. An embodiment of the method is accomplished using a 20 to 300 sccm of chlorine and 2 to 100 sccm of sulfur dioxide,...
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6413877 |
Method of preventing damage to organo-silicate-glass materials during resist stripping
A method for making an etched organo-silicate-glass (OSG) layer over a substrate is provided. Generally an OSG layer is placed over the substrate. A patterned resist mask is placed over the OSG...
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6410102 |
Plasma process method
A plasma process, which can fabricate a deposition film in short time and at low cost, which can fabricate a deposition film with excellent reproducibility, which can greatly decrease the cleaning...
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6410447 |
Process for removing photoresist material
A process for removing photoresist material without any residues left and damage to the in-process substrate is described. The present process for removing photoresist on an in-process substrate...
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6410449 |
Method of processing a workpiece using an externally excited torroidal plasma source
A method of processing a workpiece in a plasma reactor includes establishing a torroidal path for a plasma current to flow that passes near and transverse to the surface of said workpiece,...
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6410448 |
Plasma etch reactor and method for emerging films
A plasma etch reactor 20 includes a reactor chamber 22 with a grounded upper electrode 24 , a lower electrode 28 which is attached to a high frequency power supply 30 and a low frequency...
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6406991 |
Method of manufacturing a contact element and a multi-layered wiring substrate, and wafer batch contact board
In a method of manufacturing a contact element, provision is made of a laminated body which has an insulating film, an electrically conductive layer stacked on the insulating film, and bump holes...
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6406640 |
Plasma etching method
The present invention relates to a method of plasma etching and a method of operating a plasma etching apparatus in which a concentration of oxygen at flash striking is greater than a concentration...
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6406590 |
Method and apparatus for surface treatment using plasma
A method for treating a surface of a sample using plasma, including the steps of placing the sample in a predetermined atmosphere, locally supplying a reaction gas from a reaction gas supply...
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6401652 |
Plasma reactor inductive coil antenna with flat surface facing the plasma
The present invention is embodied in a plasma reactor with an inductive coil antenna facing the reactor chamber in which the windings of the coil antenna have a flattened cross-sectional shape, the...
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6403388 |
Nanomachining method for integrated circuits
A system and method provides for effective analysis of an integrated circuit having silicon on insulator (SOI) structure. According to one example embodiment of the present invention, the system...
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6403491 |
Etch method using a dielectric etch chamber with expanded process window
A method for etching a dielectric in a thermally controlled plasma etch chamber with an expanded processing window. The method is adapted to incorporate benefits of a the thermal control and high...
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6403487 |
Method of forming separated spacer structures in mixed-mode integrated circuits
A method is provided for forming separated spacer structures in a mixed-mode integrated circuit, which can be used to form spacer structures with different widths for the various kinds of devices...
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6403488 |
Selective SAC etch process
A method for plasma etching, comprising etching a structure with a plasma prepared from a gas mixture comprising: (i) an etching gas, and (ii) a strained cyclic (hydro)fluorocarbon gas, has a high...
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6403490 |
Method of producing a plasma by capacitive-type discharges with a multipole barrier, and apparatus for implementing such a method
A method of producing a plasma by capacitive discharges between an active electrode and a passive electrode within a sealed chamber at controlled pressure, the passive electrode being placed at a...
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6399508 |
Method for metal etch using a dielectric hard mask
The present disclosure provides a method for etching metal-comprising layers within a semiconductor structure using an inorganic dielectric hard masking layer. A typical stacked metal layer...
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6399510 |
Bi-directional processing chamber and method for bi-directional processing of semiconductor substrates
A semiconductor substrate processing chamber provides a bi-directional process gas flow for deposition or etching processes. The bi-directional gas flow provides uniformity of deposition layer...
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6399507 |
Stable plasma process for etching of films
In accordance with the present invention, process parameters are controlled to provide a stable etch plasma. We have discovered that it is possible to operate a stable plasma with a portion of the...
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6395631 |
Low dielectric constant dielectric layer fabrication method employing hard mask layer delamination
A method for forming, within a low dielectric constant dielectric layer formed upon a substrate employed within a microelectronics fabrication, a conductor pattern employing a hard mask cap layer....
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6395641 |
Apparatus and method for pulsed plasma processing of a semiconductor substrate
Apparatus and method for an improved etch process. A power source alternates between high and low power cycles to produce and sustain a plasma discharge. Preferably, the high power cycles couple...
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