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6713376 Method of manufacturing a contract element and a multi-layered wiring substrate, and wafer batch contact board  
In a method of manufacturing a contact element, provision is made of a laminated body which has an insulating film, an electrically conductive layer stacked on the insulating film, and bump holes...
6712983 Method of etching a deep trench in a substrate and method of fabricating on-chip devices and micro-machined structures using the same  
A method of etching a trench in a substrate using a dry plasma etch technique that allows precise control of lateral undercut. The method includes optionally forming at least one on-chip device or...
6709610 Isotropic dry cleaning process for noble metal integrated circuit structures  
A method for removing from a microelectronic device structure a noble metal residue including at least one metal selected from the group consisting of platinum, palladium, iridium and rhodium, by...
6706638 Method of forming opening in dielectric layer  
A method of forming openings in the dielectric layer. The method includes an ion implantation step to reduce a lateral etching in a chemical vapor etching step, and to provide a high etching...
6706639 Method for interconnecting magnetoresistive memory bits  
A process forms electrical interconnects between memory bits in a magnetoresistive memory device. An initial dielectric layer is formed to overlie a semiconductor substrate. A magnetoresistive...
6704691 Method and system for in-line monitoring process performance using measurable equipment signals  
A method and system for in-line monitoring process performance during wafer fabrication. First signals generated by a fabrication tool are collected and filtered to exclude abnormal signals while a...
6703316 Method and system for processing substrate  
A method and system for processing a substrate includes performing a wet process by supplying a working liquid to a substrate in a wet processing apparatus, transferring the substrate in a non-dry...
6703301 Method of preventing tungsten plugs from corrosion  
Tungsten plugs are prevented from corrosion, during fabrication of semiconductor devices, where the tungsten plug is formed in a substrate and coupled with a wire formed on the substrate. The...
6703317 Method to neutralize charge imbalance following a wafer cleaning process  
A method of reducing an electrical charge imbalance on a wafer process surface including providing a semiconductor wafer having a process surface including an upper most first material layer;...
6699792 Polymer spacers for creating small geometry space and method of manufacture thereof  
In forming an opening or space in a substrate, a layer of photoresist is provided on the substrate, and the photoresist is patterned to provide photoresist bodies having respective adjacent...
6696366 Technique for etching a low capacitance dielectric layer  
Techniques for etching through a low capacitance dielectric layer in a plasma processing chamber are disclosed. The techniques uses an etch chemistry that includes N 2 , O 2 , and a hydrocarbon. By...
6693038 Method for forming electrical contacts through multi-level dielectric layers by high density plasma etching  
A method for forming within a dielectric layer upon a substrate within a microelectronics fabrication a series of contact via holes etched through the dielectric layer to multi-level contact layers...
6689698 Method for etching a silicided poly using fluorine-based reactive ion etching and sodium hydroxide based solution immersion  
A method for removing a silicide poly on an integrated circuit (IC) chip. Specifically, one embodiment of the present invention discloses a method for exposing a gate oxide layer with a fluorine...
6689697 Method of forming uniformly planarized structure in a semiconductor wafer  
A method for forming a uniformly planarized structured in a semiconductor wafer forms metal structures on a substrate layer with spaces between the structures. The top surfaces of the metal...
6689699 Method for manufacturing a semiconductor device using recirculation of a process gas  
There is disclosed a semiconductor processing apparatus comprising a process chamber treating a substrate, a process gas feeder feeding a process gas to the process chamber, a first vacuum pump...
6686291 Undercut process with isotropic plasma etching at package level  
A method ( 30 ) of fabricating a micromechanical device ( 10 ) by performing spacer layer undercutting ( 46 ) and passivation at the package level. A back-end assembly process utilizes a full-cut...
6686292 Plasma etch method for forming uniform linewidth residue free patterned composite silicon containing dielectric layer/silicon stack layer  
A method for forming a patterned composite stack layer within a microelectronics fabrication. There is first provided a substrate. There is then formed over the substrate a blanket silicon layer....
6686287 Semiconductor device manufacturing method and apparatus  
In patterning a silicon-containing thin film formed over an insulating substrate by means of vapor-phase chemical etching using a resist pattern formed on the thin film as a mask, a luminescence...
6682659 Method for forming corrosion inhibited conductor layer  
A method for passivating a target layer. There is first provided a substrate. There is then formed over the substrate a target layer, where the target layer is susceptible to corrosion incident to...
6680257 Alternative related to SAS in flash EEPROM  
A method of eliminating contamination of tunnel oxide in stacked gates due to SAS photoresist process and preventing of n+ implantation caused by resist residue from the SAS photoresist process in...
6680255 Plasma etching methods  
A plasma etching method includes forming polymer material over at least some internal surfaces of a plasma etch chamber and forming polymer material over at least some surfaces of a semiconductor...
6670277 Method of manufacturing semiconductor device  
A semiconductor device manufacturing method for manufacturing a semiconductor device of constant finished dimensions as designed even when a material which is difficult to increase etch selectivity...
6670276 Plasma processing method  
A wafer W is placed on a lower electrode 106 provided inside a processing chamber 102 of a plasma processing apparatus 100 . A film constituted an organic polysiloxane, which is a Low-K...
6670278 Method of plasma etching of silicon carbide  
The invention provides a process for plasma etching silicon carbide with selectivity to an overlapping and/or underlying dielectric layer of material. The etching gas includes a hydrogen-containing...
6666986 Supercritical etching compositions and method of using same  
A supercritical etching composition and method for etching an inorganic material of a semiconductor-based substrate are provided. The method includes providing a semiconductor-based substrate...
6667242 Brim and gas escape for non-contact wafer holder  
The present invention comprises a brim surrounding a wafer or wafer-like object during plasma etching in a non-contact wafer holder, such brim facilitating uniform flow of the plasma discharge...
6667243 Etch damage repair with thermal annealing  
A method of manufacturing a semiconductor device etches a feature on a substrate in accordance with a photoresist mask. The photoresist mask is removed by plasma etching. Laser thermal annealing is...
6666982 Protection of dielectric window in inductively coupled plasma generation  
To protect a dielectric window in an inductively coupled plasma reactor from depositions of coating or etched material from the plasma, a dielectric insert is placed inside of the chamber closely...
6660646 Method for plasma hardening photoresist in etching of semiconductor and superconductor films  
A plasma photoresist hardening technique is provided to improve the etch resistance of a photoresist mask 26 . The technique involves the formation of a thin passivation layer 26 b on the...
6660546 Method of etching an object, method of repairing pattern, nitride pattern and semiconductor device  
A method of manufacturing a compound layer, containing a nitrified metal as a mayor component thereof and having a predetermined microstructure pattern, includes: an ion implantation step for...
6660654 Fabrication method and apparatus for fabricating a spatial structure in a semiconductor substrate  
In a fabrication method for making spatially etched structures, in particular trench structures for semiconductor memory cells, in a semiconductor substrate made of a semiconductor material, a...
6660645 Process for etching an organic dielectric using a silyated photoresist mask  
A process for forming a semiconductor device may comprise forming an organic dielectric layer on a substrate, forming a protective layer on the organic dielectric layer, forming a photoresist mask...
6660643 Etching of semiconductor wafer edges  
A novel method of etching a plurality of semiconductor wafers is provided which comprises assembling said plurality of wafers in a stack, and subjecting said stack of wafers to dry etching using a...
6656846 Apparatus for processing samples  
Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for...
6656832 Plasma treatment method for fabricating microelectronic fabrication having formed therein conductor layer with enhanced electrical properties  
A method for fabricating a microelectronic fabrication provides for forming a patterned conductor layer into a via defined by a pair of dielectric layers. Within the method, the via is plasma...
6656894 Method for cleaning etcher parts  
The invention relates to a method useful in removing etch residue from etcher equipment parts. The compositions used are aqueous, acidic compositions containing flouride and polar, organic...
6656848 Plasma chamber conditioning  
A method for determining the optimum number of conditioning wafers to be run following a wet clean of the walls of an RF plasma chamber 1 is based on an electrical precursor signal. Polymer build...
6656780 Method of manufacturing a semiconductor device having nitrogen ions by twice RTA processes  
In the fabrication of a MOS transistor, a single process step is performed for controlling the threshold voltage of the transistor and improving the reliability of a gate insulating film so that...
6652762 Method for fabricating nano-sized diamond whisker, and nano-sized diamond whisker fabricated thereby  
A method for fabricating a nano-sized diamond whisker includes the steps of depositing a diamond film on a substrate, forming a nano-sized mask pattern on the deposited diamond film, and etching...
6649075 Method and apparatus for measuring etch uniformity of a semiconductor wafer  
A method and apparatus for performing in situ measurement of etch uniformity within a semiconductor wafer processing system. Specifically, the apparatus and concomitant method analyzes optical...
6649530 Plasma etching at reduced pressure  
To provide a plasma etching method that can suppress discharge of active gases that do not contribute to plasma etching into the atmosphere, a plasma etching apparatus 10 is composed of a vacuum...
6649076 Method for performing plasma process on particles  
The disclosed is a method and apparatus capable of certainly performing a plasma process such as isotropic plasma etching on the whole surface of a particle. A particle ( 2 ) is passed through a...
6647994 Method of resist stripping over low-k dielectric material  
An improved and new process for photoresist stripping for use during fabrication of semiconductor integrated circuits, which use porous low-k dielectric materials, such as OSG or HSQ, as the...
6649082 Harm-removing agent and method for rendering halogen-containing gas harmless and uses thereof  
The present invention intends to provide an agent and a method for removing harmful gas, which exhibits high harm-removing ability per unit volume for harmful halogen-containing gas contained in...
6645870 Process for fabricating semiconductor device  
Disclosed is a process for fabricating a semiconductor device, which efficiently suppresses a damage layer formed on a base silicon substrate or an interconnection layer and removes a high...
6641746 Control of semiconductor processing  
An integrated metrology and lithography/etch system and method ( 10 ) for micro-electronics device manufacturing. A process control neural network ( 30 ) is used to develop an estimated process...
6642153 Method for avoiding unetched polymer residue in anisotropically etched semiconductor features  
A method for plasma treating an anisotropically etched semiconductor feature with improved removal of residual polymeric material including providing a semiconductor wafer having an anisotropically...
6635579 Operating method of a semiconductor etcher  
An operating method of a semiconductor etcher includes three steps. The first step is to provide a first power for shortening a warm-up time of the etcher. The second step is to provide a second...
6635580 Apparatus and method for controlling wafer temperature in a plasma etcher  
An apparatus for controlling wafer temperature in a plasma etcher during a plasma-on state and a method for using such apparatus are disclosed. In the apparatus, an additional temperature sensor...
6630405 Method of gate patterning for sub-0.1 &mgr m technology  
A method of gate patterning, including the following steps. A semiconductor structure having an upper silicon layer is provided. The semiconductor structure has a gate conductor region. A first...