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6713376 |
Method of manufacturing a contract element and a multi-layered wiring substrate, and wafer batch contact board
In a method of manufacturing a contact element, provision is made of a laminated body which has an insulating film, an electrically conductive layer stacked on the insulating film, and bump holes...
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6712983 |
Method of etching a deep trench in a substrate and method of fabricating on-chip devices and micro-machined structures using the same
A method of etching a trench in a substrate using a dry plasma etch technique that allows precise control of lateral undercut. The method includes optionally forming at least one on-chip device or...
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6709610 |
Isotropic dry cleaning process for noble metal integrated circuit structures
A method for removing from a microelectronic device structure a noble metal residue including at least one metal selected from the group consisting of platinum, palladium, iridium and rhodium, by...
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6706638 |
Method of forming opening in dielectric layer
A method of forming openings in the dielectric layer. The method includes an ion implantation step to reduce a lateral etching in a chemical vapor etching step, and to provide a high etching...
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6706639 |
Method for interconnecting magnetoresistive memory bits
A process forms electrical interconnects between memory bits in a magnetoresistive memory device. An initial dielectric layer is formed to overlie a semiconductor substrate. A magnetoresistive...
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6704691 |
Method and system for in-line monitoring process performance using measurable equipment signals
A method and system for in-line monitoring process performance during wafer fabrication. First signals generated by a fabrication tool are collected and filtered to exclude abnormal signals while a...
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6703316 |
Method and system for processing substrate
A method and system for processing a substrate includes performing a wet process by supplying a working liquid to a substrate in a wet processing apparatus, transferring the substrate in a non-dry...
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6703301 |
Method of preventing tungsten plugs from corrosion
Tungsten plugs are prevented from corrosion, during fabrication of semiconductor devices, where the tungsten plug is formed in a substrate and coupled with a wire formed on the substrate. The...
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6703317 |
Method to neutralize charge imbalance following a wafer cleaning process
A method of reducing an electrical charge imbalance on a wafer process surface including providing a semiconductor wafer having a process surface including an upper most first material layer;...
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6699792 |
Polymer spacers for creating small geometry space and method of manufacture thereof
In forming an opening or space in a substrate, a layer of photoresist is provided on the substrate, and the photoresist is patterned to provide photoresist bodies having respective adjacent...
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6696366 |
Technique for etching a low capacitance dielectric layer
Techniques for etching through a low capacitance dielectric layer in a plasma processing chamber are disclosed. The techniques uses an etch chemistry that includes N 2 , O 2 , and a hydrocarbon. By...
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6693038 |
Method for forming electrical contacts through multi-level dielectric layers by high density plasma etching
A method for forming within a dielectric layer upon a substrate within a microelectronics fabrication a series of contact via holes etched through the dielectric layer to multi-level contact layers...
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6689698 |
Method for etching a silicided poly using fluorine-based reactive ion etching and sodium hydroxide based solution immersion
A method for removing a silicide poly on an integrated circuit (IC) chip. Specifically, one embodiment of the present invention discloses a method for exposing a gate oxide layer with a fluorine...
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6689697 |
Method of forming uniformly planarized structure in a semiconductor wafer
A method for forming a uniformly planarized structured in a semiconductor wafer forms metal structures on a substrate layer with spaces between the structures. The top surfaces of the metal...
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6689699 |
Method for manufacturing a semiconductor device using recirculation of a process gas
There is disclosed a semiconductor processing apparatus comprising a process chamber treating a substrate, a process gas feeder feeding a process gas to the process chamber, a first vacuum pump...
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6686291 |
Undercut process with isotropic plasma etching at package level
A method ( 30 ) of fabricating a micromechanical device ( 10 ) by performing spacer layer undercutting ( 46 ) and passivation at the package level. A back-end assembly process utilizes a full-cut...
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6686292 |
Plasma etch method for forming uniform linewidth residue free patterned composite silicon containing dielectric layer/silicon stack layer
A method for forming a patterned composite stack layer within a microelectronics fabrication. There is first provided a substrate. There is then formed over the substrate a blanket silicon layer....
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6686287 |
Semiconductor device manufacturing method and apparatus
In patterning a silicon-containing thin film formed over an insulating substrate by means of vapor-phase chemical etching using a resist pattern formed on the thin film as a mask, a luminescence...
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6682659 |
Method for forming corrosion inhibited conductor layer
A method for passivating a target layer. There is first provided a substrate. There is then formed over the substrate a target layer, where the target layer is susceptible to corrosion incident to...
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6680257 |
Alternative related to SAS in flash EEPROM
A method of eliminating contamination of tunnel oxide in stacked gates due to SAS photoresist process and preventing of n+ implantation caused by resist residue from the SAS photoresist process in...
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6680255 |
Plasma etching methods
A plasma etching method includes forming polymer material over at least some internal surfaces of a plasma etch chamber and forming polymer material over at least some surfaces of a semiconductor...
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6670277 |
Method of manufacturing semiconductor device
A semiconductor device manufacturing method for manufacturing a semiconductor device of constant finished dimensions as designed even when a material which is difficult to increase etch selectivity...
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6670276 |
Plasma processing method
A wafer W is placed on a lower electrode 106 provided inside a processing chamber 102 of a plasma processing apparatus 100 . A film constituted an organic polysiloxane, which is a Low-K...
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6670278 |
Method of plasma etching of silicon carbide
The invention provides a process for plasma etching silicon carbide with selectivity to an overlapping and/or underlying dielectric layer of material. The etching gas includes a hydrogen-containing...
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6666986 |
Supercritical etching compositions and method of using same
A supercritical etching composition and method for etching an inorganic material of a semiconductor-based substrate are provided. The method includes providing a semiconductor-based substrate...
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6667242 |
Brim and gas escape for non-contact wafer holder
The present invention comprises a brim surrounding a wafer or wafer-like object during plasma etching in a non-contact wafer holder, such brim facilitating uniform flow of the plasma discharge...
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6667243 |
Etch damage repair with thermal annealing
A method of manufacturing a semiconductor device etches a feature on a substrate in accordance with a photoresist mask. The photoresist mask is removed by plasma etching. Laser thermal annealing is...
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6666982 |
Protection of dielectric window in inductively coupled plasma generation
To protect a dielectric window in an inductively coupled plasma reactor from depositions of coating or etched material from the plasma, a dielectric insert is placed inside of the chamber closely...
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6660646 |
Method for plasma hardening photoresist in etching of semiconductor and superconductor films
A plasma photoresist hardening technique is provided to improve the etch resistance of a photoresist mask 26 . The technique involves the formation of a thin passivation layer 26 b on the...
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6660546 |
Method of etching an object, method of repairing pattern, nitride pattern and semiconductor device
A method of manufacturing a compound layer, containing a nitrified metal as a mayor component thereof and having a predetermined microstructure pattern, includes: an ion implantation step for...
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6660654 |
Fabrication method and apparatus for fabricating a spatial structure in a semiconductor substrate
In a fabrication method for making spatially etched structures, in particular trench structures for semiconductor memory cells, in a semiconductor substrate made of a semiconductor material, a...
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6660645 |
Process for etching an organic dielectric using a silyated photoresist mask
A process for forming a semiconductor device may comprise forming an organic dielectric layer on a substrate, forming a protective layer on the organic dielectric layer, forming a photoresist mask...
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6660643 |
Etching of semiconductor wafer edges
A novel method of etching a plurality of semiconductor wafers is provided which comprises assembling said plurality of wafers in a stack, and subjecting said stack of wafers to dry etching using a...
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6656846 |
Apparatus for processing samples
Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for...
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6656832 |
Plasma treatment method for fabricating microelectronic fabrication having formed therein conductor layer with enhanced electrical properties
A method for fabricating a microelectronic fabrication provides for forming a patterned conductor layer into a via defined by a pair of dielectric layers. Within the method, the via is plasma...
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6656894 |
Method for cleaning etcher parts
The invention relates to a method useful in removing etch residue from etcher equipment parts. The compositions used are aqueous, acidic compositions containing flouride and polar, organic...
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6656848 |
Plasma chamber conditioning
A method for determining the optimum number of conditioning wafers to be run following a wet clean of the walls of an RF plasma chamber 1 is based on an electrical precursor signal. Polymer build...
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6656780 |
Method of manufacturing a semiconductor device having nitrogen ions by twice RTA processes
In the fabrication of a MOS transistor, a single process step is performed for controlling the threshold voltage of the transistor and improving the reliability of a gate insulating film so that...
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6652762 |
Method for fabricating nano-sized diamond whisker, and nano-sized diamond whisker fabricated thereby
A method for fabricating a nano-sized diamond whisker includes the steps of depositing a diamond film on a substrate, forming a nano-sized mask pattern on the deposited diamond film, and etching...
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6649075 |
Method and apparatus for measuring etch uniformity of a semiconductor wafer
A method and apparatus for performing in situ measurement of etch uniformity within a semiconductor wafer processing system. Specifically, the apparatus and concomitant method analyzes optical...
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6649530 |
Plasma etching at reduced pressure
To provide a plasma etching method that can suppress discharge of active gases that do not contribute to plasma etching into the atmosphere, a plasma etching apparatus 10 is composed of a vacuum...
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6649076 |
Method for performing plasma process on particles
The disclosed is a method and apparatus capable of certainly performing a plasma process such as isotropic plasma etching on the whole surface of a particle. A particle ( 2 ) is passed through a...
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6647994 |
Method of resist stripping over low-k dielectric material
An improved and new process for photoresist stripping for use during fabrication of semiconductor integrated circuits, which use porous low-k dielectric materials, such as OSG or HSQ, as the...
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6649082 |
Harm-removing agent and method for rendering halogen-containing gas harmless and uses thereof
The present invention intends to provide an agent and a method for removing harmful gas, which exhibits high harm-removing ability per unit volume for harmful halogen-containing gas contained in...
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6645870 |
Process for fabricating semiconductor device
Disclosed is a process for fabricating a semiconductor device, which efficiently suppresses a damage layer formed on a base silicon substrate or an interconnection layer and removes a high...
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6641746 |
Control of semiconductor processing
An integrated metrology and lithography/etch system and method ( 10 ) for micro-electronics device manufacturing. A process control neural network ( 30 ) is used to develop an estimated process...
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6642153 |
Method for avoiding unetched polymer residue in anisotropically etched semiconductor features
A method for plasma treating an anisotropically etched semiconductor feature with improved removal of residual polymeric material including providing a semiconductor wafer having an anisotropically...
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6635579 |
Operating method of a semiconductor etcher
An operating method of a semiconductor etcher includes three steps. The first step is to provide a first power for shortening a warm-up time of the etcher. The second step is to provide a second...
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6635580 |
Apparatus and method for controlling wafer temperature in a plasma etcher
An apparatus for controlling wafer temperature in a plasma etcher during a plasma-on state and a method for using such apparatus are disclosed. In the apparatus, an additional temperature sensor...
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6630405 |
Method of gate patterning for sub-0.1 &mgr m technology
A method of gate patterning, including the following steps. A semiconductor structure having an upper silicon layer is provided. The semiconductor structure has a gate conductor region. A first...
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