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9040426 Method for manufacturing semiconductor device  
A method for manufacturing a semiconductor device includes: forming a first active region, a second active region, an inactive region located between the first active region and the second active...
9040424 Methods of forming single crystal silicon structures and semiconductor device structures including single crystal silicon structures  
A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The single crystal silicon substrate is exposed to an anisotropic...
9034769 Methods of selectively removing a substrate material  
A method for selective removing material from a substrate without damage to copper filling a via and extending at least partially through the substrate. The method comprises oxidizing a...
9034770 Differential silicon oxide etch  
A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch created from a remote plasma etch. The remote plasma excites a...
9034768 Depositing tungsten into high aspect ratio features  
Methods and apparatuses for filling high aspect ratio features with tungsten-containing materials are provided. The method involves providing a partially fabricated semiconductor substrate and...
9034698 Semiconductor device manufacturing method  
A semiconductor device manufacturing method includes exciting a processing gas containing a HBr gas and a Cl2 gas within a processing chamber that accommodates a target object including a...
9029264 Methods for depositing a tin-containing layer on a substrate  
Methods of depositing a tin-containing layer on a substrate are disclosed herein. In some embodiments, a method of depositing a tin-containing layer on a substrate may include flowing a tin source...
9023227 Increased deposition efficiency and higher chamber conductance with source power increase in an inductively coupled plasma (ICP) chamber  
Embodiments described herein generally relate to a substrate processing system and related methods, such as an etching/deposition method. The method comprises (A) depositing a protective layer on...
9023732 Processing systems and methods for halide scavenging  
Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations...
9017564 Plasma etching method  
A plasma etching method performs plasma etching on a sample, which has laminated films containing a variable layer of a magnetic film, a barrier layer of an insulating material, and a fixed layer...
9017561 Piezo-resistive MEMS resonator  
A piezo-resistive MEMS resonator comprising an anchor, a resonator mounted on the anchor, an actuator mounted to apply an electrostatic force on the resonator and a piezo-resistive read-out means...
9018065 Horizontal epitaxy furnace for channel SiGe formation  
A method and apparatus are provided for recessing a channel region of the PFET and epitaxially growing channel SiGe in the recessed region inside of a horizontally oriented processing furnace....
9018736 Semiconductor device and method of manufacturing semiconductor device  
A semiconductor device includes a substrate having a hexagonal crystalline structure and a (0001) surface, and conductive films on the surface of the substrate. The conductive films include a...
9012331 Etching method and non-transitory storage medium  
Provided is a method of selectively etching a portion of silicon existing on a surface of a substrate to be processed, which includes: loading the substrate to be processed into a chamber; and...
9006844 Process and structure for high temperature selective fusion bonding  
A method to prevent movable structures within a MEMS device, and more specifically, in recesses having one or more dimension in the micrometer range or smaller (i.e., smaller than about 10...
8999856 Methods for etch of sin films  
A method of selectively etching silicon nitride from a substrate comprising a silicon nitride layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation...
8999851 Methods for formation of substrate elements  
The present invention relates to methods of forming substrate elements, including semiconductor elements such as nanowires, transistors and other structures, as well as the elements formed by such...
9000494 Micromechanical device and methods to fabricate same using hard mask resistant to structure release etch  
A structure includes a silicon layer disposed on a buried oxide layer that is disposed on a substrate; at least one transistor device formed on or in the silicon layer, the at least one transistor...
8993352 Plasma processing method and plasma processing apparatus  
A plasma processing method is used to etch a multilayered material having a stacked structure, in which a first magnetic layer, an insulating layer, a second magnetic layer, and a mask material...
8993445 Selective removal of gate structure sidewall(s) to facilitate sidewall spacer protection  
Methods are provided for facilitating fabricating a semiconductor device by selectively etching a gate structure sidewall(s) to facilitate subsequent sidewall spacer isolation. The method...
8987143 Hydrogen plasma cleaning of germanium oxide surfaces  
Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A...
8987743 Thin film transistor array substrate and method for manufacturing the same  
The present disclosure discloses a method for manufacturing a TFT array substrate, comprising: depositing a gate metal layer, a gate insulating layer, a semiconductor layer and a source-drain...
8986556 Heat assisted narrow pole design with trailing shield  
A TAMR (Thermally Assisted Magnetic Recording) write head is formed with a narrow pole tip, a trailing edge magnetic shield and, optionally, a plasmon shield. The narrow pole tipped write head...
8987144 High-K metal gate electrode structures formed by cap layer removal without sacrificial spacer  
In sophisticated semiconductor devices, high-k metal gate electrode structures may be formed in an early manufacturing stage with superior integrity of sensitive gate materials by providing an...
8980111 Sidewall image transfer method for low aspect ratio patterns  
A method for patterning a substrate is described. The patterning method may include conformally depositing a material layer over a pattern according to a conformal deposition process, selectively...
8980758 Methods for etching an etching stop layer utilizing a cyclical etching process  
Methods for etching an etching stop layer disposed on the substrate using a cyclical etching process are provided. In one embodiment, a method for etching an etching stop layer includes performing...
8980761 Directional SIO2 etch using low-temperature etchant deposition and plasma post-treatment  
Methods for processing a substrate are described herein. Methods can include positioning a substrate comprising silicon in a processing chamber, delivering a plasma to the surface of the substrate...
8974679 Method for manufacturing an opto-electronic component  
A method of producing an optoelectronic component comprises the steps of: A) providing a radiation-emitting layer sequence (1) having an active zone (13), which emits electromagnetic primary...
8975191 Plasma etching method  
There is provided a plasma etching method including a first process of etching an intermediate layer, which contains silicon and nitrogen and is positioned below a resist mask formed on a surface...
8974684 Synchronous embedded radio frequency pulsing for plasma etching  
Methods for etching a substrate are provided herein. In some embodiments, a method of etching a substrate may include generating a plasma by providing only a first RF signal having a first...
8975192 Method for manufacturing semiconductor device  
A method is provided for manufacturing a semiconductor device having a heat-resistant resin film with flip-chip connection structure using a solder bump or a gold bump and an epoxy resin compound...
8975186 Double patterning methods and structures  
Various embodiments provide double patterning methods and structures. In an exemplary method, a to-be-etched layer can be provided. A stress layer can be formed on the to-be-etched layer. The...
8968588 Low electron temperature microwave surface-wave plasma (SWP) processing method and apparatus  
A surface wave plasma (SWP) source couples pulsed microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). To...
8969209 Method for removing oxide  
A method for removing oxide is described. A substrate is provided, including an exposed portion whereon a native oxide layer has been formed. A removing oxide process is performed to the substrate...
8968582 Device for electrical characterization of molecules using CNT-nanoparticle-molecule-nanoparticle-CNT structure  
A method of forming an electrode is disclosed. A carbon nanotube is deposited on a substrate. A section of the carbon nanotube is removed to form at least one exposed end defining a first gap. A...
8969907 Flip-chip light emitting diode  
A flip-chip light emitting diode comprises a transparent base-plate, at least a first electrical semi-conductive layer, a light emitting layer, a second electrical semi-conductive layer, at least...
8956882 Method of manufacturing magnetoresistive element  
According to one embodiment, a method of manufacturing a magnetoresistive element, the method includes forming a first non-magnetic layer on a first magnetic layer, forming a second magnetic layer...
8951818 Method for preparing switch transistor and equipment for etching the same  
The present invention discloses a method for preparing switch transistor comprising: sequentially forming a control electrode, an insulation layer, an active layer, and a source/drain metal layer...
8946089 Methods of forming contact holes  
Methods of forming contact holes include forming a first guide pattern over an etching target layer. The first guide pattern has first openings each extending in a first direction and each first...
8946090 Method for etching a layer on a silicon semiconductor substrate  
A method for selective etching of an SiGe mixed semiconductor layer on a silicon semiconductor substrate by dry chemical etching of the SiGe mixed semiconductor layer with the aid of an etching...
8945820 Silicon-containing resist underlayer film-forming composition and patterning process  
The present invention is a silicon-containing resist underlayer film-forming composition containing a condensation product and/or a hydrolysis condensation product of a mixture comprising: one or...
8941211 Integrated circuit using deep trench through silicon (DTS)  
An embodiment radio frequency area of an integrated circuit is disclosed. The radio frequency area includes a substrate having an implant region. The substrate has a first resistance. A buried...
8937019 Techniques for generating three dimensional structures  
Techniques for forming a three dimensional (3D) feature on a substrate are disclosed. In one exemplary embodiment, the technique may be realized as a method comprising: forming a resist structure...
8932959 Method and system for etching plural layers on a workpiece including a lower layer containing an advanced memory material  
Etching of a thin film stack including a lower thin film layer containing an advanced memory material is carried out in an inductively coupled plasma reactor having a dielectric RF window without...
8932956 Far back end of the line stack encapsulation  
A method for far back end of the line (FBEOL) protection of a semiconductor device includes forming a patterned layer over a back end of the line (BEOL) stack, depositing a first conformal...
8932406 In-situ generation of the molecular etcher carbonyl fluoride or any of its variants and its use  
The molecular etcher carbonyl fluoride (COF2) or any of its variants, are provided for, according to the present invention, to increase the efficiency of etching and/or cleaning and/or removal of...
8927990 Semiconductor device and manufacturing method thereof  
Hydrogen concentration and oxygen vacancies in an oxide semiconductor film are reduced. Reliability of a semiconductor device which includes a transistor using an oxide semiconductor film is...
8927431 High-rate chemical vapor etch of silicon substrates  
Methods of etching a silicon substrate at a high rate using a chemical vapor etching process are provided. A silicon substrate may be etched by heating the silicon substrate in a process chamber...
8927435 Load lock having secondary isolation chamber  
A load lock includes a chamber including an upper portion, a lower portion, and a partition between the upper portion and the lower portion, the partition including an opening therethrough. The...
8921232 Taper-etching method and method of manufacturing near-field light generator  
A method of taper-etching a layer to be etched that is made of a dielectric material and has a top surface. The method includes the steps of: forming an etching mask with an opening on the top...