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7622392 |
Method of processing substrate, method of manufacturing solid-state imaging device, method of manufacturing thin film device, and programs for implementing the methods
A method of processing a substrate that enables the amount removed of an insulating film to be controlled precisely, without damaging an electronic device. An insulating film on a substrate of a...
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7622051 |
Methods for critical dimension control during plasma etching
A method of etching a substrate in a plasma processing chamber is disclosed. The method includes introducing the substrate having thereon an underlying layer, an anti-reflective layer above the...
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7615163 |
Film formation apparatus and method of using the same
A method of using a film formation apparatus for a semiconductor process includes processing by a cleaning gas a by-product film deposited on an inner surface of a reaction chamber of the film...
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7611993 |
Plasma processing method and plasma processing apparatus
A plasma processing method for processing a sample by applying a high-frequency bias power periodically for each one period (T) which is divided along a time axis into a first sub-period (T 1 ) for...
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7608545 |
Semiconductor device
Embodiments relate to a semiconductor device and a method of manufacturing a semiconductor. In embodiments, the method may include a first exposure step of performing an exposure process for...
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7608539 |
ALD method and apparatus
A method and an apparatus for executing efficient and cost-effective Atomic Layer Deposition (ALD) at low temperatures are presented. ALD films such as oxides and nitrides are produced at low...
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7605089 |
Method of manufacturing an electronic device
A method of manufacturing an electronic device is provided wherein an interconnect is made using 193 nm lithography. No deformation of the desired linewidth takes place in that during a plasma gas...
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7605088 |
Method of uniformly etching refractory metals, refractory metal alloys and refractory metal silicides
This invention is directed to a process for etching a semiconductor device using an etchant composition to form a predetermined etched pattern therein. The semiconductor device typically has a...
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7605076 |
Method of manufacturing a semiconductor device from which damage layers and native oxide films in connection holes have been removed
An insulating film formed on a conducting layer is dry-etched so as to make a connection hole in the insulating film to expose the conducting layer. Plasma is supplied onto the exposed conducting...
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7601645 |
Methods for fabricating device features having small dimensions
Methods for fabricating devices having small feature sizes are provided. In an exemplary embodiment, a method comprises forming a patterned first mask layer overlying a subject material layer and...
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7601641 |
Two step optical planarizing layer etch
Methods are provided for etching during fabrication of a semiconductor device. The method includes initially etching to partially remove a portion of one or more lithographic-aiding layers...
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7598178 |
Carbon precursors for use during silicon epitaxial film formation
The present invention provides systems and methods of forming an epitaxial film on a substrate. After heating in a process chamber, the substrate is exposed to a silicon source and at least one of...
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7598177 |
Methods of filling trenches using high-density plasma deposition (HDP)
Methods of filling trenches/gaps defined by circuit elements on an integrated circuit substrate are provided. The methods include forming a first high-density plasma layer on an integrated circuit...
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7595206 |
Manufacturing method for semiconductor light emitting device
A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a...
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7595005 |
Method and apparatus for ashing a substrate using carbon dioxide
A method and apparatus for removing residue, such as etch reside, from a substrate with substantially reduced damage to the substrate in a plasma processing system is described. A plasma ashing...
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7592261 |
Method for suppressing charging of component in vacuum processing chamber of plasma processing system and plasma processing system
When the state of the vacuum processing chamber is switched to an idle state in which an insulating fluid is circulated while a semiconductor wafer W is not placed in the vacuum processing chamber...
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7585780 |
Method for manufacturing semiconductor device
A method for manufacturing a semiconductor device comprises: forming an interlayer insulating film including a storage node contact plug over a semiconductor substrate; forming an etching barrier...
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7585779 |
Fabrication method of semiconductor device
A fabrication method of a semiconductor device includes steps of performing any one of O 2 ashing, organic processing, and dry etching on a surface of a GaN-based semiconductor layer, etching the...
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7585778 |
Method of etching an organic low-k dielectric material
A method of etching organic low-k dielectric materials is provided herein. In one embodiment, a method of etching organic low-k dielectric materials includes placing a substrate comprising an...
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7585776 |
Dry etching method of insulating film
It is an object to provide a high-precision method for forming deep holes of elliptic pattern, which can improve hole directionality on the short diameter side, the hole directionality being...
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7585775 |
System and method for faceting a masking layer in a plasma etch to slope a feature edge
A method is disclosed for applying a plasma etch process to facet a masking layer in a semiconductor device by creating sloped surfaces in the masking layer. The masking layer is plasma etched with...
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7585774 |
Method for fabricating metal line of semiconductor device
The present invention is directed to a method for fabricating a metal line of a semiconductor device. The method comprises the steps of forming an insulation layer, a metal layer and an organic...
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7585685 |
Method of determining wafer voltage in a plasma reactor from applied bias voltage and current and a pair of constants
The voltage of a wafer on the pedestal of an RF plasma reactor is instantly determined from the applied bias current and the applied bias voltage sampled during plasma processing of the wafer using...
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7582567 |
Method for forming CMOS device with self-aligned contacts and region formed using salicide process
A method for forming CMOS devices on a semiconductor substrate is disclosed in which gate structures are formed within both the core region and the non-core region of the semiconductor substrate....
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7582532 |
Method for fabricating semiconductor device
A method for fabricating a semiconductor device includes etching a predetermined portion of a substrate to form a first recess having a bottom middle portion roundly projected and bottom edge...
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7578945 |
Method and apparatus for tuning a set of plasma processing steps
In a plasma processing system, a method of tuning of a set of plasma processing steps is disclosed. The method includes striking a first plasma comprising neutrals and ions in a plasma reactor of...
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7573116 |
Etch aided by electrically shorting upper and lower sidewall portions during the formation of a semiconductor device
A method used to fabricate a semiconductor device comprises etching a dielectric layer, resulting in an undesirable charge buildup along a sidewall formed in the dielectric layer during the etch....
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7572736 |
Method of dry-etching semiconductor devices
A system, method and product of dry-etching a semiconductor device are disclosed, the system having a material supply for forming a material layer on the semiconductor substrate, a pattern for...
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7572732 |
Method to modulate etch rate in SLAM
Several techniques are described for modulating the etch rate of a sacrificial light absorbing material (SLAM) by altering its composition so that it matches the etch rate of a surrounding...
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7566664 |
Selective etching of MEMS using gaseous halides and reactive co-etchants
A method for etching a target material in the presence of a structural material with improved selectivity uses a vapor phase etchant and a co-etchant. Embodiments of the method exhibit improved...
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7566596 |
Method of manufacturing a thin film transistor substrate and stripping composition
A method of manufacturing a thin film transistor substrate includes forming a transistor thin layer pattern, forming a protecting layer, forming a photoresist film, forming a pixel electrode and a...
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7566574 |
Method of performing a double-sided process
A method of performing a double-sided process is provided. First, a wafer having a structural pattern disposed on the front surface is provided. Following that, a plurality of front scribe lines...
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7563723 |
Critical dimension control for integrated circuits
Methods of etching substrates with small critical dimensions and altering the critical dimensions are disclosed. In one embodiment, a sulfur oxide based plasma is used to etch an amorphous carbon...
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7563721 |
Method for fabricating semiconductor device capable of decreasing critical dimension in peripheral region
A method for fabricating a semiconductor device where a critical dimension in a peripheral region is decreased. The method includes the steps of: forming a silicon nitride layer on a substrate...
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7563382 |
Mask and method of fabricating the same, and method of machining material
A method of fabricating a mask which can endure use for a long time and can be used for forming an isolated pattern with a high aspect ratio. The method includes the steps of: forming a soft...
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7563379 |
Dry etching method and photonic crystal device fabricated by use of the same
In a dry etching method in which clusters formed by agglomeration of atoms or molecules are ionized and accelerated as a cluster ion beam for irradiation of an object surface to etch away therefrom...
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7560391 |
Forming of trenches or wells having different destinations in a semiconductor substrate
A method for forming, in a semiconductor substrate, wells and/or trenches having different destinations, including the steps of at least partly simultaneously etching cavities according to the...
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7560389 |
Method for fabricating semiconductor element
A method for fabricating a semiconductor element on a semiconductor substrate having a support substrate and a semiconductor layer above the support substrate. The method includes preparing the...
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7560386 |
Method of manufacturing nonvolatile semiconductor memory device
A method of manufacturing a nonvolatile semiconductor memory device may include forming a pad oxide layer pattern and a mask pattern on a semiconductor substrate, forming a trench within the...
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7553769 |
Method for treating a dielectric film
A method and system for treating a dielectric film includes exposing at least one surface of the dielectric film to a C x H y containing material, wherein x and y are each integers greater than or...
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7553679 |
Method of determining plasma ion density, wafer voltage, etch rate and wafer current from applied bias voltage and current
Plasma parameters such as plasma ion density, wafer voltage, etch rate and wafer current in the chamber are determined from external measurements on the applied RF bias electrical parameters such...
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7547627 |
Method for manufacturing semiconductor device
It is an object of the present invention to provide a semiconductor device including a wiring having a preferable shape. A manufacturing method includes the steps of forming a first conductive...
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7547621 |
LPCVD gate hard mask
A gate hard mask is deposited on a gate structure using low pressure chemical vapor deposition (LPCVD). By doing so, the wet etch removal ratio (WERR) of the gate hard mask relative to the...
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7544531 |
Ground strap for suppressing stiction during MEMS fabrication
To suppress stiction of a MEMS resonator during fabrication, conductive structures of the MEMS resonator are electrically coupled via a ground strap during the step of forming isolation trenches...
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7541289 |
Process for removing high stressed film using LF or HF bias power and capacitively coupled VHF source power with enhanced residue capture
A method of fabricating multilayer interconnect structures on a semiconductor wafer begins by roughening the interior surface of a metal lid to a surface roughness in excess of SA 2000 with a...
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7541270 |
Methods for forming openings in doped silicon dioxide
Methods of forming openings in doped silicon dioxide layers and of forming self aligned contact holes are provided. The openings are generally etched in a plasma processing chamber. An etchant gas...
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7540971 |
Plasma etch process using polymerizing etch gases across a wafer surface and additional polymer managing or controlling gases in independently fed gas zones with time and spatial modulation of gas content
A plasma etch process etches high aspect ratio openings in a dielectric film on a workpiece in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the...
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7538377 |
Semiconductor memory device
In a cell contact pad method, a consecutive dummy cell contact pad intersecting with a cell gate electrode is formed at an outer peripheral portion of the memory cell array. The dummy cell contact...
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7538038 |
Method of removing resist, semiconductor device thereby and method of manufacturing a semiconductor device
Disclosed is a method of removing resist preventing increase of dielectric constant of low permittivity insulating films and preventing remains of resist. Using a resist mask, a protection...
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7534727 |
Method for manufacturing semiconductor device
A predetermined pattern containing a plurality of gate patterns, in the process of formation thereof, is classified into fine gate patterns and the other patterns (S 102 ), and a hard mask film is...
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