Matches 1 - 50 out of 459 1 2 3 4 5 6 7 8 9 10 >
Match Document Document Title
7622191 Titania-based coating for capillary microextraction  
A method is presented describing in situ preparation of the titania-based sol-gel PDMS coating and its immobilization on the inner surface of a fused silica microextraction capillary. Sol-gel...
7615849 Semiconductor device and manufacturing method thereof  
In a semiconductor device having SiC vertical trench MOSFETs, it is aimed to prevent the generation of large scattering in the channel resistance without largely increasing the average value of...
7598169 Method to remove beol sacrificial materials and chemical residues by irradiation  
A method to fabricate interconnect structures that are part of integrated circuits and microelectronic devices by utilization of an irradiation to remove and clean a sacrificial material used...
7598177 Methods of filling trenches using high-density plasma deposition (HDP)  
Methods of filling trenches/gaps defined by circuit elements on an integrated circuit substrate are provided. The methods include forming a first high-density plasma layer on an integrated circuit...
7582532 Method for fabricating semiconductor device  
A method for fabricating a semiconductor device includes etching a predetermined portion of a substrate to form a first recess having a bottom middle portion roundly projected and bottom edge...
7575968 Inverse slope isolation and dual surface orientation integration  
A semiconductor process and apparatus provide a high performance CMOS devices ( 108, 109 ) with hybrid or dual substrates by etching a deposited oxide layer ( 62 ) using inverse slope isolation...
7575996 Semiconductor device and method for manufacturing the same  
Embodiments relate to a semiconductor device and a method for manufacturing the same. Embodiments may include forming a lower porous oxide layer on a semiconductor substrate having a conductive...
7572653 Method of fabricating light emitting diode  
Disclosed herein is a method of fabricating a light emitting diode. The method comprises preparing a substrate, forming a lower semiconductor layer, an active layer and an upper semiconductor layer...
7569485 Method for an integrated circuit contact  
A process is provided for forming vertical contacts in the manufacture of integrated circuits and devices. The process eliminates the need for precise mask alignment and allows the etch of the...
7531410 Semiconductor flash memory device and method of fabricating the same  
A semiconductor flash memory device. The flash memory device includes a floating gate electrode disposed in a recess having slanted sides in a semiconductor substrate. A gate insulation film is...
7517710 Method of manufacturing field emission device  
A method of manufacturing a field emission device (FED), which reduces the number of photomask patterning processes and improves the manufacturing yield of the FED, is provided. The method includes...
7485579 Method of manufacturing a semiconductor device  
In performing an anisotropic etching process after a taper etching process of a gate conductive layer of a two-layer or three-layer laminated structure, a portion that is not etched is left at an...
7462564 Processing system and method for treating a substrate  
A processing system and method for chemical oxide removal (COR), wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and second...
7439143 Flash memory device and method of manufacturing the same  
Disclosed is a flash memory device. The flash memory device includes a plurality of trench lines in an isolation region of a semiconductor device, a common source region along a word line (WL)...
7432605 Overlay mark, method for forming the same and application thereof  
An overlay mark for checking the alignment accuracy between a lower layer and a lithography process for defining an upper layer is described, including a part of the lower layer having two first...
7413995 Etched interposer for integrated circuit devices  
In one embodiment, a package-to-package stack is assembled comprising a first integrated circuit package, and a second integrated circuit package which are mechanically and electrically connected...
7410905 Method for fabricating thin film pattern, device and fabricating method therefor, method for fabricating liquid crystal display, liquid crystal display, method for fabricating active matrix substrate, electro-optical apparatus, and electrical apparatus  
A method for fabricating a thin film pattern on a substrate, includes the steps of: forming a concave part on the substrate that conforms to the thin film pattern; and applying a function liquid...
7405162 Etching method and computer-readable storage medium  
An etching method forms an opening with a substantially vertical profile extending to a stopper layer by performing an etching with a plasma of an etching gas acting on an object to be processed...
7393791 Etching method, method of fabricating metal film structure, and etching structure  
There is provided an etching method in which a protective film existing in an etching-destined region of a substrate structure is removed by means of ICP-RIE to form an exposure region of the...
7387955 Field effect transistor and method for manufacturing the same  
A field effect transistor having a T- or Γ-shaped fine gate electrode of which a head portion is wider than a foot portion, and a method for manufacturing the field effect transistor, are...
7381649 Structure for a multiple-gate FET device and a method for its fabrication  
A method for forming a semiconductor device and a device made using the method are provided. In one example, the method includes forming a hard mask layer on a semiconductor substrate and...
7365015 Damascene replacement metal gate process with controlled gate profile and length using Si1-xGex as sacrificial material  
A method of forming a metal gate in a wafer. PolySi 1-x Ge x and polysilicon are used to form a tapered groove. Gate oxide, PolySi 1-x Ge x , and polysilicon is deposited on a wafer. A resist...
7335593 Method of fabricating semiconductor device  
A gate metal is formed in a film, the foregoing gate metal is partially etched per each TFT having a different property, and a gate electrode is fabricated. Specifically, a resist mask is...
7320927 In situ hardmask pullback using an in situ plasma resist trim process  
The present invention provides a process of manufacturing an isolation structure for use in a semiconductor device. The process includes forming an opening in a substrate through a patterned...
7311850 Method of forming patterned thin film and method of fabricating micro device  
In a method of forming a patterned thin film, first, an etching stopper film and a film to be patterned are formed in this order on a base layer. Next, a patterned first film is formed on the film...
7303648 Via etch process  
Systems and techniques relating to etching vias in integrated circuit devices, in one implementation, include: providing a dielectric material and a conductive material, removing a first portion of...
7300882 Etching method and semiconductor device fabricating method  
An etching method for plasma-etching a low-k film, wherein the plasma etching is conducted under an etching gas atmosphere including a fluorocarbon gas, O 2 gas and Ar gas, and under the...
7297568 Three-dimensional structural body composed of silicon fine wire, its manufacturing method, and device using same  
A three-dimensional structure composed of highly-reliable silicon ultrafine wires, a method for producing the three-dimensional structure, and a device including the same are provided. The...
7282434 Method of manufacturing a semiconductor device  
A method of manufacturing a semiconductor integrated circuit device is provided including forming a first insulating film comprised of fluorine-containing silicon oxide over a main surface of a...
7259102 Etching technique to planarize a multi-layer structure  
The present invention is directed to a method of etching a multi-layer structure formed from a layer of a first material and a layer of a second material differing from the first material to obtain...
7255801 Deep submicron CMOS compatible suspending inductor  
A new method is provided for the creation of an inductor. Layers of pad oxide, a thick layer of dielectric and an etch stop layer are successively created over the surface of a substrate. The...
7241679 Method of manufacturing semiconductor device  
This invention provides an etching method for preventing deformation of an opening without extremely lowering productivity. This invention has a process for bonding a supporting board on a front...
7211517 Semiconductor device and method that includes reverse tapering multiple layers  
A method of manufacturing a semiconductor device of the present invention includes (a) sequentially forming a gate insulating film 14 , a first conductive layer 15 and a first insulating film ...
7199053 Method for detecting end-point of chemical mechanical polishing process  
Disclosed is a method for detecting an end-point of a CMP process of a semiconductor device. More specifically, when all polishing processes are performed using a nitride film as a polishing...
7195927 Process for making magnetic memory structures having different-sized memory cell layers  
An exemplary method for making a memory structure having different-sized memory cell layers comprises forming at least two layers of ferromagnetic materials, forming at least one mask layer above...
7186650 Control of bottom dimension of tapered contact via variation(s) of etch process  
Systems and methods are described for controlling critical dimension (CD) variation at the bottom of a tapered contact via on a semiconductor substrate. The invention monitors contact vias on a...
7172971 Semiconductor device having a contact window including a lower with a wider to provide a lower contact resistance  
Semiconductor devices having a contact window and fabrication methods thereof are provided. A lower dielectric layer, conductive patterns and an upper dielectric layer are formed sequentially on a...
7174072 Optical device having optical waveguide and method for manufacturing the same  
An optical device includes: a silicon substrate; a plurality of silicon oxide columns having a rectangular plan shape; and a cavity disposed between the columns. Each column has a lower portion...
7169711 Method of using carbon spacers for critical dimension (CD) reduction  
A method of using carbon spacers for critical dimension reduction can include providing a patterned photoresist layer above a substrate where the patterned photoresist layer has an aperture with a...
7125791 Advanced copper damascene structure  
A method of forming round bottom corners for conductive lines in an integrated circuit is presented. Two approaches are taken to achieve a preferred rounding profile. For both approaches, a trench...
7122476 Method for fabricating semiconductor device by forming trenches in different depths at a cellregion and a peripheral region for reducing self aligned source resistance at the cell region  
In order to reduce the SAS resistance at the cell region with low process cost, a method for fabricating a semiconductor device according to the present invention includes forming a protection...
7118933 Method for manufacturing optical bench, optical bench, optical module, silicon wafer substrate in which wiring and groove are formed, and wafer  
An optical bench on which an optical component is mounted comprises an Si substrate made of a silicon wafer, a groove disposed on the Si substrate and designed to mount the optical component...
7109120 Profiled standoff structure and method for optical display package  
A method for forming a standoff structure for devices, e.g., optical devices, integrated circuit devices, micro-electrical mechanical systems (i.e., MEMS). The method includes providing a substrate...
7098115 Semiconductor device and method of manufacturing the same  
Hexachlorodisilane (Si 2 Cl 6 ) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film...
7084065 Method for fabricating a semiconductor device  
A method for fabricating a semiconductor device that prevents the formation of a side etch caused by fluoride (CF x ) produced when a barrier insulating film is etched. As shown in FIG. 1 (G), an...
7078279 Manufacturing method of a thin film transistor array substrate  
A method of manufacturing a thin film transistor capable of simplifying a substrate structure and a manufacturing process is disclosed. The method of manufacturing a thin film transistor array...
7074725 Method for forming a storage node of a capacitor  
An improved method of manufacturing a capacitor on a semiconductor substrate is disclosed. A portion of an insulation film on a semiconductor substrate is etched to form a first opening in the...
7030444 Space process to prevent the reverse tunneling in split gate flash  
A split gate flash memory cell structure is disclosed for prevention of reverse tunneling. A gate insulator layer is formed over a semiconductor surface and a floating gate is disposed over the...
7022602 Nitrogen-enriched low-k barrier layer for a copper metallization layer  
The effect of resist poisoning may be eliminated or at least substantially reduced in the formation of a low-k metallization layer, in that a nitrogen-containing barrier layer is provided with a...
7019400 Semiconductor device having multilayer interconnection structure and method for manufacturing the device  
A semiconductor device having a multilayer interconnection structure includes a chip semiconductor substrate, a plurality of interlayer insulating layers disposed on the chip semiconductor...
Matches 1 - 50 out of 459 1 2 3 4 5 6 7 8 9 10 >