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7635898 |
Methods for fabricating semiconductor devices
Semiconductor devices and methods for fabricating a semiconductor devices are disclosed. A disclosed method comprises: forming a first gate electrode functioning as a flash memory; forming first...
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7628897 |
Reactive ion etching for semiconductor device feature topography modification
A film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a trench formed between adjacent raised surfaces. A first portion of the film is deposited over the...
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7608536 |
Method of manufacturing contact opening
Disclosed is a method of manufacturing a semiconductor device, in which a high-temperature SOD (spin on dielectric) annealing process is performed to prevent a SOD crack, and a nitride film,...
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7595250 |
Semiconductor device and method of manufacturing the same
There are provided the steps of forming an insulating film over a semiconductor substrate, forming sequentially a first conductive film, a dielectric film, a second conductive film on the...
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7589024 |
Process for producing semiconductor integrated circuit device
Recently, with shortened wavelengths employed in aligners, it is now difficult to use a material containing a benzene ring as a photoresist material. Since resist has extremely low plasma...
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7585773 |
Non-conformal stress liner for enhanced MOSFET performance
A semiconductor device is provided wherein at least one offset spacer is reduced and a non-conformal stress liner is thereafter deposited. By depositing the non-conformal stress liner in accordance...
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7585734 |
Method of fabricating multi-gate transistor and multi-gate transistor fabricated thereby
Provided are a method of fabricating an improved multi-gate transistor and a multi-gate transistor fabricated using the method, in which an active pattern is formed on a substrate, the active...
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7579280 |
Method of patterning a film
A method of patterning a thin film. The method includes forming a mask on a film to be patterned. The film is then etched in alignment with the mask to form a patterned film having a pair of...
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7572733 |
Gas switching during an etch process to modulate the characteristics of the etch
Gas switching is used during an etch process to modulate the characteristics of the etch. The etch process comprises a sequence of at least three steps, wherein the sequence is repeated at least...
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7557042 |
Method for making a semiconductor device with reduced spacing
Floating gates are formed in two separate polysilicon depositions steps resulting in distinct portions. The first formed portions are between isolation regions. A thick insulator is formed over the...
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7553769 |
Method for treating a dielectric film
A method and system for treating a dielectric film includes exposing at least one surface of the dielectric film to a C x H y containing material, wherein x and y are each integers greater than or...
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7544617 |
Die scale control of chemical mechanical polishing
A method for control of chemical mechanical polishing of a pattern dependant non-uniform wafer surfaces in a die scale wherein the die in the wafer surface have a plurality of zones of different...
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7541288 |
Methods of forming integrated circuit structures using insulator deposition and insulator gap filling techniques
Methods of forming integrated circuit devices include depositing an electrically insulating layer onto an integrated circuit substrate having integrated circuit structures thereon. This deposition...
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7541291 |
Reduction of feature critical dimensions
A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist...
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7521322 |
Vertical transistors
Vertical transistors for memory cells, such as 4F2 memory cells, are disclosed. The memory cells use digit line connections formed within the isolation trench to connect the digit line with the...
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7517806 |
Integrated circuit having pairs of parallel complementary FinFETs
A method and structure for an integrated circuit structure that utilizes complementary fin-type field effect transistors (FinFETs) is disclosed. The invention has a first-type of FinFET which...
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7510919 |
Anchoring, by lateral oxidizing, of patterns of a thin film to prevent the dewetting phenomenon
The invention relates to a thin film having a thickness of less than 10 nm, made of oxidizable semi-conductor material and patterned in the form of patterns. To prevent the dewetting phenomenon of...
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7510967 |
Method for manufacturing semiconductor device
The present invention relates to a method for manufacturing a semiconductor device, comprising: forming a metal interconnect on a substrate; forming a refractory metal layer containing titanium...
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7507669 |
Gap tuning for surface micromachined structures in an epitaxial reactor
A device includes a top layer having at least two opposing faces, and at least two epitaxially deposited layers, each of the at least two epitaxially deposited layers situated on a respective one...
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7507674 |
Memory device including resistance change layer as storage node and method(s) for making the same
A method for manufacturing a memory device including a resistance change layer as a storage node according to example embodiment(s) of the present invention and a memory device made by the...
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7504339 |
Method to form shallow trench isolation with rounded upper corner for advanced semiconductor circuits
A trench structure in a wafer of semiconductor material and the method of forming the trench structure are described. The trench structure is formed on a semiconductor wafer that has a top surface...
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7491647 |
Etch with striation control
A method for etching a feature in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the...
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7488687 |
Methods of forming electrical interconnect structures using polymer residues to increase etching selectivity through dielectric layers
Methods of forming electrical interconnect structures include forming a dielectric layer on a semiconductor substrate and forming a hard mask layer on the dielectric layer. A photoresist layer is...
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7485579 |
Method of manufacturing a semiconductor device
In performing an anisotropic etching process after a taper etching process of a gate conductive layer of a two-layer or three-layer laminated structure, a portion that is not etched is left at an...
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7481943 |
Method suitable for etching hydrophillic trenches in a substrate
A method suitable for etching hydrophilic trenches into a substrate, such as silicon, is provided. The method comprises etching and sidewall passivation processes for achieving anisotropy....
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7476329 |
Methods for contacting conducting layers overlying magnetoelectronic elements of MRAM devices
A method for contacting an electrically conductive layer overlying a magnetoelectronics element includes forming a memory element layer overlying a dielectric region. A first electrically...
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7462504 |
Surface-emitting type light-emitting diode and fabrication method thereof
A surface-emitting type light-emitting diode includes a substrate, a p-n junction layer elevated on a portion of the substrate to emit light, and a first isolator layer formed on a sidewall of the...
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7455893 |
Staggered in-situ deposition and etching of a dielectric layer for HDP-CVD
A method and apparatus for depositing a conformal dielectric layer employing a dep-etch technique features selectively reducing the flow of deposition gases into a process chamber where a substrate...
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7439143 |
Flash memory device and method of manufacturing the same
Disclosed is a flash memory device. The flash memory device includes a plurality of trench lines in an isolation region of a semiconductor device, a common source region along a word line (WL)...
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7435536 |
Method to align mask patterns
Alignment tolerances between narrow mask lines, for forming interconnects in the array region of an integrated circuit, and wider mask lines, for forming interconnects in the periphery of the...
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7435683 |
Apparatus and method for selectively recessing spacers on multi-gate devices
Embodiments of an apparatus and methods for fabricating a spacer on one part of a multi-gate transistor without forming a spacer on another part of the multi-gate transistor are generally described...
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7432120 |
Method for realizing a hosting structure of nanometric elements
Method for manufacturing a hosting structure of nanometric elements comprising the steps of depositing on an upper surface of a substrate, of a first material, a block-seed having at least one side...
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7432172 |
Plasma etching method
A plasma etching method for etching an object to be processed, which has at least an etching target layer and a patterned mask layer formed on the etching target layer, to form a recess...
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7427568 |
Method of forming an interconnect structure
A method of layer formation on a substrate with high aspect ratio features is disclosed. The layer is formed from a gas mixture comprising one or more process gases and one or more etch species....
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7425277 |
Method for hard mask CD trim
Broadly speaking, methods and an apparatus are provided for removing an inorganic material from a substrate. More specifically, the methods provide for removing the inorganic material from the...
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7413987 |
Method for manufacturing a semiconductor device
There is disclosed a method of manufacturing a semiconductor device, wherein an Si 3 N 4 film is formed as a mask member on the surface of a silicon substrate, then etched to form an STI trench. A...
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7407890 |
Patterning sub-lithographic features with variable widths
A method of processing a substrate of a device comprises the as following steps. Form a cap layer over the substrate. Form a dummy layer over the cap layer, the cap layer having a top surface. Etch...
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7387927 |
Reducing oxidation under a high K gate dielectric
A metal layer is formed on a dielectric layer, which is formed on a substrate. After forming a masking layer on the metal layer, the exposed sides of the dielectric layer are covered with a polymer...
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7381638 |
Fabrication technique using sputter etch and vacuum transfer
First material ( 106 ) is situated on the surface of a substructure ( 100 and 102 ) and in an opening ( 104 ), such as a Wench, that extends partway through the substructure. Second material (...
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7381943 |
Neutral particle beam processing apparatus
The present invention relates to a neutral particle beam processing apparatus. More specifically, the present invention relates to a neutral particle beam processing apparatus comprising a plasma...
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7368385 |
Method for producing a structure on the surface of a substrate
The present invention relates to a method for producing a structure serving as an etching mask on the surface of a substrate. In this case, a first method involves forming a first partial structure...
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7354523 |
Methods for sidewall etching and etching during filling of a trench
A method for sidewall etching includes providing a substrate having a trench defined therein, with the trench having fill material disposed over a bottom thereof, along a sidewall thereof, and at...
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7332439 |
Metal gate transistors with epitaxial source and drain regions
An MOS transistor formed on a heavily doped substrate is described. Metal gates are used in low temperature processing to prevent doping from the substrate from diffusing into the channel region of...
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7326651 |
Method for forming damascene structure utilizing planarizing material coupled with compressive diffusion barrier material
This invention relates to the manufacture of dual damascene interconnect structures in integrated circuit devices. Specifically, a method is disclosed for forming a single or dual damascene...
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7311850 |
Method of forming patterned thin film and method of fabricating micro device
In a method of forming a patterned thin film, first, an etching stopper film and a film to be patterned are formed in this order on a base layer. Next, a patterned first film is formed on the film...
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7294580 |
Method for plasma stripping using periodic modulation of gas chemistry and hydrocarbon addition
A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for...
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7291563 |
Method of etching a substrate; method of forming a feature on a substrate; and method of depositing a layer comprising silicon, carbon, and fluorine onto a semiconductor substrate
The invention includes methods of etching substrates, methods of forming features on substrates, and methods of depositing a layer comprising silicon, carbon and fluorine onto a semiconductor...
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7259098 |
Methods for fabricating semiconductor devices
Semiconductor devices and methods for fabricating a semiconductor devices are disclosed. A disclosed method comprises: forming a first gate electrode functioning as a flash memory; forming first...
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7238619 |
Method for eliminating bridging defect in via first dual damascene process
A via-first dual damascene process is disclosed. When forming trench lines directly above two small pitched, dense via openings having diameter that is substantially equal to the line width of the...
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7235489 |
Device and method to eliminate shorting induced by via to metal misalignment
The present invention provides an interconnect that can be employed in an integrated circuit. The interconnect includes a metal line located over a substrate, a dielectric layer located over the...
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