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7618894 |
Multi-step selective etching for cross-point memory
Multi-step selective etching. Etching an unmasked region associated with each layer of a plurality of layers, the plurality of layers comprising a stack, wherein the unmasked region of each of the...
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7608544 |
Etching method and storage medium
An etching method which makes it possible to obtain a desired etching shape with ease, and a computer-readable storage medium storing a program for implementing the method. The etching method is...
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7608539 |
ALD method and apparatus
A method and an apparatus for executing efficient and cost-effective Atomic Layer Deposition (ALD) at low temperatures are presented. ALD films such as oxides and nitrides are produced at low...
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7605084 |
Method of gap-filling using amplitude modulation radio frequency power
A method of filling a gap on a substrate comprises disposing the substrate, on which the gap is formed, on a susceptor in a chamber; applying a source power to the chamber to generate plasmas into...
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7579280 |
Method of patterning a film
A method of patterning a thin film. The method includes forming a mask on a film to be patterned. The film is then etched in alignment with the mask to form a patterned film having a pair of...
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7576009 |
Method for forming fine pattern of semiconductor device
A method for forming a fine pattern of a semiconductor device comprises forming a deposition pattern including first, second, and third mask patterns over a semiconductor substrate having an...
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7576008 |
Method for forming buried contact electrode of semiconductor device having pn junction and optoelectronic semiconductor device using the same
Disclosed is a method for manufacturing an optoelectronic semiconductor device having a p-n junction diode, which includes the steps of: (a) etching at least one surface of the p-n junction diode...
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7576002 |
Multi-step barrier deposition method
A method of forming barrier layers in a via hole extending through an inter-level dielectric layer and including a preformed first barrier coated onto the bottom and sidewalls of the via holes. In...
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7572733 |
Gas switching during an etch process to modulate the characteristics of the etch
Gas switching is used during an etch process to modulate the characteristics of the etch. The etch process comprises a sequence of at least three steps, wherein the sequence is repeated at least...
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7572686 |
System for thin film deposition utilizing compensating forces
A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film...
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7569484 |
Plasma and electron beam etching device and method
Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a...
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7563716 |
Polishing method
A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable...
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7563379 |
Dry etching method and photonic crystal device fabricated by use of the same
In a dry etching method in which clusters formed by agglomeration of atoms or molecules are ionized and accelerated as a cluster ion beam for irradiation of an object surface to etch away therefrom...
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7560389 |
Method for fabricating semiconductor element
A method for fabricating a semiconductor element on a semiconductor substrate having a support substrate and a semiconductor layer above the support substrate. The method includes preparing the...
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7560385 |
Etching systems and processing gas specie modulation
A method and system for etching a substrate control selectivity of the etch process by modulating the gas specie of the reactants. The gas specie selectively form and etch a buffer layer that...
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7544620 |
Process for digging a deep trench in a semiconductor body and semiconductor body so obtained
A process for digging deep trenches in a body of semiconductor material includes forming a mask having an opening, above a surface of a semiconductor body. A passivating layer is conformally formed...
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7541288 |
Methods of forming integrated circuit structures using insulator deposition and insulator gap filling techniques
Methods of forming integrated circuit devices include depositing an electrically insulating layer onto an integrated circuit substrate having integrated circuit structures thereon. This deposition...
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7538036 |
Methods of forming openings, and methods of forming container capacitors
A patterned mask can be formed as follows. A first patterned photoresist is formed over a masking layer and utilized during a first etch into the masking layer. The first etch extends to a depth in...
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7528076 |
Method for manufacturing gate oxide layer with different thicknesses
A method of manufacturing gate oxide layers with different thicknesses is disclosed. The method includes that a substrate is provided first. The substrate has a high voltage device region and a low...
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7514014 |
High density plasma chemical vapor deposition process
A method for depositing dielectric material into gaps between wiring lines in the formation of a semiconductor device includes the formation of a cap layer and the formation of gaps into which high...
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7476621 |
Halogen-free noble gas assisted H2 plasma etch process in deposition-etch-deposition gap fill
Plasma etch processes incorporating H 2 /Noble gas etch chemistries. In particular, high density plasma chemical vapor etch-enhanced (deposition-etch-deposition) gap fill processes incorporating...
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7476618 |
Selective formation of metal layers in an integrated circuit
A method for enhancing the reliability of copper interconnects and/or contacts, such as the bottom of vias exposing top surfaces of buried copper, or at the top of copper lines just after CMP. The...
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7476610 |
Removable spacer
A method for forming semiconductor devices is provided. A gate stack is formed over a surface of a substrate. A plurality of cycles for forming polymer spacers on sides of the gate stack is...
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7473645 |
Method of depositing a layer comprising silicon, carbon, and fluorine onto a semiconductor substrate
The invention includes methods of etching substrates, methods of forming features on substrates, and methods of depositing a layer comprising silicon, carbon and fluorine onto a semiconductor...
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7459400 |
Patterned structures fabricated by printing mask over lift-off pattern
A patterned integrated circuit structure defining a gap or via is fabricated solely by digital printing and bulk processing. A sacrificial lift-off pattern is printed or otherwise formed over a...
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7455893 |
Staggered in-situ deposition and etching of a dielectric layer for HDP-CVD
A method and apparatus for depositing a conformal dielectric layer employing a dep-etch technique features selectively reducing the flow of deposition gases into a process chamber where a substrate...
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7439143 |
Flash memory device and method of manufacturing the same
Disclosed is a flash memory device. The flash memory device includes a plurality of trench lines in an isolation region of a semiconductor device, a common source region along a word line (WL)...
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7435684 |
Resolving of fluorine loading effect in the vacuum chamber
This invention relates to electronic device fabrication processes for making devices such as semiconductor wafers and resolves the fluorine loading effect in the reaction chamber of a HDP CVD...
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7429533 |
Pitch reduction
A method for providing features in an etch layer is provided. A sacrificial patterned layer with sacrificial features is provided over an etch layer. Conformal sidewalls are formed in the...
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7427568 |
Method of forming an interconnect structure
A method of layer formation on a substrate with high aspect ratio features is disclosed. The layer is formed from a gas mixture comprising one or more process gases and one or more etch species....
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7413960 |
Method of forming floating gate electrode in flash memory device
A method of forming a floating gate electrode in a flash memory device. The method includes forming an isolation film in an inactive region so that a step with a predetermined thickness can be...
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7410901 |
Submicron device fabrication
A method for fabricating substrate material to include trenches and unreleased beams with submicron dimensions includes etching a first oxide layer on the substrate to define a first set of voids...
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7405139 |
Prevention of backside cracks in semiconductor chips or wafers using backside film or backside wet etch
A method of preventing the formation of cracks on the backside of a silicon (Si) semiconductor chip or wafer during the processing thereof. Also provided is a method for inhibiting the propagation...
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7390748 |
Method of forming a polishing inhibiting layer using a slurry having an additive
A polishing inhibiting layer forming additive for a slurry, the slurry so formed, and a method of chemical mechanical polishing are disclosed. The polishing inhibiting layer is formed through...
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7384873 |
Manufacturing process of semiconductor device
A method of manufacturing a semiconductor device, includes: forming a resin layer with a resin containing an aromatic compound on a surface, where an electrode is formed, of a semiconductor...
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7381638 |
Fabrication technique using sputter etch and vacuum transfer
First material ( 106 ) is situated on the surface of a substructure ( 100 and 102 ) and in an opening ( 104 ), such as a Wench, that extends partway through the substructure. Second material (...
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7375032 |
Semiconductor substrate thinning method for manufacturing thinned die
In a method according to the present invention, a substrate thinning process is performed on a bumped substrate prior to the ultimate solder reflow process to heal bump defects caused by the...
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7371671 |
System and method for photolithography in semiconductor manufacturing
A method for forming a semiconductor device includes forming a photoresist layer over a substrate and patterning the photoresist layer to form photoresist portions. A second layer is formed over...
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7358184 |
Method of forming a conductive via plug
A method of forming a conductive via plug is disclosed. The conductive via plug is formed by printing a solution comprising a solvent with insulating material dissolve capability and a conductive...
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7345002 |
Replication and transfer of microstructures and nanostructures
A method for the duplication of microscopic patterns from a master to a substrate is disclosed, in which a replica of a topographic structure on a master is formed and transferred when needed onto...
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7297640 |
Method for reducing argon diffusion from high density plasma films
A two-step high density plasma-CVD process is described wherein the argon content in the film is controlled by using two different argon concentrations in the argon/silane/oxygen gas mixture used...
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7294578 |
Use of a plasma source to form a layer during the formation of a semiconductor device
A method used to form a semiconductor device having a capacitor comprises placing a semiconductor wafer assembly into a chamber of a plasma source, the wafer assembly comprising a layer of...
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7291561 |
MEMS device integrated chip package, and method of making same
The present invention relates to a chip package that includes a semiconductor device and at least one micro electromechanical structure (MEMS) such that the semiconductor device and the MEMS form...
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7256134 |
Selective etching of carbon-doped low-k dielectrics
The present invention includes a process for selectively etching a low-k dielectric material formed on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture...
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7256121 |
Contact resistance reduction by new barrier stack process
The present invention provides a method for forming an interconnect on a semiconductor substrate 100 . The method includes forming an opening 230 over an inner surface of the opening 130 , the...
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7244679 |
Methods of forming silicon quantum dots and methods of fabricating semiconductor memory devices using the same
Techiques for forming a silicon quantum dot, which can be applied to the formation of a semiconductor memory device, are disclosed. The techniques may include depositing a first dielectric layer on...
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7235478 |
Polymer spacer formation
A polymer spacer material may increase the dimensions of the patterned photoresist that is used as a mask to etch the layers below the photoresist, which in turn translates into smaller dimensions...
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7226869 |
Methods for protecting silicon or silicon carbide electrode surfaces from morphological modification during plasma etch processing
Methods for forming a protective polymeric coating on a silicon or silicon-carbide electrode of a plasma processing chamber are provided. The polymeric coating provides protection to the underlying...
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7217945 |
Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory cell and structures obtained thereby
The present invention relates to a process of forming a phase-change memory. A lower electrode is disposed in a first dielectric film. The lower electrode comprises an upper section and a lower...
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7205240 |
HDP-CVD multistep gapfill process
A gapfill process is provided using cycling of HDP-CVD deposition, etching, and deposition step. The fluent gas during the first deposition step includes an inert gas such as He, but includes H 2 ...
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