Matches 301 - 350 out of 364 < 1 2 3 4 5 6 7 8 >
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5354417 Etching MoSi.sub.2 using SF.sub.6, HBr and O.sub.2  
A process for selectively etching a substrate 20 having a molybdenum silicide layer 25 with a resist material 26 on portions of the molybdenum silicide layer 25 is described. The substrate 26 is...
5338393 Method for the local removal of UV-transparent insulation layers on a semiconductor substrate  
UV-transparent insulating layers, particularly silicon oxide, over conductive structures on a semiconductor substrate, for example an aluminum interconnect, are locally removed in order to expose...
5336636 Method for contacting conductive structures in VLSI circuits  
UV-transparent insulating layers, particularly silicon oxide, overlying conductive structures on a semiconductor substrate, for example an aluminum interconnect, are locally removed in order to...
5318668 Dry etching method  
The invention provides an improved dry etching method for selectively etching a silicon nitride layer 3 formed on the surface of a SiO 2 layer 2 formed on a p-type semiconductor substrate, the...
5314578 Process for etching a multi-layer substrate  
A carbon-containing, chemical etchant protective patterned layer is formed on a multi-layer substrate including a silicon dioxide layer formed on an underlying silicon or metal silicide layer by...
5275977 Insulating film forming method for semiconductor device interconnection  
Disclosed herein are an insulating film forming method for semiconductor device interconnection and a plasma treatment system for use in the method. The method comprises (i) a step of forming an...
5264396 Method for enhancing nitridation and oxidation growth by introducing pulsed NF.sub.3  
A method and system for fabricating semiconductor wafers is disclosed, wherein a rugged and/or smooth, atomically clean, semiconductor substrate is provided in a rapid thermal processing ("RTP")...
5262002 Method for manufacturing a trench structure in a substrate  
A trench mask containing SiO 2 is produced on a substrate (1) of single-crystal silicon. After deposition of a first Si 3 N 4 layer, first Si 3 N 4 spacers (31) are formed by anisotropic...
5254213 Method of forming contact windows  
A method of forming contact windows in an insulating layer is disclosed. The contact windows extend down to an underlying metal layer which is formed under the insulating layer. The method...
5252177 Method for forming a multilayer wiring of a semiconductor device  
A method for forming a multilayer wiring, in a method for manufacturing a semiconductor device, is disclosed. The method comprises: forming a contact hole 33 on the surface of a conductive layer 29...
5236547 Method of forming a pattern in semiconductor device manufacturing process  
In a method of forming a pattern in semiconductor device manufacturing process, a thin film consisting of a silicon nitride film is formed on a substrate. Ga ions are implanted by a focussed ion...
5236549 Process for plasma etching  
Plasma is produced continuously in an etching switching period for switching from a partial plasma etching process to the next partial plasma etching process to thereby proceed with anisotropic...
5211790 Dry etching method by sulfur conditioning  
A method for anisotropic etching of a layer of a silicon-based material, using an SF 6 gas, a versatile etching gas, is proposed. Sulfur (S) is used as a sidewall protection substance. This sulfur...
5200028 Etching process of silicon material  
A process is disclosed for etching a silicon-based structure comprised of a silicon layer and a high-melting silicide layer. Good shaping results from etching of the two layers with use of two...
5182234 Profile tailored trench etch using a SF.sub.6 -O.sub.2 etching composition wherein both isotropic and anisotropic etching is achieved by varying the amount of oxygen  
A dopant-opaque layer of polysilicon is deposited on gate oxide on the upper substrate surface to serve as a pattern definer during fabrication of the device. It provides control over successive P...
5110408 Process for etching  
The present invention relates to the etching of a gate film, a tungsten film, a silicon film, etc. In the present invention, use is made of an etching gas comprising a mixture composed of a...
5100504 Method of cleaning silicon surface  
In the first step, a silicon oxide film (21) on a silicon surface (22) is etched away using a CHF 3 gas. After the silicon oxide film is removed, organic matter (23) of the C x F y group remains...
5096849 Process for positioning a mask within a concave semiconductor structure  
A method is described for selectively masking sidewall regions of a concave surface formed in a semiconductor body, the method comprising the steps of: forming a conformal layer of masking material...
5089442 Silicon dioxide deposition method using a magnetic field and both sputter deposition and plasma-enhanced CVD  
In plasma enhanced chemical vapor deposition (PECVD) of silicon dioxide on a substrate, voids and discontinuities are reduced by first depositing silicon dioxide in a sputter each chamber (22) in...
5082524 Addition of silicon tetrabromide to halogenated plasmas as a technique for minimizing photoresist deterioration during the etching of metal layers  
An enhanced halogenated plasma for ion-assisted plasma etches to which silicon tetrabromide has been added to retard erosion, flowing and reticulation of photoresist, particularly during an etch of...
5079178 Process for etching a metal oxide coating and simultaneous deposition of a polymer film, application of this process to the production of a thin film transistor  
The process of the invention consists of subjecting a metal oxide coating (106, 108), located on a glass substrate (100), to the action of a gaseous plasma (109) containing 10 to 88% by volume of...
5024722 Process for fabricating conductors used for integrated circuit connections and the like  
A process for defining conductors on a integrated circuit substrate which includes selectively dry etching through a metal layer on the substrate using plasma reactants including conductor sidewall...
5021365 Compound semiconductor interface control using cationic ingredient oxide to prevent fermi level pinning  
Control of the Fermi level pinning problem and the production of flat band surface performance in compound semiconductors is achieved by providing a cationic oxide free of anionic species on the...
4981550 Semiconductor device having tungsten plugs  
A metallization scheme useful for integrated circuits uses a buffer layer to ensure that the etch back of a contact metal, such as tungsten, deposited over the buffer layer, can be controlled to...
4923828 Gaseous cleaning method for silicon devices  
A method for cleaning metallic impurities from a silicon surface of a semiconductor device is described. The first method includes, in sequence, the steps of: (a) exposing the silicon surface...
4918028 Process for photo-assisted epitaxial growth using remote plasma with in-situ etching  
A process for forming deposited film, which comprises: (a) the step of preparing a substrate having crystal nuclei or regions where crystal nuclei are selectively formed scatteringly on the...
4918031 Processes depending on plasma generation using a helical resonator  
Anisotropic plasma etching is accomplished utilizing a helical resonator operated at relatively low gas pressure. The use of this combination yields an extremely high flux of ionic species with...
4855015 Dry etch process for selectively etching non-homogeneous material bilayers  
A plasma etching process employs a halogen liberating gas to selectively etch a top semiconductor layer of a bilayer with respect to a bottom semiconductor layer. A fluorine rich gas reacts with a...
4855017 Trench etch process for a single-wafer RIE dry etch reactor  
A plasma dry etch process for trench etching in single slice RIE etch reactors wherein a selective sidewall passivation is accomplished to control the profile of the trench being etched. The...
4806202 Field enhanced tunnel oxide on treated substrates  
A method for growing tunnel oxides on a specially treated substrate surface. The method comprises steps for roughening the substrate surface to induce low tunneling voltage in the subsequently...
4784719 Dry etching procedure  
The presence of material deposited on the sidewall during device fabrication utilizing plasma-effected etching of semiconductor materials has significant consequences in the properties of these...
4749663 Process of fabricating a semiconductor IC involving simultaneous sputter etching and deposition  
In a process of fabricating a semiconductor IC having a plurality of metal wiring conductor layers on a semiconductor substrate and an insulation layer between the metal wiring conductor layers,...
4741799 Anisotropic silicon etching in fluorinated plasma  
A method of high rate anisotropic etching of silicon in a high pressure plasma is described. In one embodiment the etching ambient is a mixture of either NF 3 or SF 6 , an inert gas such as...
4713141 Anisotropic plasma etching of tungsten  
An anisotropic plasma etching of a tungsten metal film of a semiconductor device is disclosed. The device is placed in a plasma etcher using SF 6 and Cl 2 gas mixture to anisotropically etch the...
4702795 Trench etch process  
A plasma dry etch process for etching deep trenches in single crystal silicon material with controlled wall profile, for trench capacitors or trench isolation structures. HCl is used as an etchant...
4690729 Tapered trench process  
A plasma dry etch process for etching deep trenches in single crystal silicon material with controlled wall profile, for trench capacitors or trench isolation structures. HCl is used as an etchant...
4681653 Planarized dielectric deposited using plasma enhanced chemical vapor deposition  
Deposition in an RIE type plasma reactor of interlevel oxide at high power and low pressure yielding a topography similar to reflowed PSG is disclosed. Deposition rates and film purity are limited...
4668334 Method and apparatus for applying a layer of photosensitive material to a semiconductor wafer  
In a method of applying a layer of photosensitive material to a semiconductor material wafer (3), the photosensitive material is applied in liquid form to the wafer and the wafer is then rotated in...
4648939 Formation of submicrometer lines  
The formation of elongated structures, such as lines, having a linewidth substantially less than one micrometer is described. An elongated structure of a first material having opposed sides, a...
4634826 Method for producing electric circuits in a thin layer, the tool to implement the method, and products obtained therefrom  
Thin-layered conductive or semi-conductive electric circuits are made on a thin conductive or semi-conductive layer that was previously deposited on an electric insulating substrate. The electric...
4617087 Method for differential selective deposition of metal for fabricating metal contacts in integrated semiconductor circuits  
A deposition technique for forming metal regions on semiconductor substrates, and more particularly to a fabrication method for the differential selective deposition of tungsten for forming...
4595601 Method of selectively forming an insulation layer  
An insulation layer is selectively formed by exposing the surface of a workpiece to an atmosphere comprising a mixture of a halogen-based gas and a raw gas containing a compoundable element...
4555303 Oxidation of material in high pressure oxygen plasma  
A process is disclosed for removing carbonaceous material from a surface in a high pressure oxygen plasma. A surface, such as a surface of a silicon ribbon, having a layer of carbonaceous material...
4533430 Process for forming slots having near vertical sidewalls at their upper extremities  
A slot formation process is provided in which the regions near the mouth of the slot are coated, while the slot is being formed, with a material which is resistant to the etchant being used to form...
4529475 Dry etching apparatus and method using reactive gases  
A dry etching apparatus is disclosed which uses reactive gases and which is capable of achieving anisotropic etching without causing radiation damage to a workpiece to be selectively etched. The...
4521275 Plasma etch chemistry for anisotropic etching of silicon  
A plasma etch chemistry which allows a near perfectly vertical etch of silicon is disclosed. A Cl-containing compound such as BCl 3 has Br 2 added to it, readily allowing anisotropic etching of...
4490209 Plasma etching using hydrogen bromide addition  
The disclosure relates to a plasma etch chemistry which allows a near perfectly anisotropic etch of silicon. A Cl-containing compound such as HCl has HBr added thereto, readily allowing the...
4468285 Plasma etch process for single-crystal silicon with improved selectivity to silicon dioxide  
A plasma etching composition is set forth which comprises chlorine in an amount from about 40% to about 90%, a shape modifier species in an amount from about 10% to about 60%, and an etching...
4432132 Formation of sidewall oxide layers by reactive oxygen ion etching to define submicron features  
This invention involves the defining of a submicron feature (21 or 93) in a structure, typically an insulated gate field effect transistor structure (30, 40, or 110). This feature is defined by a...
4422897 Process for selectively etching silicon  
A process is provided for selectively etching silicon by means of a plasma etching composition wherein an etching target is connected to a radio frequency voltage and a source of silicon and oxygen...
Matches 301 - 350 out of 364 < 1 2 3 4 5 6 7 8 >