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7608539 |
ALD method and apparatus
A method and an apparatus for executing efficient and cost-effective Atomic Layer Deposition (ALD) at low temperatures are presented. ALD films such as oxides and nitrides are produced at low...
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7598176 |
Method for photoresist stripping and treatment of low-k dielectric material
A plasma processing operation uses a gas mixture of N 2 and H 2 to both remove a photoresist film and treat a low-k dielectric material. The plasma processing operation prevents degradation of...
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7591071 |
Manufacturing Method of Semiconductive Element and Ink Jet Head Substrate
A semiconductor device includes a lateral end surface and a connection electrode for external electrical connection. The connection electrode is exposed at the side surface. A manufacturing method...
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7580279 |
Flash memory cells with reduced distances between cell elements
An anti-reflective coating (ARC) is formed over the various layers involved in a cell fabrication process. The ARC is selectively etched such that the edges of the etched areas of the ARC slope...
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7576009 |
Method for forming fine pattern of semiconductor device
A method for forming a fine pattern of a semiconductor device comprises forming a deposition pattern including first, second, and third mask patterns over a semiconductor substrate having an...
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7576008 |
Method for forming buried contact electrode of semiconductor device having pn junction and optoelectronic semiconductor device using the same
Disclosed is a method for manufacturing an optoelectronic semiconductor device having a p-n junction diode, which includes the steps of: (a) etching at least one surface of the p-n junction diode...
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7569403 |
Pattern evaluation method, manufacturing method of semiconductor device, correction method of mask pattern and manufacturing method of exposure mask
A pattern evaluation method using a circuit arrangement provided with N (N is a natural number of 2 or greater) circuit groups having wiring whose widths are different to each other, each circuit...
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7563702 |
Method for fabricating semiconductor device
A method for fabricating a semiconductor device includes providing a substrate formed with a plurality of gate lines, each gate line including a hard mask, forming an etch barrier layer over the...
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7560389 |
Method for fabricating semiconductor element
A method for fabricating a semiconductor element on a semiconductor substrate having a support substrate and a semiconductor layer above the support substrate. The method includes preparing the...
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7560376 |
Method for adjoining adjacent coatings on a processing element
Two or more coatings applied to processing elements of a plasma processing system are treated with protective barriers or coatings. A method is described for adjoining two or more coatings on the...
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7557025 |
Method of etching a dielectric layer to form a contact hole and a via hole and damascene method
A method of etching a dielectric layer by a conductive mask includes providing the dielectric layer on a substrate, forming a pattern conductive mask on the dielectric layer, the pattern conductive...
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7556994 |
Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making
Wide bandgap semiconductor devices including normally-off VJFET integrated power switches are described. The power switches can be implemented monolithically or hybridly, and may be integrated with...
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7556989 |
Semiconductor device having fuse pattern and methods of fabricating the same
A semiconductor device includes a semiconductor substrate having a fuse region and an interconnection region, a first insulating layer formed in the fuse region and the interconnection region, a...
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7547601 |
Low power electrically alterable nonvolatile memory cells and arrays
A method of providing a memory cell includes providing a body of a semiconductor material having a first conductivity type, arranging a filter of a conductor-filter system in contact with a first...
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7544619 |
Method of fabricating semiconductor device
An insulating film is formed on a main surface of a substrate. A conductive film is formed on the insulating film. A lower layer resist film, an intermediate layer, an anti-reflection film and an...
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7541288 |
Methods of forming integrated circuit structures using insulator deposition and insulator gap filling techniques
Methods of forming integrated circuit devices include depositing an electrically insulating layer onto an integrated circuit substrate having integrated circuit structures thereon. This deposition...
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7540968 |
Micro movable device and method of making the same using wet etching
A micro movable device includes a base substrate, a fixed portion bonded to the base substrate, a movable portion having a fixed end connected to the fixed portion and extending along the base...
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7528075 |
Self-masking defect removing method
A method for removing defects from a semiconductor surface is disclosed. The surface of the semiconductor is first coated with a protective layer, which is later thinned to selectively reveal...
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7524750 |
Integrated process modulation (IPM) a novel solution for gapfill with HDP-CVD
A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an...
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7514364 |
Hydrophilicity treatment method of a silicon wafer
In a hydrophilicity treatment method including the step of rotating, on a polishing cloth, a mirror surface of a silicon wafer subjected to mirror-polishing followed by rinsing treatment while the...
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7514361 |
Selective thin metal cap process
A method of creating metal caps on copper lines within an inter-line dielectric (ILD) deposits a thin (e.g., 5 nm) metal blanket film (e.g., Ta/TaN) on top the copper lines and dielectric, after...
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7514013 |
Devices with thermoelectric and thermodiodic characteristics and methods for manufacturing same
The present invention relates to methods for forming thermoelectric and thermodiodic devices including a monolayer of multiple conductive material units with a first surface including a composite...
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7504338 |
Method of pattern etching a silicon-containing hard mask
Disclosed herein is a method of pattern etching a layer of a silicon-containing dielectric material. The method employs a plasma source gas including CF 4 to CHF 3 , where the volumetric ratio of...
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7501069 |
Flexible structures for sensors and electronics
This invention provides free-standing structures, functionalized free-standing structures and functional devices that are flexible, including nano- and micromachined flexible fabrics comprising...
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7497959 |
Methods and structures for protecting one area while processing another area on a chip
Increased protection of areas of a chip are provided by both a mask structure of increased robustness in regard to semiconductor manufacturing processes or which can be removed with increased...
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7494929 |
Automatic gain control
Methods and apparatus for automatic gain control. A film on a substrate is polished by a chemical mechanical polisher that includes a polishing pad and an in-situ monitoring system. The polishing...
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7494921 |
Aluminum metal line of a semiconductor device and method of fabricating the same
A method of forming an aluminum line of a semiconductor device where first A metal thin layer, a first aluminum layer, and a first B metal thin layer are sequentially applied on an interlayer...
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7491343 |
Line end shortening reduction during etch
A method for etching features in an etch layer is provided. A patterned photoresist mask is provided over the etch layer, the photoresist mask having at least one photoresist line having a pair of...
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7488611 |
Devices and methods for integrated circuit manufacturing
Integrated circuits and methods for producing them are provided. In particular, integrated circuits with shielding elements are provided.
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7476622 |
Method of forming a contact in a semiconductor device
A gate is formed on a device formation region of a semiconductor substrate, and source and drain regions are formed in the device formation region of the semiconductor substrate adjacent respective...
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7476621 |
Halogen-free noble gas assisted H2 plasma etch process in deposition-etch-deposition gap fill
Plasma etch processes incorporating H 2 /Noble gas etch chemistries. In particular, high density plasma chemical vapor etch-enhanced (deposition-etch-deposition) gap fill processes incorporating...
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7476618 |
Selective formation of metal layers in an integrated circuit
A method for enhancing the reliability of copper interconnects and/or contacts, such as the bottom of vias exposing top surfaces of buried copper, or at the top of copper lines just after CMP. The...
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7473645 |
Method of depositing a layer comprising silicon, carbon, and fluorine onto a semiconductor substrate
The invention includes methods of etching substrates, methods of forming features on substrates, and methods of depositing a layer comprising silicon, carbon and fluorine onto a semiconductor...
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7459699 |
Method of determining processing position in charged particle beam apparatus, and infrared microscope used in the method
A laser mark which will be the positioning mark for a secondary charged particle image in the charged particle beam apparatus is applied by moving the sample processing/observation area in the...
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7459399 |
Method for manufacturing probe structure of probe card
A method for manufacturing a probe structure of a probe card is disclosed. In accordance with the method of the present invention, a dual etching process of a silicon substrate or an etching...
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7459363 |
Line edge roughness reduction
A method for reducing line edge roughness comprises forming a masking structure on a substrate assembly, wherein the substrate assembly includes a number of layers. The method includes forming a...
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7459266 |
Phase-change memory cell and method of fabricating the phase-change memory cell
A memory cell and method of fabricating the memory cell includes an insulating layer formed on a first electrode layer, the insulating layer having a first opening, a stencil layer formed on the...
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7452826 |
Oxidation method and oxidation system
An oxidation method is capable of forming oxide films in an improved interfilm thickness uniformity. The oxidation method includes the steps of supplying an oxidizing gas and a reducing gas into a...
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7446041 |
Full sequence metal and barrier layer electrochemical mechanical processing
A method and apparatus for electrochemically processing metal and barrier materials is provided. In one embodiment, a method for electrochemically processing a substrate includes the steps of...
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7445726 |
Photoresist trimming process
A photoresist trimming process is described. An etcher equipped with an etching chamber, a wafer holder, a TCP source and a TCP window is provided. After plasma is generated in the etching chamber,...
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7442647 |
Structure and method for formation of cladded interconnects for MRAMs
A structure and method for fabricating a top strap in a magnetic random access memory, MRAM, comprising a damascene process forming a trench in a dielectric layer and resulting in a metal conductor...
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7442624 |
Deep alignment marks on edge chips for subsequent alignment of opaque layers
A method of forming alignment marks on edge chips in a kerf region of a semiconductor workpiece. The alignment marks are formed in at least one material layer of the semiconductor device. The...
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7439184 |
Method of making comb-teeth electrode pair
A pair of comb-teeth electrodes are made from a material substrate including a first conduction layer, a second conduction layer and an intervening insulation layer. The paired electrodes includes...
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7439143 |
Flash memory device and method of manufacturing the same
Disclosed is a flash memory device. The flash memory device includes a plurality of trench lines in an isolation region of a semiconductor device, a common source region along a word line (WL)...
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7439087 |
Semiconductor device and manufacturing method thereof
A technology for reducing distance between adjacent pixel electrodes to smaller than the limit set by conventional process margin and also preventing adjacent pixel electrodes from being short...
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7435683 |
Apparatus and method for selectively recessing spacers on multi-gate devices
Embodiments of an apparatus and methods for fabricating a spacer on one part of a multi-gate transistor without forming a spacer on another part of the multi-gate transistor are generally described...
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7432206 |
Self-aligned manufacturing method, and manufacturing method for thin film fuse phase change ram
A method for manufacturing a self aligned narrow structure over a wider structure based on mask trimming. A method for manufacturing a memory device comprises forming an electrode layer on a...
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7432120 |
Method for realizing a hosting structure of nanometric elements
Method for manufacturing a hosting structure of nanometric elements comprising the steps of depositing on an upper surface of a substrate, of a first material, a block-seed having at least one side...
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7429533 |
Pitch reduction
A method for providing features in an etch layer is provided. A sacrificial patterned layer with sacrificial features is provided over an etch layer. Conformal sidewalls are formed in the...
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7429338 |
Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization
A composition and an associated method for chemical mechanical planarization (or other polishing) are described. The composition includes a surface-modified abrasive modified with at least one...
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