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9040423 Method for manufacturing semiconductor device  
A method for manufacturing a semiconductor device is provided. A substrate having a first area with a first poly layer and a second area with a second poly layer is provided. A nitride HM film is...
9034197 Method for separately processing regions on a patterned medium  
The disclosure relates generally to a method for fabricating a patterned medium. The method includes providing a substrate with an exterior layer under a lithographically patterned surface layer,...
9034736 Patterning  
The present invention provides a method of patterning an electronic or photonic material on a substrate comprising: forming a film of said electronic or photonic material on said substrate; and...
9034767 Facilitating mask pattern formation  
Mask pattern formation is facilitated by: providing a mask structure including at least one sacrificial spacing structure disposed above a substrate structure; disposing a spacer layer conformally...
9029262 Method of forming contact hole pattern  
A method of forming a contact hole pattern, including: a block copolymer layer forming step in which a layer containing a block copolymer having a plurality of blocks bonded is formed on a...
9029264 Methods for depositing a tin-containing layer on a substrate  
Methods of depositing a tin-containing layer on a substrate are disclosed herein. In some embodiments, a method of depositing a tin-containing layer on a substrate may include flowing a tin source...
9029261 Semiconductor device fabrication method and semiconductor device  
There is provided a method of fabricating a semiconductor device, the method including: forming a semiconductor component portion at a first surface of a substrate; applying a grinding treatment...
9029266 Semiconductor device manufacturing method  
According to one embodiment, a semiconductor device manufacturing method includes depositing a silicon film above a semiconductor substrate, forming an insulating film which includes silicon oxide...
9029263 Method of printing multiple structure widths using spacer double patterning  
An integrated circuit containing linear structures on regular pitch distances may be formed by forming linear mandrels over a layer of material for the linear structures, with mandrel pitch...
9023225 Pattern forming method  
A pattern forming method includes forming a pattern forming material film on a substrate as an etching target film, the pattern forming material film having an exposing section that has porosity...
9023730 Methods for fabricating integrated circuits including generating e-beam patterns for directed self-assembly  
Methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes generating an e-beam pattern for forming a DSA directing pattern...
9024295 Nanowire photodetector and image sensor with internal gain  
A 1D nanowire photodetector device includes a nanowire that is individually contacted by electrodes for applying a longitudinal electric field which drives the photocurrent. An intrinsic radial...
9018100 Damascene process using PVD sputter carbon film as CMP stop layer for forming a magnetic recording head  
Damascene processes using physical vapor deposition (PVD) sputter carbon film as a chemical mechanical planarization (CMP) stop layer for forming a magnetic recording head are provided. In one...
9012253 Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods  
Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods. A method for making an SSL device substrate in accordance with one embodiment of the...
9012328 Carbon addition for low resistivity in situ doped silicon epitaxy  
Embodiments of the present invention generally relate to methods of forming epitaxial layers and devices having epitaxial layers. The methods generally include forming a first epitaxial layer...
9006088 Method for forming semiconductor gate structure and semiconductor gate structure  
A method for forming a semiconductor gate structure and a semiconductor gate structure are provided. The method includes: providing a substrate with a Ge layer as a surface thereof; forming a Sn...
9006107 Patterned structure of semiconductor device and fabricating method thereof  
A method for fabricating a patterned structure in a semiconductor device is provided. First, a substrate with a first region and a second region is provided. Then, a plurality of sacrificial...
9000491 Layer formation with reduced channel loss  
Insulating layers can be formed over a semiconductor device region and etched in a manner that substantially reduces or prevents the amount of etching of the underlying channel region. A first...
8999105 Small-scale fabrication systems and methods  
An etch mask is formed on a substrate. The substrate is positioned in an enclosure configured to shield an interior of the enclosure from electromagnetic fields exterior to the enclosure; and the...
8999848 Method for forming fine pattern of semiconductor device using double spacer patterning technology  
A method of forming a fine pattern of a semiconductor device using double SPT process, which is capable of implementing a line and space pattern having a uniform fine line width by applying a...
9000567 Compound semiconductor substrate  
An object is to provide a compound semiconductor substrate and a surface-treatment method thereof, in which, even after the treated substrate is stored for a long period of time, resistance-value...
8993446 Method of forming a dielectric film  
A method for flowable oxide deposition is provided. An oxygen source gas is increased as a function of time or film depth to change the flowable oxide properties such that the deposited film is...
8993444 Method to reduce dielectric constant of a porous low-k film  
Embodiments of the present invention generally relate to methods for lowering the dielectric constant of low-k dielectric films used in semiconductor fabrication. In one embodiment, a method for...
8986560 Method for producing optical semiconductor device  
A method for producing an optical semiconductor device includes the steps of determining a wafer size to make a section arrangement including a plurality of sections in each of which the optical...
8987142 Multi-patterning method and device formed by the method  
A multi-patterning method includes: patterning at least two first openings in a hard mask layer over a substrate using a first mask; forming spacers within two of the at least two first openings,...
8987138 Nonvolatile memory device using semiconductor nanocrystals and method of forming same  
A method of making a nanoparticle array that includes replicating a dimension of a self-assembled film into a dielectric film, to form a porous dielectric film, conformally depositing a material...
8980751 Methods and systems of material removal and pattern transfer  
Polymerized material on a substrate may be removed by exposure to vacuum ultraviolet (VUV) radiation from an energy source within a gaseous atmosphere of a controlled composition. Following such...
8980111 Sidewall image transfer method for low aspect ratio patterns  
A method for patterning a substrate is described. The patterning method may include conformally depositing a material layer over a pattern according to a conformal deposition process, selectively...
8981211 Interlayer design for epitaxial growth of semiconductor layers  
An interlayer structure that, in one implementation, includes a combination of an amorphous or nano-crystalline seed-layer, and one or more metallic layers, deposited on the seed layer, with the...
8980752 Method of forming a plurality of spaced features  
A method of forming a plurality of spaced features includes forming sacrificial hardmask material over underlying material. The sacrificial hardmask material has at least two layers of different...
8973258 Manufacturing method of substrate structure  
A manufacturing method of substrate structure is provided. A base material having a core layer, a first patterned copper layer, a second patterned copper layer and at least one conductive via is...
8974678 Methods using block co-polymer self-assembly for sub-lithographic patterning  
Block copolymers can be self-assembled and used in methods as described herein for sub-lithographic patterning, for example. The block copolymers can be diblock copolymers, triblock copolymers,...
8975186 Double patterning methods and structures  
Various embodiments provide double patterning methods and structures. In an exemplary method, a to-be-etched layer can be provided. A stress layer can be formed on the to-be-etched layer. The...
8975731 Semiconductor device having an insulating layer structure and method of manufacturing the same  
In a semiconductor device having an insulating layer structure and method of manufacturing the same, a substrate including a first region and a second region may be provided. A first pattern...
8975185 Forming charge trap separation in a flash memory semiconductor device  
During formation of a charge trap separation in a semiconductor device, a polymer deposition is formed in a reactor using a first chemistry. In a following step, a second chemistry can be used to...
8962483 Interconnection designs using sidewall image transfer (SIT)  
Methodology enabling a generation of an interconnection design utilizing an SIT process is disclosed. Embodiments include: providing a hardmask on a substrate; forming a mandrel layer on the...
8956882 Method of manufacturing magnetoresistive element  
According to one embodiment, a method of manufacturing a magnetoresistive element, the method includes forming a first non-magnetic layer on a first magnetic layer, forming a second magnetic layer...
8956977 Semiconductor device production method and rinse  
The present invention provides a semiconductor device production method and a rinse used in the production method. The method includes: a sealing composition application process in which a...
8951917 Composition for forming resist underlayer film and patterning process using the same  
The invention provides a composition for forming a silicon-containing resist underlayer film comprising: (A) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a...
8951915 Methods for manufacturing a chip arrangement, methods for manufacturing a chip package, a chip package and chip arrangements  
A method for manufacturing a chip arrangement is provided, the method including: forming a hole in a carrier including at least one chip, wherein forming a hole in the carrier includes:...
8946089 Methods of forming contact holes  
Methods of forming contact holes include forming a first guide pattern over an etching target layer. The first guide pattern has first openings each extending in a first direction and each first...
8937016 Substrate preparation for selective area deposition  
A method of producing a patterned inorganic thin film element includes providing a substrate having a patterned thin layer of polymeric inhibitor on the surface. The substrate and the patterned...
8937014 Liquid treatment apparatus and liquid treatment method  
A liquid treatment apparatus of continuously performing a plating process on multiple substrates includes a temperature controlling container for accommodating a plating liquid; a temperature...
8937017 Method and apparatus for etching  
Embodiments of the invention relate to a substrate etching method and apparatus. In one embodiment, a method for etching a substrate in a plasma etch reactor is provided that include flowing a...
8932911 Integrated circuits and methods for fabricating integrated circuits with capping layers between metal contacts and interconnects  
Integrated circuits and methods for fabricating integrated circuits are provided. In an exemplary embodiment, a method for fabricating integrated circuits includes forming a metal contact...
8932476 Porous metal etching  
Apparatuses and methods are provided where porous metal is deposited on a substrate, a mask is provided on the porous metal and then an etching is performed.
8932954 Impurity analysis device and method  
According to one embodiment, an impurity analysis method comprises performing vapor-phase decomposition on a silicon-containing film formed on a substrate, heating the substrate at a first...
8932953 Composition for forming a silicon-containing resist underlayer film and patterning process using the same  
A composition for forming a silicon-containing resist underlayer film that contains: a component (A) including at least one or more compounds selected from the group consisting of a polymer having...
8932955 Triple patterning NAND flash memory with SOC  
A NAND flash memory array is initially patterned by forming a plurality of sidewall spacers according along sides of patterned portions of material. The pattern of sidewall spacers is then used to...
8927431 High-rate chemical vapor etch of silicon substrates  
Methods of etching a silicon substrate at a high rate using a chemical vapor etching process are provided. A silicon substrate may be etched by heating the silicon substrate in a process chamber...