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7288476 |
Controlled dry etch of a film
The controlled etch into a substrate or thick homogeneous film is accomplished by introducing a sacrificial film to gauge the depth to which the substrate/thick film has been etched. Optical...
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7282439 |
Anti-reflective coating doped with carbon for use in integrated circuit technology and method of formation
The invention pertains to films comprising silicon, oxygen and carbon and the use of the films in integrated circuit technology, such as capacitor constructions, DRAM constructions, semiconductive...
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7279349 |
Semiconductor optical device and manufacturing method thereof
In a dry etching step for an organic material film, a fluorine-containing member is disposed to the periphery of a semiconductor substrate disposed on a lower electrode or a tray for wafer...
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7279109 |
Method for manufacturing a photonic device and a photonic device
The present invention relates to a photonic device including a first device comprising a first set of layers, including at least a first waveguide layer, arranged in a mesa structure, and a second...
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7276445 |
Method for forming pattern using printing method
A method for forming a pattern is provided that includes: providing a cliché having a plurality of convex patterns; applying an adhesive force reinforcing agent onto each surface of the convex...
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7271098 |
Method of fabricating a desired pattern of electronically functional material
Provided is a method forming a desired pattern of electronically functional material 3 on a substrate 1 . The method comprises the steps of: creating a first layer of patterning material 2 on...
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7268081 |
Wafer-level transfer of membranes with gas-phase etching and wet etching methods
Techniques for transferring a membrane from one wafer to another wafer to form integrated semiconductor devices. In one implementation, a carrier wafer is fabricated to include a membrane on one...
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7262071 |
Micromechanical component and suitable method for its manufacture
A micromechanical component having a substrate conductive in at least some regions; an elastically deflectable diaphragm, which is conductive in at least some regions, arches over a front side of...
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7262136 |
Modified facet etch to prevent blown gate oxide and increase etch chamber life
A modified facet etch is disclosed to prevent blown gate oxide and increase etch chamber life. The modified facet etch is a two-stage process. The first stage is a plasma sputter etch to form a...
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7256135 |
Etching method and computer storage medium storing program for controlling same
An etching method of the present invention includes a first and a second process. In the first process, pattern widths of a pre-patterned mask layer are increased by depositing plasma reaction...
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7256127 |
Air gap formation
A method of forming air gaps within a solid structure is provided. In this method, a sacrificial material is covered by an overlayer. The sacrificial material is then removed through the overlayer...
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7253114 |
Self-aligned method for defining a semiconductor gate oxide in high voltage device area
A method is provided for forming at least three devices with different gate oxide thicknesses and different associated operating voltages, in the same integrated circuit device. The method includes...
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7250370 |
Two step post-deposition treatment of ILD layer for a lower dielectric constant and improved mechanical properties
A method of lowering the dielectric constant of an organosilicon low k dielectric layer while improving the hardness and thermal stability is provided. A deposited layer of carbon doped oxide, HSQ,...
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7247568 |
Method for manufacturing a transparent element with invisible electrodes
A conductive pattern, made of a transparent conductive oxide, such as ITO including electrodes ( 2 ) and conductive paths ( 4 ) is formed on one face of a transparent substrate ( 3 ) made of...
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7244679 |
Methods of forming silicon quantum dots and methods of fabricating semiconductor memory devices using the same
Techiques for forming a silicon quantum dot, which can be applied to the formation of a semiconductor memory device, are disclosed. The techniques may include depositing a first dielectric layer on...
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7244635 |
Semiconductor device and method of manufacturing the same
There are included a semiconductor substrate provided with a desirable element region, an electrode pad formed to come in contact with a surface of the semiconductor substrate or a wiring layer...
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7232762 |
Method for forming an improved low power SRAM contact
A method of forming contact openings in a semiconductor device including providing a semiconducting substrate; forming an etch stop layer on said semiconducting substrate; forming a dielectric...
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7226873 |
Method of improving via filling uniformity in isolated and dense via-pattern regions
An isotropic-diffusion filling method uses a thermal process on a result structure comprising a photoresist layer and an organic material layer to create a cross-linking layer there between, which...
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7226869 |
Methods for protecting silicon or silicon carbide electrode surfaces from morphological modification during plasma etch processing
Methods for forming a protective polymeric coating on a silicon or silicon-carbide electrode of a plasma processing chamber are provided. The polymeric coating provides protection to the underlying...
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7223701 |
In-situ sequential high density plasma deposition and etch processing for gap fill
During microelectronic processing of a substrate, a gap on the substrate surface may be filled with a material by alternating deposition and etch processes while the substrate remains in the same...
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7223657 |
Methods of fabricating flash memory devices with floating gates that have reduced seams
Methods of fabricating a floating gate of a flash memory cell are provided in which a first polysilicon layer is formed between first and second isolation layers. An upper region of the first...
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7214629 |
Strain-silicon CMOS with dual-stressed film
A semiconductor device has an NMOS portion and a PMOS portion. A first stress layer overlies a first channel to provide a first stress type to the channel and a first modified stress layer is...
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7205241 |
Method for manufacturing semiconductor device with contact body extended in direction of bit line
Methods for manufacturing semiconductor devices with contact bodies extended in a direction of a bit line to increase the contact area between a contact body and a storage electrode is provided. In...
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7205240 |
HDP-CVD multistep gapfill process
A gapfill process is provided using cycling of HDP-CVD deposition, etching, and deposition step. The fluent gas during the first deposition step includes an inert gas such as He, but includes H 2 ...
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7202171 |
Method for forming a contact opening in a semiconductor device
A method of forming a self-aligned contact opening in an insulative layer formed over a substrate in a semiconductor device involves etching the insulative layer with at least one fluorocarbon and...
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7202172 |
Microelectronic device having disposable spacer
A method of manufacturing a microelectronic device comprising forming a patterned feature over a substrate and employing a fluorine-containing plasma source to deposit a conformal polymer layer...
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7202148 |
Method utilizing compensation features in semiconductor processing
A photolithography and etch process sequence includes a photomask having a pattern with compensation features that alleviate patterning variations due to the proximity effect and depth of focus...
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7202173 |
Systems and methods for electrical contacts to arrays of vertically aligned nanorods
Systems and methods may provide electrical contacts to an array of substantially vertically aligned nanorods. The nanorod array may be fabricated on top of a conducting layer that serves as a...
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7199057 |
Method of eliminating boron contamination in annealed wafer
A method by which a silicon wafer is prevented from increasing boron concentration near the surface and difference in the boron concentration does not arise between the surface of the annealed...
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7195983 |
Programming, erasing, and reading structure for an NVM cell
A non-volatile memory (NVM) has a silicon germanium (SiGe) drain and a silicon carbon (SiC) source. The source being SiC provides for a stress on the channel that improves N channel mobility. The...
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7192884 |
Method for manufacturing semiconductor laser device
Disclosed is a method for manufacturing a semiconductor laser device, comprising the steps of: (a) forming a first conductive-type clad layer, an active layer, and a second conductive-type clad...
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7183198 |
Method for forming a hardmask employing multiple independently formed layers of a capping material to reduce pinholes
A bi-layer BARC/hardmask structure includes a layer of amorphous carbon and two or more distinct and independently formed layers of a PECVD material such as SiON formed on the amorphous carbon...
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7183227 |
Use of enhanced turbomolecular pump for gapfill deposition using high flows of low-mass fluent gas
High flows of low-mass fluent gases are used in an HDP-CVD process for gapfill deposition of a silicon oxide film. An enhanced turbomolecular pump that provides a large compression ratio for such...
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7183214 |
High-density plasma (HDP) chemical vapor deposition (CVD) methods and methods of fabricating semiconductor devices employing the same
In one embodiment, a semiconductor substrate is placed into a process chamber. A gas mixture including a silicon-containing gas, a fluorine-containing gas, an inert gas, and an oxygen gas is...
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7179745 |
Method for offsetting a silicide process from a gate electrode of a semiconductor device
A method for offsetting silicide on a semiconductor device having a polysilicon gate electrode, source and drain regions in a substrate, and source and drain extensions in the substrate, employs a...
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7176130 |
Plasma treatment for surface of semiconductor device
A method for forming a semiconductor device ( 10 ) includes forming an organic anti-reflective coating (OARC) layer ( 18 ) over the semiconductor device ( 10 ). A tetra-ethyl-ortho-silicate (TEOS)...
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7176136 |
Semiconductor device fabrication method
The semiconductor device fabrication method comprises the step of forming a conducting film 22 by CVD, so as to cover a first surface and a second surface of a silicon substrate 10 ; the step of...
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7176069 |
Manufacture method of display device
It is an object of the present invention to reduce the consumption of materials for manufacturing a display device, simplify the manufacturing process and the apparatus used for it, and lower the...
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7166232 |
Method for producing a solid body including a microstructure
According to a method for producing a solid body ( 1 ) including a microstructure ( 2 ), the surface of a substrate ( 3 ) is provided with a masking layer ( 6 ) that is impermeable to a substance...
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7165566 |
Method of forming a microstructure using maskless lithography
A method is provided for fabricating a microstructure using maskless lithography. A first layer is provided in a spaced relationship to a base layer so as to define a construction cavity...
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7163896 |
Biased H2 etch process in deposition-etch-deposition gap fill
Biased plasma etch processes incorporating H 2 etch chemistries. In particular, high density plasma chemical vapor etch-enhanced (deposition-etch-deposition) gap fill processes incorporating etch...
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7161229 |
Minimizing end boundary resistance in a programmable resistor of an integrated circuit
A programmable resistor includes a variety of taps. Selection of any of a variety of tap combinations establishes a path through which current will flow, thus, setting the resistance value of the...
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7157123 |
Plasma-enhanced film deposition
Methods and equipment for depositing films. In certain embodiments, there is provided a deposition chamber having a substrate-coating region and an electrode-cleaning region. In these embodiments,...
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7157415 |
Post etch cleaning composition for dual damascene system
A new cleaning chemistry based on a choline compound, such as choline hydroxide, is provided in order to address the problem of dual damascene fabrication. An etch stop inorganic layer at the...
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7157377 |
Method of making a semiconductor device using treated photoresist
A semiconductor device is made by patterning a conductive layer for forming gates of transistors. The process for forming the gates has a step of patterning photoresist that overlies the conductive...
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7157331 |
Ultraviolet blocking layer
Methods and apparatuses are disclosed relating to blocking ultraviolet electromagnetic radiation from a semiconductor. Ultraviolet electromagnetic radiation, such as ultraviolet electromagnetic...
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7144520 |
Etching method and apparatus
An etching apparatus comprises a workpiece holder ( 21 ) for holding a workpiece (X), a plasma generator ( 10, 20 ) for generating a plasma ( 30 ) in a vacuum chamber ( 3 ), an orifice electrode (...
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7144799 |
Method for pre-retaining CB opening
Disclosed is a method for pre-retaining CB opening in a DRAM manufacture process, wherein a CB opening is filed with a photo-resist layer and an LPD oxidation layer that is filled at room...
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7135400 |
Damascene process capable of avoiding via resist poisoning
A method for avoiding resist poisoning during a damascene process is disclosed. A semiconductor substrate is provided with a low-k dielectric layer (k≦2.9) thereon, a SiC layer over the low-k...
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7129186 |
Oxidation method and oxidation system
An oxidation method is capable of forming oxide films in an improved interfilm thickness uniformity. The oxidation method includes the steps of supplying an oxidizing gas and a reducing gas into a...
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