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5431778 |
Dry etch method using non-halocarbon source gases
A layer of material (14) comprising silicon, such as an SiO 2 layer, overlying a silicon substrate (12) of a semiconductor device (10), is dry etched without the need for traditional halocarbon...
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5425846 |
Removal of substrate perimeter material
Perimeter material is removed from substrates by stacking the substrates and subjecting them to a plasma etch. In an exemplary application, the perimeter of a silicon wafer dielectric cap...
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5426073 |
Method of fabricating semiconductor devices using an intermediate grinding step
In wafer processes, after at least one layer which constitutes a structural member of a functional semiconductor element is formed on a semiconductor wafer, a brittle, excessive deposition on an...
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5425843 |
Process for semiconductor device etch damage reduction using hydrogen-containing plasma
A multi-layer structure, typically semiconductor device, is etched according to a process of the present invention, and meets the above-described existing needs by focusing on the post-etch...
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5425842 |
Method of manufacturing a semiconductor device using a chemical vapour deposition process with plasma cleaning of the reactor chamber
A method of manufacturing a semiconductor device includes the step of providing a reaction chamber (3) in which a layer of material (2) is deposited on a semiconductor slice (1) which is placed on...
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5419807 |
Method of providing electrical interconnect between two layers within a silicon substrate, semiconductor apparatus, and method of forming apparatus for testing semiconductor circuitry for operability
A method is disclosed of forming a high elevation area and a low elevation area in a substrate and of electrically interconnecting the high elevation area and the low elevation area. The method...
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5420056 |
Junction contact process and structure for semiconductor technologies
A device and method for forming an improved junction contact in a semiconductor device (10). A portion of an interlevel dielectric layer (28) is etched away to expose a surface of at least one...
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5407867 |
Method of forming a thin film on surface of semiconductor substrate
A method of and an apparatus for removing a naturally grown oxide film and contaminants on the surface of a semiconductor substrate and then forming a thin film on the cleaned surface. The...
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5405492 |
Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment
A multi-switch processing methodology and a multi-channel time-division plasma chopping device (10) for in-situ plasma-assisted semiconductor wafer processing associated with a plasma and/or...
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5403436 |
Plasma treating method using hydrogen gas
A plasma treating method subjects an object surface to a plasma treating within a chamber. First, first and second gasses are supplied into the chamber, where the first gas includes hydrogen...
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5401357 |
Dry etching method
A method may be used to dry etch a sample including a plurality of regions different from each other in the photo-absorption of a light having a specified wavelength using an etching gas plasma....
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5401356 |
Method and equipment for plasma processing
The amount of dust particles deposited on a semiconductor wafer during plasma etching or CVD in manufacturing a semiconductor integrated circuit is decreased by second plasma generating electrode...
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5385636 |
Method of forming a metal contact on a projection on a semiconductor substrate
A metal contact is formed by etching a metal film that is locally protected by a spot of photosensitive resin. Thereafter the resin is caused to flow in the presence of vapor of a solvent for the...
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5384008 |
Process and apparatus for full wafer deposition
A process and apparatus is described for depositing a layer of material over the entire frontside surface of a semiconductor wafer without leaving residues on the backside of said wafer. A...
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5380399 |
Method of treating semiconductor substrates
To heat treat a semiconductor substrate without forming an oxide film on the surface thereof, the method of heat treating a semiconductor substrate, comprises: a step 1 of carrying a semiconductor...
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5376223 |
Plasma etch process
Method employing low pressure plasma having high electron density for rapid oxide etching employing hydrogen and argon and specific electron clyclotron resonance (ECR) operating parameters in an...
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5366934 |
Method for sulfide surface passivation
A purely chemical method for forming a layer of insoluble sulfides on semiconductor surfaces in order to passivate their surfaces and more particularly to a method of forming a layer of insoluble...
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5350491 |
Oxide removal method for improvement of subsequently grown oxides for a twin-tub CMOS process
A method is disclosed for removing oxide from the surface of a semiconductor body having a thick oxide and an adjoining thin oxide, without subjecting the surface to significant over-etching and...
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5350492 |
Oxide removal method for improvement of subsequently grown oxides
A method is disclosed for removing oxide from the surface of a semiconductor body having a thick oxide and an adjoining nitride-covered thin oxide, without subjecting the surface to significant...
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5346586 |
Method for selectively etching polysilicon to gate oxide using an insitu ozone photoresist strip
In semiconductor manufacture, a method of etching a polysilicon layer to a gate oxide in a semiconductor structure is provided. The method is performed insitu in a plasma etch chamber. Initially,...
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5344522 |
Pattern forming process and process for preparing semiconductor device utilizing said pattern forming process
A process for forming an etching pattern, which includes selectively irradiating a light to a clean surface of a material to be worked by etching so as to form radicals from a photoradical forming...
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5342808 |
Aperture size control for etched vias and metal contacts
A method for reduction and control of the size of etched apertures and vias for integrated circuit devices. A first aperture having a horizontal dimension greater than a desired aperture dimension...
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5332697 |
Formation of silicon nitride by nitridation of porous silicon
Low residual stress, stoichiometric or near stoichiometric, silicon nitride and silicon carbide films with thicknesses of one micron or greater are produced by reacting porous silicon with a...
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5330616 |
Electric device provided with carbon pattern structure and manufacturing method for the same
An improved semiconductor device and manufacturing method for the same is described. The device is provided with an interleaved carbon pattern. The heat produced in the semi conductor device can be...
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5328871 |
Manufacturing process for semiconductor device
A manufacturing process for a semiconductor device comprising the following steps: to spin-coat by Spin-on method a solution for forming a SOG film on a wafer having a device formed on the surface...
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5316640 |
Fabricating method of micro lens
A testing sample is formed in a three-story structure consisting of a photo-resist 13, a silicon dioxide film 12, and a GaAs substrate 11. The pattern of the photo-resist 13 is transferred onto the...
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5306672 |
Method of manufacturing a semiconductor device wherein natural oxide film is removed from the surface of silicon substrate with HF gas
A method for forming a gate oxide film of a high reliability and a superior performance applicable to a very-large-scale integrated circuit and a manufacturing equipment for the same are disclosed....
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5302241 |
Post etching treatment of semiconductor devices
According to the process of this invention, after the etching of a semiconductor device in an etching area is completed a reactive chemical composition is typically formed on the semiconductor...
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5294572 |
Method and apparatus for depositing a layer on a substrate
Method and apparatus for the batchwise simultaneous treatment of several substrates by chemical vapor deposition. The method is carried out in a closed system and before the deposition treatment,...
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5284805 |
Rapid-switching rotating disk reactor
A rapid switching rotating disk reactor has an elongated injector for injecting an inert gas into the chamber of a rotating disk reactor. The nozzle of the injector is proximate to the center of...
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5283205 |
Method for manufacturing a semiconductor device on a substrate having an anisotropic expansion/contraction characteristic
A method for manufacturing a semiconductor device which allows to form a semiconductor device on an insulating amorphous material or an insulating crystallized glass in high precision alignment is...
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5275692 |
Method for fabricating integrated circuits
The present invention features new etchants to be utilized in the etching, depositing and growth processes for fabricating integrated circuits. The etchants contain a new family of compounds...
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5269879 |
Method of etching vias without sputtering of underlying electrically conductive layer
A process for etching of silicon oxide/nitride such as silicon dioxide, silicon nitride or oxynitride. The process includes etching a silicon oxide/nitride layer to expose an underlying...
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5259926 |
Method of manufacturing a thin-film pattern on a substrate
Disclosed is an improvement in a thin-film pattern manufacturing method which includes the steps of providing a thin film on a substrate, forming a mask having a desired pattern on the thin film,...
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5229320 |
Method for forming quantum dots
Disclosed is a method which enabled the precise formation of a group of quantum dots. A device which functions on the principle of a transmission type electron microscope is used to produce a beam...
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5229334 |
Method of forming a gate insulating film involving a step of cleaning using an ammonia-peroxide solution
A method of producing a semiconductor device which comprises; a first cleaning step of cleaning the surface of Si of a semiconductor device having an Si base or an Si thin film as a substrate (1)...
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5223443 |
Method for determining wafer cleanliness
An embodiment of the present invention is a method for determining the cleanliness of a semiconductor wafer initially deposited with polysilicon, patterned with photoresist, processed, and then...
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5213996 |
Method and apparatus for forming interconnection pattern and semiconductor device having such interconnection pattern
Disclosed is a method of forming an interconnection pattern which causes no disconnection even when making contact with water in the atmosphere. An interconnection layer is formed on a...
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5211987 |
Method and apparatus for forming refractory metal films
A method for improving the adhesion between a refractory metal film and a silicon substrate is disclosed, which comprises depositing the refractory metal film on the silicon substrate at a first...
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5208066 |
Process of forming a patterned polyimide film and articles including such a film
A process of forming a patterned polyimide film includes the step of conversion of a polyimide precursor into polyimide. The improvement is imidizing the precursor by means of a chemical imidizing...
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5200347 |
Method for improving the radiation hardness of an integrated circuit bipolar transistor
A method is provided for use with an integrated circuit which includes a npn bipolar transistor on which a variable thickness oxide layer has been formed, the method for improving the radiation...
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5196376 |
Laser lithography for integrated circuit and integrated circuit interconnect manufacture
A laser lithography process for semiconductor interconnect and semiconductor manufacture having the advantages of non-contact printing processes and being much faster than prior art laser...
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5188705 |
Method of semiconductor device manufacture
Semiconductor devices are modified and/or repaired by gas enhanced physical sputtering. A focused ion beam is scanned over an area to be removed while iodine vapor is directed toward the same area....
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5188986 |
Hydrogen peroxide in basic solution to clean polycrystalline silicon after phosphorous diffusion
The method for providing a cleaned doped polycrystalline silicon surface involves providing a polycrystalline silicon body. The body is uniformly doped with a phosphorous impurity from a...
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5177031 |
Method of passivating etched mirror facets of semiconductor laser diodes
A method of passivating etched mirror facets of semiconductor laser diodes which enhances device reliability. The etched mirror facet is first subjected to a weet-etch process to substantially...
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5167762 |
Anisotropic etch method
A method to anisotropically etch an oxide/poly/oxide or an oxide/poly/oxide sandwich structure on a silicon wafer substrate in situ, that is, using a single parallel plate plasma reactor chamber...
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5160404 |
Method of removing a patterned multilevel resist from a surface layer on a substrate
A method for removing a patterned multilevel resist formed on a substrate where layer of a substrate, the multilevel resist has a lower resist layer and an upper resist layer formed on the lower...
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5158644 |
Reactor chamber self-cleaning process
A reactor chamber self-cleaning process is disclosed which uses a fluorocarbon-containing gas and, preferably, C 2 F 6 in combination with oxygen. The two-step process involves, first, a...
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5147823 |
Method for forming an ultrafine metal pattern using an electron beam
In a method for forming a pattern, by selectively irradiating a charged particle beam onto a substrate in an atmosphere containing a raw material gas, a resist pattern comprising a material which...
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5139606 |
Laser bilayer etching of GaAs surfaces
A method of etching the surface of a substrate in a closed environment including the steps of contacting the surface of the substrate with a molecular chlorine etching gas, allowing a passivation...
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