|
Match
|
Document |
Document Title |
|
|
5770000 |
Cleaning system and method
An improved cleaning system is provided for removing impurities from a material to be cleaned. The system includes two electrodes, a positive electrode ("anode") on one side, near to or in contact...
|
|
|
5766970 |
Method of manufacturing a twin well semiconductor device with improved planarity
A method for manufacturing semiconductor devices having a twin well structure in which the N-well and P-well regions of the substrate receive differential processing to set the final planarity of...
|
|
|
5766492 |
Method of metal-plating electrode portions of printed-wiring board
A method of metal-plating electrode portions of a printed-wiring board includes copper-plating the overall surface of the printed-wiring board on which an electric circuit has been formed, forming...
|
|
|
5766691 |
Process for manufacturing a high heat density transfer device
Heat transfer device (30) dissipates and removes heat energy from a heat source and delivers the heat energy to a heat sink. Heat transfer device (30) includes diamond substrate (32) for receiving...
|
|
|
5766499 |
Method of making a circuitized substrate
A method of making a circuitized substrate wherein a dielectric layer is provided having a first layer of metallic material thereon. A first metallic member is formed on the dielectric's metallic...
|
|
|
5760435 |
Use of spacers as floating gates in EEPROM with doubled storage efficiency
A method of forming a high density cell in electrically erasable and programmable read only memory (EEPROM) is disclosed. The doubling efficiency is achieved through providing two floating gates in...
|
|
|
5759919 |
Method for reducing gate oxide damages during gate electrode plasma etching
A method of forming a gate on a silicon substrate with a preformed film of gate oxide. A polysilicon layer is formed on the gate oxide. A slit is then formed in a predetermined area of the...
|
|
|
5741626 |
Method for forming a dielectric tantalum nitride layer as an anti-reflective coating (ARC)
The present invention provides an anti-reflective Ta 3 N 5 coating which can be used in a dual damascene structure and for I line or G line lithographies. In addition, the Ta 3 N 5 coating may...
|
|
|
5736462 |
Method of etching back layer on substrate
An intermediate layer is formed on a portion which becomes a projecting portion of a step difference formed on a semiconductor substrate, a layer to be polished having a slower polishing rate than...
|
|
|
5733468 |
Pattern plating method for fabricating printed circuit boards
A pattern plating method for fabricating printed circuit boards begins by bonding a thin layer of copper (e.g., copper foil) to the surface of the board. A photoresist layer is laminated over the...
|
|
|
5731243 |
Method of cleaning residue on a semiconductor wafer bonding pad
A method for backside grinding a semiconductor wafer and forming a contamination free bonding pad connection. The method comprises forming a passivation layer over a metal layer. Applying a...
|
|
|
5723383 |
Semiconductor substrate treatment method
According to a semiconductor substrate treatment method, a surface or vicinity of a semiconductor substrate is deactivated by exposing the semiconductor substrate to a plasma atmosphere in which a...
|
|
|
5714039 |
Method for making sub-lithographic images by etching the intersection of two spacers
A method of forming a sub-lithographic image formed by the intersection of two spacers. A substrate with a first pattern of selectively etchable material with sidewalls that are substantially...
|
|
|
5714037 |
Method of improving adhesion between thin films
Methods for improving adhesion between various materials utilized in the fabrication of integrated circuits. A first method relates to improving adhesion between a silicon nitride layer and a...
|
|
|
5705025 |
Method for dry etching of a semiconductor substrate
A method for dry etching of a semiconductor substrate includes producing convex structures on a surface of a semiconductor wafer by using a suitable masking and a suitable etchant. A thick...
|
|
|
5702566 |
Conductive photoresist to mitigate antenna effect
During gas plasma etching, trapped charge from the plasma can be concentrated in semiconductor devices through the conductive portions of an integrated circuit, leading to their damage. This is...
|
|
|
5688365 |
Method of making semiconductor device
This invention provides a method for making a semiconductor device. The method applies an uniform thickness of an Anti-Reflection Coat (ARC) to improve the dimensional controllability of a resist...
|
|
|
5685949 |
Plasma treatment apparatus and method
A plasma treatment apparatus for plasma treating an object to be treated or workpiece by exposure to ions, free radicals and activated gas species generated by a plasma discharge includes a...
|
|
|
5674356 |
Method for forming a semiconductor device in which an anti reflective layer is formed by varying the composition thereof
A method for producing a semiconductor device in which dry etching properties are rendered compatible with satisfactory anti-reflection characteristics in far-infrared lithography. An...
|
|
|
5674409 |
Nanolithographic method of forming fine lines
A nanolithographic method for forming fine features is disclosed. A carrier layer, such as a photoresist, is deposited on a substrate. A relatively large pattern is imposed on the carrier layer by...
|
|
|
5665200 |
Substrate processing method and substrate processing apparatus
The present invention provides a substrate processing method including the coating step of coating a processing liquid on an object to be processed in a first processing unit of a processing...
|
|
|
5652175 |
Method for manufacturing a fuse structure
A fuse structure is described in which a metallic frame is inserted between the insulation layers, through which the fuse window passes, and the final passivation layer. This frame is used as a...
|
|
|
5643834 |
Process for manufacturing a semiconductor substrate comprising laminated copper, silicon oxide and silicon nitride layers
A process for manufacturing a plastic package type semiconductor device composed of a rolled metal substrate made of copper or copper alloy and an insulating film formed on the surface of the...
|
|
|
5639341 |
Dry etching with less particles
Sticking layer forming material is provided so as to be exposed to plasma, partially on an anti-deposition plate mounted on the inner wall of a process chamber of an ECR (or microwave) plasma...
|
|
|
5628869 |
Plasma enhanced chemical vapor reactor with shaped electrodes
A semiconductor integrated circuit is made by a process including the formation on a surface of a semiconductor integrated circuit processing wafer of a layer of material applied to the wafer by...
|
|
|
5610104 |
Method of providing a mark for identification on a silicon surface
The present invention concerns a method for making an identification mark on a silicon surface. In a preferred embodiment, the identification mark formed on the silicon surface does not...
|
|
|
5609772 |
Cube maskless lead open process using chemical mechanical polish/lead-tip expose process
A semi-conductor device having a conductive lead with an exposed tip disposed within a first insulative material, which is in turn disposed between insulated first and second integrated circuit...
|
|
|
5605602 |
Method and device for removing a thin film from a wafer backside surface
A method and device is provided for removing a thin film from a wafer backside surface. The method and device advantageously removes the thin film without using photoresist masking material or the...
|
|
|
5604154 |
Method of manufacturing coulamb blockade element using thermal oxidation
A Coulomb-blockade element includes a silicon layer formed on a substrate through an insulating film. The silicon layer includes a narrow wire portion and first and second electrode portions. The...
|
|
|
5601686 |
Wafer transport method
A wafer transport method including the steps of preparing a semiconductor process equipment having a transport chamber, a process chamber, an interface means for connecting the transport chamber to...
|
|
|
5599748 |
Method of passivating group III-V surfaces
A method of passivating a surface of a Group III-V compound substrate comprising exposing the surface to a solution comprising P 2 S 5 , S and (NH 4 ) 2 S for a time sufficient to prevent...
|
|
|
5593813 |
Method for forming submicroscopic patterns
A method for forming submicroscopic patterns of a semiconductor device, which comprises: coating a photoresist film on a lower layer to be patterned; primarily exposing the photoresist film through...
|
|
|
RE35420 |
Method of increasing capacitance by surface roughening in semiconductor wafer processing
A method of increasing capacitance by surface roughening in semiconductor wafer processing includes the following steps: a) applying a first layer of material atop a substrate thereby defining an...
|
|
|
5589422 |
Controlled, gas phase process for removal of trace metal contamination and for removal of a semiconductor layer
A ultra-clean, ULSI-supportable process is described for cleaning and etching very thin layers of a semiconductor surface in a gaseous ambient at approximately room temperature. An oxidized surface...
|
|
|
5567659 |
Method of etching patterns in III-V material with accurate depth control
A method of accurately controlling the depth of etched gratings in uniform or layered quaternary III-V material. A native oxide is selectively grown on the area of the quaternary to be patterned...
|
|
|
5565370 |
Method of enhancing the current gain of bipolar junction transistors
The present invention teaches a method and structure of enhancing the current gain characteristics of a bipolar junction transistor using a semiconductor substrate comprising a base, an emitter and...
|
|
|
5561076 |
Method of fabricating an isolation region for a semiconductor device using liquid phase deposition
The invention provides a method of fabricating a semiconductor device on an SOI substrate having a single crystal silicon substrate, a silicon dioxide film laid on top of the silicon substrate and...
|
|
|
5550007 |
Surface-imaging technique for lithographic processes for device fabrication
A surface-imaging technique for lithographic processes is disclosed. The lithographic processes are used to manufacture integrated circuit devices. An image is produced on a resist that is applied...
|
|
|
5545289 |
Passivating, stripping and corrosion inhibition of semiconductor substrates
A process for passivating, and optionally stripping and inhibiting corrosion of an etched substrate (20), is described. In the process, a substrate (20) having etchant byproducts (24) thereon, is...
|
|
|
5523261 |
Method of cleaning high density inductively coupled plasma chamber using capacitive coupling
An inductively coupled plasma chamber having a capacitor electrode during cleaning of the plasma chamber.
|
|
|
5522957 |
Method for leak detection in etching chambers
A method and apparatus for detecting the presence of gaseous impurities, notably oxygen, in a gas mixture that flows over an IC wafer in an etcher during the etching process. The method is based...
|
|
|
5506172 |
Semiconductor processing method of forming an electrical interconnection between an outer layer and an inner layer
A semiconductor processing method includes: a) providing a substrate having a base region to which electrical connection is to be made; b) providing a first layer of a conductive first material; c)...
|
|
|
5502008 |
Method for forming metal plug and/or wiring metal layer
A method of forming a metal plug, including a step of flattening by polishing the surface of a contact plug which is formed by etching back a metal layer, for example, a deposited layer of Blk-W on...
|
|
|
5491112 |
Method and arrangement for treating silicon plates
A method for treating a silicon plate, a so-called wafer, in a cold-wall reactor when using the so-called CVD-technique in order, among other things, to deposit substances on the silicon plate by...
|
|
|
5486267 |
Method for applying photoresist
The invention provides a method for substrate preparation prior to applying photoresist to the substrate. A substrate, such as a TEOS-based silicon dioxide or silicon nitride film, is selected and...
|
|
|
5484687 |
Polysilphenylenesiloxane, production process thereof, and resist material and semiconductor device formed thereof
Novel polysilphenylenesiloxanes having a three-dimensional mesh structure of silphenylenesiloxane core surrounded by triorganosilyl groups, which have a good sensitivity to ionizing radiations such...
|
|
|
5474641 |
Processing method and apparatus thereof
The present invention relates to a processing chamber that processes an object to be processed in an atmosphere of a processing gas. The processing chamber is provided with a mounting stand having...
|
|
|
5468685 |
Method for producing a semiconductor integrated circuit
A semiconductor integrated circuit includes an interlayer insulating film in which vacancies are evenly scattered. In this structure, the effective dielectric constant of the insulating film is...
|
|
|
5454915 |
Method of fabricating porous silicon carbide (SiC)
Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described...
|
|
|
5439847 |
Integrated circuit fabrication with a raised feature as mask
A method for etching metal conductors and stacks of conductors is disclosed. A doped silicon dioxide layer is deposited upon a metal or stack of conductive layers to be etched. A silicon dioxide...
|