|
Match
|
Document |
Document Title |
|
|
7629672 |
Semiconductor devices and manufacturing method thereof
A semiconductor device is provided with a semiconductor substrate having circuit elements formed therein, and an insulating protective film formed on the semiconductor substrate. Hydroxyl groups...
|
|
|
7629258 |
Method for one-to-one polishing of silicon nitride and silicon oxide
The present invention provides a method of removing silicon nitride at about the same removal rate as silicon dioxide by CMP. The method utilizes a polishing slurry that includes colloidal silica...
|
|
|
7611552 |
Semiconductor polishing composition
A semiconductor polishing composition is disclosed. The composition includes fumed silica. The semiconductor polishing composition is an aqueous dispersion solution of fumed silica. Further, the...
|
|
|
7601273 |
Polishing slurry composition and method of using the same
A polishing slurry composition including an abrasive, a pH-adjusting agent, a water-soluble thickening agent, and a chelating agent, wherein the chelating agent includes at least one of an acetate...
|
|
|
7597729 |
Polishing composition and polishing method using the same
A polishing composition contains an abrasive such as colloidal silica, at least one kind of compound selected from imidazole and an imidazole derivative, and water. The polishing composition...
|
|
|
7592266 |
Removing solution, cleaning method for semiconductor substrate, and process for production of semiconductor device
The removing solution containing a cerium (IV) nitrate salt, periodic acid or a hypochlorite can be applied to metals containing copper, silver or palladium and also to metals containing other...
|
|
|
7589052 |
Slurry composition and method for chemical mechanical polishing of copper integrated with tungsten based barrier metals
The present invention is related to a slurry composition for polishing copper integrated with tungsten containing barrier layers and its use in a CMP method. The present invention is also related...
|
|
|
7585341 |
Polishing material comprising diamond clusters
Diamond clusters are used as a polishing material of free abrading particles, each being a combination of artificial diamond particles having primary particle diameters of 20 nm or less and...
|
|
|
7582564 |
Process and composition for conductive material removal by electrochemical mechanical polishing
Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In one embodiment, a composition for processing a substrate having a conductive...
|
|
|
7582127 |
Polishing composition for a tungsten-containing substrate
The invention provides a method of chemically-mechanically polishing a substrate comprising tungsten through use of a composition comprising a tungsten etchant, an inhibitor of tungsten etching,...
|
|
|
7579279 |
Method to passivate conductive surfaces during semiconductor processing
A method for processing semiconductor wafers is disclosed. A solution is applied to a semiconductor wafer to prevent dendrites and electrolytic reactions at the surface of metal interconnects. The...
|
|
|
7575615 |
Process for preparing a polishing composition
The present invention relates to a process for preparing a polishing composition comprising a colloidal silica prepared from a silicate. The first step involves adjusting the pH of a silica...
|
|
|
7569484 |
Plasma and electron beam etching device and method
Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a...
|
|
|
7563718 |
Method for forming tungsten layer of semiconductor device and method for forming tungsten wiring layer using the same
A semiconductor substrate is loaded into a reaction chamber to form a tungsten layer. A source gas including tungsten (W) is introduced into the reaction chamber to grow a crystal nucleus of the...
|
|
|
7563717 |
Method for fabricating a semiconductor device
The method includes chemical-mechanical polishing to planarize an insulating interlayer deposited on a lower pattern. The insulating interlayer is polished using a surfactant. The...
|
|
|
7563716 |
Polishing method
A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable...
|
|
|
7560384 |
Chemical mechanical polishing method
A chemical mechanical polishing method, including: chemically and mechanically polishing a polishing target surface by continuously performing a first polishing step and a second polishing step...
|
|
|
7557041 |
Apparatus and method for supplying chemicals
A chemical supplying apparatus includes first and second mixing tanks for mixing and supplying chemical slurries used in a semiconductor fabrication process. The slurries are alternately provided...
|
|
|
7553768 |
Substrate and a method for polishing a substrate
A substrate having flatness of less than 230 nmPV and surface roughness at RMS of less than 0.20 nm. is obtained by a method comprising: a process of polishing an object to be polished with a...
|
|
|
7550388 |
Polishing composition and polishing method
A polishing composition contains a deterioration inhibitor for inhibiting deterioration of polishing capability of the polishing composition, an abrasive, and water. The deterioration inhibitor is...
|
|
|
7550092 |
Chemical mechanical polishing composition
A chemical mechanical polishing composition includes: an abrasive component, a corrosion inhibitor, a surfactant, a diacid compound, a metal residue inhibitor, and water. The metal residue...
|
|
|
7550020 |
Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method
A chemical mechanical polishing aqueous dispersion comprises abrasives in a concentration of not more than 1.5% by mass, wherein the abrasives comprise ceria and have an average dispersed particle...
|
|
|
7544618 |
Two-step chemical mechanical polishing process
A chemical mechanical polishing method is disclosed. The method includes forming a film on a wafer having at least one trench structure thereon; polishing the surface of the film by providing a...
|
|
|
7538035 |
Lapping of gold pads in a liquid medium for work hardening the surface of the pads
A method for work hardening gold contact pads is disclosed. The method includes providing gold contact pads, providing lapping pads, and placing the lapping pads in contact with the gold contact...
|
|
|
7534277 |
Slurry composition for secondary polishing of silicon wafer
Disclosed is a slurry composition for secondary polishing of silicon wafers comprising: 2˜10 weight % of colloidal silica having an average particle size of 30˜80 nm; 0.5˜1.5 % by weight of...
|
|
|
7524475 |
Cerium oxide powder for one-component CMP slurry, preparation method thereof, one-component CMP slurry composition comprising the same, and method of shallow trench isolation using the slurry
A cerium oxide powder for one-component CMP slurry, which has a specific surface area of 5 m 2 /g or more, and a ratio of volume fraction of pores with a diameter of 3 nm or more to that of pores...
|
|
|
7524347 |
CMP composition comprising surfactant
The invention provides a polishing composition comprising fumed alumina, alpha alumina, silica, a nonionic surfactant, a metal chelating organic acid, and a liquid carrier. The invention further...
|
|
|
7524346 |
Compositions of chemical mechanical planarization slurries contacting noble-metal-featured substrates
A composition for chemical-mechanical planarization comprises periodic acid and an abrasive present in a combined amount sufficient to planarize a substrate surface having a feature thereon...
|
|
|
7514364 |
Hydrophilicity treatment method of a silicon wafer
In a hydrophilicity treatment method including the step of rotating, on a polishing cloth, a mirror surface of a silicon wafer subjected to mirror-polishing followed by rinsing treatment while the...
|
|
|
7514363 |
Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use
A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, benzenesulfonic acid compound, a per-compound...
|
|
|
7513920 |
Free radical-forming activator attached to solid and used to enhance CMP formulations
A CMP composition having: a fluid comprising water and at least one oxidizing compound that produces free radicals when contacted with an activator; and a plurality of particles having a surface...
|
|
|
7504699 |
Fabrication of a semiconductor device with air gaps for ultra-low capacitance interconnections
A method of forming an air gap or gaps within solid structures and specifically semiconductor structures to reduce capacitive coupling between electrical elements such as metal lines, wherein a...
|
|
|
7504337 |
IC chip uniform delayering methods
Methods of uniformly delayering an IC chip are disclosed. One embodiment includes: performing an ash on the wafer including an Al layer thereof and etching the Al layer; polishing an edge of the...
|
|
|
7501346 |
Gallium and chromium ions for oxide rate enhancement
The invention provides a chemical-mechanical polishing composition comprising silica, a compound in an amount sufficient to provide about 0.2 mM to about 10 mM of a metal cation selected from the...
|
|
|
7494929 |
Automatic gain control
Methods and apparatus for automatic gain control. A film on a substrate is polished by a chemical mechanical polisher that includes a polishing pad and an in-situ monitoring system. The polishing...
|
|
|
7485162 |
Polishing composition
A polishing composition of the present invention, to be used in polishing for forming wiring in a semiconductor device, includes: a specific surfactant; a silicon oxide; at least one selected from...
|
|
|
7481949 |
Polishing composition and rinsing composition
A polishing composition and a rinsing composition according to the present invention can effectively suppress wafer contamination caused by metal impurities. The polishing composition includes a...
|
|
|
7479455 |
Method for manufacturing semiconductor wafer
A method may involve mounting a first supporting plate on an active surface of a wafer using an adhesive. A portion of the back surface of the wafer may be backlapped. A second supporting plate may...
|
|
|
7476620 |
Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers
A chemical mechanical polishing composition contains 1) water, 2) optionally an abrasive material, 3) an oxidizer, preferably a per-type oxidizer, 4) a small amount of soluble metal-ion...
|
|
|
7459398 |
Slurry for CMP, polishing method and method of manufacturing semiconductor device
Disclosed is a CMP slurry comprising an abrasive grain, and a mixed surfactant comprising a first polyether type nonionic surfactant having an HLB value ranging from 3 to 9 at room temperature, and...
|
|
|
7456107 |
Compositions and methods for CMP of low-k-dielectric materials
The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing low-k dielectric materials. The composition comprises a particulate abrasive material, at...
|
|
|
7455791 |
Abrasives for copper CMP and methods for making
An aqueous chemical mechanical polishing slurry is provided that comprises precipitated amorphous silica abrasive particles treated with acidic aluminum. Also provided is a method of polishing an...
|
|
|
7452819 |
Chemical mechanical polishing method of organic film and method of manufacturing semiconductor device
There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the...
|
|
|
7452816 |
Semiconductor processing method and chemical mechanical polishing methods
This invention includes a chemical mechanical polishing method including providing a substrate having an organic material to be polished by chemical mechanical polishing. In one implementation, the...
|
|
|
7452815 |
Methods of forming integrated circuit devices having polished tungsten metal layers therein
Methods of forming integrated circuit devices use metal CMP slurry compositions having relatively low chemical etch rate and relatively high mechanical polishing rate characteristics. The...
|
|
|
7452813 |
Method of manufacturing semiconductor device having planarized interlayer insulating film
A method of manufacturing a semiconductor device according to the present invention, comprising the steps of: forming a first insulating film on a substrate that is provided with a structure;...
|
|
|
7449413 |
Method for effectively removing polysilicon nodule defects
According to one exemplary embodiment, a method includes a step of forming a polysilicon layer over a substrate by using a deposition process, where the deposition process causes polysilicon nodule...
|
|
|
7446046 |
Selective polish for fabricating electronic devices
A selective polish for fabricating electronic devices is disclosed. The selective polish may include the use of a slurry that facilitates the selective polish of a first component but does not...
|
|
|
7442645 |
Method of polishing a silicon-containing dielectric
The inventive method of polishing a silicon-containing dielectric layer involves the use of a chemical-mechanical polishing system comprising (a) an inorganic abrasive, (b) a polishing additive,...
|
|
|
7439174 |
Multilayer hardmask scheme for damage-free dual damascene processing of SiCOH dielectrics
Interconnect structures possessing an organosilicate glass based material for 90 nm and beyond BEOL technologies in which a multilayer hardmask using a line-first approach are described. The...
|