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8846538 Passive elements, articles, packages, semiconductor composites, and methods of manufacturing same  
Systems and methods associated with semiconductor articles are disclosed, including forming a first layer of material on a substrate, etching trenches within regions defining a passive element in...
8846534 Process for CMP with large feature size variation  
Embodiments of the present invention relate to reducing the size variation on a wafer fabrication. In some embodiments, at least a portion the backfill material over features larger than a...
8846533 Cleaning solution for substrate for semiconductor device  
A cleaning solution of the present invention contains a sodium ion, a potassium ion, an iron ion, an ammonium salt of a sulfuric ester represented by General Formula (1), and water, and each...
8846535 Method of fabricating a semiconductor device  
The present invention discloses a method for fabricating semiconductor devices. After removing excessive aluminum to form aluminum gates through a chemical mechanical planarization (CMP) process,...
8841216 Method and composition for chemical mechanical planarization of a metal  
A composition and associated method for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) are described herein which afford high and tunable rates of...
8841215 Polishing agent, compound semiconductor manufacturing method, and semiconductor device manufacturing method  
Afforded are a polishing agent, and a compound semiconductor manufacturing method and semiconductor device manufacturing method utilizing the agent, whereby the surface quality of compound...
8841197 Method for forming fin-shaped structures  
The present invention provides a method for forming a fin structure comprising the following steps: first, a multiple-layer structure is formed on a substrate; then, a sacrificial pattern is formed...
8828745 Method for manufacturing through-silicon via  
A method for manufacturing TSVs, wherein the method comprises several steps as follows: A stack structure having a substrate and an ILD layer (inter layer dielectric layer) is provided, in which an...
8828875 Method and apparatus for improving CMP planarity  
Provided is a method of planarizing a semiconductor device. A dielectric layer is formed over a substrate. A plurality of openings is formed in the dielectric layer. The openings have varying...
8828254 Plasma processing method  
A plasma processing method and a plasma processing apparatus in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing...
8828874 Chemical mechanical polishing of group III-nitride surfaces  
A method of chemically-mechanically polishing a substrate having a Group III-nitride surface includes providing a chemical-mechanical polishing slurry composition. The slurry composition includes a...
8831767 Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, or a characteristic of a polishing pad or tool  
Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, a characteristic of a polishing pad, or a characteristic of a...
8828841 Semiconductor device and method of manufacture  
A system and method for forming an isolation trench is provided. An embodiment comprises forming a trench and then lining the trench with a dielectric liner. Prior to etching the dielectric liner,...
8829483 Semiconductor device and manufacturing method thereof  
This invention discloses a semiconductor device and its manufacturing method. According to the method, a stop layer is deposited on a step-shaped bottom electrode, and then a first insulating layer...
8822339 Slurry composition for CMP, and polishing method  
The present invention relates to a CMP slurry composition comprising an abrasive particle; a dispersant; an ionic polymer additive; and a non-ionic polymer additive including a...
8822340 Abrasive compositions for chemical mechanical polishing and methods for using same  
A colloidal dispersion for chemical mechanical polishing comprising: (a) an abrasive component; and (b) from about 0.05% to about 10% by weight of the abrasive component, a water-soluble amphoteric...
8821746 Fabrication method of semiconductor device and chemical mechanical polishing apparatus  
A method of fabricating a semiconductor device includes dressing a surface of a polishing pad with a conditioning disk held by an arm while rotating a platen that holds the polishing pad in a...
8822333 Method of manufacturing a tungsten plug  
A method of manufacturing a tungsten plug is described for producing semiconductor integrated circuits. The method protects the dielectric layer from getting damaged and avoids impact from CMP...
8815723 Process for enhancing image quality of backside illuminated image sensor  
A method of forming an image sensor device includes forming a light sensing region at a front surface of a silicon substrate and a patterned metal layer there over. Thereafter, the method also...
8815110 Composition and method for polishing bulk silicon  
The invention provides a polishing composition comprising (a) silica, (b) one or more compounds that increase the removal rate of silicon, (c) one or more tetraalkylammonium salts, and (d) water,...
8808573 Compositions and methods for selective polishing of silicon nitride materials  
The present invention provides an acidic aqueous polishing composition suitable for polishing a silicon nitride-containing substrate in a chemical-mechanical polishing (CMP) process. The...
8809093 Methods for fabricating self-aligning semicondutor heterostructures using silicon nanowires  
Methods for fabricating self-aligned heterostructures and semiconductor arrangements using silicon nanowires are described.
8802538 Methods for hybrid wafer bonding  
Methods for hybrid wafer bonding. In an embodiment, a method is disclosed that includes forming a metal pad layer in a dielectric layer over at least two semiconductor substrates; performing...
8801951 Plasma processing method  
In a plasma processing method for conducting etching on an object to be processed by generating plasma from depositional gas introduced into a processing chamber and exposing the object to be...
8802569 Method of fabricating a semiconductor device  
The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a plurality of circuit devices over a substrate. The method includes forming an organic...
8796138 Through substrate vias  
Methods and apparatus for forming through-vias are presented, for example, a method for forming a via in a portion of a semiconductor wafer comprising a substrate. The method comprises forming a...
8791028 Semiconductor device and manufacturing method of semiconductor device  
According to one embodiment, a manufacturing method of a semiconductor device includes a step of forming a dummy-fin semiconductor on a semiconductor substrate; a step of forming an insulating...
8791005 Sidewalls of electroplated copper interconnects  
A structure formed in an opening having a substantially vertical sidewall defined by a non-metallic material and having a substantially horizontal bottom defined by a conductive pad, the structure...
8790527 Method and system for manufacturing tapered waveguide structures in an energy assisted magnetic recording head  
A method for providing waveguide structures for an energy assisted magnetic recording (EAMR) transducer is described. The waveguide structures have a plurality of widths. At least one waveguide...
8784159 Method for polishing semiconductor wafer  
In a method for polishing a semiconductor wafer by rotating a work carrier and a table while pressing the semiconductor wafer retained by the work carrier against a polishing cloth mounted on the...
8778803 CPM slurry for silicon film polishing and polishing method  
Disclosed is a CMP slurry for silicon film polishing, comprising abrasive grains, an oxidizing agent, a cationic surfactant, and water. This CMP slurry is suitable for the CMP step of a silicon...
8778210 Compositions and methods for the selective removal of silicon nitride  
Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same...
8778211 GST CMP slurries  
The present invention provides chemical-mechanical polishing (CMP) compositions suitable for polishing a substrate comprising a germanium-antimony-tellurium (GST) alloy. The CMP compositions of the...
8778802 Polishing method and method for fabricating semiconductor device  
A polishing method includes causing a polishing pad arranged on a turn table to rotate together with the turn table, and polishing a surface of a substrate by using the rotating polishing pad while...
8772165 Methods of manufacturing gates for preventing shorts between the gates and self-aligned contacts and semiconductor devices having the same  
A method for manufacturing a semiconductor device, comprising forming a metal gate of a transistor on a substrate by a replacement metal gate process, wherein an insulating layer is formed on the...
8765549 Capacitor for interposers and methods of manufacture thereof  
Capacitor designs for substrates, such as interposers, and methods of manufacture thereof are disclosed. In an embodiment, a capacitor is formed between a through via and a lower level...
8765608 Methods for forming trenches  
Methods for making a semiconductor device are disclosed. The method includes forming a plurality of gate stacks on a substrate, forming an etch buffer layer on the substrate, forming a dielectric...
8759172 Etch stop layer formation in metal gate process  
A method of forming a semiconductor device that includes forming a metal gate conductor of a gate structure on a channel portion of a semiconductor substrate. A gate dielectric cap is formed on the...
8758090 Polishing method and polishing device  
A polishing method includes: mounting a wafer on a fixed abrasive polishing pad located on a polishing platen; delivering a polishing slurry to the fixed abrasive polishing pad to polish the wafer;...
8759229 Method for manufacturing epitaxial wafer  
A method for manufacturing an epitaxial wafer that can reduce occurrence of a surface defect or a slip formed on an epitaxial layer is provided. The manufacturing method is characterized by...
8759218 Chemical mechanical polishing process  
A chemical mechanical polishing process includes placing a substrate on a first polishing pad of a first platen, wherein the substrate has a bulk metal layer and a barrier layer; polishing the bulk...
8748316 Method of manufacturing semiconductor device, semiconductor device, and camera module  
According to an embodiment, a method of manufacturing a semiconductor device includes polishing a peripheral portion of the semiconductor substrate, and forming a protective film to be an...
8748317 Method of manufacturing a semiconductor device including a dielectric structure  
A dielectric layer is deposited on a working surface of a substrate, wherein the dielectric layer contains or consists of a dielectric polymer. The dielectric layer is partially cured. A portion of...
8749029 Method of manufacturing a semiconductor device  
The method includes providing a semiconductor chip having a first main face and a second main face opposite the first main face. The semiconductor chip includes an electrical device adjacent to the...
8748302 Replacement gate approach for high-k metal gate stacks by using a multi-layer contact level  
In a replacement gate approach, the dielectric material for laterally encapsulating the gate electrode structures may be provided in the form of a first interlayer dielectric material having...
8747687 Aqueous polishing agent comprising solid polymer particles and two complexing agents and its use in a process for polishing patterned and unstructured metal surfaces  
An aqueous CMP agent, comprising (A) solid polymer particles interacting and forming strong complexes with the metal of the surfaces to be polished; (B) a dissolved organic non-polymeric compound...
8740670 Sapphire substrates and methods of making same  
A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having...
8741161 Method of manufacturing semiconductor device  
According to one embodiment, a method of manufacturing a semiconductor device, the method includes forming a pillar on a base layer, forming a insulating layer on the base layer to cover the pillar...
8734665 Slurry for chemical-mechanical polishing of copper and use thereof  
A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol, a controlled amount of chloride ion source and a diluent. The composition...
8735293 Chemical mechanical polishing composition and methods relating thereto  
A method for chemical mechanical polishing of a substrate comprising a germanium-antimony-tellurium chalcogenide phase change alloy using a chemical mechanical polishing composition comprising...