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7615386 Thick oxide film for wafer backside prior to metalization loop  
A method for reducing wafer backside large particle contamination, comprising: performing front end of line processing of a memory device, depositing a thick oxide on the wafer backside so that at...
7611958 Method of making a semiconductor element  
A method of producing a capacitor that includes producing a first electrode having a first surface; forming a recess in an element, walls of the element and the first surface of the first electrode...
7611552 Semiconductor polishing composition  
A semiconductor polishing composition is disclosed. The composition includes fumed silica. The semiconductor polishing composition is an aqueous dispersion solution of fumed silica. Further, the...
7608543 Method for planarizing thin layer of semiconductor device  
A method for planarizing a layer of a semiconductor device includes depositing a high density plasma (HDP) oxide layer over a wafer to have a reflective index distribution that is inversely...
7608536 Method of manufacturing contact opening  
Disclosed is a method of manufacturing a semiconductor device, in which a high-temperature SOD (spin on dielectric) annealing process is performed to prevent a SOD crack, and a nitride film,...
7604527 Methods and systems for planarizing workpieces, e.g., microelectronic workpieces  
Planarizing workpieces, e.g., microelectronic workpieces, can employ a process indicator which is adapted to change an optical property in response to a planarizing condition. This process...
7601645 Methods for fabricating device features having small dimensions  
Methods for fabricating devices having small feature sizes are provided. In an exemplary embodiment, a method comprises forming a patterned first mask layer overlying a subject material layer and...
7601644 Method for manufacturing silicon wafers  
This silicon wafer production process comprises in the order indicated a planarization step, in which the front surface and the rear surface of a wafer are ground or lapped, a single-wafer acid...
7601643 Arrangement and method for fabricating a semiconductor wafer  
An arrangement and method for fabricating a semiconductor wafer which utilizes a nonaqueous solvent rinse is disclosed.
7601640 Method of manfacturing semiconductor device  
A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into...
7601615 Method of grinding back surface of semiconductor wafer and semiconductor wafer grinding apparatus  
A semiconductor wafer back-surface grinding method, for grinding a back surface of a semiconductor wafer, an opposed front surface of the semiconductor wafer being adhered to a support base...
7601273 Polishing slurry composition and method of using the same  
A polishing slurry composition including an abrasive, a pH-adjusting agent, a water-soluble thickening agent, and a chelating agent, wherein the chelating agent includes at least one of an acetate...
7598175 Apparatus and method for confined area planarization  
A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an...
7598098 Monitoring the reduction in thickness as material is removed from a wafer composite and test structure for monitoring removal of material  
The aim of the invention is to create a simple monitoring or testing method for monitoring a reduction in thickness as material is removed from a bonded semiconductor wafer pair, which prevents...
7597729 Polishing composition and polishing method using the same  
A polishing composition contains an abrasive such as colloidal silica, at least one kind of compound selected from imidazole and an imidazole derivative, and water. The polishing composition...
7589052 Slurry composition and method for chemical mechanical polishing of copper integrated with tungsten based barrier metals  
The present invention is related to a slurry composition for polishing copper integrated with tungsten containing barrier layers and its use in a CMP method. The present invention is also related...
7589023 Method of manufacturing semiconductor wafer  
A method of manufacturing a semiconductor wafer, comprising the step of differentiating the glossiness of a front surface from that of a rear surface of the wafer by using an abrasive cloth with a...
7585772 Process for smoothening III-N substrates  
A process for preparing smoothened III-N, in particular smoothened III-N substrate or III-N template, wherein III denotes at least one element of group III of the Periodic System, selected from Al,...
7585341 Polishing material comprising diamond clusters  
Diamond clusters are used as a polishing material of free abrading particles, each being a combination of artificial diamond particles having primary particle diameters of 20 nm or less and...
7582565 Method and apparatus for semiconductor wafer planarization  
Broadly speaking, the present invention provides a method and an apparatus for planarizing a semiconductor wafer (“wafer”). More specifically, the present invention provides for depositing a...
7582564 Process and composition for conductive material removal by electrochemical mechanical polishing  
Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In one embodiment, a composition for processing a substrate having a conductive...
7582556 Circuitry component and method for forming the same  
A circuit structure includes a semiconductor substrate, first and second metallic posts over the semiconductor substrate, an insulating layer over the semiconductor substrate and covering the first...
7582221 Wafer manufacturing method, polishing apparatus, and wafer  
The present invention provides a wafer manufacturing method and a wafer polishing apparatus which enable control of sags in a periphery of a wafer and improvement of nanotopology values thereof...
7582127 Polishing composition for a tungsten-containing substrate  
The invention provides a method of chemically-mechanically polishing a substrate comprising tungsten through use of a composition comprising a tungsten etchant, an inhibitor of tungsten etching,...
7579279 Method to passivate conductive surfaces during semiconductor processing  
A method for processing semiconductor wafers is disclosed. A solution is applied to a semiconductor wafer to prevent dendrites and electrolytic reactions at the surface of metal interconnects. The...
7575615 Process for preparing a polishing composition  
The present invention relates to a process for preparing a polishing composition comprising a colloidal silica prepared from a silicate. The first step involves adjusting the pH of a silica...
7566663 Method for manufacturing semiconductor device or semiconductor wafer using a chucking unit  
A method for manufacturing a semiconductor device or a semiconductor wafer using a chucking unit is provided to remove a slurry that adheres to the back surface of the semiconductor wafer. An edge...
7563717 Method for fabricating a semiconductor device  
The method includes chemical-mechanical polishing to planarize an insulating interlayer deposited on a lower pattern. The insulating interlayer is polished using a surfactant. The...
7563383 CMP composition with a polymer additive for polishing noble metals  
The invention provides a method of polishing a substrate comprising contacting a substrate comprising a noble metal on a surface of the substrate with a chemical-mechanical polishing system...
7562662 Cleaning solution and cleaning method of a semiconductor device  
A cleaning method for removing foreign bodies during the fabrication of semiconductor devices including treating a substrate with a cleaning solution including an oxidizer to form a chemical oxide...
7560384 Chemical mechanical polishing method  
A chemical mechanical polishing method, including: chemically and mechanically polishing a polishing target surface by continuously performing a first polishing step and a second polishing step...
7557041 Apparatus and method for supplying chemicals  
A chemical supplying apparatus includes first and second mixing tanks for mixing and supplying chemical slurries used in a semiconductor fabrication process. The slurries are alternately provided...
7556972 Detection and characterization of SiCOH-based dielectric materials during device fabrication  
Processes and apparatuses are disclosed for detecting and characterizing SiCOH-based dielectric materials during integrated circuit fabrication. The processes generally include chromatographically...
7554199 Substrate for evaluation  
The CMP technology is provided for a damascene wiring structure having a plural-layer wiring that is excellent in flatness and resolvability of Cu residue. An evaluation substrate is provided for...
7553768 Substrate and a method for polishing a substrate  
A substrate having flatness of less than 230 nmPV and surface roughness at RMS of less than 0.20 nm. is obtained by a method comprising: a process of polishing an object to be polished with a...
7553763 Salicide process utilizing a cluster ion implantation process  
A salicide process contains providing a silicon substrate that comprises at least a predetermined salicide region, performing a cluster ion implantation process to form an amorphized layer in the...
7553677 Method for manufacturing ferroelectric memory  
A method for manufacturing a ferroelectric memory includes the steps of: (a) forming a ferroelectric capacitor by sequentially laminating, on a substrate, a lower electrode, a ferroelectric layer...
7553430 Polishing slurries and methods for chemical mechanical polishing  
Aqueous polishing slurries for chemical-mechanical polishing are effective for polishing copper at high polish rates. The aqueous slurries according to the present invention may include soluble...
7550388 Polishing composition and polishing method  
A polishing composition contains a deterioration inhibitor for inhibiting deterioration of polishing capability of the polishing composition, an abrasive, and water. The deterioration inhibitor is...
7550092 Chemical mechanical polishing composition  
A chemical mechanical polishing composition includes: an abrasive component, a corrosion inhibitor, a surfactant, a diacid compound, a metal residue inhibitor, and water. The metal residue...
7550020 Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method  
A chemical mechanical polishing aqueous dispersion comprises abrasives in a concentration of not more than 1.5% by mass, wherein the abrasives comprise ceria and have an average dispersed particle...
RE40790 Method for making electrical contact with an active area through sub-micron contact openings and a semiconductor device  
A semiconducting processing method for making electrical contacts with an active area in sub-micron geometries includes: (a) providing a pair of conductive runners on a semiconductor wafer; (b)...
7544618 Two-step chemical mechanical polishing process  
A chemical mechanical polishing method is disclosed. The method includes forming a film on a wafer having at least one trench structure thereon; polishing the surface of the film by providing a...
7544606 Method to implement stress free polishing  
A method of forming a metal feature in a low-k dielectric layer is provided. The method includes forming an opening in a low-k dielectric layer, forming a metal layer having a substantially planar...
7544307 Metal polishing liquid and polishing method using it  
A metal polishing liquid which contains a compound represented by the following formula (1), an aromatic heterocyclic ring compound, and an oxidizing agent, and a chemical mechanical polishing...
7541287 Method for machining a semiconductor wafer on both sides in a carrier, carrier, and a semiconductor wafer produced by the method  
A semiconductor wafer is guided in a cutout in a carrier while a thickness of the semiconductor wafer is reduced to a target thickness by material removal from the front and back surfaces...
7540080 Method for mounting component by suction nozzle  
A method and apparatus for mounting a light emitting element, enabling positioning on an object with precision with reference to the optic axis of a light emitting element, and mounting the...
7538035 Lapping of gold pads in a liquid medium for work hardening the surface of the pads  
A method for work hardening gold contact pads is disclosed. The method includes providing gold contact pads, providing lapping pads, and placing the lapping pads in contact with the gold contact...
7534725 Advanced process control for semiconductor processing  
An advanced process control (APC) method for semiconductor fabrication is provided. A first substrate and a second substrate are provided. The first substrate and the second substrate include a...
7534364 Methods for a multilayer retaining ring  
A substrate is maintained beneath a substrate mounting surface with a retaining ring that includes a generally annular lower portion having a bottom surface for contacting the polishing surface...