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8784159 Method for polishing semiconductor wafer  
In a method for polishing a semiconductor wafer by rotating a work carrier and a table while pressing the semiconductor wafer retained by the work carrier against a polishing cloth mounted on the...
8778803 CPM slurry for silicon film polishing and polishing method  
Disclosed is a CMP slurry for silicon film polishing, comprising abrasive grains, an oxidizing agent, a cationic surfactant, and water. This CMP slurry is suitable for the CMP step of a silicon...
8778210 Compositions and methods for the selective removal of silicon nitride  
Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same...
8778211 GST CMP slurries  
The present invention provides chemical-mechanical polishing (CMP) compositions suitable for polishing a substrate comprising a germanium-antimony-tellurium (GST) alloy. The CMP compositions of the...
8778802 Polishing method and method for fabricating semiconductor device  
A polishing method includes causing a polishing pad arranged on a turn table to rotate together with the turn table, and polishing a surface of a substrate by using the rotating polishing pad while...
8772165 Methods of manufacturing gates for preventing shorts between the gates and self-aligned contacts and semiconductor devices having the same  
A method for manufacturing a semiconductor device, comprising forming a metal gate of a transistor on a substrate by a replacement metal gate process, wherein an insulating layer is formed on the...
8765549 Capacitor for interposers and methods of manufacture thereof  
Capacitor designs for substrates, such as interposers, and methods of manufacture thereof are disclosed. In an embodiment, a capacitor is formed between a through via and a lower level...
8765608 Methods for forming trenches  
Methods for making a semiconductor device are disclosed. The method includes forming a plurality of gate stacks on a substrate, forming an etch buffer layer on the substrate, forming a dielectric...
8759172 Etch stop layer formation in metal gate process  
A method of forming a semiconductor device that includes forming a metal gate conductor of a gate structure on a channel portion of a semiconductor substrate. A gate dielectric cap is formed on the...
8758090 Polishing method and polishing device  
A polishing method includes: mounting a wafer on a fixed abrasive polishing pad located on a polishing platen; delivering a polishing slurry to the fixed abrasive polishing pad to polish the wafer;...
8759229 Method for manufacturing epitaxial wafer  
A method for manufacturing an epitaxial wafer that can reduce occurrence of a surface defect or a slip formed on an epitaxial layer is provided. The manufacturing method is characterized by...
8759218 Chemical mechanical polishing process  
A chemical mechanical polishing process includes placing a substrate on a first polishing pad of a first platen, wherein the substrate has a bulk metal layer and a barrier layer; polishing the bulk...
8748316 Method of manufacturing semiconductor device, semiconductor device, and camera module  
According to an embodiment, a method of manufacturing a semiconductor device includes polishing a peripheral portion of the semiconductor substrate, and forming a protective film to be an...
8748317 Method of manufacturing a semiconductor device including a dielectric structure  
A dielectric layer is deposited on a working surface of a substrate, wherein the dielectric layer contains or consists of a dielectric polymer. The dielectric layer is partially cured. A portion of...
8749029 Method of manufacturing a semiconductor device  
The method includes providing a semiconductor chip having a first main face and a second main face opposite the first main face. The semiconductor chip includes an electrical device adjacent to the...
8748302 Replacement gate approach for high-k metal gate stacks by using a multi-layer contact level  
In a replacement gate approach, the dielectric material for laterally encapsulating the gate electrode structures may be provided in the form of a first interlayer dielectric material having...
8747687 Aqueous polishing agent comprising solid polymer particles and two complexing agents and its use in a process for polishing patterned and unstructured metal surfaces  
An aqueous CMP agent, comprising (A) solid polymer particles interacting and forming strong complexes with the metal of the surfaces to be polished; (B) a dissolved organic non-polymeric compound...
8740670 Sapphire substrates and methods of making same  
A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having...
8741161 Method of manufacturing semiconductor device  
According to one embodiment, a method of manufacturing a semiconductor device, the method includes forming a pillar on a base layer, forming a insulating layer on the base layer to cover the pillar...
8734665 Slurry for chemical-mechanical polishing of copper and use thereof  
A composition and a method for chemical mechanical polishing. The composition includes a surfactant anion an alkyl alcohol, a controlled amount of chloride ion source and a diluent. The composition...
8735293 Chemical mechanical polishing composition and methods relating thereto  
A method for chemical mechanical polishing of a substrate comprising a germanium-antimony-tellurium chalcogenide phase change alloy using a chemical mechanical polishing composition comprising...
8728949 Method for fabricating a semiconductor device  
A method for forming a semiconductor device. A substrate having thereon at least one small pattern and at least one large pattern is provided. A sacrificial layer is deposited to cover the small...
8728341 Polishing agent, concentrated one-pack type polishing agent, two-pack type polishing agent and method for polishing substrate  
A polishing agent of the invention comprises tetravalent metal hydroxide particles, a cationized polyvinyl alcohol, at least one type of saccharide selected from the group consisting of an amino...
8728942 Method for producing epitaxial silicon wafer  
Mirror-polishing a front surface of a silicon wafer using polishing liquid composed of an abrasive grain-free alkaline solution including water-soluble polymers simplifies a polishing process, thus...
8721390 Method for the double-side polishing of a semiconductor wafer  
A method for double-side polishing of a semiconductor wafer includes situating the semiconductor wafer in a cutout of a carrier that is disposed in a working gap between an upper polishing plate...
8722541 Double patterning method for semiconductor devices  
A method of fabricating a semiconductor device is disclosed. The exemplary method includes providing a substrate including a device layer and a sacrificial layer formed over the device layer and...
8722540 Controlling defects in thin wafer handling  
A method includes bonding a wafer on a carrier through an adhesive, and performing a thinning process on the wafer. After the step of performing the thinning process, a portion of the adhesive not...
8715524 Polishing liquid  
The invention provides a polishing liquid for polishing a barrier layer of a semiconductor integrated circuit, the polishing liquid comprising: a diquaternary ammonium cation; a corrosion...
8715520 Substrate processing method and storage medium  
There is provided a substrate processing method capable of etching a layer containing, at least, platinum without using a halogen gas. When etching the platinum-manganese layer on a wafer W by...
8709944 Method to alter silicide properties using GCIB treatment  
A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a...
8709278 Polishing composition  
A polishing composition that allows polishing speed to be increased and surface roughness to be reduced is provided. The polishing composition according to the present invention includes a compound...
8709915 Method of manufacturing semiconductor device  
A method of manufacturing a semiconductor device comprises: forming a protective film so as to cover at least a side edge of a substrate; forming a trench, which is annular in shape when viewed...
8709952 Etching method, etching apparatus, and computer-readable recording medium  
Provided is an etching method capable of etching even a silicon film that is included in a multi-layered structure by using a resist film or an organic film as a mask, and also capable of...
8702472 Polishing composition and polishing method using the same  
A polishing composition contains at least abrasive grains and water and is used in polishing an object to be polished. The abrasive grains are selected so as to satisfy the relationship X1×Y1≦0 an...
8703004 Method for chemical planarization and chemical planarization apparatus  
According to one embodiment, a method is disclosed for chemical planarization. The method can include forming a surface layer on a to-be-processed film having irregularity. The surface layer binds...
8703607 Method to alter silicide properties using GCIB treatment  
A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a...
8697577 Method and composition for chemical mechanical planarization of a metal or a metal alloy  
A composition and associated method for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) are described herein which afford high and tunable rates of...
8691695 CMP compositions and methods for suppressing polysilicon removal rates  
The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a silicon nitride-containing substrate while suppressing polysilicon removal from the...
8685857 Chemical mechanical polishing method of organic film and method of manufacturing semiconductor device  
There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the...
8685909 Antioxidants for post-CMP cleaning formulations  
An cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The...
8685270 Method for producing a semiconductor wafer  
A method for producing a semiconductor wafer sliced from a single crystal includes rounding an edge using a grinding disk containing abrasives with an average grain size of 20.0-60.0 μm. A first ...
8679980 Aqueous metal polishing agent comprising a polymeric abrasiv containing pendant functional groups and its use in a CMP process  
(A) solid polymer particles being finely dispersed in the aqueous phase and containing pendant functional groups (a1) capable of strongly interacting and forming strong complexes with the metal of...
8679979 Using optical metrology for within wafer feed forward process control  
A method of controlling the polishing of a substrate includes polishing a substrate on a first platen using a first set of parameters, obtaining first and second sequences of measured spectra from...
8679360 Base surface processing method and MEMS device  
A base surface processing method includes forming a protective film on a base surface; thinning a part of a base by grinding a part of the base surface; and etching a ground surface ground by the...
8673781 Plasma etching method  
The present invention relates to a plasma etching method with which a wide-gap semiconductor substrate can be etched with high accuracy. An inert gas is supplied into a processing chamber and...
8674410 Method of manufacturing metal silicide and semiconductor structure using the same  
A method of manufacturing a metal silicide is disclosed below. A substrate having a first region and a second region is proviced. A silicon layer is formed on the substrate. A planarization process...
8673783 Metal conductor chemical mechanical polish  
The present disclosure provides a method of fabricating a semiconductor device, a semiconductor device fabricated by such a method, and a chemical mechanical polishing (CMP) tool for performing...
8673770 Methods of forming conductive structures in dielectric layers on an integrated circuit device  
One method disclosed herein includes the steps of forming a ULK material layer, forming a hard mask layer above the ULK material layer, forming a patterned photoresist layer above the hard mask...
8673784 Method for producing silicon epitaxial wafer  
The method for producing a silicon epitaxial wafer according to the present invention has: a growth step F at which an epitaxial layer is grown on a silicon single crystal substrate; a first...
8673768 Fabrication method for improving surface planarity after tungsten chemical mechanical polishing  
A fabrication method for improving surface planarity after tungsten chemical mechanical polishing (W-CMP) is disclosed. The method forms contact holes and dummy patterns by performing two...