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8697577 Method and composition for chemical mechanical planarization of a metal or a metal alloy  
A composition and associated method for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) are described herein which afford high and tunable rates of...
8691695 CMP compositions and methods for suppressing polysilicon removal rates  
The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a silicon nitride-containing substrate while suppressing polysilicon removal from the...
8685857 Chemical mechanical polishing method of organic film and method of manufacturing semiconductor device  
There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the...
8685909 Antioxidants for post-CMP cleaning formulations  
An cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The...
8685270 Method for producing a semiconductor wafer  
A method for producing a semiconductor wafer sliced from a single crystal includes rounding an edge using a grinding disk containing abrasives with an average grain size of 20.0-60.0 μm. A first ...
8679980 Aqueous metal polishing agent comprising a polymeric abrasiv containing pendant functional groups and its use in a CMP process  
(A) solid polymer particles being finely dispersed in the aqueous phase and containing pendant functional groups (a1) capable of strongly interacting and forming strong complexes with the metal of...
8679979 Using optical metrology for within wafer feed forward process control  
A method of controlling the polishing of a substrate includes polishing a substrate on a first platen using a first set of parameters, obtaining first and second sequences of measured spectra from...
8679360 Base surface processing method and MEMS device  
A base surface processing method includes forming a protective film on a base surface; thinning a part of a base by grinding a part of the base surface; and etching a ground surface ground by the...
8673781 Plasma etching method  
The present invention relates to a plasma etching method with which a wide-gap semiconductor substrate can be etched with high accuracy. An inert gas is supplied into a processing chamber and...
8674410 Method of manufacturing metal silicide and semiconductor structure using the same  
A method of manufacturing a metal silicide is disclosed below. A substrate having a first region and a second region is proviced. A silicon layer is formed on the substrate. A planarization process...
8673783 Metal conductor chemical mechanical polish  
The present disclosure provides a method of fabricating a semiconductor device, a semiconductor device fabricated by such a method, and a chemical mechanical polishing (CMP) tool for performing...
8673770 Methods of forming conductive structures in dielectric layers on an integrated circuit device  
One method disclosed herein includes the steps of forming a ULK material layer, forming a hard mask layer above the ULK material layer, forming a patterned photoresist layer above the hard mask...
8673784 Method for producing silicon epitaxial wafer  
The method for producing a silicon epitaxial wafer according to the present invention has: a growth step F at which an epitaxial layer is grown on a silicon single crystal substrate; a first...
8673768 Fabrication method for improving surface planarity after tungsten chemical mechanical polishing  
A fabrication method for improving surface planarity after tungsten chemical mechanical polishing (W-CMP) is disclosed. The method forms contact holes and dummy patterns by performing two...
8669184 Method for improving flatness of a layer deposited on polycrystalline layer  
Described is a method for improving the flatness of a layer deposited on a doped polycrystalline layer, which includes reducing the grain size of the polycrystalline layer to decrease the...
8668553 Method of manufacturing semiconductor device  
A method for manufacturing a semiconductor device includes the step of polishing a conductive film formed over a semiconductor substrate. The conductive film is formed by a barrier film that is in...
8666665 Automatic initiation of reference spectra library generation for optical monitoring  
A method of generating reference spectra includes polishing a first substrate in a polishing apparatus, measuring a sequence of spectra from the first substrate during polishing with an in-situ...
8664118 Semiconductor device and method for manufacturing the same  
An object is to provide a semiconductor device having excellent characteristics, in which a channel layer includes an oxide semiconductor with high crystallinity. In addition, a semiconductor...
8665605 Substrate structure and package structure using the same  
A substrate structure and a package structure using the same are provided. The substrate structure includes a number of traces, a substrate core and a number of first metal tiles. The substrate...
8663490 Semiconductor wafer handler  
A semiconductor wafer handler comprises a ring (70) attached to a hub (80) by a plurality of spokes (90). Vacuum is applied to the surface of the semiconductor wafer through orifices (100)...
8658538 Method of fabricating memory device  
A method of fabricating a memory device includes forming a plurality of first insulative blocks and a plurality of second insulative blocks arranged in an alternating manner in a substrate, forming...
8652295 CMP tool implementing cyclic self-limiting CM process  
A chemical mechanical polishing (CMP) apparatus includes a process controller operable to execute a multi-step CMP algorithm implementing delivering a first chemical composition onto the wafer...
8647965 Radiographic image detector, method of producing the same, and protective member  
A method of producing a radiographic image detector includes: preparing a thin-film transistor substrate comprising an insulating substrate and a thin-film transistor that is disposed on a surface...
8647985 Method for polishing a substrate composed of semiconductor material  
Semiconductor material substrates are polished by a method including at least one polishing step A by means of which the substrate is polished on a polishing pad containing an abrasive material...
8647986 Semiconductor process  
A semiconductor process includes the following steps. A first gate structure and a second gate structure are formed on a substrate, wherein the top of the first gate structure includes a cap layer,...
8647987 Method for improving uniformity of chemical-mechanical planarization process  
The invention provides a method for improving uniformity of chemical-mechanical planarization process, comprising the steps of: forming features on a substrate; forming a first dielectric isolation...
8647991 Method for forming dual damascene opening  
A method for forming a dual damascene opening includes the following steps. Firstly, a first hard mask layer with a trench pattern is formed over a material layer. Then, a dielectric layer is...
8641920 Polishing composition for planarizing metal layer  
A polishing composition of the present invention at least comprises about 750 ppm to less than 5000 ppm by weight of abrasive particles, hydrogen peroxide, an accelerator, a dual-corrosion...
8637405 Silicon surface texturing method for reducing surface reflectance  
A method of texturing a surface of a crystalline silicon substrate is provided. The method includes immersing a crystalline silicon substrate into an aqueous alkaline etchant solution to form a...
8636917 Solution for forming polishing slurry, polishing slurry and related methods  
A solution for forming a polishing slurry, the polishing slurry and related methods are disclosed. The solution for forming a polishing slurry may include 1H-benzotriazole (BTA) dissolved in an...
8636913 Removing residues in magnetic head fabrication  
The present invention generally relates to a method of forming a magnetic head while ensuring residues do not negatively impact the magnetic head. In particular, when performing a RIE process to...
8637403 Locally tailoring chemical mechanical polishing (CMP) polish rate for dielectrics  
A method of manufacturing a semiconductor structure includes varying local chemical mechanical polishing (CMP) abrading rates of an insulator film by selectively varying a carbon content of the...
8637404 Metal cations for initiating polishing  
The invention provides methods for planarizing or polishing a metal surface. The method comprises a composition comprising an abrasive, cesium ions, and a liquid carrier comprising water.
8633111 Composition for polishing surfaces of silicon dioxide  
A composition for polishing surfaces comprises the following components: a) at least one inorganic abrasive component (S) comprising a lanthanide oxide,b) at least one organic dispersing-agent...
8629063 Forming features on a substrate having varying feature densities  
A method includes forming a cavity in a substrate, depositing a layer of conductive material in the cavity and over exposed portions of the substrate, removing portions of the conductive material...
8629031 Method for manufacturing SOI substrate and semiconductor device  
It is an object of the present invention to provide a method for manufacturing an SOI substrate having an SOI layer that can be used in practical applications with high yield even when a flexible...
8629064 Multiple patterning lithography using spacer and self-aligned assist patterns  
The present invention relates to lithographic apparatuses and processes, and more particularly to multiple patterning lithography for printing target patterns beyond the limits of resolution of the...
8623766 Composition and method for polishing aluminum semiconductor substrates  
The invention provides a chemical-mechanical polishing composition comprising coated α-alumina particles, an organic carboxylic acid, and water. The invention also provides a chemical-mechanical ...
8623674 Method of manufacturing liquid ejection head substrate  
A liquid ejection head substrate including a silicon substrate having a liquid supply port as hollow and slots as through holes connecting the hollow and a liquid channel arranged opposite sides of...
8623767 Method for polishing aluminum/copper and titanium in damascene structures  
The invention provides compositions and methods for planarizing or polishing a substrate. The composition comprises an abrasive consisting of alumina particles optionally treated with a polymer, an...
8623673 Structure and method for detecting defects in BEOL processing  
A test structure and method for monitoring process uniformity. Embodiments of the invention include test structures having a first metallization layer, a second metallization layer formed above the...
8617275 Polishing agent and method for polishing substrate using the polishing agent  
Disclosed is a polishing agent comprising: water; tetravalent metal hydroxide particles; and an additive, wherein the additive contains at least one of a cationic polymer and a cationic...
8617908 Method for producing a substrate including a step of thinning with stop when a porous zone is detected  
A method for producing a substrate, the method including: forming a porous zone in an inner layer of the substrate; progressively thinning a thickness of the substrate towards the inner layer...
8617994 Polishing liquid composition  
A polishing liquid composition includes composite oxide particles containing cerium and zirconium, a dispersing agent, and an aqueous medium. A powder X-ray diffraction spectrum of the composite...
8618036 Aqueous cerium-containing solution having an extended bath lifetime for removing mask material  
An aqueous solution of a cerium (IV) complex or salt having an extended lifetime is provided. In one embodiment, the extended lifetime is achieved by adding at least one booster additive to an...
8609541 Polishing slurry for metal films and polishing method  
Provided are a polishing slurry for metal films and a polishing method which restrain the generation of erosion and seams, and makes the flatness of a surface polished therewith or thereby high....
8610099 Planar resistive memory integration  
In an example, a single damascene structure is formed by, for example, providing a dielectric layer, forming a void in the dielectric layer, and forming a portion of a first two-terminal resistive...
8609441 Substrate comprising a mark  
A substrate comprises a first mark and a second mark. The first mark comprises a first pattern with at least one mark feature formed by a first material and at least one region formed by a second...
8603916 CMP techniques for overlapping layer removal  
Chemical-Mechanical Polishing can be used to planarize a semiconductor wafer having a patterned overlapping layer. Isotropic etching can remove a portion of the patterned overlapping layer to...
8603917 Method of processing a wafer  
According to embodiments of the present invention, a method of processing a wafer is provided. The wafer includes a plurality of through-wafer interconnects extending from a frontside surface of...