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8912095 Polishing method, polishing apparatus and polishing tool  
A polishing method and a polishing apparatus finish a surface of a substrate of a compound semiconductor containing an element such as Ga or the like to a desired level of flatness, so that the...
8906123 CMP slurry/method for polishing ruthenium and other films  
A method and associated composition for CMP processing of noble metal-containing substrates (such as ruthenium-containing substrates) afford both high removal rates of the noble metal and are...
8901003 Polishing method of semiconductor structure  
A polishing method of a semiconductor device is disclosed. A substrate having a first side and a second side opposite to the first side is provided. The substrate has a device layer formed on the...
8900473 Polishing solution for CMP, and method for polishing substrate using the polishing solution for CMP  
The CMP polishing liquid of the present invention contains 1,2,4-triazole, a phosphoric acid, an oxidant, and abrasive particles. The polishing method of the present invention is a substrate...
8901002 Polishing slurry for metal films and polishing method  
Provided are a polishing slurry for metal films and a polishing method which restrain the generation of erosion and seams, and makes the flatness of a surface polished therewith or thereby high....
8900335 CMP polishing slurry and method of polishing substrate  
A CMP polishing slurry of the present invention contains cerium oxide particles, water, and a polymer of at least one of a methacrylic acid and the salt thereof, and/or a polymer of at least one of...
8901673 Semiconductor device having ring-shaped gate electrode, design apparatus, and program  
A semiconductor device includes: a substrate; a transistor that has a ring-shaped gate electrode formed on the substrate; a plurality of external dummy electrodes that are arranged outside the gate...
8900477 Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same  
Provided are a metal-polishing liquid that comprises an oxidizing agent, an oxidized-metal etchant, a protective film-forming agent, a dissolution promoter for the protective film-forming agent,...
8895444 Hard mask removal during FinFET formation  
An approach for polishing-based hard mask removal during FinFET device formation is provided. In a typical embodiment, an initial device will be provided with a set of fins (e.g., silicon (Si)), a...
8889554 Semiconductor structure and method for manufacturing the same  
The present invention provides a method for manufacturing a semiconductor structure, comprising: forming a first contact layer on an exposed active region of a first spacer; forming a second spacer...
8889553 Method for polishing through-silicon via (TSV) wafers and a polishing composition used in the method  
A method for polishing Through-Silicon Via (TSV) wafers is provided. The method comprises a step of subjecting the surface of a TSV wafer to a polishing treatment with a polishing composition...
8883020 Achieving greater planarity between upper surfaces of a layer and a conductive structure residing therein  
Greater planarity is achieved between surfaces of a conductive structure and a layer within which the conductive structure resides. A portion of the conductive structure protruding above the...
8883031 CMP polishing liquid and polishing method  
The CMP polishing liquid containing a medium and silica particles as an abrasive grain dispersed into the medium. The silica particles have a silanol group density of 5.0/nm2 or less and the...
8883034 Composition and method for polishing bulk silicon  
The invention provides a polishing composition comprising (a) silica, (b) one or more compounds that increases the removal rate of silicon, (c) one or more tetraalkylammonium salts, and (d) water,...
8877650 Methods of manufacturing semiconductor devices and optical proximity correction  
Methods of manufacturing semiconductor devices and methods of optical proximity correction methods are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes...
8877083 Surface treatment in the formation of interconnect structure  
A Ultra-Violet (UV) treatment is performed on an exposed surface of a low-k dielectric layer and an exposed surface of a metal line. After the UV treatment, an organo-metallic soak process is...
8877643 Method of polishing a silicon wafer  
This invention is to provide a method of polishing a silicon wafer wherein a high flatness can be attained likewise the conventional polishing method and further the occurrence of defects due to...
8877075 Apparatuses and methods for gas mixed liquid polishing, etching, and cleaning  
In accordance with an embodiment of the present invention, a method of polishing a device includes providing a layer having a non-uniform top surface. The non-uniform top surface includes a...
8877644 Polishing solution for copper polishing, and polishing method using same  
The polishing solution for copper polishing of the invention comprises a first organic acid component which is at least one type selected from among an organic acid containing a hydroxyl group, an...
8871644 Method of manufacturing semiconductor device  
According to one embodiment, a manufacturing method of a semiconductor device comprises forming a to-be-processed film includes a convex potion and concave potion on its surface on a semiconductor...
8871103 Process of planarizing a wafer with a large step height and/or surface area features  
A blanket stop layer is conformally formed on a layer with a large step height. A first chemical mechanical polishing process is performed to remove the blanket stop layer atop the layer in the...
8871109 Method for preparing a donor surface for reuse  
A donor wafer, for example of silicon, has an irregular surface following cleaving of a lamina from the surface, for example by exfoliation following implant of hydrogen and/or helium ions to...
8865013 Method for chemical mechanical polishing tungsten  
A method for chemical mechanical polishing of a substrate comprising tungsten using a nonselective chemical mechanical polishing composition.
8859391 Semiconductor device, method for manufacturing semiconductor device, method for laminating semiconductor wafers, and electronic device  
A method for manufacturing a semiconductor device including: forming a wiring layer on a surface side of a first semiconductor wafer; forming a buried film so as to fill in a level difference on...
8859428 Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof  
Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical...
8858817 Polishing apparatus and exception handling method thereof  
A polishing apparatus and exception handling method thereof is disclosed, the exception handling method of polishing apparatus includes: sending an alarm signal when an alarm is generated because...
8859434 Etching method  
The present invention relates to an etching method of capable of etching a silicon carbide substrate with a higher accuracy. A first etching step in which a silicon carbide substrate K is heated to...
8859366 Methods of fabricating silicon carbide devices having smooth channels  
Methods of forming silicon carbide power devices are provided. An n− silicon carbide layer is provided on a silicon carbide substrate. A p-type silicon carbide well region is provided on the n− sil...
8853083 Chemical mechanical polish in the growth of semiconductor regions  
A method includes performing a first planarization step to remove portions of a semiconductor region over isolation regions. The first planarization step has a first selectivity, with the first...
8853082 Polishing liquid for CMP and polishing method using the same  
An object of the present invention is to provide a polishing liquid for CMP with which polishing scratches can be reduced and a sufficiently high polishing rate can be obtained in a CMP step for an...
8853084 Self-adjusting gate hard mask  
A method provides an intermediate semiconductor device structure and includes providing a wafer having first dummy gate plugs and second dummy gate plugs embedded in a first layer having a...
8853081 High dose ion-implanted photoresist removal using organic solvent and transition metal mixtures  
Provided are methods for processing semiconductor substrates to remove high-dose ion implanted (HDI) photoresist structures without damaging other structures made of titanium nitride, tantalum...
8846538 Passive elements, articles, packages, semiconductor composites, and methods of manufacturing same  
Systems and methods associated with semiconductor articles are disclosed, including forming a first layer of material on a substrate, etching trenches within regions defining a passive element in...
8846534 Process for CMP with large feature size variation  
Embodiments of the present invention relate to reducing the size variation on a wafer fabrication. In some embodiments, at least a portion the backfill material over features larger than a...
8846533 Cleaning solution for substrate for semiconductor device  
A cleaning solution of the present invention contains a sodium ion, a potassium ion, an iron ion, an ammonium salt of a sulfuric ester represented by General Formula (1), and water, and each...
8846535 Method of fabricating a semiconductor device  
The present invention discloses a method for fabricating semiconductor devices. After removing excessive aluminum to form aluminum gates through a chemical mechanical planarization (CMP) process,...
8841216 Method and composition for chemical mechanical planarization of a metal  
A composition and associated method for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) are described herein which afford high and tunable rates of...
8841215 Polishing agent, compound semiconductor manufacturing method, and semiconductor device manufacturing method  
Afforded are a polishing agent, and a compound semiconductor manufacturing method and semiconductor device manufacturing method utilizing the agent, whereby the surface quality of compound...
8841197 Method for forming fin-shaped structures  
The present invention provides a method for forming a fin structure comprising the following steps: first, a multiple-layer structure is formed on a substrate; then, a sacrificial pattern is formed...
8828745 Method for manufacturing through-silicon via  
A method for manufacturing TSVs, wherein the method comprises several steps as follows: A stack structure having a substrate and an ILD layer (inter layer dielectric layer) is provided, in which an...
8828875 Method and apparatus for improving CMP planarity  
Provided is a method of planarizing a semiconductor device. A dielectric layer is formed over a substrate. A plurality of openings is formed in the dielectric layer. The openings have varying...
8828254 Plasma processing method  
A plasma processing method and a plasma processing apparatus in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing...
8828874 Chemical mechanical polishing of group III-nitride surfaces  
A method of chemically-mechanically polishing a substrate having a Group III-nitride surface includes providing a chemical-mechanical polishing slurry composition. The slurry composition includes a...
8831767 Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, or a characteristic of a polishing pad or tool  
Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, a characteristic of a polishing pad, or a characteristic of a...
8828841 Semiconductor device and method of manufacture  
A system and method for forming an isolation trench is provided. An embodiment comprises forming a trench and then lining the trench with a dielectric liner. Prior to etching the dielectric liner,...
8829483 Semiconductor device and manufacturing method thereof  
This invention discloses a semiconductor device and its manufacturing method. According to the method, a stop layer is deposited on a step-shaped bottom electrode, and then a first insulating layer...
8822339 Slurry composition for CMP, and polishing method  
The present invention relates to a CMP slurry composition comprising an abrasive particle; a dispersant; an ionic polymer additive; and a non-ionic polymer additive including a...
8822340 Abrasive compositions for chemical mechanical polishing and methods for using same  
A colloidal dispersion for chemical mechanical polishing comprising: (a) an abrasive component; and (b) from about 0.05% to about 10% by weight of the abrasive component, a water-soluble amphoteric...
8821746 Fabrication method of semiconductor device and chemical mechanical polishing apparatus  
A method of fabricating a semiconductor device includes dressing a surface of a polishing pad with a conditioning disk held by an arm while rotating a platen that holds the polishing pad in a...
8822333 Method of manufacturing a tungsten plug  
A method of manufacturing a tungsten plug is described for producing semiconductor integrated circuits. The method protects the dielectric layer from getting damaged and avoids impact from CMP...