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8940554 Method of creating an extremely thin semiconductor-on-insulator (ETSOI) layer having a uniform thickness  
A method for creating an extremely thin semiconductor-on-insulator (ETSOI) layer having a uniform thickness includes: measuring a thickness of a semiconductor-on-insulator (SOI) layer at a...
8940586 Mechanism for MEMS bump side wall angle improvement  
The present disclosure relates to a bump processing method and/or resulting MEMS-CMOS structure, in which one or more anti-stiction bumps are formed within a substrate prior to the formation of a...
8936729 Planarizing method  
According to one embodiment, a planarizing method is proposed. In the planarizing method, a surface to be processed of an object to be processed including a silicon oxide film is planarized in a...
8932952 Method for polishing silicon wafer and polishing liquid therefor  
Disclosed is a method for polishing a silicon wafer, wherein a surface to be polished of a silicon wafer is rough polished, while supplying a polishing liquid, which is obtained by adding a...
8932883 Method of measuring surface properties of polishing pad  
The present invention relates to a method of measuring surface properties of a polishing pad which measures surface properties such as surface topography or surface condition of a polishing pad...
8927869 Semiconductor structures and methods of manufacture  
Wire-bonded semiconductor structures using organic insulating material and methods of manufacture are disclosed. The method includes forming a metal wiring layer in an organic insulator layer. The...
8926859 Polishing composition for silicon wafers  
A polishing composition for a silicon wafer includes a macromolecular compound, an abrasive, and an aqueous medium. The macromolecular compound includes a constitutional unit (a1) represented by...
8927429 Chemical mechanical polishing (CMP) composition comprising a specific heteropolyacid  
A chemical mechanical polishing (CMP) composition comprising a specific heteropolyacid Abstract A chemical-mechanical polishing (CMP) composition comprising: (A) inorganic particles, organic...
8921185 Method for fabricating integrated circuit with different gate heights and different materials  
A method for fabricating an integrated circuit includes the following steps of: providing a substrate with at least one isolation structure formed therein so as to separate the substrate into a...
8920571 Method and materials for making a monolithic porous pad cast onto a rotatable base  
The present invention includes methods and materials for cleaning materials, particles, or chemicals from a substrate with a brush or pad. The method comprising: engaging a surface of a rotating...
8921229 Method of polishing copper wiring surfaces in ultra large scale integrated circuits  
A method of polishing copper wiring surfaces of in ultra large scale integrated circuit, the method including: a) preparing a polishing solution including between 35 and 80 w. % of a nano SiO2...
8921230 Etchant composition, and method of manufacturing a display substrate using the same  
An etchant composition includes about 25 percent by weight to about 35 percent by weight of phosphoric acid, about 3 percent by weight to about 9 percent by weight of nitric acid, about 10 percent...
8921166 Structure and method for placement, sizing and shaping of dummy structures  
A chip includes a number a plurality of functional areas of a layer and a number of dummy structures within the layer. The dummy structures are spaced from the functional areas. Each dummy...
8916433 Superior integrity of high-k metal gate stacks by capping STI regions  
When forming high-k metal gate electrode structures in an early manufacturing stage, integrity of an encapsulation and, thus, integrity of sensitive gate materials may be improved by reducing the...
8912095 Polishing method, polishing apparatus and polishing tool  
A polishing method and a polishing apparatus finish a surface of a substrate of a compound semiconductor containing an element such as Ga or the like to a desired level of flatness, so that the...
8906123 CMP slurry/method for polishing ruthenium and other films  
A method and associated composition for CMP processing of noble metal-containing substrates (such as ruthenium-containing substrates) afford both high removal rates of the noble metal and are...
8901003 Polishing method of semiconductor structure  
A polishing method of a semiconductor device is disclosed. A substrate having a first side and a second side opposite to the first side is provided. The substrate has a device layer formed on the...
8900473 Polishing solution for CMP, and method for polishing substrate using the polishing solution for CMP  
The CMP polishing liquid of the present invention contains 1,2,4-triazole, a phosphoric acid, an oxidant, and abrasive particles. The polishing method of the present invention is a substrate...
8901002 Polishing slurry for metal films and polishing method  
Provided are a polishing slurry for metal films and a polishing method which restrain the generation of erosion and seams, and makes the flatness of a surface polished therewith or thereby high....
8900335 CMP polishing slurry and method of polishing substrate  
A CMP polishing slurry of the present invention contains cerium oxide particles, water, and a polymer of at least one of a methacrylic acid and the salt thereof, and/or a polymer of at least one of...
8901673 Semiconductor device having ring-shaped gate electrode, design apparatus, and program  
A semiconductor device includes: a substrate; a transistor that has a ring-shaped gate electrode formed on the substrate; a plurality of external dummy electrodes that are arranged outside the gate...
8900477 Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same  
Provided are a metal-polishing liquid that comprises an oxidizing agent, an oxidized-metal etchant, a protective film-forming agent, a dissolution promoter for the protective film-forming agent,...
8895444 Hard mask removal during FinFET formation  
An approach for polishing-based hard mask removal during FinFET device formation is provided. In a typical embodiment, an initial device will be provided with a set of fins (e.g., silicon (Si)), a...
8889554 Semiconductor structure and method for manufacturing the same  
The present invention provides a method for manufacturing a semiconductor structure, comprising: forming a first contact layer on an exposed active region of a first spacer; forming a second spacer...
8889553 Method for polishing through-silicon via (TSV) wafers and a polishing composition used in the method  
A method for polishing Through-Silicon Via (TSV) wafers is provided. The method comprises a step of subjecting the surface of a TSV wafer to a polishing treatment with a polishing composition...
8883020 Achieving greater planarity between upper surfaces of a layer and a conductive structure residing therein  
Greater planarity is achieved between surfaces of a conductive structure and a layer within which the conductive structure resides. A portion of the conductive structure protruding above the...
8883031 CMP polishing liquid and polishing method  
The CMP polishing liquid containing a medium and silica particles as an abrasive grain dispersed into the medium. The silica particles have a silanol group density of 5.0/nm2 or less and the...
8883034 Composition and method for polishing bulk silicon  
The invention provides a polishing composition comprising (a) silica, (b) one or more compounds that increases the removal rate of silicon, (c) one or more tetraalkylammonium salts, and (d) water,...
8877650 Methods of manufacturing semiconductor devices and optical proximity correction  
Methods of manufacturing semiconductor devices and methods of optical proximity correction methods are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes...
8877083 Surface treatment in the formation of interconnect structure  
A Ultra-Violet (UV) treatment is performed on an exposed surface of a low-k dielectric layer and an exposed surface of a metal line. After the UV treatment, an organo-metallic soak process is...
8877643 Method of polishing a silicon wafer  
This invention is to provide a method of polishing a silicon wafer wherein a high flatness can be attained likewise the conventional polishing method and further the occurrence of defects due to...
8877075 Apparatuses and methods for gas mixed liquid polishing, etching, and cleaning  
In accordance with an embodiment of the present invention, a method of polishing a device includes providing a layer having a non-uniform top surface. The non-uniform top surface includes a...
8877644 Polishing solution for copper polishing, and polishing method using same  
The polishing solution for copper polishing of the invention comprises a first organic acid component which is at least one type selected from among an organic acid containing a hydroxyl group, an...
8871644 Method of manufacturing semiconductor device  
According to one embodiment, a manufacturing method of a semiconductor device comprises forming a to-be-processed film includes a convex potion and concave potion on its surface on a semiconductor...
8871103 Process of planarizing a wafer with a large step height and/or surface area features  
A blanket stop layer is conformally formed on a layer with a large step height. A first chemical mechanical polishing process is performed to remove the blanket stop layer atop the layer in the...
8871109 Method for preparing a donor surface for reuse  
A donor wafer, for example of silicon, has an irregular surface following cleaving of a lamina from the surface, for example by exfoliation following implant of hydrogen and/or helium ions to...
8865013 Method for chemical mechanical polishing tungsten  
A method for chemical mechanical polishing of a substrate comprising tungsten using a nonselective chemical mechanical polishing composition.
8859391 Semiconductor device, method for manufacturing semiconductor device, method for laminating semiconductor wafers, and electronic device  
A method for manufacturing a semiconductor device including: forming a wiring layer on a surface side of a first semiconductor wafer; forming a buried film so as to fill in a level difference on...
8859428 Chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) applications and methods of making thereof  
Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical...
8858817 Polishing apparatus and exception handling method thereof  
A polishing apparatus and exception handling method thereof is disclosed, the exception handling method of polishing apparatus includes: sending an alarm signal when an alarm is generated because...
8859434 Etching method  
The present invention relates to an etching method of capable of etching a silicon carbide substrate with a higher accuracy. A first etching step in which a silicon carbide substrate K is heated to...
8859366 Methods of fabricating silicon carbide devices having smooth channels  
Methods of forming silicon carbide power devices are provided. An n− silicon carbide layer is provided on a silicon carbide substrate. A p-type silicon carbide well region is provided on the n− sil...
8853083 Chemical mechanical polish in the growth of semiconductor regions  
A method includes performing a first planarization step to remove portions of a semiconductor region over isolation regions. The first planarization step has a first selectivity, with the first...
8853082 Polishing liquid for CMP and polishing method using the same  
An object of the present invention is to provide a polishing liquid for CMP with which polishing scratches can be reduced and a sufficiently high polishing rate can be obtained in a CMP step for an...
8853084 Self-adjusting gate hard mask  
A method provides an intermediate semiconductor device structure and includes providing a wafer having first dummy gate plugs and second dummy gate plugs embedded in a first layer having a...
8853081 High dose ion-implanted photoresist removal using organic solvent and transition metal mixtures  
Provided are methods for processing semiconductor substrates to remove high-dose ion implanted (HDI) photoresist structures without damaging other structures made of titanium nitride, tantalum...
8846538 Passive elements, articles, packages, semiconductor composites, and methods of manufacturing same  
Systems and methods associated with semiconductor articles are disclosed, including forming a first layer of material on a substrate, etching trenches within regions defining a passive element in...
8846534 Process for CMP with large feature size variation  
Embodiments of the present invention relate to reducing the size variation on a wafer fabrication. In some embodiments, at least a portion the backfill material over features larger than a...
8846533 Cleaning solution for substrate for semiconductor device  
A cleaning solution of the present invention contains a sodium ion, a potassium ion, an iron ion, an ammonium salt of a sulfuric ester represented by General Formula (1), and water, and each...
8846535 Method of fabricating a semiconductor device  
The present invention discloses a method for fabricating semiconductor devices. After removing excessive aluminum to form aluminum gates through a chemical mechanical planarization (CMP) process,...