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7615386 |
Thick oxide film for wafer backside prior to metalization loop
A method for reducing wafer backside large particle contamination, comprising: performing front end of line processing of a memory device, depositing a thick oxide on the wafer backside so that at...
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7611958 |
Method of making a semiconductor element
A method of producing a capacitor that includes producing a first electrode having a first surface; forming a recess in an element, walls of the element and the first surface of the first electrode...
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7611552 |
Semiconductor polishing composition
A semiconductor polishing composition is disclosed. The composition includes fumed silica. The semiconductor polishing composition is an aqueous dispersion solution of fumed silica. Further, the...
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7608543 |
Method for planarizing thin layer of semiconductor device
A method for planarizing a layer of a semiconductor device includes depositing a high density plasma (HDP) oxide layer over a wafer to have a reflective index distribution that is inversely...
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7608536 |
Method of manufacturing contact opening
Disclosed is a method of manufacturing a semiconductor device, in which a high-temperature SOD (spin on dielectric) annealing process is performed to prevent a SOD crack, and a nitride film,...
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7604527 |
Methods and systems for planarizing workpieces, e.g., microelectronic workpieces
Planarizing workpieces, e.g., microelectronic workpieces, can employ a process indicator which is adapted to change an optical property in response to a planarizing condition. This process...
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7601645 |
Methods for fabricating device features having small dimensions
Methods for fabricating devices having small feature sizes are provided. In an exemplary embodiment, a method comprises forming a patterned first mask layer overlying a subject material layer and...
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7601644 |
Method for manufacturing silicon wafers
This silicon wafer production process comprises in the order indicated a planarization step, in which the front surface and the rear surface of a wafer are ground or lapped, a single-wafer acid...
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7601643 |
Arrangement and method for fabricating a semiconductor wafer
An arrangement and method for fabricating a semiconductor wafer which utilizes a nonaqueous solvent rinse is disclosed.
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7601640 |
Method of manfacturing semiconductor device
A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into...
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7601615 |
Method of grinding back surface of semiconductor wafer and semiconductor wafer grinding apparatus
A semiconductor wafer back-surface grinding method, for grinding a back surface of a semiconductor wafer, an opposed front surface of the semiconductor wafer being adhered to a support base...
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7601273 |
Polishing slurry composition and method of using the same
A polishing slurry composition including an abrasive, a pH-adjusting agent, a water-soluble thickening agent, and a chelating agent, wherein the chelating agent includes at least one of an acetate...
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7598175 |
Apparatus and method for confined area planarization
A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an...
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7598098 |
Monitoring the reduction in thickness as material is removed from a wafer composite and test structure for monitoring removal of material
The aim of the invention is to create a simple monitoring or testing method for monitoring a reduction in thickness as material is removed from a bonded semiconductor wafer pair, which prevents...
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7597729 |
Polishing composition and polishing method using the same
A polishing composition contains an abrasive such as colloidal silica, at least one kind of compound selected from imidazole and an imidazole derivative, and water. The polishing composition...
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7589052 |
Slurry composition and method for chemical mechanical polishing of copper integrated with tungsten based barrier metals
The present invention is related to a slurry composition for polishing copper integrated with tungsten containing barrier layers and its use in a CMP method. The present invention is also related...
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7589023 |
Method of manufacturing semiconductor wafer
A method of manufacturing a semiconductor wafer, comprising the step of differentiating the glossiness of a front surface from that of a rear surface of the wafer by using an abrasive cloth with a...
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7585772 |
Process for smoothening III-N substrates
A process for preparing smoothened III-N, in particular smoothened III-N substrate or III-N template, wherein III denotes at least one element of group III of the Periodic System, selected from Al,...
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7585341 |
Polishing material comprising diamond clusters
Diamond clusters are used as a polishing material of free abrading particles, each being a combination of artificial diamond particles having primary particle diameters of 20 nm or less and...
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7582565 |
Method and apparatus for semiconductor wafer planarization
Broadly speaking, the present invention provides a method and an apparatus for planarizing a semiconductor wafer (“wafer”). More specifically, the present invention provides for depositing a...
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7582564 |
Process and composition for conductive material removal by electrochemical mechanical polishing
Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In one embodiment, a composition for processing a substrate having a conductive...
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7582556 |
Circuitry component and method for forming the same
A circuit structure includes a semiconductor substrate, first and second metallic posts over the semiconductor substrate, an insulating layer over the semiconductor substrate and covering the first...
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7582221 |
Wafer manufacturing method, polishing apparatus, and wafer
The present invention provides a wafer manufacturing method and a wafer polishing apparatus which enable control of sags in a periphery of a wafer and improvement of nanotopology values thereof...
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7582127 |
Polishing composition for a tungsten-containing substrate
The invention provides a method of chemically-mechanically polishing a substrate comprising tungsten through use of a composition comprising a tungsten etchant, an inhibitor of tungsten etching,...
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7579279 |
Method to passivate conductive surfaces during semiconductor processing
A method for processing semiconductor wafers is disclosed. A solution is applied to a semiconductor wafer to prevent dendrites and electrolytic reactions at the surface of metal interconnects. The...
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7575615 |
Process for preparing a polishing composition
The present invention relates to a process for preparing a polishing composition comprising a colloidal silica prepared from a silicate. The first step involves adjusting the pH of a silica...
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7566663 |
Method for manufacturing semiconductor device or semiconductor wafer using a chucking unit
A method for manufacturing a semiconductor device or a semiconductor wafer using a chucking unit is provided to remove a slurry that adheres to the back surface of the semiconductor wafer. An edge...
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7563717 |
Method for fabricating a semiconductor device
The method includes chemical-mechanical polishing to planarize an insulating interlayer deposited on a lower pattern. The insulating interlayer is polished using a surfactant. The...
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7563383 |
CMP composition with a polymer additive for polishing noble metals
The invention provides a method of polishing a substrate comprising contacting a substrate comprising a noble metal on a surface of the substrate with a chemical-mechanical polishing system...
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7562662 |
Cleaning solution and cleaning method of a semiconductor device
A cleaning method for removing foreign bodies during the fabrication of semiconductor devices including treating a substrate with a cleaning solution including an oxidizer to form a chemical oxide...
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7560384 |
Chemical mechanical polishing method
A chemical mechanical polishing method, including: chemically and mechanically polishing a polishing target surface by continuously performing a first polishing step and a second polishing step...
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7557041 |
Apparatus and method for supplying chemicals
A chemical supplying apparatus includes first and second mixing tanks for mixing and supplying chemical slurries used in a semiconductor fabrication process. The slurries are alternately provided...
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7556972 |
Detection and characterization of SiCOH-based dielectric materials during device fabrication
Processes and apparatuses are disclosed for detecting and characterizing SiCOH-based dielectric materials during integrated circuit fabrication. The processes generally include chromatographically...
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7554199 |
Substrate for evaluation
The CMP technology is provided for a damascene wiring structure having a plural-layer wiring that is excellent in flatness and resolvability of Cu residue. An evaluation substrate is provided for...
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7553768 |
Substrate and a method for polishing a substrate
A substrate having flatness of less than 230 nmPV and surface roughness at RMS of less than 0.20 nm. is obtained by a method comprising: a process of polishing an object to be polished with a...
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7553763 |
Salicide process utilizing a cluster ion implantation process
A salicide process contains providing a silicon substrate that comprises at least a predetermined salicide region, performing a cluster ion implantation process to form an amorphized layer in the...
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7553677 |
Method for manufacturing ferroelectric memory
A method for manufacturing a ferroelectric memory includes the steps of: (a) forming a ferroelectric capacitor by sequentially laminating, on a substrate, a lower electrode, a ferroelectric layer...
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7553430 |
Polishing slurries and methods for chemical mechanical polishing
Aqueous polishing slurries for chemical-mechanical polishing are effective for polishing copper at high polish rates. The aqueous slurries according to the present invention may include soluble...
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7550388 |
Polishing composition and polishing method
A polishing composition contains a deterioration inhibitor for inhibiting deterioration of polishing capability of the polishing composition, an abrasive, and water. The deterioration inhibitor is...
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7550092 |
Chemical mechanical polishing composition
A chemical mechanical polishing composition includes: an abrasive component, a corrosion inhibitor, a surfactant, a diacid compound, a metal residue inhibitor, and water. The metal residue...
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7550020 |
Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method
A chemical mechanical polishing aqueous dispersion comprises abrasives in a concentration of not more than 1.5% by mass, wherein the abrasives comprise ceria and have an average dispersed particle...
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RE40790 |
Method for making electrical contact with an active area through sub-micron contact openings and a semiconductor device
A semiconducting processing method for making electrical contacts with an active area in sub-micron geometries includes: (a) providing a pair of conductive runners on a semiconductor wafer; (b)...
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7544618 |
Two-step chemical mechanical polishing process
A chemical mechanical polishing method is disclosed. The method includes forming a film on a wafer having at least one trench structure thereon; polishing the surface of the film by providing a...
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7544606 |
Method to implement stress free polishing
A method of forming a metal feature in a low-k dielectric layer is provided. The method includes forming an opening in a low-k dielectric layer, forming a metal layer having a substantially planar...
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7544307 |
Metal polishing liquid and polishing method using it
A metal polishing liquid which contains a compound represented by the following formula (1), an aromatic heterocyclic ring compound, and an oxidizing agent, and a chemical mechanical polishing...
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7541287 |
Method for machining a semiconductor wafer on both sides in a carrier, carrier, and a semiconductor wafer produced by the method
A semiconductor wafer is guided in a cutout in a carrier while a thickness of the semiconductor wafer is reduced to a target thickness by material removal from the front and back surfaces...
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7540080 |
Method for mounting component by suction nozzle
A method and apparatus for mounting a light emitting element, enabling positioning on an object with precision with reference to the optic axis of a light emitting element, and mounting the...
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7538035 |
Lapping of gold pads in a liquid medium for work hardening the surface of the pads
A method for work hardening gold contact pads is disclosed. The method includes providing gold contact pads, providing lapping pads, and placing the lapping pads in contact with the gold contact...
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7534725 |
Advanced process control for semiconductor processing
An advanced process control (APC) method for semiconductor fabrication is provided. A first substrate and a second substrate are provided. The first substrate and the second substrate include a...
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7534364 |
Methods for a multilayer retaining ring
A substrate is maintained beneath a substrate mounting surface with a retaining ring that includes a generally annular lower portion having a bottom surface for contacting the polishing surface...
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