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7625821 Process and apparatus for thinning a semiconductor workpiece  
The present invention provides system and apparatus for use in processing wafers. The new system and apparatus allows for the production of thinner wafers that at same time remain strong. As a...
7622391 Method of forming an electrically conductive line in an integrated circuit  
A method of forming a semiconductor structure comprises providing a semiconductor structure comprising a layer of a dielectric material provided over an electrically conductive feature. An opening...
7615475 Method for fabricating landing polysilicon contact structures for semiconductor devices  
A method for forming an integrated circuit device, e.g., memory, logic. The method includes providing a semiconductor substrate (e.g., silicon wafer) comprising a surface region and forming a...
7611552 Semiconductor polishing composition  
A semiconductor polishing composition is disclosed. The composition includes fumed silica. The semiconductor polishing composition is an aqueous dispersion solution of fumed silica. Further, the...
7601642 Method of processing silicon wafer  
The inventive method for processing a silicon wafer is a method comprising step 11 in which a single crystal ingot is sliced into thin disc-like wafers; step 13 in which the surface of each...
7598175 Apparatus and method for confined area planarization  
A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an...
7597729 Polishing composition and polishing method using the same  
A polishing composition contains an abrasive such as colloidal silica, at least one kind of compound selected from imidazole and an imidazole derivative, and water. The polishing composition...
7589023 Method of manufacturing semiconductor wafer  
A method of manufacturing a semiconductor wafer, comprising the step of differentiating the glossiness of a front surface from that of a rear surface of the wafer by using an abrasive cloth with a...
7589022 Method of chemical mechanical polishing and method of fabricating semiconductor device using the same  
There is provided a method of chemical mechanical polishing (CMP) and a method of fabricating a semiconductor device using the same. The method includes forming a layer to be polished on a...
7585341 Polishing material comprising diamond clusters  
Diamond clusters are used as a polishing material of free abrading particles, each being a combination of artificial diamond particles having primary particle diameters of 20 nm or less and...
7582221 Wafer manufacturing method, polishing apparatus, and wafer  
The present invention provides a wafer manufacturing method and a wafer polishing apparatus which enable control of sags in a periphery of a wafer and improvement of nanotopology values thereof...
7582127 Polishing composition for a tungsten-containing substrate  
The invention provides a method of chemically-mechanically polishing a substrate comprising tungsten through use of a composition comprising a tungsten etchant, an inhibitor of tungsten etching,...
7579279 Method to passivate conductive surfaces during semiconductor processing  
A method for processing semiconductor wafers is disclosed. A solution is applied to a semiconductor wafer to prevent dendrites and electrolytic reactions at the surface of metal interconnects. The...
7575615 Process for preparing a polishing composition  
The present invention relates to a process for preparing a polishing composition comprising a colloidal silica prepared from a silicate. The first step involves adjusting the pH of a silica...
7572693 Methods for transistor formation using selective gate implantation  
Methods are disclosed for semiconductor device fabrication in which dopants are selectively implanted into transistor gate structures to counteract or compensate for dopant depletion during...
7563716 Polishing method  
A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable...
7557041 Apparatus and method for supplying chemicals  
A chemical supplying apparatus includes first and second mixing tanks for mixing and supplying chemical slurries used in a semiconductor fabrication process. The slurries are alternately provided...
7556972 Detection and characterization of SiCOH-based dielectric materials during device fabrication  
Processes and apparatuses are disclosed for detecting and characterizing SiCOH-based dielectric materials during integrated circuit fabrication. The processes generally include chromatographically...
7553768 Substrate and a method for polishing a substrate  
A substrate having flatness of less than 230 nmPV and surface roughness at RMS of less than 0.20 nm. is obtained by a method comprising: a process of polishing an object to be polished with a...
7553700 Chemical-enhanced package singulation process  
Singulation of individual electronic packages fabricated as part of a common matrix, is accomplished by mask patterning and chemical exposure in combination with physical sawing. In one embodiment...
7553430 Polishing slurries and methods for chemical mechanical polishing  
Aqueous polishing slurries for chemical-mechanical polishing are effective for polishing copper at high polish rates. The aqueous slurries according to the present invention may include soluble...
7550387 Semiconductor wafer processing method  
A semiconductor wafer processing method for planarizing an additional layer formed on the front side of a semiconductor wafer. First, the wafer is held on a chuck table included in a cutting device...
7550092 Chemical mechanical polishing composition  
A chemical mechanical polishing composition includes: an abrasive component, a corrosion inhibitor, a surfactant, a diacid compound, a metal residue inhibitor, and water. The metal residue...
7550020 Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method  
A chemical mechanical polishing aqueous dispersion comprises abrasives in a concentration of not more than 1.5% by mass, wherein the abrasives comprise ceria and have an average dispersed particle...
7544618 Two-step chemical mechanical polishing process  
A chemical mechanical polishing method is disclosed. The method includes forming a film on a wafer having at least one trench structure thereon; polishing the surface of the film by providing a...
7544617 Die scale control of chemical mechanical polishing  
A method for control of chemical mechanical polishing of a pattern dependant non-uniform wafer surfaces in a die scale wherein the die in the wafer surface have a plurality of zones of different...
7544606 Method to implement stress free polishing  
A method of forming a metal feature in a low-k dielectric layer is provided. The method includes forming an opening in a low-k dielectric layer, forming a metal layer having a substantially planar...
7541287 Method for machining a semiconductor wafer on both sides in a carrier, carrier, and a semiconductor wafer produced by the method  
A semiconductor wafer is guided in a cutout in a carrier while a thickness of the semiconductor wafer is reduced to a target thickness by material removal from the front and back surfaces...
7534719 Method for reduction in metal dishing after CMP  
A protective barrier layer, formed of a material such as titanium or titanium nitride for which removal by chemical mechanical polishing (CMP) is primarily mechanical rather than primarily...
7534277 Slurry composition for secondary polishing of silicon wafer  
Disclosed is a slurry composition for secondary polishing of silicon wafers comprising: 2˜10 weight % of colloidal silica having an average particle size of 30˜80 nm; 0.5˜1.5 % by weight of...
7524347 CMP composition comprising surfactant  
The invention provides a polishing composition comprising fumed alumina, alpha alumina, silica, a nonionic surfactant, a metal chelating organic acid, and a liquid carrier. The invention further...
7521363 MEMS device with non-standard profile  
A method of producing a MEMS device forms structure on a non-standard device wafer. To that end, the method provides the noted non-standard device wafer, which has a wafer outer diameter and a...
7514363 Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use  
A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, benzenesulfonic acid compound, a per-compound...
7513920 Free radical-forming activator attached to solid and used to enhance CMP formulations  
A CMP composition having: a fluid comprising water and at least one oxidizing compound that produces free radicals when contacted with an activator; and a plurality of particles having a surface...
7510973 Method for forming fine pattern in semiconductor device  
A method for forming a fine pattern in a semiconductor device is provided. In one aspect, the method can construct a fine pattern in semiconductor devices. The fine pattern has a critical dimension...
7510972 Method of processing substrate, post-chemical mechanical polishing cleaning method, and method of and program for manufacturing electronic device  
A method of processing a substrate which enables a surface damaged layer and polishing remnants on the surface of an insulating film to be removed, and enable the amount removed of the surface...
7510970 Process for manufacturing semiconductor integrated circuit device  
In order to provide an anticorrosive technique for metal wirings formed by a chemical mechanical polishing (CMP) method, a process for manufacturing a semiconductor integrated circuit device...
7504337 IC chip uniform delayering methods  
Methods of uniformly delayering an IC chip are disclosed. One embodiment includes: performing an ash on the wafer including an Al layer thereof and etching the Al layer; polishing an edge of the...
7501051 Electropolishing electrolyte and method for planarizing a metal layer using the same  
The present electropolishing electrolyte comprises an acid solution and an alcohol additive having at least one hydroxy group, wherein the contact angle of the alcohol additive is smaller than the...
7501035 Method of manufacturing replica diffraction grating  
A method of manufacturing a replica diffraction grating includes the steps of: forming a metal thin film on a grating surface of a master diffraction grating, adhering a replica substrate to the...
7498263 Method of planarizing an inter-metal insulation film  
A method for forming a planarized inter-metal insulation film is provided. The method includes applying a CMP process to an insulation film as controlled by a polish-stop layer pattern formed on an...
7485162 Polishing composition  
A polishing composition of the present invention, to be used in polishing for forming wiring in a semiconductor device, includes: a specific surfactant; a silicon oxide; at least one selected from...
7476613 Method of forming an electrical contact in a semiconductor device using an improved self-aligned contact (SAC) process  
A contact for a semiconductor device is made by performing, inter alia, a CMP process on an interlayer insulation layer to expose a first hard mask layer of each conductive line. The interlayer...
7475368 Deflection analysis system and method for circuit design  
A system, a method and a computer program product for analyzing a circuit design provide for discretizing the circuit design into a series of pixels. A fraction of at least one constituent material...
7456106 Method for producing a silicon wafer  
Provided is a method for producing a silicon wafer whose surfaces exhibit precise flatness and minute surface roughness, and which allows one to visually discriminate between the front and rear...
7452816 Semiconductor processing method and chemical mechanical polishing methods  
This invention includes a chemical mechanical polishing method including providing a substrate having an organic material to be polished by chemical mechanical polishing. In one implementation, the...
7452481 Polishing slurry and method of reclaiming wafers  
The polishing slurry contains monoclinic zirconium oxide particles having a crystallite size of 10 to 1,000 nm and an average particle diameter of 30 to 2,000 nm in an amount of 1 to 20 weight %, a...
7446045 Method of manufacturing nitride substrate for semiconductors  
In an independent GaN film manufactured by creating a GaN layer on a base heterosubstrate using vapor-phase deposition and then removing the base substrate, owing to layer-base discrepancy in...
7446039 Integrated circuit system with dummy region  
An integrated circuit system comprised by forming a first region, a second region and a third region within a dielectric over a substrate. The first region includes tungsten plugs. The second...
7446020 Wafer dividing method and dividing apparatus  
A method of dividing a wafer whose strength is reduced along a plurality of dividing lines formed in a lattice pattern on the front surface, along the dividing lines, comprising the steps of: ...