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7625821 |
Process and apparatus for thinning a semiconductor workpiece
The present invention provides system and apparatus for use in processing wafers. The new system and apparatus allows for the production of thinner wafers that at same time remain strong. As a...
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7611552 |
Semiconductor polishing composition
A semiconductor polishing composition is disclosed. The composition includes fumed silica. The semiconductor polishing composition is an aqueous dispersion solution of fumed silica. Further, the...
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7601643 |
Arrangement and method for fabricating a semiconductor wafer
An arrangement and method for fabricating a semiconductor wafer which utilizes a nonaqueous solvent rinse is disclosed.
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7601640 |
Method of manfacturing semiconductor device
A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into...
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7595509 |
Single crystal wafer for semiconductor laser
A surface of the single crystal wafer 5 for semiconductor laser having an orientation flat formed by cleaving is polished by using the abrasive cloth 8 with high hardness under the optimized...
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7582221 |
Wafer manufacturing method, polishing apparatus, and wafer
The present invention provides a wafer manufacturing method and a wafer polishing apparatus which enable control of sags in a periphery of a wafer and improvement of nanotopology values thereof...
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7579279 |
Method to passivate conductive surfaces during semiconductor processing
A method for processing semiconductor wafers is disclosed. A solution is applied to a semiconductor wafer to prevent dendrites and electrolytic reactions at the surface of metal interconnects. The...
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7576007 |
Method for electrochemically mechanically polishing a conductive material on a substrate
Aspects of the present invention include a method and an apparatus that may be utilized to reduce dishing and improve cleaning efficiency of a material layer residue (e.g., copper residual) by...
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7569492 |
Method for post-etch cleans
The current invention provides methods for performing a cleaning process that provides greater cleaning efficiency with less damage to device structures. After etching and photoresist stripping, a...
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7557041 |
Apparatus and method for supplying chemicals
A chemical supplying apparatus includes first and second mixing tanks for mixing and supplying chemical slurries used in a semiconductor fabrication process. The slurries are alternately provided...
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7556972 |
Detection and characterization of SiCOH-based dielectric materials during device fabrication
Processes and apparatuses are disclosed for detecting and characterizing SiCOH-based dielectric materials during integrated circuit fabrication. The processes generally include chromatographically...
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7556916 |
Method for burying resist and method for manufacturing semiconductor device
A resist film is applied to an entire surface and subjected to patterning substantially in the same form as an opening to bury the resist film inside the opening. When a positive resist is used, a...
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7550387 |
Semiconductor wafer processing method
A semiconductor wafer processing method for planarizing an additional layer formed on the front side of a semiconductor wafer. First, the wafer is held on a chuck table included in a cutting device...
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7550092 |
Chemical mechanical polishing composition
A chemical mechanical polishing composition includes: an abrasive component, a corrosion inhibitor, a surfactant, a diacid compound, a metal residue inhibitor, and water. The metal residue...
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7540935 |
Plasma oxidation and removal of oxidized material
A method of etching a conductive layer includes converting at least a portion of the conductive layer and etching the conductive layer to substantially remove the converted portion of the...
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7534277 |
Slurry composition for secondary polishing of silicon wafer
Disclosed is a slurry composition for secondary polishing of silicon wafers comprising: 2˜10 weight % of colloidal silica having an average particle size of 30˜80 nm; 0.5˜1.5 % by weight of...
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7510972 |
Method of processing substrate, post-chemical mechanical polishing cleaning method, and method of and program for manufacturing electronic device
A method of processing a substrate which enables a surface damaged layer and polishing remnants on the surface of an insulating film to be removed, and enable the amount removed of the surface...
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7510959 |
Method of manufacturing a semiconductor device having damascene structures with air gaps
A method of manufacturing a semiconductor device having damascene structures with air gaps is provided. In one embodiment, the method comprises the steps of depositing and patterning a disposable...
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7504337 |
IC chip uniform delayering methods
Methods of uniformly delayering an IC chip are disclosed. One embodiment includes: performing an ash on the wafer including an Al layer thereof and etching the Al layer; polishing an edge of the...
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7501312 |
Method of protecting semiconductor wafer and adhesive film for protection of semiconductor wafer
A protecting method for a semiconductor wafer in a step of processing a semiconductor wafer which involves a first step of adhering an adhesive film for protection of a semiconductor wafer in which...
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7491342 |
Bonded semiconductor substrate manufacturing method thereof
The present invention provides a bonded substrate fabricated to have its final active layer thickness of 200 nm or lower by performing the etching by only 1 nm to 1 μm with a solution having an...
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7475368 |
Deflection analysis system and method for circuit design
A system, a method and a computer program product for analyzing a circuit design provide for discretizing the circuit design into a series of pixels. A fraction of at least one constituent material...
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7470622 |
Fabrication and use of polished silicon micro-mirrors
A method of fabricating silicon micro-mirrors includes etching from opposite sides of a silicon wafer with a polished surface on at least one of the opposite sides, to form silicon bars each having...
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7470171 |
Surface polishing method and apparatus thereof
A surface polishing method that polishes the surface of a hard brittle material, such as a glass substrate, an oxide film of a silicon wafer, and a ceramic substrate is disclosed. In the surface...
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7468322 |
Methods of multi-step electrochemical mechanical planarization of Cu
A method is provided for removing conductive material from a metal layer deposited on a wafer having die level thickness variations on its surface. The method includes contacting the metal layer...
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7465977 |
Method for producing a packaged integrated circuit
There is described a method for producing a packaged integrated circuit. The method comprises a first step of building an integrated circuit having a micro-structure suspended above a micro-cavity,...
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7456106 |
Method for producing a silicon wafer
Provided is a method for producing a silicon wafer whose surfaces exhibit precise flatness and minute surface roughness, and which allows one to visually discriminate between the front and rear...
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7455785 |
Method of determining a flatness of an electronic device substrate, method of producing the substrate, method of producing a mask blank, method of producing a transfer mask, polishing method, electronic device substrate, mask blank, transfer mask, and polishing apparatus
A flatness of a substrate is determined to achieve a desired flatness of a mask blank by predicting the variation in flatness resulting from a film stress of a thin film formed on the substrate....
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7452816 |
Semiconductor processing method and chemical mechanical polishing methods
This invention includes a chemical mechanical polishing method including providing a substrate having an organic material to be polished by chemical mechanical polishing. In one implementation, the...
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7449393 |
Method of manufacturing a semiconductor device with a shallow trench isolation structure
In a method of manufacturing a semiconductor device with a shallow trench isolation structure, trenches are formed to extend into a semiconductor substrate. Subsequently, a first insulating film is...
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7442645 |
Method of polishing a silicon-containing dielectric
The inventive method of polishing a silicon-containing dielectric layer involves the use of a chemical-mechanical polishing system comprising (a) an inorganic abrasive, (b) a polishing additive,...
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7435683 |
Apparatus and method for selectively recessing spacers on multi-gate devices
Embodiments of an apparatus and methods for fabricating a spacer on one part of a multi-gate transistor without forming a spacer on another part of the multi-gate transistor are generally described...
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7435682 |
Method of manufacturing semiconductor device
Disclosed is a method of manufacturing a semiconductor device comprising forming an insulating film above a substrate, forming a recess in the insulating film, successively forming an underlying...
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7432186 |
Method of surface treating substrates and method of manufacturing III-V compound semiconductors
Affords methods of surface treating a substrate and of manufacturing Group III-V compound semiconductors, in which a substrate made of a Group III-V semiconductor compound is rendered...
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7425172 |
Customized polish pads for chemical mechanical planarization
A polishing pad for chemical mechanical planarization of a film on a substrate is customized by obtaining one or more characteristics of a structure on a substrate. For example, when the structure...
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7419917 |
Ion implanted microscale and nanoscale device method
A method is used for producing nanoscale and microscale devices in a variety of materials, such as silicon dioxide patterned buried films. The method is inexpensive and reliable for making small...
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7419915 |
Laser assisted chemical etching method for release microscale and nanoscale devices
A method using an etchant and a laser for localized precise heating enables precise etching and release of MEMS devices with improved process control while expanding the number of materials used to...
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7419519 |
Engineered non-polymeric organic particles for chemical mechanical planarization
An abrasive composition comprising composite non-polymeric organic particles that is useful for chemical mechanical planarization (CMP), and which can widely be used in the semiconductor industry....
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7416962 |
Method for processing a semiconductor wafer including back side grinding
A method is provided for processing the back side of a semiconductor wafer after the wafer has been lapped. The process includes grinding the back side of the wafer to remove wafer material, to...
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7413986 |
Feedforward and feedback control for conditioning of chemical mechanical polishing pad
A method, apparatus and medium of conditioning a planarizing surface includes installing a wafer to be polished in a chemical mechanical polishing (CMP) apparatus having a polishing pad and a...
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7410814 |
Process and apparatus for cleaning silicon wafers
An effective electropurge process and apparatus for wet processing of semiconductor wafers applies electrical charges to the wafer surface with an ample voltage sufficient to provide an effective...
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7405152 |
Reducing wire erosion during damascene processing
A damascene process incorporating a GCIB step is provided. The GCIB step can replace one or more CMP steps in the traditional damascene process. The GCIB step allows for selectable removal of...
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7402520 |
Edge removal of silicon-on-insulator transfer wafer
A silicon-on-insulator transfer wafer having a front surface with a circumferential lip around a circular recess is polished. In one version, the circular recess on the front surface of the wafer...
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7390755 |
Methods for post etch cleans
The current invention provides methods for performing a cleaning process that provides greater cleaning efficiency with less damage to device structures. After etching and photoresist stripping, a...
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7390747 |
Nitride semiconductor substrate and method of producing same
A nitride semiconductor substrate having a rugged surface being lapped by whetting granules to roughness between Rms5 nm and Rms200 nm, which has a function of reducing dislocations of a GaN, InGaN...
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7387455 |
Substrate processing device, substrate processing method, and developing device
Rinsing nozzles 310 a to 310 e are moved on a wafer W while they are discharging rinsing solution 326 . At that point, discharging openings 317 a to 317 e are contacted to developing...
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7381647 |
Methods and systems for planarizing microelectronic devices with Ge-Se-Ag layers
Microelectronic devices including a layer of germanium and selenium, optionally including up to 10 atomic percent silver, show promise for select applications. Manufacturing microelectronic devices...
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7381638 |
Fabrication technique using sputter etch and vacuum transfer
First material ( 106 ) is situated on the surface of a substructure ( 100 and 102 ) and in an opening ( 104 ), such as a Wench, that extends partway through the substructure. Second material (...
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7378349 |
Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method
Disclosed is a chemical mechanical polishing aqueous dispersion comprising (A1) first fumed silica having a specific surface area of not less than 10 m 2 /g and less than 160 m 2 /g and an average...
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7377836 |
Versatile wafer refining
Methods of refining using a plurality of refining elements are discussed. A refining apparatus having refining elements that can be smaller than the workpiece being refined are disclosed. New...
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