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9039925 Polishing slurry composition  
Provided is a polishing slurry composition, including a non-ionic surfactant represented by the following formula (1) R—(OCH2CH2)x—OH formula (1) wherein x is an integer from 1 to 50, and R is...
9035416 Efficient pitch multiplication process  
Pitch multiplied and non-pitch multiplied features of an integrated circuit, e.g., features in the array, interface and periphery areas of the integrated circuit, are formed by processing a...
9034703 Self aligned contact with improved robustness  
A method of forming a semiconductor device including providing a functional gate structure on a channel portion of a semiconductor substrate. A gate sidewall spacer is adjacent to the functional...
9034767 Facilitating mask pattern formation  
Mask pattern formation is facilitated by: providing a mask structure including at least one sacrificial spacing structure disposed above a substrate structure; disposing a spacer layer conformally...
9029244 Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus  
An apparatus and method for fabricating a semiconductor device using a 4-way valve with improved purge efficiency by improving a gas valve system by preventing dead volume from occurring are...
9023666 Method for electron beam induced etching  
The invention relates to a method for electron beam induced etching of a material (100, 200) with the method steps providing at least one etching gas at a position of the material (100, 200) at...
RE45507 ***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Integrated circuit having oversized components and method of manufacture thereof
 
An integrated circuit includes electrical components that include one or more electrical elements on one or more dielectric layers. The electrical element has a geometric shape that exceeds...
9023734 Radical-component oxide etch  
A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from...
9023219 Method of manufacturing a magnetoresistive device  
A method of manufacturing a magnetoresistive-based device includes a metal hard mask that is inert to a top electrode etch chemistry and that has low sputter yield during a magnetic stack sputter....
9023735 Etchant composition and manufacturing method for thin film transistor using the same  
An etchant composition includes ammonium persulfate (((NH4)2)S2O8), an azole-based compound, a water-soluble amine compound, a sulfonic acid-containing compound, a nitrate-containing compound, a...
9023712 Method for self-aligned removal of a high-K gate dielectric above an STI region  
By forming a trench isolation structure after providing a high-k dielectric layer stack, direct contact of oxygen-containing insulating material of a top surface of the trench isolation structure...
9024295 Nanowire photodetector and image sensor with internal gain  
A 1D nanowire photodetector device includes a nanowire that is individually contacted by electrodes for applying a longitudinal electric field which drives the photocurrent. An intrinsic radial...
9023228 Chromium-free pickle for plastic surfaces  
A pickling solution for the surface pre-treatment of plastic surfaces in preparation for metallization, the solution comprising a source of Mn(VII) ions; and an inorganic acid; wherein the...
9017564 Plasma etching method  
A plasma etching method performs plasma etching on a sample, which has laminated films containing a variable layer of a magnetic film, a barrier layer of an insulating material, and a fixed layer...
9018097 Semiconductor device processing with reduced wiring puddle formation  
A method of forming an interconnect structure for a semiconductor device includes forming a lower antireflective coating layer over a dielectric layer; forming an organic planarizing layer on the...
9018100 Damascene process using PVD sputter carbon film as CMP stop layer for forming a magnetic recording head  
Damascene processes using physical vapor deposition (PVD) sputter carbon film as a chemical mechanical planarization (CMP) stop layer for forming a magnetic recording head are provided. In one...
9011707 Etching method using an at least semi-solid media  
An etching method that uses an etch reactant retained within at least a semi-solid media (120, 220, 224, 230). The etch reactant media is applied to selectively etch a surface layer (106, 218,...
9006109 Semiconductor devices and methods for manufacturing semiconductor devices  
A method includes a step of performing a time multiplexed etching process, wherein the last etching step of the time multiplexed etching process is of a first time duration. After performing the...
9005464 Tool for manufacturing semiconductor structures and method of use  
A tool and method is provided for mixing multiple components and feeding a single blend of the multiple components into the tool. The method includes adjusting a concentration of etchant solution....
9005462 Method for manufacturing silicon carbide semiconductor device  
In a method for manufacturing a silicon carbide semiconductor device, a conductive layer is formed on a silicon carbide layer. The silicon carbide layer and the conductive layer react with each...
9006106 Method of removing a metal hardmask  
Methods of removing metal hardmasks in the presence of ultra low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film includes forming a pattern in a...
9006911 Method for forming patterns of dense conductor lines and their contact pads, and memory array having dense conductor lines and contact pads  
A method for forming patterns of dense conductor lines and their contact pads is described. Parallel base line patterns are formed over a substrate. Each of the base line patterns is trimmed....
9006865 Epitaxial growth substrate, semiconductor device, and epitaxial growth method  
In heteroepitaxially growing a group-III nitride semiconductor on a Si single crystal substrate, the occurrence of cracks initiating in the wafer edge portion can be suppressed. Region A is an...
9005472 Aqueous polishing agent and graft copolymers and their use in a process for polishing patterned and unstructured metal surfaces  
An aqueous polishing agent, comprising, as the abrasive, at least one kind of polymer particles (A) finely dispersed in the aqueous phase and having at their surface a plurality of at least one...
9006703 Method for reducing lateral extrusion formed in semiconductor structures and semiconductor structures formed thereof  
Aspects of the present invention relate to method for reducing lateral extrusion formed in semiconductor structures and semiconductor structures formed thereof. Various embodiments include a...
8999194 Etching solution capable of effectively reducing galvanic effect  
The present invention is to provide an etching solution capable of effectively reducing Galvanic effect, wherein the etching solution is obtained by way of dissolving an etchant and a nitrogen...
8991042 Method for fabricating semiconductor device  
A method for fabricating a semiconductor device includes (a) depositing an insulating film on a semiconductor substrate; (b) forming a recess in the insulating film; (c) depositing a conductive...
8993352 Plasma processing method and plasma processing apparatus  
A plasma processing method is used to etch a multilayered material having a stacked structure, in which a first magnetic layer, an insulating layer, a second magnetic layer, and a mask material...
8993444 Method to reduce dielectric constant of a porous low-k film  
Embodiments of the present invention generally relate to methods for lowering the dielectric constant of low-k dielectric films used in semiconductor fabrication. In one embodiment, a method for...
8993445 Selective removal of gate structure sidewall(s) to facilitate sidewall spacer protection  
Methods are provided for facilitating fabricating a semiconductor device by selectively etching a gate structure sidewall(s) to facilitate subsequent sidewall spacer isolation. The method...
8987062 Active thermal control for stacked IC devices  
Thermal conductivity in a stacked IC device can be improved by constructing one or more active temperature control devices within the stacked IC device. In one embodiment, the control devices are...
8986450 Substrate processing apparatus and method of manufacturing semiconductor device  
Generation of adhered materials in a space over a gas guide of a shower head is inhibited. A substrate processing apparatus includes a process chamber; a buffer chamber including a dispersion...
8986556 Heat assisted narrow pole design with trailing shield  
A TAMR (Thermally Assisted Magnetic Recording) write head is formed with a narrow pole tip, a trailing edge magnetic shield and, optionally, a plasmon shield. The narrow pole tipped write head...
8980750 Chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and a carbonate salt  
A chemical mechanical polishing (CMP) composition (Q) comprising (A) Inorganic particles, organic particles, or a mixture or composite thereof, wherein the particles are cocoon-shaped(B) a...
8980763 Dry-etch for selective tungsten removal  
Methods of selectively etching tungsten relative to silicon-containing films (e.g. silicon oxide, silicon carbon nitride and (poly)silicon) as well as tungsten oxide are described. The methods...
8980111 Sidewall image transfer method for low aspect ratio patterns  
A method for patterning a substrate is described. The patterning method may include conformally depositing a material layer over a pattern according to a conformal deposition process, selectively...
8980752 Method of forming a plurality of spaced features  
A method of forming a plurality of spaced features includes forming sacrificial hardmask material over underlying material. The sacrificial hardmask material has at least two layers of different...
8980121 Etching liquid for a copper/titanium multilayer thin film  
The present invention provides an etching liquid for a multilayer thin film containing a copper layer and a titanium layer, and a method of using it for etching a multilayer thin film containing a...
8974679 Method for manufacturing an opto-electronic component  
A method of producing an optoelectronic component comprises the steps of: A) providing a radiation-emitting layer sequence (1) having an active zone (13), which emits electromagnetic primary...
8974680 Pattern forming method  
A pattern forming method includes forming a coating film containing a hydrophilic first homopolymer having a first bonding group and a hydrophobic second homopolymer having a second bonding group...
8974692 Chemical mechanical polishing slurry compositions and method using the same for copper and through-silicon via applications  
Provided are novel chemical mechanical polishing (CMP) slurry compositions for polishing copper substrates and method of using the CMP compositions. The CMP slurry compositions deliver superior...
8974684 Synchronous embedded radio frequency pulsing for plasma etching  
Methods for etching a substrate are provided herein. In some embodiments, a method of etching a substrate may include generating a plasma by providing only a first RF signal having a first...
8975146 Trench isolation structures and methods for bipolar junction transistors  
Device structures, fabrication methods, and design structures for a bipolar junction transistor. A first isolation region is formed in a substrate to define a lateral boundary for an active device...
8975192 Method for manufacturing semiconductor device  
A method is provided for manufacturing a semiconductor device having a heat-resistant resin film with flip-chip connection structure using a solder bump or a gold bump and an epoxy resin compound...
8968588 Low electron temperature microwave surface-wave plasma (SWP) processing method and apparatus  
A surface wave plasma (SWP) source couples pulsed microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). To...
8969209 Method for removing oxide  
A method for removing oxide is described. A substrate is provided, including an exposed portion whereon a native oxide layer has been formed. A removing oxide process is performed to the substrate...
8969216 Method for single side texturing  
A method for single side texturing of a crystalline semiconductor substrate (10) comprises: providing a substrate (10), for example a semiconductor substrate, comprising a first surface (12) and a...
8968582 Device for electrical characterization of molecules using CNT-nanoparticle-molecule-nanoparticle-CNT structure  
A method of forming an electrode is disclosed. A carbon nanotube is deposited on a substrate. A section of the carbon nanotube is removed to form at least one exposed end defining a first gap. A...
8969217 Methods of treating semiconductor substrates, methods of forming openings during semiconductor fabrication, and methods of removing particles from over semiconductor substrates  
Some embodiments include methods of treating semiconductor substrates. The substrates may be exposed to one or more conditions that vary continuously. The conditions may include temperature...
8969203 Etching technique for creation of thermally-isolated microstructures  
There is described a method for creating a thermally-isolated microstructure on a slab of mono-crystalline silicon which uses a hybrid dry-then-wet etch technique that when controlled, can produce...