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7626264 |
Substrate for device bonding and method for manufacturing same
A substrate for device bonding is provided, which enables bonding of a device with high bond strength to an Au electrode formed on a substrate such as aluminum nitride by soldering the device at a...
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7625815 |
Reduced leakage interconnect structure
An improved semiconductor device interconnect structure comprising a dielectric layer recessed with respect to the conductive interconnect features. This structure and method reduces embedded...
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7618890 |
Methods for forming conductive structures and structures regarding same
A method for forming a metal/metal oxide structure that includes forming metal oxide regions, e.g. ruthenium oxide regions, at grain boundaries of a metal layer, e.g., platinum. Preferably, the...
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7615402 |
Electrostatically operated tunneling transistor
A transistor operated by changing the electrostatic potential of an island disposed between two tunnel junctions. The transistor has an island of material which has a band gap (e.g. semiconductor...
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7605078 |
Integration of a variable thickness copper seed layer in copper metallization
A method for forming a variable thickness Cu seed layer on a substrate for a subsequent Cu electrochemical plating process, where the Cu seed layer thickness profile improves uniformity of the...
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7588667 |
Depositing rhuthenium films using ionized physical vapor deposition (IPVD)
An iPVD system is programmed to deposit a barrier and/or seed layer using a Ru-containing material into high aspect ratio nano-size features on semiconductor substrates using a process which...
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7585766 |
Methods of manufacturing copper interconnect systems
An integrated circuit (IC) may include a substrate, a first dielectric layer adjacent the substrate, and at least one trench in the first dielectric layer. The IC may also include a metal liner...
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7585687 |
Electron emitter device for data storage applications and method of manufacture
A field emission device, which among other things may be used within an ultra-high density storage system, is disclosed. The emitter device includes an emitter electrode, an extractor electrode,...
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7582199 |
Plating method
Methods for depositing a metal or metal alloy on a substrate and articles made with the methods are described. The metal or metal alloy is deposited on the substrate electrolytically. The current...
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7566661 |
Electroless treatment of noble metal barrier and adhesion layer
A method of forming an EL-Cu enhanced noble metal layer begins with providing a semiconductor substrate in a reaction chamber, wherein the semiconductor substrate includes a trench etched into a...
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7560016 |
Selectively accelerated plating of metal features
To make a metal feature, a non-plateable layer is applied to a workpiece surface and then patterned to form a first plating region and a first non-plating region. Then, metal is deposited on the...
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7557047 |
Method of forming a layer of material using an atomic layer deposition process
Disclosed is a method of forming a layer of material using an atomic layer deposition (ALD) process in a process chamber of a process tool. In one illustrative embodiment, the method includes...
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7553746 |
Method for manufacturing electrodes on a semiconducting material of type II-VI or on a compound of this material
A method for manufacturing electrodes on a semiconducting material of type II-VI or on a compound of this material. The electrodes are preferably in gold or platinum and are formed by...
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7547627 |
Method for manufacturing semiconductor device
It is an object of the present invention to provide a semiconductor device including a wiring having a preferable shape. A manufacturing method includes the steps of forming a first conductive...
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7541284 |
Method of depositing Ru films having high density
A ruthenium film deposition method is disclosed. In one embodiment of the method, a first ruthenium film is deposited by using a PEALD process until a substrate is substantially entirely covered...
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7538035 |
Lapping of gold pads in a liquid medium for work hardening the surface of the pads
A method for work hardening gold contact pads is disclosed. The method includes providing gold contact pads, providing lapping pads, and placing the lapping pads in contact with the gold contact...
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7538031 |
Method of manufacturing a wiring substrate and an electronic instrument
A method of manufacturing a wiring substrate having a wiring layer formation step that includes: a first surface processing step in which surface processing is performed on a film formation area of...
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7527188 |
Self-encapsulated silver alloys for interconnects
Alloys of silver and an alloying element that diffuses to the surface of the high conductivity metal and is oxidizable to form an alloying element oxide such as beryllium are provided along with...
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7521361 |
Method for manufacturing wiring substrate
A method for manufacturing a wiring substrate by an electroless plating method that precipitates metal without using a plating resist is provided. The method includes the steps of: (a) providing a...
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7507665 |
Method of manufacturing electrical parts
A method of manufacturing electrical parts is provided, which method comprises the steps of: forming a photoresist on a part of the surface of a substrate; forming a metal layer on the surface of...
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7504333 |
Method of forming bit line of semiconductor device
A method of forming a conductive structure (e.g., bit line) of a semiconductor device includes forming a barrier metal layer on a semiconductor substrate in which structures are formed. An...
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7498262 |
Method of fabricating a thin film and metal wiring in a semiconductor device
A method for forming a thin film of a semiconductor device, which may include at least one of the following steps: Forming a Tantalum Nitride (TaN) film over a semiconductor substrate by atomic...
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7491646 |
Electrically conductive feature fabrication process
A process for fabricating an electrically conductive feature comprising: (a) liquid depositing a low viscosity composition comprising starting ingredients including an organic anine, a silver...
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7482691 |
Semiconductor device and method for fabricating the same
A semiconductor device and a method of fabricating a semiconductor device is provided. The semiconductor device can include a semiconductor substrate; an interlayer dielectric layer having a...
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7476618 |
Selective formation of metal layers in an integrated circuit
A method for enhancing the reliability of copper interconnects and/or contacts, such as the bottom of vias exposing top surfaces of buried copper, or at the top of copper lines just after CMP. The...
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7476615 |
Deposition process for iodine-doped ruthenium barrier layers
An iodine-doped ruthenium barrier layer for use with copper interconnects within integrated circuits is formed using novel, iodine-containing ruthenium precursors in an ALD or CVD process....
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7473640 |
Reactive gate electrode conductive barrier
A method, and corresponding transistor structure are provided for protecting the gate electrode from an underlying gate insulator. The method comprises: forming a gate insulator overlying a channel...
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7456101 |
Method for enhancing the nucleation and morphology of ruthenium films on dielectric substrates using amine containing compounds
Methods for depositing a ruthenium metal layer on a dielectric substrate are provided. The methods involve, for instance, exposing the dielectric substrate to an amine-containing compound, followed...
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7446037 |
Cladded silver and silver alloy metallization for improved adhesion and electromigration resistance
In semiconductor integrated circuit and device fabrication interconnect metallization is accomplished by a clad Ag deposited on a SiO2 level on a Si surface. The clad Ag has a layer of an alloy of...
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7442633 |
Decoupling capacitor for high frequency noise immunity
Systems and methods are provided for an on-chip decoupling device and method. One aspect of the present subject matter is a capacitor. One embodiment of the capacitor includes a substrate, a high K...
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7439178 |
Technique for stable processing of thin/fragile substrates
A semiconductor on insulator (SOI) wafer includes a semiconductor substrate having first and second main surfaces opposite to each other. A dielectric layer is disposed on at least a portion of the...
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7436066 |
Semiconductor element
It is an object of the present invention to provide a highly reliable and high-quality semiconductor element by effectively preventing the migration of silver to a nitride semiconductor when an...
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7435679 |
Alloyed underlayer for microelectronic interconnects
Apparatus and methods of fabricating a microelectronic interconnect having an underlayer which acts as both a barrier layer and a seed layer. The underlayer is formed by co-depositing a noble metal...
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7435678 |
Method of depositing noble metal electrode using oxidation-reduction reaction
Provided is a method of depositing a noble metal layer using an oxidation-reduction reaction. The method includes flowing a noble metal source gas, an oxidizing gas, and a reducing gas into a...
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7432202 |
Method of substrate manufacture that decreases the package resistance
A method includes forming a coating on a land contact of a package substrate, the coating including a first material disposed between a first layer and a second layer, each of the first layer and...
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7410900 |
Metallisation
This invention relates to photosensitive organometallic compounds which are used in the production of metal deposits. In particular, this invention relates to photosensitive organometallic...
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7405153 |
Method for direct electroplating of copper onto a non-copper plateable layer
A process for the formation of an interconnect in a semiconductor structure including the steps of forming a dielectric layer on a substrate, forming a first barrier layer on the dielectric layer,...
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7400042 |
Substrate with adhesive bonding metallization with diffusion barrier
A metallization layer that includes a tantalum layer located on the component, a tantalum silicide layer located on the tantalum layer, and a platinum silicide layer located on the tantalum...
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7396766 |
Low-temperature chemical vapor deposition of low-resistivity ruthenium layers
A low-temperature chemical vapor deposition process for depositing of a low-resistivity ruthenium metal layers that can be used as barrier/seed layers in Cu metallization schemes. The method...
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7393785 |
Methods and apparatus for forming rhodium-containing layers
A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula L y RhY z is provided. Also provided is a chemical vapor co-deposited...
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7390678 |
Method for fabricating semiconductor device
A PLZT film ( 30 ) is formed as the material film of a capacitor dielectric film and a top electrode film ( 31 ) is formed on the PLZT film ( 30 ). The top electrode film ( 31 ) comprises two IrO x...
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7365441 |
Semiconductor device fabricating apparatus and semiconductor device fabricating method
A semiconductor device fabricating method comprises a substrate forming step of forming a plurality of separate conductive pads 20 on an adhesive layer included in an adhesive sheet 50 , and a...
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7358188 |
Method of forming conductive metal silicides by reaction of metal with silicon
The invention includes methods of forming conductive metal silicides by reaction of metal with silicon. In one implementation, such a method includes providing a semiconductor substrate comprising...
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7344982 |
System and method of selectively depositing Ruthenium films by digital chemical vapor deposition
A chemical vapor deposition reaction system converts a reactant precursor, which includes the metal Ruthenium, to a vapor during a chemical reaction in order to deposit the metal on a semiconductor...
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7341947 |
Methods of forming metal-containing films over surfaces of semiconductor substrates
The invention includes a method of forming a metal-containing film over a surface of a semiconductor substrate. The surface is exposed to a supercritical fluid. The supercritical fluid has H 2 , at...
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7341946 |
Methods for the electrochemical deposition of copper onto a barrier layer of a work piece
Methods are provided for electrochemically depositing copper on a work piece. One method includes the step of depositing overlying the work piece a barrier layer having a surface and subjecting the...
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7338884 |
Interconnecting substrate for carrying semiconductor device, method of producing thereof and package of semiconductor device
An interconnecting substrate for carrying a semiconductor device, comprising: an insulating layer; an interconnection set on an obverse surface of the insulating layer; an electrode which is set on...
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7335591 |
Method for forming three-dimensional structures on a substrate
A method of forming a resist layer on a non-planar surface of a substrate includes placing the non-planar surface into an electrophoretic resist. While the non-planar surface is in the...
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7332435 |
Silicide structure for ultra-shallow junction for MOS devices
A method of forming a semiconductor device comprising: forming a gate dielectric layer over a channel region; forming a gate electrode on the gate dielectric layer; forming source/drain regions...
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7300815 |
Method for fabricating a gold contact on a microswitch
Described is a process to pattern adhesion and top contact layers in such a way that at least some portion of the top contact layers overlaps the adhesion layer, while another portion of the top...
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