Matches 201 - 250 out of 305 < 1 2 3 4 5 6 7 >
Match Document Document Title
6323081 Diffusion barrier layers and methods of forming same  
A method for use in the fabrication of integrated circuits includes providing a substrate assembly having a surface and forming a barrier layer over at least a portion of the surface. The barrier...
6319765 Method for fabricating a memory device with a high dielectric capacitor  
The present invention provides a method for fabricating a ferroelectric memory device to reduce manufacturing cost and to obtain the electric characteristic of capacitor. The method comprises the...
6319741 Method for fabricating metal interconnections and wiring board having the metal interconnections  
A Ni film for a ground metal film is formed on an insulating substrate by direct current magnetron sputtering process, which prevents occurrence of minute protrusions on a surface of the ground...
6306754 Method for forming wiring with extremely low parasitic capacitance  
A method for creating metal layers in a microelectronic device where air is the primary dielectric separating adjacent metal features within a layer. A temporary structural solid, such as a...
6297138 Method of depositing a metal film onto MOS sensors  
A method for depositing a metal film onto the semiconductor substrate and insulator of a MOS sensor is provided. The method utilizes a laser ablation technique to deposit metal films having a...
6297146 Low resistivity semiconductor barrier layer manufacturing method  
A semiconductor, and manufacturing method therefor, is provided with a barrier/adhesion layer, having cobalt, nickel, or palladium for semiconductors having conductive materials of copper, silver...
6297157 Time ramped method for plating of high aspect ratio semiconductor vias and channels  
A method is provided for forming conductive layers in semiconductor vias by using forward and reverse pulses during the electroplating process which have time intervals between pulses which...
6294396 Monitoring barrier metal deposition for metal interconnect  
The barrier effectiveness of a barrier material with respect to a conductive material is evaluated by providing a silicon substrate and then etching said silicon substrate to define an opening...
6291347 Method and system for constructing semiconductor devices  
A system for constructing semiconductor devices is disclosed. The system comprises a wafer (102) having semiconductor devices (104), a bevel (108), an edge (110), a frontside (111), and a backside...
6284654 Chemical vapor deposition process for fabrication of hybrid electrodes  
A method of fabricating an electrode structure for a ferroelectric device structure including a ferroelectric material, involving chemical vapor deposition of a hybrid electrode constituting a...
6281125 Methods for preparing ruthenium oxide films  
The present invention provides methods for the preparation of ruthenium oxide films from liquid ruthenium complexes of the formula (diene)Ru(CO) 3 wherein "diene" refers to linear, branched, or...
6271136 Multi-step plasma process for forming TiSiN barrier  
This invention relates to a robust method of fabrication used for semiconductor integrated circuit devices, and more specifically to the formation of an improved copper metal diffusion barrier...
6265300 Wire bonding surface and bonding method  
A bonding pad structure for use with compliant dielectric materials and a method for wire bonding is described in which a rigid layer is formed between the bonding pad and the compliant dielectric...
6261967 Easy to remove hard mask layer for semiconductor device fabrication  
A method for forming a patterned shape from a noble metal, in accordance with the present invention, includes forming a noble metal layer over a dielectric layer and patterning a hard mask layer on...
6255213 Method of forming a structure upon a semiconductive substrate  
An electrically conductive apparatus includes, a) an electrically non-conducting substrate, the substrate having a base surface and an adjacent elevated surface, the elevated surface being spaced...
6251779 Method of forming a self-aligned silicide on a semiconductor wafer  
This invention provides a method of forming a self-aligned silicide of a semiconductor wafer, the surface of the semiconductor wafer comprising at least one silicon device. A cobalt-containing...
6239028 Methods for forming iridium-containing films on substrates  
A method of forming an iridium-containing film on a substrate, such as a semiconductor wafer using complexes of the formula L y IrX z , wherein: each L group is independently a neutral or anionic...
6239005 Method of forming epitaxially grown semiconductor layer on metal layer and light emitting semiconductor device comprising said semiconductor layer  
In a method of forming a single crystal semiconductor directly on a metal layer, a metal layer is epitaxially grown on a surface an electrically insulating substrate having a single crystal...
6218297 Patterning conductive metal layers and methods using same  
The present invention provides a method for forming a discontinuous conductive layer in the fabrication of integrated circuits. The method includes providing a substrate assembly having a surface...
6204175 Method of depositing a smooth conformal aluminum film on a refractory metal nitride layer  
A method of forming a conformal aluminum film on a refractory metal nitride layer is provided and includes positioning a substrate having the refractory metal nitride layer thereon within a...
6190529 Method for plating gold to bond leads on a semiconductor substrate  
A method for plating gold to a plurality of bond leads on a substrate is disclosed. The method first extends a plating line from a plating loop on the edge of the substrate to a bond area in the...
6174766 Semiconductor device and method of manufacturing the semiconductor device  
A method for manufacturing a semiconductor device which ensures the reliability of the connection between a metal wiring of the device to a MOS transistor of the device and which enables the metal...
6162712 Platinum source compositions for chemical vapor deposition of platinum  
A platinum source reagent liquid solution, comprising: (i) at least one platinum source compound selected from the group consisting of compounds of the formulae: (A) RCpPt(IV)R' 3 compounds, of...
6159846 Method of metallization in semiconductor devices  
The method of metallization in semiconductor devices provides a substrate having a conducting region and having an insulating layer formed on the substrate. The insulating layer has a contact hole...
6150262 Silver-gold wire for wire bonding  
A wire and method of making the wire for use in conjunction with the fabrication of semiconductor devices which consists essentially of forming one of an alloy or composite of from a finite amount...
6150249 Methods of forming niobium-near noble metal contact structures for integrated circuits  
Integrated circuit contact structures are fabricated by forming a first layer comprising niobium (Nb) on a silicon substrate and forming a second layer comprising a near noble metal on the first...
6127268 Process for fabricating a semiconductor device with a patterned metal layer  
A process is disclosed for fabricating a semiconductor device with a patterned metal layer (9). A layer (7) of a material with poor adhesion capability to the metal is deposited on the surface of a...
6127257 Method of making a contact structure  
An improved contact structure and process for forming an improved contact structure for a semiconductor device. A metal (14) is formed on a first metal layer (12) positioned on a substrate (10) The...
6106677 Method of creating low resistance contacts in high aspect ratio openings by resputtering  
A method of producing a low resistance contact in an opening carried in a substrate is comprised of the steps of forming a first layer of conductive material along a portion of the walls of the...
6096565 Multi-layer glass ceramic module with superconductor wiring  
A multilayer ceramic substrate electronic component is provided having high temperature superconductor material circuitry. The high temperature superconductor material is preferably...
6093643 Electrically conductive projections and semiconductor processing method of forming same  
An electrically conductive apparatus includes, a) an electrically non-conducting substrate, the substrate having a base surface and an adjacent elevated surface, the elevated surface being spaced...
6090704 Method for fabricating a high dielectric capacitor  
A method for fabricating a semiconductor device using a high dielectric material as a dielectric film of a capacitor wherein an etch stopping layer such as BST having a good dry etch selectivity...
6090710 Method of making copper alloys for chip and package interconnections  
A method of making Copper alloys containing between 0.01 and 10 weight percent of at least one alloying element selected from carbon, indium and tin is disclosed for improved electromigration...
6074945 Methods for preparing ruthenium metal films  
The present invention provides methods for the preparation of ruthenium metal films from liquid ruthenium complexes of the formula (diene)Ru(CO) 3 wherein "diene" refers to linear, branched, or...
6069076 Method of making a semiconductor device with changeable interconnection  
A method of manufacturing a semiconductor device having the steps of: preparing a semiconductor device structure having an interconnection structure including a pair of electrically separated...
6063705 Precursor chemistries for chemical vapor deposition of ruthenium and ruthenium oxide  
A method is provided for forming a film of ruthenium or ruthenium oxide on the surface of a substrate by employing the techniques of chemical vapor deposition to decompose precursors of ruthenium...
6054331 Apparatus and methods of depositing a platinum film with anti-oxidizing function over a substrate  
A platinum film, which is used as a bottom electrode for a capacitor in a DRAM cell or a non-volatile ferroelectric memory cell, is formed in two separate processes, wherein a first thickness...
6043150 Method for uniform plating of dendrites  
The present invention provides a novel method for forming uniform dendrites, on circuit features that does not result in large, elongated dendrites along the edges of the circuit features. The...
6037256 Method for producing a noble metal-containing structure on a substrate, and semiconductor component having such a noble metal-containing structure  
A method for producing a noble metal-containing structure on a substrate, and a semiconductor component having such a noble metal-containing structure, include introducing a noble metal into a...
6030877 Electroless gold plating method for forming inductor structures  
The present invention provides a method of manufacturing an inductor element 46 using an electroless Au plating solution. The invention has three embodiments for forming the inductor. In the first...
6030895 Method of making a soft metal conductor  
A soft metal conductor for use in a semiconductor device that has an upper-most layer consisting of grains having grain sizes sufficiently large so as to provide a substantially scratch-free...
6025205 Apparatus and methods of forming preferred orientation-controlled platinum films using nitrogen  
Platinum film orientation-controlled to (111), (200) and/or (220) are provided by depositing the platinum film under an atmosphere containing nitrogen as well as an inert gas (Ar, Ne, Kr, Xe) on a...
6023100 Metallization stack structure to improve electromigration resistance and keep low resistivity of ULSI interconnects  
There is provided an improved metallization stack structure so as to produce a higher electromigration resistance and yet maintain a relatively low resistivity. The metallization stack structure...
6013572 Methods of fabricating and testing silver-tin alloy solder bumps  
Silver-tin alloy solder bumps are fabricated by forming a masked underbump metallurgy layer on a microelectronic substrate, to define exposed portions of the underbump metallurgy layer, plating...
5994206 Method of forming a high conductivity metal interconnect using metal gettering plug and system performing the method  
A method and system for providing a via structure for a high conductivity metal of a integrated circuit is disclosed. In a first aspect the method and system comprises etching a photoresist...
5989993 Method for galvanic forming of bonding pads  
Method for the preparation of electrodeposited or galvanically deposited bumps for the bonding of integrated circuits, characterized by two subsequent metal depositions, deposited without an...
5985692 Process for flip-chip bonding a semiconductor die having gold bump electrodes  
A method for flip-chip bonding an integrated circuit die to a substrate. The method includes the steps of providing the integrated circuit die with at least one gold bump, forming a barrier layer...
5981390 Method for depositing a platinum layer on a silicon wafer  
The present invention relates to a method of depositing a platinum thin-film on a silicon wafer. The method includes the steps of depositing a platinum layer on an insulating oxide layer under an...
5981311 Process for using a removeable plating bus layer for high density substrates  
A method of electroplating a high density integrated circuit (IC) substrate using a removable plating bus including the steps of providing an IC substrate made of nonconductive material having a...
5972790 Method for forming salicides  
Titanium is deposited onto a semiconductor interconnect to form a salicide structure by plasma-enhanced chemical vapor deposition. The reactant gases, including titanium tetrachloride, hydrogen and...
Matches 201 - 250 out of 305 < 1 2 3 4 5 6 7 >