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7608539 |
ALD method and apparatus
A method and an apparatus for executing efficient and cost-effective Atomic Layer Deposition (ALD) at low temperatures are presented. ALD films such as oxides and nitrides are produced at low...
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7598170 |
Plasma-enhanced ALD of tantalum nitride films
Methods of controllably producing conductive tantalum nitride films are provided. The methods comprise contacting a substrate in a reaction space with alternating and sequential pulses of a...
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7595263 |
Atomic layer deposition of barrier materials
Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate...
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7592255 |
Fabricating arrays of metallic nanostructures
A patterned array of metallic nanostructures and fabrication thereof is described. A plurality of nanowires is grown on a substrate, the plurality of nanowires being laterally arranged on the...
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7589020 |
Method for depositing titanium nitride films for semiconductor manufacturing
Embodiments of the invention describe TiN deposition methods suitable for high volume manufacturing of semiconductor devices on large patterned substrates (wafers). One embodiment describes a...
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7589017 |
Methods for growing low-resistivity tungsten film
Improved methods for depositing low resistivity tungsten films are provided. The methods involve depositing a tungsten nucleation layer on a substrate and then depositing a tungsten bulk layer over...
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7585769 |
Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE
A method of suppressing parasitic particle formation in a metal organic chemical vapor deposition process is described. The method may include providing a substrate to a reaction chamber, and...
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7585683 |
Methods of fabricating ferroelectric devices
A method of fabricating a ferroelectric device includes forming a ferroelectric layer on a substrate in a reaction chamber. An inactive gas is provided into the reaction chamber while unloading the...
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7579285 |
Atomic layer deposition method for depositing a layer
The invention is related to an ALD method for depositing a layer including the steps of a) providing a semiconductor substrate in a reactor; b) providing a pulse of a first precursor gas into the...
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7579276 |
Substrate processing apparatus and method of manufacturing semiconductor device
To prevent particles from generating by reducing a contact-gas area and improve a purge efficiency by reducing a flow passage capacity. There is provided a substrate processing apparatus,...
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7572731 |
Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same
The present invention provides metal-containing compounds that include at least one β-diketiminate ligand, and methods of making and using the same. In some embodiments, the metal-containing...
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7566661 |
Electroless treatment of noble metal barrier and adhesion layer
A method of forming an EL-Cu enhanced noble metal layer begins with providing a semiconductor substrate in a reaction chamber, wherein the semiconductor substrate includes a trench etched into a...
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7560581 |
Vapor deposition of tungsten nitride
Tungsten nitride films were deposited on heated substrates by the reaction of vapors of tungsten bis(alkylimide)bis(dialkylamide) and a Lewis base or a hydrogen plasma. For example, vapors of...
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7550385 |
Amine-free deposition of metal-nitride films
A method for forming a metal carbide layer begins with providing a substrate, an organometallic precursor material, at least one doping agent such as nitrogen, and a plasma such as a hydrogen...
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7547632 |
Methods of forming metal layers in the fabrication of semiconductor devices
A metal deposition processing apparatus includes a first processing chamber configured for holding a semiconductor substrate therein. A second processing chamber is configured for holding the...
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7547631 |
Organometallic compounds
Organometallic compounds containing a phosphoamidinate ligand are provided. Such compounds are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing...
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7544535 |
Method for manufacturing semiconductor laser element
The method for manufacturing a semiconductor laser element according to the present invention has the steps of: forming a semiconductor laminated structure having an active layer composed of a...
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7524766 |
Method for manufacturing semiconductor device and substrate processing apparatus
To obtain a conductive metal film having superior step coverage, adhesiveness, and high productivity. A conductive metal film or metal oxidized film suitable as a capacitor electrode is formed on a...
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7524765 |
Direct tailoring of the composition and density of ALD films
A method comprising introducing an organometallic precursor according to a first set of conditions in the presence of a substrate; introducing the organometallic precursor according to a different...
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7521348 |
Method of fabricating semiconductor device having fine contact holes
A method for fabricating a semiconductor device having fine contact holes is exemplarily disclosed. The method includes forming an isolation layer defining active regions on a semiconductor...
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7517800 |
Semiconductor device and manufacturing method thereof
A manufacturing method of a semiconductor device including a TiN film, including a deposition step of forming a TiN film by the CVD method, an anneal step of performing a heat treatment to the...
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7498272 |
Method of depositing rare earth oxide thin films
The present invention concerns a process for depositing rare earth oxide thin films, especially yttrium, lanthanum and gadolinium oxide thin films by an ALD process, according to which invention...
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7491645 |
Method for manufacturing a semiconductor device
A method for manufacturing a semiconductor device includes: forming a protrusion-patterned layer on a substrate, the protrusion-patterned layer including a plurality of separated protrusions, each...
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7488683 |
Chemical vapor deposited film based on a plasma CVD method and method of forming the film
A method of forming a vapor deposited film of a silicon oxide on the surface of a substrate by holding the substrate to be treated in a plasma-treating chamber, and effecting the treatment with a...
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7482289 |
Methods and apparatus for depositing tantalum metal films to surfaces and substrates
Methods and an apparatus are disclosed for depositing tantalum metal films in next-generation solvent fluids on substrates and/or deposition surfaces useful, e.g., as metal seed layers. Deposition...
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7459395 |
Method for purifying a metal carbonyl precursor
A method of purifying a metal carbonyl precursor in a metal precursor vaporization system where the metal carbonyl precursor comprises a metal particulate impurity. The method includes flowing a...
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7456101 |
Method for enhancing the nucleation and morphology of ruthenium films on dielectric substrates using amine containing compounds
Methods for depositing a ruthenium metal layer on a dielectric substrate are provided. The methods involve, for instance, exposing the dielectric substrate to an amine-containing compound, followed...
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7452811 |
Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same
In a method for forming a wiring of a semiconductor device using an atomic layer deposition, an insulating interlayer is formed on a substrate. Tantalum amine derivatives represented by a chemical...
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7442643 |
Methods of forming conductive elements using organometallic layers and flowable, curable conductive materials
A conductive element is formed on a substrate by forming an organometallic layer on at least a portion of a surface of the substrate, heating a portion of the organometallic layer, and removing an...
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7439181 |
Method for processing interior of vapor phase deposition apparatus, method for depositing thin film and method for manufacturing semiconductor device
A method for depositing a metal compound film on the wafer by using a vapor phase deposition apparatus 100 , including: forming a thin film on the wafer in an interior of the vapor phase...
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7439180 |
Dispenser system for atomic beam assisted metal organic chemical vapor deposition (MOCVD)
A dispenser system for use in atomic beam assisted metal organic chemical vapor deposition is provided as well as a method of depositing an ultra-thin film using the same. The inventive dispenser...
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7439179 |
Healing detrimental bonds in deposited materials
A method for healing detrimental bonds in deposited materials, for example porous, low-k dielectric materials, including oxydatively processing a deposited material, processing the deposited...
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7435678 |
Method of depositing noble metal electrode using oxidation-reduction reaction
Provided is a method of depositing a noble metal layer using an oxidation-reduction reaction. The method includes flowing a noble metal source gas, an oxidizing gas, and a reducing gas into a...
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7432195 |
Method for integrating a conformal ruthenium layer into copper metallization of high aspect ratio features
A method of integrated processing of a patterned substrate for copper metallization. The method includes providing the patterned substrate containing a via and a trench in a vacuum processing tool,...
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7407875 |
Low resistance contact structure and fabrication thereof
Embodiments of the present invention provide a method of fabricating a contact structure in a layer of dielectric material between a semiconductor device and a back-end-of-line interconnect. The...
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7393785 |
Methods and apparatus for forming rhodium-containing layers
A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula L y RhY z is provided. Also provided is a chemical vapor co-deposited...
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7368402 |
Systems and methods for forming tantalum oxide layers and tantalum precursor compounds
A method of forming (and apparatus for forming) a tantalum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and a tantalum...
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7354842 |
Methods of forming conductive materials
The invention includes a method of forming a metal-comprising mass for a semiconductor construction. A semiconductor substrate is provided, and a metallo-organic precursor is provided proximate the...
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7351658 |
Process for producing yttrium oxide thin films
This invention concerns a process for producing oxide thin film on a substrate by an ALD type process. According to the process, alternating vapour-phase pulses of at least one metal source...
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7348274 |
Method of aligning carbon nanotubes and method of manufacturing field emission device using the same
A method of aligning carbon nanotubes (CNTs) and a method of manufacturing a field emission device (FED) using the same, wherein a mold having an intaglio pattern is prepared, an aqueous solution...
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7344913 |
Spin on memory cell active layer doped with metal ions
A method of making organic memory cells made of two electrodes with a controllably conductive media between the two electrodes is disclosed. The controllably conductive media contains an active...
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7341948 |
Method of making a semiconductor structure with a plating enhancement layer
Disclosed is a method of making a semiconductor structure, wherein the method includes forming an interlayer dielectric (ILD) layer on a semiconductor layer, forming a conductive plating...
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7341944 |
Methods for synthesis of metal nanowires
Methods for synthesizing metal nanowires are provided. A metalorganic layer is deposited on a substrate as a thin film. The thermal decomposition of the metalorganic thin film in the presence of...
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7338902 |
Epitaxial growth method and substrate for epitaxial growth
An epitaxial growth method includes: supporting a substrate for growth (for example, an InP substrate) with a substrate supporter, growing a compound semiconductor layer comprising 3 or 4 elements...
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7338900 |
Method for forming tungsten nitride film
A method for forming a tungsten nitride film including a first material gas supply step of supplying a first material gas composed of a tungsten compound gas, a reduction step of supplying a...
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7329615 |
Atomic layer deposition method of forming an oxide comprising layer on a substrate
This invention includes atomic layer deposition methods of depositing oxide comprising layers on substrates. In one implementation, a substrate is positioned within a deposition chamber. A first...
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7329606 |
Semiconductor device having nanowire contact structures and method for its fabrication
A semiconductor device having small electrical contacts to impurity doped regions and a method for fabrication of such a device are provided. In accordance with one embodiment of the invention the...
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7323412 |
Atomic layer deposition methods, and methods of forming materials over semiconductor substrates
The invention includes methods in which at least two different precursors are flowed into a reaction chamber at different and substantially non-overlapping times relative to one another to form a...
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7312140 |
Film forming method
A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form...
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7300873 |
Systems and methods for forming metal-containing layers using vapor deposition processes
A method of forming (and an apparatus for forming) a metal containing layer on a substrate, particularly a semiconductor substrate or substrate assembly for use in manufacturing a semiconductor or...
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