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7399716 |
Precursor for hafnium oxide layer and method for forming hafnium oxide film using the precursor
A hafnium oxide precursor and a method for forming a hafnium oxide layer using the precursor are provided. The hafnium oxide precursor contains a nitrogen compound bound to HfCl 4 .
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7399499 |
Methods of gas delivery for deposition processes and methods of depositing material on a substrate
Methods for depositing material onto workpieces, methods of controlling the delivery of gases in deposition processes, and apparatus for depositing materials onto workpieces. One embodiment of a...
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7396766 |
Low-temperature chemical vapor deposition of low-resistivity ruthenium layers
A low-temperature chemical vapor deposition process for depositing of a low-resistivity ruthenium metal layers that can be used as barrier/seed layers in Cu metallization schemes. The method...
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7396755 |
Process and integration scheme for a high sidewall coverage ultra-thin metal seed layer
The present invention provides a method of forming a metal seed layer 100 . The method includes physical vapor deposition of seed metal 200 within an opening 140 located in a dielectric layer ...
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7396570 |
Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers
Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCl 4 and at least one silane are first fed to the chamber at or above a first...
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7393784 |
Method of manufacturing suspension structure and chamber
A method of manufacturing a suspension structure including providing a substrate, forming a hole and a sacrificial layer filling the hole on the substrate, forming a patterned photoresist layer on...
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7393783 |
Methods of forming metal-containing structures
The invention includes methods of forming metal-containing layers. The layers can, in particular aspects, consist essentially of metal, or consist of metal. The desired layers can be formed by...
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7393778 |
Semiconductor device and method for fabricating the same
A semiconductor device and a method for fabricating the same in which a protective oxide layer is formed on an insulating interlayer gap are disclosed. An example semiconductor device includes a...
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7393765 |
Low temperature CVD process with selected stress of the CVD layer on CMOS devices
Device-enhancing coatings are deposited on CMOS devices by successively masking with photoresist each one of the sets of N-channel and P-channel devices while unmasking or leaving unmasked the...
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7393736 |
Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics
The use of atomic layer deposition (ALD) to form a nanolaminate dielectric of zirconium oxide (ZrO 2 ), hafnium oxide (HfO 2 ) and tin oxide (SnO 2 ) acting as a single dielectric layer with a...
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7390743 |
Methods for forming a structured tungsten layer and forming a semiconductor device using the same
A method for forming a structured tungsten layer and a method for forming a semiconductor device using the same. A first tungsten layer is formed with an atomic layer deposition (ALD) method. A...
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7384867 |
Formation of composite tungsten films
Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and...
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7384833 |
Stress liner for integrated circuits
In one embodiment, a self-aligned contact (SAC) trench structure is formed through a dielectric layer to expose an active region of a MOS transistor. The SAC trench structure not only exposes the...
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7378328 |
Method of fabricating memory device utilizing carbon nanotubes
A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a...
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7371683 |
Method for carrying object to be processed
A method for carrying an object to be processed used for a processing apparatus which comprises a plurality of process chambers including a specific process chamber for a process in which the...
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7371586 |
Superconductor and process for producing the same
A superconductor and a method for producing the same are provided. The method for producing a superconductor includes the step of forming a superconducting layer on a base layer by performing a...
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7368384 |
Film formation apparatus and method of using the same
A method of using a film formation apparatus for a semiconductor process includes a step of removing a by-product film deposited on an inner surface of a reaction chamber of the film formation...
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7368382 |
Atomic layer deposition methods
The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic...
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7368381 |
Methods of forming materials
The invention includes methods of forming films over substrates. A substrate is provided within a reaction chamber, and a mixture is also provided within the chamber. The mixture includes a...
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7368368 |
Multi-chamber MOCVD growth apparatus for high performance/high throughput
In one embodiment the present invention is a method of conducting multiple step multiple chamber chemical vapor deposition while avoiding reactant memory in the relevant reaction chambers. The...
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7368359 |
Method for manufacturing semiconductor substrate and semiconductor substrate
A semiconductor substrate ( 100 ) is acquired by forming a mask with a target thickness on a major surface of a single-crystal silicon substrate, implanting oxygen ions to the major surface at a...
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7365014 |
Reticle fabrication using a removable hard mask
We have reduced the critical dimension bias for reticle fabrication. Pattern transfer to the radiation-blocking layer of the reticle substrate essentially depends upon use of a hard mask to which...
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7361595 |
Transition metal thin film forming method
A semiconductor substrate is placed in a predetermined processing vessel, and oxygen gas activated by, e.g. conversion into a plasma is supplied onto an insulating film. The surfaces of an...
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7358197 |
Method for avoiding polysilicon film over etch abnormal
The method for avoiding polysilicon film over etch abnormal includes cleaning a semiconductor substrate. A dielectric layer is formed on the substrate. Subsequently, a first silicon source gas at a...
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7358191 |
Method for decreasing sheet resistivity variations of an interconnect metal layer
According to one exemplary embodiment, a method includes a step of forming a number of trenches in a dielectric layer, where the dielectric layer is situated over a wafer. The method further...
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7358187 |
Coating process for patterned substrate surfaces
The present invention provides a coating process for patterned substrate surfaces, in which a substrate ( 101 ) is provided, the substrate having a surface ( 105 ) which is patterned in a substrate...
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7354873 |
Method for forming insulation film
A method for forming an insulation film having filling property on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound...
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7351668 |
Film formation method and apparatus for semiconductor process
An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a...
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7344983 |
Clustered surface preparation for silicide and metal contacts
A cluster tool is provided for the implementing of a clustered and integrated surface pre-cleaning of the surface of semiconductor devices. More particularly, there is provided a cluster tool and a...
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7344982 |
System and method of selectively depositing Ruthenium films by digital chemical vapor deposition
A chemical vapor deposition reaction system converts a reactant precursor, which includes the metal Ruthenium, to a vapor during a chemical reaction in order to deposit the metal on a semiconductor...
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7344974 |
Metallization method of semiconductor device
A method for forming a metallization contact in a semiconductor device includes the steps of: (a) forming an insulating layer on a semiconductor substrate including an active device region; (b)...
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7338901 |
Method of preparing a film layer-by-layer using plasma enhanced atomic layer deposition
A method for forming a thin film on a substrate layer by layer using plasma enhanced atomic layer deposition is described. The method comprises using a low power reduction step for at least one...
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7338900 |
Method for forming tungsten nitride film
A method for forming a tungsten nitride film including a first material gas supply step of supplying a first material gas composed of a tungsten compound gas, a reduction step of supplying a...
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7338887 |
Plasma control method and plasma control apparatus
A method that controls the distribution of plasma generated in a vacuum chamber, for example, as part of a plasma thin film deposition or plasma etching process. For thin film deposition, the...
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7332425 |
Simultaneous deposition and etch process for barrier layer formation in microelectronic device interconnects
The present invention provides a method of forming a interconnect barrier layer 100 . In the method, physical vapor deposition of barrier material 200 is performed within an opening 140 ...
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7329947 |
Heat treatment jig for semiconductor substrate
When a two-division structure heat treatment jig for semiconductor substrate that includes a silicon first jig that comes into direct contact with a semiconductor substrate that is heat treated and...
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7326656 |
Method of forming a metal oxide dielectric
A semiconductor device comprising a semiconductor body having a top surface and a first and second laterally opposite sidewalls as formed on an insulating substrate is claimed. A gate dielectric is...
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7323412 |
Atomic layer deposition methods, and methods of forming materials over semiconductor substrates
The invention includes methods in which at least two different precursors are flowed into a reaction chamber at different and substantially non-overlapping times relative to one another to form a...
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7323411 |
Method of selective tungsten deposition on a silicon surface
In one embodiment, a selective tungsten deposition process includes the steps of pre-flowing silane into a deposition chamber, pumping down the chamber, and then selectively depositing tungsten on...
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7314790 |
Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strain
The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a Si-containing layer having a <110> crystal orientation and a biaxial...
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7312163 |
Atomic layer deposition methods, and methods of forming materials over semiconductor substrates
The invention includes methods in which at least two different precursors are flowed into a reaction chamber at different and substantially non-overlapping times relative to one another to form a...
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7311942 |
Method for binding halide-based contaminants during formation of a titanium-based film
A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to...
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7306956 |
Variable temperature and dose atomic layer deposition
A variable temperature and/or reactant dose atomic layer deposition (VTD-ALD) process modulates ALD reactor conditions (e.g., temperature, flow rates, etc.) during growth of a film (e.g., metallic)...
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7303991 |
Atomic layer deposition methods
The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic...
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7300873 |
Systems and methods for forming metal-containing layers using vapor deposition processes
A method of forming (and an apparatus for forming) a metal containing layer on a substrate, particularly a semiconductor substrate or substrate assembly for use in manufacturing a semiconductor or...
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7300859 |
Atmospheric glow discharge with concurrent coating deposition
A plasma is produced in a treatment space ( 58 ) by diffusing a plasma gas at atmospheric pressure and subjecting it to an electric field created by two metallic electrodes ( 54,56 ) separated by a...
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7299104 |
Substrate processing apparatus and substrate transferring method
Shock waves occurring when opening a gate valve between two vacuum chambers and peeling of particles by a viscous force taking place when a gas is supplied into a vacuum chamber are necessary to be...
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7297634 |
Method and apparatus for semiconductor device and semiconductor memory device
Method and apparatus on charges injection using piezo-ballistic-charges injection mechanism are provided for semiconductor device and nonvolatile memory device. The device comprises a strain...
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7297558 |
Method of manufacturing semiconductor device
A W plug ( 24 ) is formed and a W oxidation preventing barrier metal film ( 25 ) is formed thereon. After that, an SiON film ( 27 ) thinner than the W oxidation preventing barrier metal film ( 25 )...
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7285494 |
Multiple stage electroless deposition of a metal layer
A multiple stage method of electrolessly depositing a metal layer is presented. This method may have the two main stages of first forming a thin metal layer on a metal surface using an electroless...
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