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7399716 Precursor for hafnium oxide layer and method for forming hafnium oxide film using the precursor  
A hafnium oxide precursor and a method for forming a hafnium oxide layer using the precursor are provided. The hafnium oxide precursor contains a nitrogen compound bound to HfCl 4 .
7399499 Methods of gas delivery for deposition processes and methods of depositing material on a substrate  
Methods for depositing material onto workpieces, methods of controlling the delivery of gases in deposition processes, and apparatus for depositing materials onto workpieces. One embodiment of a...
7396766 Low-temperature chemical vapor deposition of low-resistivity ruthenium layers  
A low-temperature chemical vapor deposition process for depositing of a low-resistivity ruthenium metal layers that can be used as barrier/seed layers in Cu metallization schemes. The method...
7396755 Process and integration scheme for a high sidewall coverage ultra-thin metal seed layer  
The present invention provides a method of forming a metal seed layer 100 . The method includes physical vapor deposition of seed metal 200 within an opening 140 located in a dielectric layer ...
7396570 Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers  
Chemical vapor deposition methods of forming titanium silicide including layers on substrates are disclosed. TiCl 4 and at least one silane are first fed to the chamber at or above a first...
7393784 Method of manufacturing suspension structure and chamber  
A method of manufacturing a suspension structure including providing a substrate, forming a hole and a sacrificial layer filling the hole on the substrate, forming a patterned photoresist layer on...
7393783 Methods of forming metal-containing structures  
The invention includes methods of forming metal-containing layers. The layers can, in particular aspects, consist essentially of metal, or consist of metal. The desired layers can be formed by...
7393778 Semiconductor device and method for fabricating the same  
A semiconductor device and a method for fabricating the same in which a protective oxide layer is formed on an insulating interlayer gap are disclosed. An example semiconductor device includes a...
7393765 Low temperature CVD process with selected stress of the CVD layer on CMOS devices  
Device-enhancing coatings are deposited on CMOS devices by successively masking with photoresist each one of the sets of N-channel and P-channel devices while unmasking or leaving unmasked the...
7393736 Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics  
The use of atomic layer deposition (ALD) to form a nanolaminate dielectric of zirconium oxide (ZrO 2 ), hafnium oxide (HfO 2 ) and tin oxide (SnO 2 ) acting as a single dielectric layer with a...
7390743 Methods for forming a structured tungsten layer and forming a semiconductor device using the same  
A method for forming a structured tungsten layer and a method for forming a semiconductor device using the same. A first tungsten layer is formed with an atomic layer deposition (ALD) method. A...
7384867 Formation of composite tungsten films  
Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and...
7384833 Stress liner for integrated circuits  
In one embodiment, a self-aligned contact (SAC) trench structure is formed through a dielectric layer to expose an active region of a MOS transistor. The SAC trench structure not only exposes the...
7378328 Method of fabricating memory device utilizing carbon nanotubes  
A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a...
7371683 Method for carrying object to be processed  
A method for carrying an object to be processed used for a processing apparatus which comprises a plurality of process chambers including a specific process chamber for a process in which the...
7371586 Superconductor and process for producing the same  
A superconductor and a method for producing the same are provided. The method for producing a superconductor includes the step of forming a superconducting layer on a base layer by performing a...
7368384 Film formation apparatus and method of using the same  
A method of using a film formation apparatus for a semiconductor process includes a step of removing a by-product film deposited on an inner surface of a reaction chamber of the film formation...
7368382 Atomic layer deposition methods  
The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic...
7368381 Methods of forming materials  
The invention includes methods of forming films over substrates. A substrate is provided within a reaction chamber, and a mixture is also provided within the chamber. The mixture includes a...
7368368 Multi-chamber MOCVD growth apparatus for high performance/high throughput  
In one embodiment the present invention is a method of conducting multiple step multiple chamber chemical vapor deposition while avoiding reactant memory in the relevant reaction chambers. The...
7368359 Method for manufacturing semiconductor substrate and semiconductor substrate  
A semiconductor substrate ( 100 ) is acquired by forming a mask with a target thickness on a major surface of a single-crystal silicon substrate, implanting oxygen ions to the major surface at a...
7365014 Reticle fabrication using a removable hard mask  
We have reduced the critical dimension bias for reticle fabrication. Pattern transfer to the radiation-blocking layer of the reticle substrate essentially depends upon use of a hard mask to which...
7361595 Transition metal thin film forming method  
A semiconductor substrate is placed in a predetermined processing vessel, and oxygen gas activated by, e.g. conversion into a plasma is supplied onto an insulating film. The surfaces of an...
7358197 Method for avoiding polysilicon film over etch abnormal  
The method for avoiding polysilicon film over etch abnormal includes cleaning a semiconductor substrate. A dielectric layer is formed on the substrate. Subsequently, a first silicon source gas at a...
7358191 Method for decreasing sheet resistivity variations of an interconnect metal layer  
According to one exemplary embodiment, a method includes a step of forming a number of trenches in a dielectric layer, where the dielectric layer is situated over a wafer. The method further...
7358187 Coating process for patterned substrate surfaces  
The present invention provides a coating process for patterned substrate surfaces, in which a substrate ( 101 ) is provided, the substrate having a surface ( 105 ) which is patterned in a substrate...
7354873 Method for forming insulation film  
A method for forming an insulation film having filling property on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound...
7351668 Film formation method and apparatus for semiconductor process  
An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a...
7344983 Clustered surface preparation for silicide and metal contacts  
A cluster tool is provided for the implementing of a clustered and integrated surface pre-cleaning of the surface of semiconductor devices. More particularly, there is provided a cluster tool and a...
7344982 System and method of selectively depositing Ruthenium films by digital chemical vapor deposition  
A chemical vapor deposition reaction system converts a reactant precursor, which includes the metal Ruthenium, to a vapor during a chemical reaction in order to deposit the metal on a semiconductor...
7344974 Metallization method of semiconductor device  
A method for forming a metallization contact in a semiconductor device includes the steps of: (a) forming an insulating layer on a semiconductor substrate including an active device region; (b)...
7338901 Method of preparing a film layer-by-layer using plasma enhanced atomic layer deposition  
A method for forming a thin film on a substrate layer by layer using plasma enhanced atomic layer deposition is described. The method comprises using a low power reduction step for at least one...
7338900 Method for forming tungsten nitride film  
A method for forming a tungsten nitride film including a first material gas supply step of supplying a first material gas composed of a tungsten compound gas, a reduction step of supplying a...
7338887 Plasma control method and plasma control apparatus  
A method that controls the distribution of plasma generated in a vacuum chamber, for example, as part of a plasma thin film deposition or plasma etching process. For thin film deposition, the...
7332425 Simultaneous deposition and etch process for barrier layer formation in microelectronic device interconnects  
The present invention provides a method of forming a interconnect barrier layer 100 . In the method, physical vapor deposition of barrier material 200 is performed within an opening 140 ...
7329947 Heat treatment jig for semiconductor substrate  
When a two-division structure heat treatment jig for semiconductor substrate that includes a silicon first jig that comes into direct contact with a semiconductor substrate that is heat treated and...
7326656 Method of forming a metal oxide dielectric  
A semiconductor device comprising a semiconductor body having a top surface and a first and second laterally opposite sidewalls as formed on an insulating substrate is claimed. A gate dielectric is...
7323412 Atomic layer deposition methods, and methods of forming materials over semiconductor substrates  
The invention includes methods in which at least two different precursors are flowed into a reaction chamber at different and substantially non-overlapping times relative to one another to form a...
7323411 Method of selective tungsten deposition on a silicon surface  
In one embodiment, a selective tungsten deposition process includes the steps of pre-flowing silane into a deposition chamber, pumping down the chamber, and then selectively depositing tungsten on...
7314790 Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strain  
The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a Si-containing layer having a <110> crystal orientation and a biaxial...
7312163 Atomic layer deposition methods, and methods of forming materials over semiconductor substrates  
The invention includes methods in which at least two different precursors are flowed into a reaction chamber at different and substantially non-overlapping times relative to one another to form a...
7311942 Method for binding halide-based contaminants during formation of a titanium-based film  
A method and apparatus are presented for reducing halide-based contamination within deposited titanium-based thin films. Halide adsorbing materials are utilized within the deposition chamber to...
7306956 Variable temperature and dose atomic layer deposition  
A variable temperature and/or reactant dose atomic layer deposition (VTD-ALD) process modulates ALD reactor conditions (e.g., temperature, flow rates, etc.) during growth of a film (e.g., metallic)...
7303991 Atomic layer deposition methods  
The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic...
7300873 Systems and methods for forming metal-containing layers using vapor deposition processes  
A method of forming (and an apparatus for forming) a metal containing layer on a substrate, particularly a semiconductor substrate or substrate assembly for use in manufacturing a semiconductor or...
7300859 Atmospheric glow discharge with concurrent coating deposition  
A plasma is produced in a treatment space ( 58 ) by diffusing a plasma gas at atmospheric pressure and subjecting it to an electric field created by two metallic electrodes ( 54,56 ) separated by a...
7299104 Substrate processing apparatus and substrate transferring method  
Shock waves occurring when opening a gate valve between two vacuum chambers and peeling of particles by a viscous force taking place when a gas is supplied into a vacuum chamber are necessary to be...
7297634 Method and apparatus for semiconductor device and semiconductor memory device  
Method and apparatus on charges injection using piezo-ballistic-charges injection mechanism are provided for semiconductor device and nonvolatile memory device. The device comprises a strain...
7297558 Method of manufacturing semiconductor device  
A W plug ( 24 ) is formed and a W oxidation preventing barrier metal film ( 25 ) is formed thereon. After that, an SiON film ( 27 ) thinner than the W oxidation preventing barrier metal film ( 25 )...
7285494 Multiple stage electroless deposition of a metal layer  
A multiple stage method of electrolessly depositing a metal layer is presented. This method may have the two main stages of first forming a thin metal layer on a metal surface using an electroless...
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