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7615501 |
Method for making a thin film layer
A method of making a patterned layer comprises directing a beam of vaporized material toward a reflector such that the beam of vaporized material impinges an impingement surface of the reflector...
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7615500 |
Method for depositing film and method for manufacturing semiconductor device
A method for depositing a film includes: (a) processing a wafer, including forming a high dielectric constant film on a first wafer; and achieving nitridation of the high dielectric constant film...
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7615492 |
Preparing method of CNT-based semiconductor sensitized solar cell
A solar cell is prepared. The solar cell is photo-sensitized. The solar cell has a semiconductor layer. And carbon nanotubes are deposited on the semiconductor layer with an arrangement. The solar...
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7611990 |
Deposition methods for barrier and tungsten materials
Embodiments as described herein provide a method for depositing barrier layers and tungsten materials on substrates. In one embodiment, a method for depositing materials is provided which includes...
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7611989 |
Polysilicon dummy wafers and process used therewith
Non-production wafers of polycrystalline silicon are placed in non-production slots of a support tower for thermal processing monocrystalline silicon wafers. They may have thicknesses of 0.725 to 2...
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7608542 |
Large-size glass substrate for photomask and making method, computer-readable recording medium, and mother glass exposure method
A large-size glass substrate, from which a photomask substrate is formed, is prepared by processing a large-size glass substrate stock by (1) a flattening removal quantity based on height data of...
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7605083 |
Formation of composite tungsten films
Embodiments of the invention provide methods for depositing tungsten materials. In one embodiment, a method for forming a composite tungsten film is provided which includes positioning a substrate...
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7601601 |
Method for manufacturing semiconductor device
An object is to provide a method for manufacturing, with high yield, a semiconductor device having a crystalline semiconductor layer even if a substrate with low upper temperature limit. A groove...
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7592256 |
Method of forming tungsten film
A method of forming a tungsten film on a surface of an object to be processed in a vessel capable of being vacuumized, includes the steps of forming a tungsten film by alternately repeating a...
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7589017 |
Methods for growing low-resistivity tungsten film
Improved methods for depositing low resistivity tungsten films are provided. The methods involve depositing a tungsten nucleation layer on a substrate and then depositing a tungsten bulk layer over...
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7585769 |
Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE
A method of suppressing parasitic particle formation in a metal organic chemical vapor deposition process is described. The method may include providing a substrate to a reaction chamber, and...
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7582562 |
Atomic layer deposition methods
An atomic layer deposition method includes providing a semiconductor substrate within a deposition chamber. A first metal halide-comprising precursor gas is flowed to the substrate within the...
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7576016 |
Process for manufacturing semiconductor device
An objective of this invention is to solve the problem that in ALD film deposition using a vertical batch processing machine advantageous for improving a throughput, reliability in a dielectric...
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7576012 |
Atomic layer deposition methods
A first precursor gas is flowed to the substrate within the chamber effective to form a first monolayer on the substrate. A second precursor gas different in composition from the first precursor...
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7576006 |
Protective self-aligned buffer layers for damascene interconnects
Capping protective self aligned buffer (PSAB) layers are layers of material that are selectively formed at the surface of metal layers in a partially fabricated semiconductor device. Encapsulating...
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7576005 |
Dense seed layer and method of formation
Methods of forming dense seed layers and structures thereof are provided. Seed layers including a monolayer of molecules having a density of about 0.5 or greater may be manufactured over a metal...
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7569487 |
Method for atomic layer deposition of materials using a pre-treatment for semiconductor devices
A method for forming atomic layer deposition. The method includes placing a semiconductor substrate (e.g., wafer, LCD panel) including an upper surface in a chamber. The upper surface includes one...
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7563718 |
Method for forming tungsten layer of semiconductor device and method for forming tungsten wiring layer using the same
A semiconductor substrate is loaded into a reaction chamber to form a tungsten layer. A source gas including tungsten (W) is introduced into the reaction chamber to grow a crystal nucleus of the...
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7563715 |
Method of producing thin films
A process for producing metal nitride thin films comprising doping the metal nitride thin films by atomic layer deposition (ALD) with silicon or boron or a combination thereof. The work function of...
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7560386 |
Method of manufacturing nonvolatile semiconductor memory device
A method of manufacturing a nonvolatile semiconductor memory device may include forming a pad oxide layer pattern and a mask pattern on a semiconductor substrate, forming a trench within the...
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7560383 |
Method of forming a thin layer and method of manufacturing a non-volatile semiconductor device using the same
In a method of forming a thin layer having a desired composition, a source gas is provided onto a substrate loaded in a chamber for a first time, and the source gas is chemisorbed onto the...
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7553677 |
Method for manufacturing ferroelectric memory
A method for manufacturing a ferroelectric memory includes the steps of: (a) forming a ferroelectric capacitor by sequentially laminating, on a substrate, a lower electrode, a ferroelectric layer...
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7547631 |
Organometallic compounds
Organometallic compounds containing a phosphoamidinate ligand are provided. Such compounds are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing...
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7544615 |
Systems and methods of forming refractory metal nitride layers using organic amines
A method of forming (and apparatus for forming) refractory metal nitride layers (including silicon nitride layers), such as a tantalum nitride barrier layer, on a substrate by using an atomic layer...
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7541283 |
Plasma processing method and plasma processing apparatus
A plasma processing method for performing a plasma process on a substrate to be processed by making a plasma act thereon includes the following sequential steps of making a plasma weaker than one...
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7531457 |
Method of fabricating suspended structure
A method of fabricating a suspended structure. First, a substrate including a photoresist layer hardened by heat is provided. Subsequently, the hardened photoresist layer is etched so as to turn...
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7531452 |
Strained metal silicon nitride films and method of forming
A method for forming a strained metal nitride film and a semiconductor device containing the strained metal nitride film. The method includes exposing a substrate to a gas containing a metal...
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7531398 |
Methods and devices employing metal layers in gates to introduce channel strain
A semiconductor device is fabricated having a metal stress inducing layer that facilitates channel mobility. A gate dielectric layer is formed over a semiconductor substrate. The metal stress...
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7524761 |
Method for manufacturing semiconductor device capable of reducing parasitic bit line capacitance
A semiconductor memory device is manufactured by: forming a hole by etching an interlayer insulation film formed over a semiconductor substrate; forming a barrier film over the interlayer...
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7514366 |
Methods for forming shallow trench isolation
A method of depositing dielectric material into sub-micron spaces and resultant structures is provided. After a trench is etched in the surface of a wafer, a silicon nitride barrier is deposited...
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7504332 |
Water-barrier performance of an encapsulating film
A method and apparatus for depositing a material layer onto a substrate is described. The method includes delivering a mixture of precursors for the material layer into a process chamber and...
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7501344 |
Formation of boride barrier layers using chemisorption techniques
In one embodiment, a method for depositing a boride-containing barrier layer on a substrate is provided which includes exposing the substrate sequentially to a boron-containing compound and a...
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7494943 |
Method for using film formation apparatus
In a method for using a film formation apparatus for a semiconductor process, process conditions of a film formation process are determined. The process conditions include a preset film thickness...
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7488683 |
Chemical vapor deposited film based on a plasma CVD method and method of forming the film
A method of forming a vapor deposited film of a silicon oxide on the surface of a substrate by holding the substrate to be treated in a plasma-treating chamber, and effecting the treatment with a...
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7488677 |
Interconnect structures with encasing cap and methods of making thereof
A method of making an interconnect that includes providing an interconnect structure in a dielectric material, recessing the dielectric material such that a portion of the interconnect structure...
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7485340 |
Production of elemental films using a boron-containing reducing agent
The present invention relates generally to depositing elemental thin films. In particular, the invention concerns a method of growing elemental metal thin films by Atomic Layer Deposition (ALD)...
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7476605 |
Method of manufacturing semiconductor device
A method for manufacturing a semiconductor device is provided, which comprises forming a first metal wiring layer above a semiconductor substrate, forming an inorganic insulating film above the...
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7476602 |
N2 based plasma treatment for enhanced sidewall smoothing and pore sealing porous low-k dielectric films
A method of forming a semiconductor device including forming a low-k dielectric material over a substrate, depositing a liner on a portion of the low-k dielectric material, and exposing the liner...
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7473649 |
Methods for controlling feature dimensions in crystalline substrates
A method of forming a slot in a substrate comprises growing an oxide layer on a first side of a substrate, patterning and etching the oxide layer to form an opening, forming a material overlying...
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7473638 |
Plasma-enhanced cyclic layer deposition process for barrier layers
In one embodiment, a method for forming a metal-containing material on a substrate is provided which includes forming a metal containing barrier layer on a substrate by a plasma-enhanced cyclical...
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7468321 |
Application of impressed-current cathodic protection to prevent metal corrosion and oxidation
A new method is provided for the processing of metals, most notably copper, such that damage to exposed surfaces of these metals is prevented. During a step of semiconductor processing, which...
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7465669 |
Method of fabricating a silicon nitride stack
Embodiments of methods for fabricating a silicon nitride stack on a semiconductor substrate are provided herein. In one embodiment, a method for fabricating a silicon nitride stack on a...
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7465663 |
Semiconductor device fabrication method
In fabrication of a semiconductor device which is provided with resistances and MOS transistors on the same substrate, conduction failures of contacts and leaching of wiring metal into a silicon...
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7462565 |
Method of manufacturing semiconductor device
A substrate having a copper wiring is prepared. An insulating film is formed on the copper wiring. The insulating film is etched with a gas containing fluorine to form an opening reaching the...
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7462525 |
Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strain
The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a Si-containing layer having a <110> crystal orientation and a biaxial...
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7456102 |
Electroless copper fill process
Disclosed is a procedure for bottom-up fill of electroless copper film in sub-micron integrated circuit features. By repeatedly placing an integrated circuit wafer in an electroless bath, a...
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7452818 |
Method for selectively etching portions of a layer of material based upon a density or size of semiconductor features located thereunder
The disclosure provides a method for manufacturing a semiconductor device. The method, in one embodiment, includes forming semiconductor features ( 405, 410, 415, 420, 425, 430, 435, 440, 445 )...
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7452811 |
Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same
In a method for forming a wiring of a semiconductor device using an atomic layer deposition, an insulating interlayer is formed on a substrate. Tantalum amine derivatives represented by a chemical...
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7452801 |
Metal interconnection structure of a semiconductor device having low resistance and method of fabricating the same
Provided is a metal interconnection structure of a semiconductor device, including a first metal film pattern disposed on an upper part of an insulation film of a semiconductor substrate; an...
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7439178 |
Technique for stable processing of thin/fragile substrates
A semiconductor on insulator (SOI) wafer includes a semiconductor substrate having first and second main surfaces opposite to each other. A dielectric layer is disposed on at least a portion of the...
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