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7615501 Method for making a thin film layer  
A method of making a patterned layer comprises directing a beam of vaporized material toward a reflector such that the beam of vaporized material impinges an impingement surface of the reflector...
7615500 Method for depositing film and method for manufacturing semiconductor device  
A method for depositing a film includes: (a) processing a wafer, including forming a high dielectric constant film on a first wafer; and achieving nitridation of the high dielectric constant film...
7615492 Preparing method of CNT-based semiconductor sensitized solar cell  
A solar cell is prepared. The solar cell is photo-sensitized. The solar cell has a semiconductor layer. And carbon nanotubes are deposited on the semiconductor layer with an arrangement. The solar...
7611990 Deposition methods for barrier and tungsten materials  
Embodiments as described herein provide a method for depositing barrier layers and tungsten materials on substrates. In one embodiment, a method for depositing materials is provided which includes...
7611989 Polysilicon dummy wafers and process used therewith  
Non-production wafers of polycrystalline silicon are placed in non-production slots of a support tower for thermal processing monocrystalline silicon wafers. They may have thicknesses of 0.725 to 2...
7608542 Large-size glass substrate for photomask and making method, computer-readable recording medium, and mother glass exposure method  
A large-size glass substrate, from which a photomask substrate is formed, is prepared by processing a large-size glass substrate stock by (1) a flattening removal quantity based on height data of...
7605083 Formation of composite tungsten films  
Embodiments of the invention provide methods for depositing tungsten materials. In one embodiment, a method for forming a composite tungsten film is provided which includes positioning a substrate...
7601601 Method for manufacturing semiconductor device  
An object is to provide a method for manufacturing, with high yield, a semiconductor device having a crystalline semiconductor layer even if a substrate with low upper temperature limit. A groove...
7592256 Method of forming tungsten film  
A method of forming a tungsten film on a surface of an object to be processed in a vessel capable of being vacuumized, includes the steps of forming a tungsten film by alternately repeating a...
7589017 Methods for growing low-resistivity tungsten film  
Improved methods for depositing low resistivity tungsten films are provided. The methods involve depositing a tungsten nucleation layer on a substrate and then depositing a tungsten bulk layer over...
7585769 Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE  
A method of suppressing parasitic particle formation in a metal organic chemical vapor deposition process is described. The method may include providing a substrate to a reaction chamber, and...
7582562 Atomic layer deposition methods  
An atomic layer deposition method includes providing a semiconductor substrate within a deposition chamber. A first metal halide-comprising precursor gas is flowed to the substrate within the...
7576016 Process for manufacturing semiconductor device  
An objective of this invention is to solve the problem that in ALD film deposition using a vertical batch processing machine advantageous for improving a throughput, reliability in a dielectric...
7576012 Atomic layer deposition methods  
A first precursor gas is flowed to the substrate within the chamber effective to form a first monolayer on the substrate. A second precursor gas different in composition from the first precursor...
7576006 Protective self-aligned buffer layers for damascene interconnects  
Capping protective self aligned buffer (PSAB) layers are layers of material that are selectively formed at the surface of metal layers in a partially fabricated semiconductor device. Encapsulating...
7576005 Dense seed layer and method of formation  
Methods of forming dense seed layers and structures thereof are provided. Seed layers including a monolayer of molecules having a density of about 0.5 or greater may be manufactured over a metal...
7569487 Method for atomic layer deposition of materials using a pre-treatment for semiconductor devices  
A method for forming atomic layer deposition. The method includes placing a semiconductor substrate (e.g., wafer, LCD panel) including an upper surface in a chamber. The upper surface includes one...
7563718 Method for forming tungsten layer of semiconductor device and method for forming tungsten wiring layer using the same  
A semiconductor substrate is loaded into a reaction chamber to form a tungsten layer. A source gas including tungsten (W) is introduced into the reaction chamber to grow a crystal nucleus of the...
7563715 Method of producing thin films  
A process for producing metal nitride thin films comprising doping the metal nitride thin films by atomic layer deposition (ALD) with silicon or boron or a combination thereof. The work function of...
7560386 Method of manufacturing nonvolatile semiconductor memory device  
A method of manufacturing a nonvolatile semiconductor memory device may include forming a pad oxide layer pattern and a mask pattern on a semiconductor substrate, forming a trench within the...
7560383 Method of forming a thin layer and method of manufacturing a non-volatile semiconductor device using the same  
In a method of forming a thin layer having a desired composition, a source gas is provided onto a substrate loaded in a chamber for a first time, and the source gas is chemisorbed onto the...
7553677 Method for manufacturing ferroelectric memory  
A method for manufacturing a ferroelectric memory includes the steps of: (a) forming a ferroelectric capacitor by sequentially laminating, on a substrate, a lower electrode, a ferroelectric layer...
7547631 Organometallic compounds  
Organometallic compounds containing a phosphoamidinate ligand are provided. Such compounds are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing...
7544615 Systems and methods of forming refractory metal nitride layers using organic amines  
A method of forming (and apparatus for forming) refractory metal nitride layers (including silicon nitride layers), such as a tantalum nitride barrier layer, on a substrate by using an atomic layer...
7541283 Plasma processing method and plasma processing apparatus  
A plasma processing method for performing a plasma process on a substrate to be processed by making a plasma act thereon includes the following sequential steps of making a plasma weaker than one...
7531457 Method of fabricating suspended structure  
A method of fabricating a suspended structure. First, a substrate including a photoresist layer hardened by heat is provided. Subsequently, the hardened photoresist layer is etched so as to turn...
7531452 Strained metal silicon nitride films and method of forming  
A method for forming a strained metal nitride film and a semiconductor device containing the strained metal nitride film. The method includes exposing a substrate to a gas containing a metal...
7531398 Methods and devices employing metal layers in gates to introduce channel strain  
A semiconductor device is fabricated having a metal stress inducing layer that facilitates channel mobility. A gate dielectric layer is formed over a semiconductor substrate. The metal stress...
7524761 Method for manufacturing semiconductor device capable of reducing parasitic bit line capacitance  
A semiconductor memory device is manufactured by: forming a hole by etching an interlayer insulation film formed over a semiconductor substrate; forming a barrier film over the interlayer...
7514366 Methods for forming shallow trench isolation  
A method of depositing dielectric material into sub-micron spaces and resultant structures is provided. After a trench is etched in the surface of a wafer, a silicon nitride barrier is deposited...
7504332 Water-barrier performance of an encapsulating film  
A method and apparatus for depositing a material layer onto a substrate is described. The method includes delivering a mixture of precursors for the material layer into a process chamber and...
7501344 Formation of boride barrier layers using chemisorption techniques  
In one embodiment, a method for depositing a boride-containing barrier layer on a substrate is provided which includes exposing the substrate sequentially to a boron-containing compound and a...
7494943 Method for using film formation apparatus  
In a method for using a film formation apparatus for a semiconductor process, process conditions of a film formation process are determined. The process conditions include a preset film thickness...
7488683 Chemical vapor deposited film based on a plasma CVD method and method of forming the film  
A method of forming a vapor deposited film of a silicon oxide on the surface of a substrate by holding the substrate to be treated in a plasma-treating chamber, and effecting the treatment with a...
7488677 Interconnect structures with encasing cap and methods of making thereof  
A method of making an interconnect that includes providing an interconnect structure in a dielectric material, recessing the dielectric material such that a portion of the interconnect structure...
7485340 Production of elemental films using a boron-containing reducing agent  
The present invention relates generally to depositing elemental thin films. In particular, the invention concerns a method of growing elemental metal thin films by Atomic Layer Deposition (ALD)...
7476605 Method of manufacturing semiconductor device  
A method for manufacturing a semiconductor device is provided, which comprises forming a first metal wiring layer above a semiconductor substrate, forming an inorganic insulating film above the...
7476602 N2 based plasma treatment for enhanced sidewall smoothing and pore sealing porous low-k dielectric films  
A method of forming a semiconductor device including forming a low-k dielectric material over a substrate, depositing a liner on a portion of the low-k dielectric material, and exposing the liner...
7473649 Methods for controlling feature dimensions in crystalline substrates  
A method of forming a slot in a substrate comprises growing an oxide layer on a first side of a substrate, patterning and etching the oxide layer to form an opening, forming a material overlying...
7473638 Plasma-enhanced cyclic layer deposition process for barrier layers  
In one embodiment, a method for forming a metal-containing material on a substrate is provided which includes forming a metal containing barrier layer on a substrate by a plasma-enhanced cyclical...
7468321 Application of impressed-current cathodic protection to prevent metal corrosion and oxidation  
A new method is provided for the processing of metals, most notably copper, such that damage to exposed surfaces of these metals is prevented. During a step of semiconductor processing, which...
7465669 Method of fabricating a silicon nitride stack  
Embodiments of methods for fabricating a silicon nitride stack on a semiconductor substrate are provided herein. In one embodiment, a method for fabricating a silicon nitride stack on a...
7465663 Semiconductor device fabrication method  
In fabrication of a semiconductor device which is provided with resistances and MOS transistors on the same substrate, conduction failures of contacts and leaching of wiring metal into a silicon...
7462565 Method of manufacturing semiconductor device  
A substrate having a copper wiring is prepared. An insulating film is formed on the copper wiring. The insulating film is etched with a gas containing fluorine to form an opening reaching the...
7462525 Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strain  
The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a Si-containing layer having a <110> crystal orientation and a biaxial...
7456102 Electroless copper fill process  
Disclosed is a procedure for bottom-up fill of electroless copper film in sub-micron integrated circuit features. By repeatedly placing an integrated circuit wafer in an electroless bath, a...
7452818 Method for selectively etching portions of a layer of material based upon a density or size of semiconductor features located thereunder  
The disclosure provides a method for manufacturing a semiconductor device. The method, in one embodiment, includes forming semiconductor features ( 405, 410, 415, 420, 425, 430, 435, 440, 445 )...
7452811 Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same  
In a method for forming a wiring of a semiconductor device using an atomic layer deposition, an insulating interlayer is formed on a substrate. Tantalum amine derivatives represented by a chemical...
7452801 Metal interconnection structure of a semiconductor device having low resistance and method of fabricating the same  
Provided is a metal interconnection structure of a semiconductor device, including a first metal film pattern disposed on an upper part of an insulation film of a semiconductor substrate; an...
7439178 Technique for stable processing of thin/fragile substrates  
A semiconductor on insulator (SOI) wafer includes a semiconductor substrate having first and second main surfaces opposite to each other. A dielectric layer is disposed on at least a portion of the...