Matches 351 - 400 out of 868 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >
Match Document Document Title
6638859 Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition  
A method and apparatus for performing atomic layer deposition in which a surface of a substrate is pretreated to make the surface of the substrate reactive for performing atomic layer deposition.
6638774 Method of making resistive memory elements with reduced roughness  
A resistive memory element ( 144 ), magnetic random access memory (MRAM) device, and methods of manufacturing thereof, wherein a thin oxide layer ( 132 ) is disposed within the first metal layer (...
6635571 Process for forming aluminum or aluminum oxide thin film on substrates  
Disclosed is a process for depositing an aluminum oxide thin film necessary for semiconductor devices. The process includes the steps of: subjecting a gaseous organoaluminum compound as an aluminum...
6635569 Method of passivating and stabilizing a Ti-PECVD process chamber and combined Ti-PECVD/TiN-CVD processing method and apparatus  
A methodology is described by which a processing chamber used to deposit plasma-enhanced Ti-CVD films may be conditioned and passivated efficiently after either a wet cleaning or in-situ chemical...
6632739 Method for fabricating a semiconductor device  
A low temperature film deposition process fills fine gaps while avoiding removal of the deposited film in post-processes, and is applicable to formation of semiconductor devices having both sparse...
6630401 Radical-assisted sequential CVD  
A new method for CVD deposition on a substrate is taught wherein radical species are used in alternate steps to depositions from a molecular precursor to treat the material deposited from the...
6627547 Hot metallization process  
The invention enables a layer of metal to be formed on a substrate with few or no voids formed in the layer, with increased throughput and without raising the temperature of the substrate to a...
6627545 Method of forming silicon oxide layer and method of manufacturing thin film transistor thereby  
The present method of forming a silicon oxide layer comprises providing two frequency excitation plasma CVD device which comprises a high frequency electrode, a susceptor electrode, and two...
6626185 Method of depositing a silicon containing layer on a semiconductor substrate  
A plasma cleaning method for removing deposits in a CVD chamber. The method includes introducing a cleaning gas comprising a fluorine-based gas into the chamber. A plasma is formed by exposing the...
6624072 Organometallic compound mixtures in chemical vapor deposition  
Multi-metallic films are prepared from multi-metallic mixtures of metalloamide compounds. The mixtures are subjected to vaporization to form a multi-metallic vapor having defined and controllable...
6624071 Systems and method for fabrication of a thin film pattern  
The present invention provides a method for fabricating a thin film pattern including forming a pattern made of an organic molecule film on a substrate. The method further includes supplying a...
6623798 Chemical vapor deposition method for depositing silicide and apparatus for performing the same  
A chemical vapor deposition (CVD) method for depositing a suicide and a CVD system for performing the same are disclosed. A silicide is deposited on a substrate. Residual gases remaining from the...
6617247 Method of processing a semiconductor wafer in a reaction chamber with a rotating component  
A reactor for processing semiconductor wafers and the like is provided. The reactor employs one or more rotating components to more evenly distribute temperature or gases within the chamber. In one...
6613660 Metallization process sequence for a barrier metal layer  
In an in situ damascene metallization process employing a barrier layer between the metal and the dielectric, the generation of voids, especially at the bottom of vias, can be significantly reduced...
6613587 Method of replacing at least a portion of a semiconductor substrate deposition chamber liner  
A method includes removing at least a piece of a deposition chamber liner from a deposition chamber by passing it through a passageway to the deposition chamber through which semiconductor...
6610596 Method of forming metal interconnection using plating and semiconductor device manufactured by the method  
A method is provided for forming a metal interconnection using a plating process, which can improve the throughput and reliability of semiconductor devices by decreasing the required polishing in a...
6607976 Copper interconnect barrier layer structure and formation method  
A method for forming a tungsten-containing copper interconnect barrier layer (e.g., a tungsten [W] or tungsten-nitride [W X N] copper interconnect barrier layer) on a substrate with a high (e.g.,...
6602784 Radical-assisted sequential CVD  
A new method for CVD deposition on a substrate is taught wherein radical species are used in alternate steps to depositions from a molecular precursor to treat the material deposited from the...
6602783 Deposition of titanium amides  
The present invention is a process for enhancing the chemical vapor deposition of titanium nitride from a titanium containing precursor selected from the group consisting of...
6602770 Silicon layer to improve plug filling by CVD  
A method of forming an electrically conductive plug in an opening in a dielectric layer of a substrate. Silane is thermally decomposed so as to deposit a layer of material on the walls of an...
6602344 Ceramic film and method of manufacturing the same, semiconductor device, and piezoelectric device  
A method of manufacturing a ceramic film includes a step of forming a ceramic film 30 by crystallizing a raw material body 20. The raw material body 20 contains different types of raw...
6599572 Process for growing metalloid thin films utilizing boron-containing reducing agents  
A process for growing an electrically conductive metalloid thin film on a substrate with a chemical vapor deposition process. A metal source material and a reducing agent capable of reducing the...
6596649 Method and apparatus for supplying gas used in semiconductor processing  
A method and apparatus for uniformly supplying a gas into a chamber through a dispersion head. The gas is introduced through an inlet of the dispersion head, and flows in a flow direction toward a...
6589887 Forming metal-derived layers by simultaneous deposition and evaporation of metal  
The present invention pertains to methods for forming metal-derived layers on substrates. Preferred methods apply to integrated circuit fabrication. In particular, selective methods may be used to...
6589868 Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput  
Embodiments of the present invention include a method of depositing an improved seasoning film. In one embodiment the method includes, prior to performing a substrate processing operation, forming...
6589865 Low pressure, low temperature, semiconductor gap filling process  
A structure and process is provided for filling integrated circuit cavities such as contacts and vias. These structures are filled at relatively low temperatures of no more than about 300° C., and...
6586330 Method for depositing conformal nitrified tantalum silicide films by thermal CVD  
Method for depositing a nitrified tantalum silicide barrier film on a semiconductor device including a silicon-based substrate with recessed features by low temperature thermal CVD of tantalum...
6582569 Process for sputtering copper in a self ionized plasma  
A DC magnetron sputter reactor for sputtering copper, its method of use, and shields and other parts promoting self-ionized plasma (SIP) sputtering, preferably at pressures below 5 milliTorr,...
6579794 Tungsten layer formation method for semiconductor device and semiconductor device using the same  
A tungsten layer formation method for a semiconductor device reduces resistivity of the tungsten layer without requiring modification of the conventional manufacturing system. The method includes...
6576571 Process of vapor phase growth of nitride semiconductor  
Disclosed herein is a process for vapor phase growth of gallium nitride compound semiconductor which yields uniform crystal layers with good reproducibility. The process comprises forming a first...
6576538 Technique for high efficiency metalorganic chemical vapor deposition  
A technique for more efficiently forming conductive elements, such as conductive layers and electrodes, using chemical vapor deposition. A conductive precursor gas, such as a platinum precursor...
6576293 Method to improve copper thin film adhesion to metal nitride substrates by the addition of water  
A method of forming a copper thin film by chemical vapor deposition, includes introducing a wafer into a chemical vapor deposition chamber; humidifying helium gas with water to form a wet helium...
6573185 Manufacture of a semiconductor device  
The present method of manufacturing a semiconductor device has a step of forming a metal film on the surface of a group of semiconductor wafers by bringing the internal temperature of a chamber of...
6573184 Apparatus and method for depositing thin film on wafer using atomic layer deposition  
An atomic layer deposition (ALD) thin film deposition apparatus including a reactor in which a wafer is mounted and a thin film is deposited on the wafer, a first reaction gas supply portion for...
6573182 Chemical vapor deposition using organometallic precursors  
A multi-component layer is deposited on a semiconductor substrate in a semiconductor process. The multi-component layer may be a dielectric layer formed from a gaseous titanium organometallic...
6573181 Method of forming contact structures using nitrogen trifluoride preclean etch process and a titanium chemical vapor deposition step  
A method of forming a contact in an integrated circuit including forming a dielectric layer over a silicon substrate, etching a contact hole through the dielectric layer, exposing the etched...
6573180 PECVD method of forming a tungsten silicide layer on a polysilicon layer  
A semiconductor substrate having a polysilicon layer is loaded into a process chamber of a plasma enhanced chemical vapor deposition device. A silicon source gas, a tungsten source gas, and a...
6573178 Manufacturing method for semiconductor device and semiconductor manufacturing apparatus  
A method for manufacturing a semiconductor device, includes forming a film on a substrate to be processed in a reaction furnace at a first temperature, unloading the substrate from the reaction...
6569765 Hybrid deposition system and methods  
A hybrid deposition system includes a reactor chamber, at least one heating unit, a first reagent gas source, a metallo-organic source, a second reagent gas source, and a valve unit for stopping...
6566259 Integrated deposition process for copper metallization  
Metallization process sequences are provided for forming reliable interconnects including lines, vias and contacts. An initial barrier layer, such as Ta or TaN, is first formed on a patterned...
6566256 Dual process semiconductor heterostructures and methods  
A method for forming an epitaxial layer involves depositing a buffer layer on a substrate by a first deposition process, followed by deposition of an epitaxial layer by a second deposition process....
6566220 Method for fabricating a semiconductor memory component  
The invention relates to a method for fabricating a semiconductor memory component, in particular a DRAM or FeRAM having a silicon substrate. The lower electrode of a storage capacitor is insulated...
6562731 Method for forming dielectric layers  
A method for forming dielectric layers is described. Wiring lines are formed on a provided semiconductor substrate. Spacers are formed on the sidewalls of the wiring lines. A liner layer is formed...
6562715 Barrier layer structure for copper metallization and method of forming the structure  
A barrier layer structure and a method of forming the structure. The barrier layer structure comprises a bilayer, with a first layer formed by chemical vapor deposition and a second layer formed by...
6562708 Method for incorporating silicon into CVD metal films  
A semiconductor device including a silicon-based substrate with recessed features and a tantalum barrier film having at least about 5% silicon incorporated substantially uniformly throughout the...
6559052 Deposition of amorphous silicon films by high density plasma HDP-CVD at low temperatures  
Method and apparatus for depositing an amorphous silicon film on a substrate using a high density plasma chemical vapor deposition (HDP-CVD) technique is provided. The method generally comprises...
6558963 Method and system for controlling the plasma treatment of a titanium nitride layer formed by a chemical vapor deposition process  
In general, the present invention is directed to a method of forming titanium nitride layers. In one illustrative embodiment, the method comprises forming a layer of titanium nitride by a chemical...
6555421 Method and apparatus for manufacturing semiconductor device  
A method and apparatus for manufacturing a semiconductor device can achieve the formation of thin films in a uniform thickness on a substrate. The method and apparatus includes a film-forming...
6555204 Method of preventing bridging between polycrystalline micro-scale features  
A method of preventing or at least reducing the likelihood of bridging between adjacent micro-scale polycrystalline structures, and particularly to reducing electrical shorting between adjacent...
6551929 Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques  
A method and system to form a refractory metal layer on a substrate features a bifurcated deposition process that includes nucleating a substrate using ALD techniques to serially expose the...
Matches 351 - 400 out of 868 < 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 >