Match Document Document Title
9040417 Semiconductor devices and methods of manufacture thereof  
Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes forming an insulating material layer over a...
9034664 Method to resolve hollow metal defects in interconnects  
A method of repairing hollow metal void defects in interconnects and resulting structures. After polishing interconnects, hollow metal void defects become visible. The locations of the defects are...
9029257 Semiconductor constructions and methods of planarizing across a plurality of electrically conductive posts  
Some embodiments include a planarization method. A liner is formed across a semiconductor substrate and along posts that extending upwardly from the substrate. Organic fill material is formed over...
RE45507 ***WITHDRAWN PATENT AS PER THE LATEST USPTO WITHDRAWN LIST***
Integrated circuit having oversized components and method of manufacture thereof
 
An integrated circuit includes electrical components that include one or more electrical elements on one or more dielectric layers. The electrical element has a geometric shape that exceeds...
8999844 Apparatuses including stair-step structures and methods of forming the same  
Methods for forming semiconductor structures are disclosed, including a method that involves forming sets of conductive material and insulating material, forming a first mask over the sets,...
8999843 Semiconductor device and fabricating method thereof  
A semiconductor device and method of fabricating the device are provided, the method including providing an insulating layer, wherein the insulating layer covers an active region and a gate of at...
8993442 Interconnect structure and method for forming the same  
Embodiments of an interconnect structure and methods for forming an interconnect structure are provided. The method includes forming a low-k dielectric layer over a substrate, forming an opening...
8993438 Semiconductor device manufacturing method  
According to one embodiment, a semiconductor device manufacturing method comprises defining a region in which absorptance of light illuminated for annealing to a substrate on which a pattern of a...
8993439 Method of manufacturing a semiconductor device  
A method of manufacturing a semiconductor device, including forming a molding layer; forming a damascene mask layer and mask layer on the molding layer; forming a mask layer pattern by etching the...
8994175 Method of manufacturing semiconductor device and semiconductor device  
To improve coupling reliability in flip chip bonding of a semiconductor device. By using, in the fabrication of a semiconductor device, a wiring substrate in which a wiring that crosses an opening...
8980745 Interconnect structures and methods of forming same  
A semiconductor device, an interconnect structure, and methods of forming the same are disclosed. An embodiment is a method of forming a semiconductor device, the method including forming a first...
8980650 Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layer  
Magnetic tunnel junctions (MTJ) suitable for spin transfer torque memory (STTM) devices, include perpendicular magnetic layers and one or more anisotropy enhancing layer(s) separated from a free...
8980691 Semiconductor device and method of forming low profile 3D fan-out package  
A semiconductor device includes a substrate having an insulating layer and a conductive layer embedded in the insulating layer. The conductive layer is patterned to form conductive pads or...
8975182 Method for manufacturing semiconductor device, and semiconductor device  
A method for manufacturing a semiconductor device is carried out by readying each of a semiconductor element, a substrate having Cu as a principal element at least on a surface, and a ZnAl solder...
8975739 Package structure and method for manufacturing thereof  
The invention provides an electronic device package and method for manufacturing thereof. The electronic device package includes a substrate, an electronic chip, a bonding pad, a first passivation...
8969198 Ohmic contact to semiconductor layer  
A perforating ohmic contact to a semiconductor layer in a semiconductor structure is provided. The perforating ohmic contact can include a set of perforating elements, which can include a set of...
8969199 Methods of forming a circuit that includes a cross-coupling gate contact structure wherein the circuit is to be manufactured using a triple patterning process  
One illustrative method disclosed herein includes, among other things, patterning a hard mask layer using three patterned photoresist etch masks, wherein a first feature corresponding to a...
8963325 Power device and power device module  
According to example embodiments of inventive concepts, a power device includes a semiconductor structure having a first surface facing a second surface, an upper electrode, and a lower electrode....
8963342 Structures, architectures, systems, methods, algorithms and software for configuring an integrated circuit for multiple packaging types  
Structures, architectures, systems, an integrated circuit, methods and software for configuring an integrated circuit for multiple packaging types and/or selecting one of a plurality of packaging...
8956950 Method of manufacturing semiconductor devices  
A method of manufacturing semiconductor devices includes forming a plurality of patterns spaced apart from each other on a semiconductor substrate, forming a filling layer, not removed in a...
8951845 Methods of fabricating a flip chip package for dram with two underfill materials  
A method of fabricating a microelectronic package can include mounting a microelectronic element to a substrate with a joining material. The mounting can include bonding a front surface of the...
8951914 Manufacturing method of device  
A device manufacturing method includes: sequentially forming a first sacrificial film, a first support film, a second sacrificial film, and a second support film on a semiconductor substrate;...
8946070 Four terminal transistor fabrication  
Producing a transistor includes providing a substrate including in order a first electrically conductive material layer positioned on the substrate and a first electrically insulating material...
8946902 Device and method for manufacturing a device  
A device includes a semiconductor chip including a frontside, a backside, and a side surface extending from the backside to the frontside. The side surface includes a first region and a second...
8937328 Light emitting device and manufacturing method thereof  
A light emitting device includes a light emitting element that emits light having a wavelength of 250 nm to 500 nm and a fluorescent layer that is disposed on the light emitting element. The...
8927425 Self-aligned patterning technique for semiconductor device features  
A method for fabricating a semiconductor device utilizing a plurality of masks and spacers. The method includes forming parallel first trenches in a substrate using a first lithographic process....
8927424 Self-aligned patterning technique for semiconductor device features  
A method for fabricating a semiconductor device utilizing a plurality of masks and spacers. The method includes forming parallel first trenches in a substrate using a first lithographic process....
8927410 Methods of forming through substrate interconnects  
A method of forming a through substrate interconnect includes forming a via into a semiconductor substrate. The via extends into semiconductive material of the substrate. A liquid dielectric is...
8916462 Method for manufacturing semiconductor device  
A method for manufacturing a MOSFET includes the steps of: preparing a substrate made of silicon carbide; forming a drain electrode making ohmic contact with the substrate; and forming a backside...
8916939 Reliable contacts  
A method for forming a device is disclosed. The method includes providing a substrate prepared with first and second contact regions and a dielectric layer over the contact region. First and...
8912060 Method for manufacturing semiconductor device and apparatus for manufacturing same  
A method for manufacturing a semiconductor device includes: forming a first layer on a substrate; forming a first contact hole in the first layer; burying a sacrificial film in the first contact...
8912094 Method for manufacturing stretchable thin film transistor  
Provided is a method for manufacturing a stretchable thin film transistor. The method for manufacturing a stretchable thin film transistor includes forming a mold substrate, forming a stretchable...
8901743 Fabrication of semiconductor device including chemical mechanical polishing  
A method of fabricating a semiconductor device includes forming a first insulation film over a semiconductor substrate, the semiconductor substrate including an outer region and an inner region...
8900993 Semiconductor device sealed in a resin section and method for manufacturing the same  
A semiconductor device includes a first semiconductor chip having a pad electrode formed on an upper surface thereof; a resin section sealing the first semiconductor chip with the upper surface...
8900996 Through silicon via structure and method of fabricating the same  
A method of fabricating a through silicon via (TSV) structure is provided, in which, a first dielectric layer is formed on the substrate, the first dielectric layer is patterned to have at least...
8895437 Method for forming staircase word lines in a 3D non-volatile memory having vertical bit lines  
A 3D nonvolatile memory has memory elements arranged in a three-dimensional pattern defined by rectangular coordinates having x, y and z-directions and with a plurality of parallel planes stacked...
8895436 Implementing enhanced power supply distribution and decoupling utilizing TSV exclusion zone  
Methods and structures implement enhanced power supply distribution and decoupling utilizing Through-Silicon-Via (TSV) exclusion zone areas for contacting one or more metal wiring layers on a...
8889527 Phase change memory and method therefor  
Briefly, in accordance with an embodiment of the invention, a phase change memory and a method to manufacture a phase change memory is provided. The phase change memory may include a memory...
8877636 Processing of nanostructured devices using microfabrication techniques  
Systems and methods that incorporate nanostructures into microdevices are discussed herein. These systems and methods can allow for standard microfabrication techniques to be extended to the field...
8865594 Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performance  
The invention provides a method of forming a film stack on a substrate, comprising performing a silicon containing gas soak process to form a silicon containing layer over the substrate, reacting...
8866116 Semiconductor memory devices having predetermined conductive metal levels and methods of fabricating the same  
A semiconductor memory device includes a lower wiring disposed on a first region of a substrate and a gate electrode disposed on a second region of the substrate. The lower wiring includes...
8865588 Method of manufacturing semiconductor device  
A method of manufacturing a semiconductor device includes forming a first interconnection and a second interconnection above a semiconductor substrate, forming a first sidewall insulating film on...
8859423 Nanostructured electrodes and active polymer layers  
Embodiments of methods for fabricating polymer nanostructures and nanostructured electrodes are disclosed. Material layers are deposited onto polymer nanostructures to form nanostructured...
8859414 Electronic assemblies including mechanically secured protruding bonding conductor joints  
A method for joining integrated circuit (IC) die. The includes pressing the IC die toward a workpiece so that a protruding bonding feature is inserted into a cavity of a receptacle through an...
8853076 Self-aligned contacts  
Self-aligned contacts in a metal gate structure and methods of manufacture are disclosed herein. The method includes forming a metal gate structure having a sidewall structure. The method further...
8846528 Method of modifying a low k dielectric layer having etched features and the resulting product  
A dielectric layer having features etched thereon and a low dielectric constant, and that is carried by a semiconductor substrate. The etched dielectric layer is modified so its surface energy is...
8846537 Method for forming fine pitch structures  
A mold having an open interior volume is used to define patterns. The mold has a ceiling, floor and sidewalls that define the interior volume and inhibit deposition. One end of the mold is open...
8841781 Chip having a driving integrated circuit  
A chip having a bump layout suitable for the chip on glass technology and a driving IC includes a plurality of first bumps and a plurality of second bumps for electrically connecting to a glass...
8835938 Nitride semiconductor light-emitting element and method of manufacturing the same  
There is provided a nitride semiconductor light-emitting element including a transparent conductor, a first conductivity-type nitride semiconductor layer, a light-emitting layer, and a second...
8822302 Methods of fabricating a storage node in a semiconductor device and methods of fabricating a capacitor using the same  
Methods of forming a storage node in a semiconductor device are provided. The method includes forming an interlayer insulation layer on a substrate, forming an etch stop layer and a first...