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8334199 Method for fabricating nitride-based semiconductor device having electrode on m-plane  
A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the...
8329578 Via structure and via etching process of forming the same  
A via etching process forms a through-substrate via having a round corner and a tapered sidewall profile. A method includes providing a semiconductor substrate; forming a hard mask layer and a...
8324058 Contacts for FET devices  
A method for contacting an FET device is disclosed. The method includes vertically recessing the device isolation, which exposes a sidewall surface on both the source and the drain. Next,...
8324732 Semiconductor component  
A semiconductor component, in particular in the form of a solar cell, comprises a two-dimensional semiconductor substrate with a first side, a second side which is arranged opposite thereto, a...
8318594 Method for fabricating nitride-based semiconductor device having electrode on m-plane  
A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the...
8319264 Semiconductor device and method for manufacturing the same  
A semiconductor device comprises: a semiconductor substrate including an active region defined as a device isolation film; a bit line contact hole obtained by etching the semiconductor substrate;...
8310055 Semiconductor devices having narrow conductive line patterns and related methods of forming such semiconductor devices  
Semiconductor devices and methods of forming semiconductor devices are provided in which a plurality of patterns are simultaneously formed to have different widths and the pattern densities of...
8309460 Methods of manufacturing semiconductor devices  
Provided are methods of manufacturing semiconductor devices by which two different kinds of contact holes with different sizes are formed using one photolithography process. The methods include...
8304268 Fabrication method of semiconductor package structure  
A fabrication method of a semiconductor package structure includes: patterning a metal plate having first and second surfaces; forming a dielectric layer on the metal plate; forming a metal layer...
8298946 Method of selective coating of a composite surface production of microelectronic interconnections using said method and integrated circuits  
The present invention relates to a process for selectively coating certain areas of a composite surface with a conductive film, to a process for fabricating interconnects in microelectronics, and...
8278206 Variable resistance memory device and methods of forming the same  
A method of forming a memory device includes forming a first interlayer insulating layer on a semiconductor substrate, forming a first electrode in the first interlayer insulating layer, the first...
8268723 Methods for forming semiconductor device structures  
The present invention relates to methods for forming through-wafer interconnects in semiconductor substrates and the resulting structures. In one embodiment, a method for forming a through-wafer...
8268715 Multi-component integrated circuit contacts  
An integrated circuit connection is describe that includes a first, securing member and a second, connection member. The first member, in an embodiment, is a spike that has a portion of its body...
8263438 Method for connecting a die assembly to a substrate in an integrated circuit  
A semiconductor device includes a substrate, a die assembly attachable to the substrate and a flexible strip extending over the substrate and the die assembly. The flexible strip has one or more...
8263490 Formation method of metallic electrode of semiconductor device and metallic electrode formation apparatus  
A formation method of a metallic electrode of a semiconductor device is disclosed. The method includes: acquiring data about surface shape of a surface part of a semiconductor substrate; and...
8264085 Semiconductor device package interconnections  
A semiconductor device. In one embodiment the device includes a carrier. A first material is deposited on the carrier. The first material has an elastic modulus of less than 100 MPa. A...
8258619 Integrated circuit die stacks with translationally compatible vias  
An integrated circuit die stack including a first integrated circuit die mounted upon a substrate, the first die including pass-through vias (‘PTVs’) composed of conductive pathways through the...
8258059 High voltage-resistant semiconductor device and method of manufacturing high voltage-resistant semiconductor device  
High voltage-resistant semiconductor devices adapted to control threshold voltage by utilizing threshold voltage variation caused by plasma damage resulting from the formation of multilayer...
8253253 Connecting and bonding adjacent layers with nanostructures  
An apparatus, comprising two conductive surfaces or layers and a nanostructure assembly bonded to the two conductive surfaces or layers to create electrical or thermal connections between the two...
8242583 Semiconductor device having CMP dummy pattern  
A semiconductor device including a CMP dummy pattern and a method for manufacturing the same are provided. The warpage of a wafer can be prevented by forming the CMP dummy pattern in the same...
8242034 Phase change memory devices and methods for fabricating the same  
Phase change memory devices and methods for manufacturing the same are provided. An exemplary embodiment of a phase change memory device includes a bottom electrode formed over a substrate. A...
8242006 Smooth electrode and method of fabricating same  
A smooth electrode is provided. The smooth electrode includes at least one metal layer having thickness greater than about 1 micron; wherein an average surface roughness of the smooth electrode is...
8237276 Bump structure and fabrication method thereof  
There is provided a bump structure for a semiconductor device, comprising a metal post formed on and electrically connected to an electrode pad on a substrate, a solder post formed on the top...
8237150 Nanowire devices for enhancing mobility through stress engineering  
A p-type semiconductor nanowire transistor is formed on the first semiconductor nanowire and an n-type semiconductor nanowire transistor is formed on the second semiconductor nanowire. The first...
8232190 Three dimensional vertical E-fuse structures and methods of manufacturing the same  
Three dimensional vertical e-fuse structures and methods of manufacturing the same are provided herein. The method of forming a fuse structure comprises providing a substrate including an...
8227323 Method for manufacturing semiconductor device  
A method for manufacturing a semiconductor device is disclosed in which, after semiconductor function regions and patterns of interlayer insulating films including required contact holes are...
8211789 Manufacturing method of a bump structure having a reinforcement member  
A manufacturing method of a bump structure having a reinforcement member is disclosed. First, a substrate including pads and a passivation layer is provided. The passivation layer has first...
8211797 Metal wiring layer and method of fabricating the same  
A metal wiring layer and a method of fabricating the metal wiring layer are provided. The method includes forming a dielectric layer on a substrate, forming a plurality of dielectric layer...
8211791 Method for fabricating circuitry component  
A chip structure comprises a substrate, a first built-up layer, a passivation layer and a second built-up layer. The substrate includes many electric devices placed on a surface of the substrate....
8212359 Semiconductor integrated circuit device, mounting structure of semiconductor integrated circuit device, and method for manufacturing semiconductor integrated circuit device  
A semiconductor integrated circuit device can be mounted on a circuit board through capacitive coupling even when being miniaturized. A passivation film disposed on a principal surface of a...
8206995 Method for manufacturing a resistive switching memory device and devices obtained thereof  
A method for manufacturing a resistive switching memory device comprises providing a substrate comprising an electrical contact, providing on the substrate a dielectric layer comprising a trench...
8198739 Semi-conductor chip with compressible contact structure and electronic package utilizing same  
A method of forming a compressible contact structure on a semi-conductor chip which comprises bonding a compressible polymer layer to the chip's surface, forming a plurality of openings within the...
8198680 Semiconductor element, semiconductor device and methods for manufacturing thereof  
The present invention provides a method of manufacturing a semiconductor element having a miniaturized structure and a semiconductor device in which the semiconductor element having a miniaturized...
8198140 Wiring substrate for mounting semiconductors, method of manufacturing the same, and semiconductor package  
A wiring substrate for mounting semiconductors is provided with an insulation film, wires formed in the insulation film, and a plurality of electrode pads that electrically connect to the wires...
8198157 Methods of forming non-volatile memory devices including dummy word lines  
A non-volatile memory device may include a semiconductor substrate including an active region at a surface thereof, a first memory cell string on the active region, and a second memory cell string...
8193091 Resin encapsulated semiconductor device and method for manufacturing the same  
The present invention includes a die pad; signal leads, ground connection leads connected to the die pad; a semiconductor chip including electrode pads for grounding; metal thin wires, and an...
8193546 Light-emitting-diode array with polymer between light emitting devices  
A light-emitting-diode (LED) array includes a first LED device having a first electrode and a second LED device having a second electrode. The first and the second LED device are formed on a...
8193015 Method of forming a light-emitting-diode array with polymer between light emitting devices  
A method for forming a light-emitting-diode (LED) array is disclosed includes forming an LED structure on a substrate. The LED structure is divided into at least a first LED device and a second...
8188607 Layout structure for chip coupling  
A layout structure disposed on the substrate of the liquid crystal display (LCD) for chip coupling is provided. The first and second orientations that are substantially perpendicular to the first...
8183090 Methods for manufacturing device mounting board and circuit substrate  
To reduce connection defects between a circuit substrate provided on a core substrate and a circuit to be mounted thereon, thereby improving reliability as a multilayered device mounting...
8183146 Manufacturing method for a buried circuit structure  
A manufacturing method for a buried circuit structure includes providing a substrate having at least a trench therein, forming a conductive layer having a top lower than an opening of the trench...
8178927 Integrated circuits having a contact structure having an elongate structure and methods for manufacturing the same  
In an embodiment, an integrated circuit is provided. The integrated circuit may include an active area extending along a first direction corresponding to a current flow direction through the...
8178972 Semiconductor device and manufacturing method therefor  
A semiconductor device is obtained, in which excellent characteristics are achieved, the reliability is improved, and an SiC wafer can also be used for the fabrication. A plurality of...
8173545 Method for the fabrication of a transistor gate using at least one electron beam  
A microelectronic method for the fabrication of a transistor gate using a precursor material that is suitable for being broken down into at least one metallic material after having been exposed to...
8169084 Bond pad structure and method for producing same  
It is described a bond pad structure and a method for producing the same, the bond pad structure (1), comprising: a substrate (3) having a surface (17) to be electrically contacted; a first...
8163645 Method for providing a redistribution metal layer in an integrated circuit  
A system and method is disclosed for providing a redistribution metal layer in an integrated circuit. The redistribution metal layer is formed from the last metal layer in the integrated circuit...
8159077 Pad in semicondcutor device and fabricating method thereof  
A pad in a semiconductor device and fabricating method thereof are disclosed. The pad includes an uppermost metal layer first to Nth intermediate metal layers, wherein capacitors configured or...
8148222 Cross-point diode arrays and methods of manufacturing cross-point diode arrays  
Methods of forming an array of memory cells and memory cells that have pillars. Individual pillars can have a semiconductor post formed of a bulk semiconductor material and a sacrificial cap on...
8138539 Semiconductor devices and methods of manufacture thereof  
Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a capacitor plate includes a plurality of first parallel conductive members, and a plurality of second...
8129791 Semiconductor device having a contact plug and manufacturing method thereof  
There is provided a semiconductor device that includes: a transistor having a gate electrode, a source region, and a drain region; a first inter-layer insulation film covering the transistor; a...